会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Measuring apparatus
    • 测量装置
    • US06885454B2
    • 2005-04-26
    • US10108258
    • 2002-03-28
    • Masayuki NayaNobufumi MoriToshihito KimuraHitoshi ShimizuShu Sato
    • Masayuki NayaNobufumi MoriToshihito KimuraHitoshi ShimizuShu Sato
    • G01N21/55G01N21/41G02B17/00G02B26/08H04J14/08
    • G01N21/553
    • A measuring apparatus is disclosed which includes a measuring unit equipped with a dielectric block and a thin film layer; an incidence system for making a light beam enter the dielectric block so that a condition for total internal reflection is satisfied at an interface between the dielectric block and the thin film layer; and a photodetector for receiving the light beam totally reflected at the interface. The measuring unit is measured a plurality of times, and a change in the state of attenuated total reflection during the plurality of measurements is detected. The sensor further includes a tilt measurement section for measuring the longitudinal tilt of the interface which changes the incidence angles during the plurality of measurements, and a calculating section for obtaining a measured value in which errors due to the longitudinal tilt have been corrected.
    • 公开了一种测量装置,其包括配备有介质块和薄膜层的测量单元; 用于使光束进入介质块的入射系统使得在介电块和薄膜层之间的界面处满足全内反射条件; 以及用于接收在界面处全反射的光束的光电检测器。 测量测量单元多次,并且检测在多个测量期间衰减的全反射状态的变化。 传感器还包括用于测量在多个测量期间改变入射角的界面的纵向倾斜的倾斜测量部分,以及用于获得校正了由于纵向倾斜引起的误差的测量值的计算部分。
    • 7. 发明授权
    • Measuring apparatus utilizing attenuated total reflection
    • 利用衰减全反射的测量装置
    • US06697158B2
    • 2004-02-24
    • US10113960
    • 2002-04-02
    • Nobuhiko OguraNobufumi MoriKatsumi HayashiToshihito Kimura
    • Nobuhiko OguraNobufumi MoriKatsumi HayashiToshihito Kimura
    • G01N2155
    • G01N21/553
    • Disclosed herein is a measuring apparatus utilizing attenuated total reflection. The measuring apparatus is equipped with a dielectric block, a thin film layer formed on one surface of the dielectric block, an optical system for making a light beam enter the dielectric block so that a condition for total internal reflection is satisfied at an interface between the dielectric block and the thin film layer, and a two-piece photodiode for detecting the light beam totally reflected at the interface. When attenuated total reflection is detected a plurality of times for a single sample, the two-piece photodiode is disposed at a predetermined position relative to a dark line when a first measurement is made. The two-piece photodiode is also disposed at the same position as the predetermined position stored in a storage unit when a second measurement and measurements thereafter are made.
    • 本文公开了一种利用衰减全反射的测量装置。 测量装置配备有介质块,形成在介质块的一个表面上的薄膜层,用于使光束进入介电块的光学系统,使得在内部反射的一个界面处满足完全内部反射的条件 介质块和薄膜层,以及用于检测在界面处全反射的光束的两片光电二极管。 当对单个样本检测多次衰减的全反射时,当进行第一测量时,两片光电二极管相对于暗线设置在预定位置。 当进行第二测量和其后的测量时,两件式光电二极管也被设置在与存储单元中存储的预定位置相同的位置。
    • 9. 发明授权
    • Analysis method and apparatus and analysis unit
    • 分析方法及装置与分析单位
    • US07495768B2
    • 2009-02-24
    • US11077159
    • 2005-03-11
    • Nobufumi MoriKatsumi Hayashi
    • Nobufumi MoriKatsumi Hayashi
    • G01N21/55
    • G01N21/7703G01N21/553
    • An analysis chip comprises a thin film layer, which is formed on a dielectric material block and has two different regions. A flow path unit comprising a supply path for supplying a sample onto the thin film layer and a discharging path for discharging the sample is releasably loaded into the analysis chip. A light beam is irradiated to a first interface between one region of the thin film layer and the dielectric material block, and a second interface between the other region of the thin film layer and the dielectric material block, in a parallel manner. Refractive index information with regard to a substance to be analyzed, which is located on the thin film layer, is acquired from intensities of the light beam totally reflected from the first interface and the light beam totally reflected from the second interface.
    • 分析芯片包括形成在电介质材料块上并具有两个不同区域的薄膜层。 包括用于将样品供应到薄膜层上的供应路径和用于排出样品的排出路径的流路单元可释放地装载到分析芯片中。 平行地将光束照射到薄膜层的一个区域和电介质材料块之间的第一界面,以及薄膜层的另一个区域和电介质材料块之间的第二界面。 从位于薄膜层上的待分析物质的折射率信息是从第一界面全反射的光束和从第二界面全反射的光束的强度获得的。