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    • 3. 发明授权
    • Photoelectric conversion apparatus and imaging system using the same
    • 光电转换装置及使用其的成像系统
    • US08553115B2
    • 2013-10-08
    • US12957537
    • 2010-12-01
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • H04N5/335
    • H01L27/14887H01L27/1463H04N5/359
    • If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.
    • 如果光电转换元件之间的分离彼此不同,则泄漏到相邻光电转换元件中的电荷变化。 本发明的光电转换装置包括可在第一和第二光电转换元件之间作为抵抗信号电荷的势垒的第一半导体区域。 此外,该装置包括第二半导体区域,其具有与第一半导体区域的深度相同的深度,并且宽度比第一半导体区域的宽度窄,并且可以是抵抗信号电荷的势垒,第一和第三 光电转换元件。 此外,该装置包括第三半导体区域,该第三半导体区域可以是抵抗第一半导体区域和第二半导体区域下的信号电荷的势垒。
    • 7. 发明申请
    • PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME
    • 光电转换装置和成像系统
    • US20110134270A1
    • 2011-06-09
    • US12957537
    • 2010-12-01
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • Yu ArishimaTakashi MatsudaToru Koizumi
    • H04N5/228H04N5/335
    • H01L27/14887H01L27/1463H04N5/359
    • If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region.
    • 如果光电转换元件之间的分离彼此不同,则泄漏到相邻光电转换元件中的电荷变化。 本发明的光电转换装置包括可在第一和第二光电转换元件之间作为抵抗信号电荷的势垒的第一半导体区域。 此外,该装置包括第二半导体区域,其具有与第一半导体区域的深度相同的深度,并且宽度比第一半导体区域的宽度窄,并且可以是抵抗信号电荷的势垒,第一和第三 光电转换元件。 此外,该装置包括第三半导体区域,该第三半导体区域可以是抵抗第一半导体区域和第二半导体区域下的信号电荷的势垒。
    • 9. 发明申请
    • PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME
    • 光电转换装置和成像系统
    • US20100225793A1
    • 2010-09-09
    • US12712393
    • 2010-02-25
    • TAKASHI MATSUDAToru Koizumi
    • TAKASHI MATSUDAToru Koizumi
    • H04N5/335
    • H01L27/14621H01L27/1463H01L27/14683H01L27/14806
    • A plurality of photoelectric conversion elements including a first photoelectric conversion element, a second photoelectric conversion element, and a third photoelectric conversion element, are arranged in a photoelectric conversion apparatus of the present invention. Provided, between the first photoelectric conversion element and the second photoelectric conversion element, is a first semiconductor region of a first conductivity type and of a first width in which a signal charge is a minor charier. And, provided, between the first photoelectric conversion element and the third photoelectric conversion element, is a second semiconductor region of the first conductivity type in a higher impurity concentration and of a second width narrower than the first width at a position deeper in a semiconductor substrate rather than a depth of the first semiconductor region.
    • 包括第一光电转换元件,第二光电转换元件和第三光电转换元件的多个光电转换元件被布置在本发明的光电转换设备中。 提供在第一光电转换元件和第二光电转换元件之间,是第一导电类型的第一半导体区域和信号电荷是次要栅极的第一宽度。 并且,在第一光电转换元件和第三光电转换元件之间,是在半导体衬底中较深的位置处的第一导电类型的第二半导体区域,其杂质浓度较高,第二宽度窄于第一宽度 而不是第一半导体区域的深度。