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    • 1. 发明授权
    • Suppression of leakage current in image acquisition
    • 图像采集中泄漏电流的抑制
    • US07265740B2
    • 2007-09-04
    • US10635509
    • 2003-08-07
    • Masahiro TadaTakashi NakamuraNorio TadaMasahiro Yoshida
    • Masahiro TadaTakashi NakamuraNorio TadaMasahiro Yoshida
    • G09G3/36
    • H01L27/14692G02F2001/13312H01L27/14609H01L27/14645H01L31/125
    • In a manufacturing process of a display device, hydrogenation in an I layer of photodiodes D1 and D2 is progressed less than that in a channel portion of a pixel TFT, and a defect density due to dangling bonds not terminated in the I layer of the photodiodes D1 and D2 is made higher than a defect density in the channel portion of the pixel TFT. Thus, while suppressing a leakage current of the pixel TFT, the sensitivity of the photodiodes D1 and D2 to light is improved. Moreover, a gate electrode is provided above an i region of a pin-type optical sensor diode with an insulating film interposed therebetween. Thus, a gate voltage can control a threshold of a bias voltage when a current starts to flow into the optical sensor diode and a leakage current is prevented from flowing into the optical sensor diode.
    • 在显示装置的制造过程中,I层光电二极管D 1和D 2中的氢化比像素TFT的沟道部分中的氢化进行得少,并且由于在I层的I层中没有终止的悬挂键的缺陷密度 使光电二极管D 1和D 2高于像素TFT的沟道部分中的缺陷密度。 因此,在抑制像素TFT的漏电流的同时,提高了光电二极管D 1,D 2对光的灵敏度。 此外,在pin型光传感器二极管的i区域的上方设置有栅电极,绝缘膜插入其间。 因此,当电流开始流入光学传感器二极管时,栅极电压可以控制偏置电压的阈值,并且防止泄漏电流流入光学传感器二极管。
    • 2. 发明申请
    • Display device and photoelectric conversion device
    • 显示装置和光电转换装置
    • US20050045881A1
    • 2005-03-03
    • US10924940
    • 2004-08-25
    • Takashi NakamuraNorio TadaMasahiro Tada
    • Takashi NakamuraNorio TadaMasahiro Tada
    • G02F1/136G02F1/133G02F1/1362H01L21/027H01L27/14H01L27/146H01L27/15H01L29/04H01L29/786H04N3/15
    • G02F1/1362G02F2001/13312H04N5/374
    • A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements includes first, second and third semiconductor regions disposed adjacently in sequence in parallel to a surface of a substrate; a first electrode connected to the first semiconductor region; and a second electrode connected to the third semiconductor region, the first semiconductor region being formed by injecting a first conductive impurity in first dose amount; the third semiconductor region being formed by injecting a second conductive impurity in second dose amount; and the second semiconductor region being formed by injecting the first conductive impurity in third dose amount less than the first dose amount.
    • 显示装置具有设置在像素内的显示元件,各显示元件形成在以矩阵形式排列的信号线和扫描线的交点附近; 和光电转换元件,其中每个光电转换元件包括平行于衬底的表面依次相邻设置的第一,第二和第三半导体区域; 连接到所述第一半导体区域的第一电极; 以及连接到所述第三半导体区域的第二电极,所述第一半导体区域通过以第一剂量注入第一导电杂质而形成; 通过以第二剂量注入第二导电杂质形成第三半导体区域; 并且所述第二半导体区域通过以小于所述第一剂量的第三剂量量注入所述第一导电杂质而形成。
    • 3. 发明授权
    • Display device and photoelectric conversion device
    • 显示装置和光电转换装置
    • US07164164B2
    • 2007-01-16
    • US10924940
    • 2004-08-25
    • Takashi NakamuraNorio TadaMasahiro Tada
    • Takashi NakamuraNorio TadaMasahiro Tada
    • H01L31/62
    • G02F1/1362G02F2001/13312H04N5/374
    • A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements includes first, second and third semiconductor regions disposed adjacently in sequence in parallel to a surface of a substrate; a first electrode connected to the first semiconductor region; and a second electrode connected to the third semiconductor region, the first semiconductor region being formed by injecting a first conductive impurity in first dose amount; the third semiconductor region being formed by injecting a second conductive impurity in second dose amount; and the second semiconductor region being formed by injecting the first conductive impurity in third dose amount less than the first dose amount.
    • 显示装置具有设置在像素内的显示元件,各显示元件形成在以矩阵形式排列的信号线和扫描线的交点附近; 和光电转换元件,其中每个光电转换元件包括平行于衬底的表面依次相邻设置的第一,第二和第三半导体区域; 连接到所述第一半导体区域的第一电极; 以及连接到所述第三半导体区域的第二电极,所述第一半导体区域通过以第一剂量注入第一导电杂质而形成; 通过以第二剂量注入第二导电杂质形成第三半导体区域; 并且所述第二半导体区域通过以小于所述第一剂量的第三剂量量注入所述第一导电杂质而形成。