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1. 发明申请

US20100047983A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100047983A1
公开(公告)日：2010-02-25
申请号：US12605875
申请日：2009-10-26
申请人： Takashi NAKABAYASHI , Hideyuki Arai , Mitsuo Nissa
发明人： Takashi NAKABAYASHI , Hideyuki Arai , Mitsuo Nissa
IPC分类号： H01L21/8234
CPC分类号： H01L21/823456 , H01L21/823412 , H01L21/823462 , H01L27/10894
摘要： A threshold control layer of a second MIS transistor is formed under the same conditions for forming a threshold control layer of a first MIS transistor. LLD regions of the second MIS transistor are formed under the same conditions for forming LDD regions of a third transistor.
摘要翻译：在用于形成第一MIS晶体管的阈值控制层的相同条件下形成第二MIS晶体管的阈值控制层。在与形成第三晶体管的LDD区域相同的条件下形成第二MIS晶体管的LLD区域。

2. 发明申请

US20100237432A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100237432A1
公开(公告)日：2010-09-23
申请号：US12793613
申请日：2010-06-03
申请人： Shinji TAKEOKA , Takashi NAKABAYASHI
发明人： Shinji TAKEOKA , Takashi NAKABAYASHI
IPC分类号： H01L27/092 , H01L21/762
CPC分类号： H01L21/823878 , H01L21/76237
摘要： A semiconductor device includes a MIS transistor formed in a FET formation region of a semiconductor substrate, a silicon dioxide film formed in a trench provided in the semiconductor substrate to define the FET formation region, a gate insulating film formed over the FET formation region and the silicon dioxide film, and a gate electrode formed on the gate insulating film. The portion of the gate insulating film formed between the portion of the gate electrode located in the trench and the side surface of the semiconductor substrate contains aluminum, while the portion of the gate insulating film formed between the gate electrode and the upper surface of the semiconductor substrate does not contain aluminum.
摘要翻译：半导体器件包括形成在半导体衬底的FET形成区域中的MIS晶体管，设置在半导体衬底中的沟槽中形成的限定FET形成区域的二氧化硅膜，形成在FET形成区域上的栅极绝缘膜和二氧化硅膜和形成在栅极绝缘膜上的栅电极。形成在位于沟槽中的栅电极的部分与半导体衬底的侧表面之间的栅极绝缘膜的部分含有铝，而在栅电极和半导体的上表面之间形成栅极绝缘膜的部分底物不含铝。

3. 发明申请

US20120219858A1 NEGATIVE ELECTRODE FOR NON-AQUEOUS SECONDARY BATTERY AND NON-AQUEOUS SECONDARY BATTERY 有权
标题翻译：非水性二次电池和非水性二次电池负极
公开(公告)号：US20120219858A1
公开(公告)日：2012-08-30
申请号：US13372637
申请日：2012-02-14
申请人： Takashi NAKABAYASHI , Shin TAKAHASHI
发明人： Takashi NAKABAYASHI , Shin TAKAHASHI
IPC分类号： H01M4/38 , H01M4/42
CPC分类号： H01M4/134 , H01M4/0471 , H01M4/0483 , H01M4/1395 , H01M4/386 , H01M4/387 , H01M4/622 , H01M10/0525 , H01M2004/021 , H01M2004/027 , Y02E60/122
摘要： The object of the present invention is to inhibit occurrence of structural collapse caused by volumetric change of primary particles of negative electrode active material and to improve adhesion between negative electrode active material and electrically conductive agent and between negative electrode mix layer and collector, whereby improvement of life is attained in negative electrode for non-aqueous secondary battery and non-aqueous secondary battery. In the negative electrode for non-aqueous secondary battery of the present invention, the negative electrode active material comprises silicon and/or tin, and at least one element selected from elements which do not react with lithium and has pores in both of the inner core portion and the outer peripheral portion of primary particles and a material which cures by a heat treatment is used as a binder.
摘要翻译：本发明的目的是抑制由负极活性物质的一次粒子的体积变化引起的结构崩溃的发生，提高负极活性物质与导电剂之间以及负极混合层与集电体之间的粘附性，从而提高在非水二次电池和非水二次电池的负极中达到寿命。在本发明的非水二次电池用负极中，所述负极活性物质包含硅和/或锡，以及选自不与锂反应的元素中的至少一种元素，并且在所述内核中具有孔一次粒子的外周部分和通过热处理固化的材料用作粘合剂。

4. 发明申请

US20100327363A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100327363A1
公开(公告)日：2010-12-30
申请号：US12874770
申请日：2010-09-02
申请人： Takashi NAKABAYASHI
发明人： Takashi NAKABAYASHI
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L29/66795 , H01L29/785
摘要： Sidewalls are formed on side surfaces of fin-shaped active regions, and then substrate regions surrounded by a device isolation groove are formed, where the widths of each substrate region in a channel length direction and in a channel width direction are respectively larger than those of the active region. Next, the sidewalls are removed, the device isolation groove and regions between the active regions are filled with an insulator film, and the insulator film is etched such that upper surfaces of the substrate regions are exposed. Next, an impurity is implanted in an upper portion of the substrate regions to form a punch through stopper diffusion layer, thereby forming fin transistors.
摘要翻译：在翅片状有源区域的侧面形成侧壁，然后形成由器件隔离槽包围的衬底区域，其中沟道长度方向和沟道宽度方向上的每个衬底区域的宽度分别大于活跃区域。接下来，去除侧壁，器件隔离沟槽和有源区域之间的区域被绝缘体膜填充，并且蚀刻绝缘膜，使得衬底区域的上表面被暴露。接下来，在衬底区域的上部注入杂质以形成穿通止动器扩散层的冲头，从而形成鳍式晶体管。

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