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1. 发明授权

US5289004A Scanning probe microscope having cantilever and detecting sample characteristics by means of reflected sample examination light 失效
标题翻译：具有悬臂的扫描探针显微镜，通过反射样品检测光检测样品特性
公开(公告)号：US5289004A
公开(公告)日：1994-02-22
申请号：US866748
申请日：1992-04-10
申请人： Takao Okada , Akira Yagi , Yasuhiro Sugawara , Seizo Morita , Tsugiko Takase
发明人： Takao Okada , Akira Yagi , Yasuhiro Sugawara , Seizo Morita , Tsugiko Takase
IPC分类号： G01Q10/00 , G01Q10/06 , G01Q20/02 , G01Q60/04 , G01Q60/12 , G01Q60/14 , G01Q60/38 , H01J37/00
CPC分类号： G01Q60/12 , B82Y35/00 , G01Q10/065 , G01Q20/02 , G01Q60/04 , G01Q60/14 , Y10S977/861 , Y10S977/863 , Y10S977/868
摘要： A scanning probe microscope comprises a cantilever having a conductive probe positioned near a sample, an actuator for moving the sample to and away from the probe, a circuit for applying a bias voltage between the probe and sample to produce a tunnel current therebetween, a circuit for detecting the produced tunnel current, a circuit for detecting the amount of displacement of the probe resultant from interatomic forces acting between atomics of the probe and sample, thereby producing signals, a circuit for providing the actuator for feedback in response to the output signals from the circuit to retain constant the distance between the probe and sample, thereby causing the actuator to move the sample, a circuit for forming an STS image data from the detected tunnel current, a circuit for forming an STM image data from the detected tunnel current, and a circuit for forming an AFM image data. Thus, the STS, STP and AFM images are separately obtained simultaneously.
摘要翻译：扫描探针显微镜包括具有位于样品附近的导电探针的悬臂，用于将样品移动到远离探针的致动器，用于在探针和样品之间施加偏置电压以在其间产生隧道电流的电路，电路用于检测产生的隧道电流的电路，用于检测由探针和样品的原子间作用的原子间力产生的探针的位移量，从而产生信号的电路，用于响应于来自保持探针和样品之间的距离恒定的电路，从而使致动器移动样本，从检测到的隧道电流形成STS图像数据的电路，用于从检测到的隧道电流形成STM图像数据的电路，以及用于形成AFM图像数据的电路。因此，STS，STP和AFM图像同时分别获得。

2. 发明授权

US6097197A Scanning probe microscope 失效
标题翻译：扫描探针显微镜
公开(公告)号：US6097197A
公开(公告)日：2000-08-01
申请号：US907191
申请日：1997-08-06
申请人： Katsuhiro Matsuyama , Nobuaki Sakai , Seizo Morita , Yasuhiro Sugawara
发明人： Katsuhiro Matsuyama , Nobuaki Sakai , Seizo Morita , Yasuhiro Sugawara
IPC分类号： G01B21/30 , G01N37/00 , G01Q30/04 , G01Q60/30 , G01Q90/00 , G01R31/302 , G01R31/02 , G01R31/305 , G03N23/00
CPC分类号： G01Q60/30 , B82Y35/00 , Y10S977/852
摘要： A conductive cantilever having a conductive probe on its free end is supported by a piezoelectric element, which oscillates upon reception of an AC voltage from a first AC voltage supply unit. An AC voltage is applied between a conductive sample and the probe by a variable DC voltage supply unit and a second AC voltage supply unit. An AM demodulator demodulates a signal from a displacement meter at an angular frequency of the first AC voltage supply unit. A lowpass filter extracts a DC component from an output signal from the AM demodulator, and a synchronism detector extracts a component concerning to the angular frequency twice as high as that of the second AC voltage supply unit from the AM demodulator output signal. A Z controller controls a position of a tube scanner based on an output signal from the subtracter which subtracts an output signal of the synchronism detector from an output signal of the lowpass filter. A data processing unit maps configuration data from the Z controller and surface potential data from a voltage control circuit, referring to XY data from an XY scanning circuit, such that a configuration image and a potential distribution image of the sample are obtained.
摘要翻译：在其自由端具有导电探针的导电悬臂由压电元件支撑，该压电元件在接收到来自第一AC电压供应单元的AC电压时振荡。通过可变直流电压供应单元和第二交流电压供应单元在导电样品和探针之间施加交流电压。 AM解调器以位于第一AC电压供应单元的角频率处的来自位移计的信号解调。低通滤波器从AM解调器的输出信号中提取DC分量，同步检测器从AM解调器输出信号中提取与第二AC电压供给单元的角频率相关的分量的两倍。 Z控制器基于来自减法器的输出信号控制管扫描器的位置，该输出信号从低通滤波器的输出信号中减去同步检测器的输出信号。参考XY扫描电路的XY数据，数据处理单元将来自Z控制器的配置数据和来自电压控制电路的表面电位数据进行映射，从而获得样品的配置图像和电位分布图像。

3. 发明申请

US20100260058A1 COMMUNICATION DEVICE 有权
标题翻译：通信设备
公开(公告)号：US20100260058A1
公开(公告)日：2010-10-14
申请号：US12746523
申请日：2008-10-20
申请人： Seiho Itano , Yasuhiro Sugawara
发明人： Seiho Itano , Yasuhiro Sugawara
IPC分类号： H04L12/26
CPC分类号： H04L12/44 , G06F1/3203 , H04L12/12 , Y02D50/40
摘要： A communication device capable of improving power saving is provided. A communication device (1) includes a communication port (10); communication monitoring sections (18, 22) for controlling information communication using the communication port, a status indicating section (12) having one or more status indicators, a status indicator driving section (20) for controlling a drive signal which detects a communication status from the communication monitoring sections and is supplied to the status indicating section on the basis of the communication status, and a lighting control section (24) for detecting the communication status from the communication monitoring sections and outputting a control signal to the status indicator driving section if the communication status changes from a first status to a second status. The status indicator driving section controls the drive signal so as to turn off the status indicators when the control signal is outputted from the lighting control section.
摘要翻译：提供了能够提高节电的通信装置。通信设备（1）包括通信端口（10）; 用于控制使用通信端口的信息通信的通信监视部分（18,22），具有一个或多个状态指示器的状态指示部分（12），用于控制检测通信状态的驱动信号的状态指示器驱动部分（20）通信监视部分，并且基于通信状态提供给状态指示部分;以及照明控制部分（24），用于从通信监视部分检测通信状态，并将控制信号输出到状态指示器驱动部分，如果通信状态从第一状态变为第二状态。当控制信号从照明控制部分输出时，状态指示器驱动部分控制驱动信号以便关闭状态指示。

4. 发明授权

US06713343B2 Method of forming a semiconductor device with a capacitor including a polycrystalline tantalum oxide film dielectric 失效
标题翻译：用包括多晶氧化钽膜电介质的电容器形成半导体器件的方法
公开(公告)号：US06713343B2
公开(公告)日：2004-03-30
申请号：US10388618
申请日：2003-03-17
申请人： Yasuhiro Sugawara , Shinpei Iijima , Yuzuru Oji , Naruhiko Nakanishi , Misuzu Kanai , Masahiko Hiratani
发明人： Yasuhiro Sugawara , Shinpei Iijima , Yuzuru Oji , Naruhiko Nakanishi , Misuzu Kanai , Masahiko Hiratani
IPC分类号： H01L218242
CPC分类号： H01L27/1085 , H01L21/02183 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/02356 , H01L21/31604 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L27/10876 , H01L27/10891 , H01L27/10894 , H01L28/40
摘要： An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate 1 and having a lower electrode 54, a capacity insulating film 58 and an upper electrode 59. The lower electrode 54 is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film 58 is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.
摘要翻译：集成半导体器件具有改进的可靠性并且适于更高的集成度，而不减少每个信息存储电容元件的累积电荷。半导体器件具有DRAM，其具有存储单元，每个DRAM包括与形成在半导体衬底1的主表面上的存储单元选择MISFET Qs串联连接的信息存储电容元件C，具有下电极54，电容绝缘膜58和上电极59.下电极54由在特定平面轴承（例如（002））面取向的钌膜制成，并且电容绝缘膜58由通过热处理得到的多晶钽膜制成含有沉淀状态的结晶用氧化钽晶体的无定形氧化钽膜。

5. 发明授权

US5296729A Semiconductor memory device having static random access memory 失效
标题翻译：具有静态随机存取存储器的半导体存储器件
公开(公告)号：US5296729A
公开(公告)日：1994-03-22
申请号：US782623
申请日：1991-10-25
申请人： Toshiaki Yamanaka , Norio Hasegawa , Toshihiko Tanaka , Takashi Hashimoto , Koichiro Ishibashi , Naotaka Hashimoto , Akihiro Shimizu , Yasuhiro Sugawara , Tokuo Kure , Shimpei Iijima , Takashi Nishida , Eiji Takeda
发明人： Toshiaki Yamanaka , Norio Hasegawa , Toshihiko Tanaka , Takashi Hashimoto , Koichiro Ishibashi , Naotaka Hashimoto , Akihiro Shimizu , Yasuhiro Sugawara , Tokuo Kure , Shimpei Iijima , Takashi Nishida , Eiji Takeda
IPC分类号： G03F1/29 , G03F1/30 , G03F1/68 , H01L21/027 , H01L21/8244 , H01L27/11 , H01L27/02 , H01L29/00 , H01L29/78
CPC分类号： H01L27/1108 , Y10S257/903
摘要： There is provided a technique capable of reducing the electrode resistance by widening the effective area of an electrode in a cell for a standard potential supply connected to the memory cell. There is also provided a technique capable of reducing the memory cell area by reducing the area necessary for separation between the electrode in a cell for the standard potential supply and adjacent other electrodes. Two transfer MOS transistors of a first conductivity type and two driver MOS transistors are provided. A conductive layer for fixing the source potential of the driver MOS transistors to standard potential is so disposed above the transfer and driver MOS transistors as to the wholly cover the memory cell. Separation is carried out by using a photo-mask having an optically transparent substrate provided within the same transmissive portion with a pattern of a plurality of so-called phase shifter regions for inversion of the phase of transmitting light.
摘要翻译：提供了一种能够通过扩大连接到存储单元的标准电位电源的单元中的电极的有效面积来减小电极电阻的技术。还提供了一种能够通过减小用于标准电位电极的电极中的电极与相邻的其它电极之间分离所需的面积来减小存储单元面积的技术。提供了第一导电类型的两个传输MOS晶体管和两个驱动器MOS晶体管。用于将驱动器MOS晶体管的源极电位固定为标准电位的导电层设置在传输和驱动器MOS晶体管之上，以完全覆盖存储器单元。通过使用具有设置在相同透射部分内的光学透明基板的光掩模进行分离，其具有多个所谓的移相器区域的图案，用于反转透射相位的相位。

6. 发明授权

US08351346B2 Communication device 有权
标题翻译：通讯设备
公开(公告)号：US08351346B2
公开(公告)日：2013-01-08
申请号：US12746523
申请日：2008-10-20
申请人： Seiho Itano , Yasuhiro Sugawara
发明人： Seiho Itano , Yasuhiro Sugawara
IPC分类号： H04L12/26
CPC分类号： H04L12/44 , G06F1/3203 , H04L12/12 , Y02D50/40
摘要： A communication device capable of improving power saving is provided. A communication device (1) includes a communication port (10); communication monitoring sections (18, 22) for controlling information communication using the communication port, a status indicating section (12) having one or more status indicators, a status indicator driving section (20) for controlling a drive signal which detects a communication status from the communication monitoring sections and is supplied to the status indicating section on the basis of the communication status, and a lighting control section (24) for detecting the communication status from the communication monitoring sections and outputting a control signal to the status indicator driving section if the communication status changes from a first status to a second status. The status indicator driving section controls the drive signal so as to turn off the status indicators when the control signal is outputted from the lighting control section.
摘要翻译：提供了能够提高节电的通信装置。通信装置（1）包括通信端口（10）; 用于控制使用通信端口的信息通信的通信监视部分（18,22），具有一个或多个状态指示器的状态指示部分（12），用于控制检测通信状态的驱动信号的状态指示器驱动部分（20）通信监视部分，并且基于通信状态提供给状态指示部分;以及照明控制部分（24），用于从通信监视部分检测通信状态，并将控制信号输出到状态指示器驱动部分，如果通信状态从第一状态变为第二状态。当控制信号从照明控制部分输出时，状态指示器驱动部分控制驱动信号以便关闭状态指示。

7. 发明授权

US06583463B1 Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator 失效
标题翻译：具有信息存储电容器的半导体集成电路器件具有二氧化钌下电极和结晶化的TA2O5电容绝缘体
公开(公告)号：US06583463B1
公开(公告)日：2003-06-24
申请号：US09172196
申请日：1998-10-14
申请人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
发明人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
IPC分类号： H01L27108
CPC分类号： H01L21/31604 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L27/10814 , H01L27/10852 , H01L27/10882 , H01L27/10894 , H01L28/56 , H01L28/60 , H01L28/65
摘要： A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.
摘要翻译：一种半导体集成电路器件，包括存储单元，该存储单元包括形成在半导体衬底1的主表面上的存储单元选择MISFET Qs和与所述存储单元选择MISFET Qs串联连接的信息存储电容器C，电极54，电容器绝缘体58和上电极59，其中下电极54由含有二氧化钌（RuO 2）作为主要成分的导电材料制成，并且电容器绝缘体58由结晶的五氧化二钽制成。因此，可以确保256Mbits DRAM的存储单元或后一代的DRAM的存储单元所需的电容。

8. 发明授权

US5655067A Animation generating method in a design supporting system 失效
标题翻译：设计支持系统中的动画生成方法
公开(公告)号：US5655067A
公开(公告)日：1997-08-05
申请号：US284005
申请日：1994-08-01
申请人： Hisashi Takahashi , Katsuhiko Yuura , Shoichi Kubo , Yasuhiro Sugawara
发明人： Hisashi Takahashi , Katsuhiko Yuura , Shoichi Kubo , Yasuhiro Sugawara
IPC分类号： G06F9/06 , G06F9/44 , G06T13/00 , G06T13/80 , G06T5/50
CPC分类号： G06T13/00
摘要： In an animation generating method wherein a component of an apparatus to be designed is defined by an instance of an object-oriented program and a figure is allocated to said instance on a computer, and further an animation method for varying a representation of said figure in connection with the operation of the instance is interactively generated, a designation is made of either a slot of said instance, or a method argument of a method effected to said instance, and further a designation is made of a figure attribute of a figure to be changed in an animation representation. In response to this, an animation method for changing the figure attribute is automatically generated with refererence to the slot of the instance, or the method argument of the method effected to the instance.
摘要翻译：一种动画生成方法，其特征在于，将被设计的装置的组件由面向对象的程序的实例来定义，并且将图形分配给计算机上的所述实例，并且还提供了一种用于将所述图形的表示改变为与实例的操作的连接被交互地生成，指定所述实例的时隙或对所述实例的方法的方法参数，并且进一步指定图形的图形属性改变了动画表示。响应于此，用于改变图形属性的动画方法是自动生成的，而不考虑实例的时隙，或该方法的方法参数对实例有效。

9. 发明授权

US06627497B2 Semiconductor integrated circuit device and method of manufacturing the same 失效
公开(公告)号：US06627497B2
公开(公告)日：2003-09-30
申请号：US10162192
申请日：2002-06-05
申请人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
发明人： Naruhiko Nakanishi , Nobuyoshi Kobayashi , Yuzuru Ohji , Sinpei Iijima , Yasuhiro Sugawara , Misuzu Kanai
IPC分类号： H01L218242
CPC分类号： H01L21/31604 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L27/10814 , H01L27/10852 , H01L27/10882 , H01L27/10894 , H01L28/56 , H01L28/60 , H01L28/65
摘要： A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate 1 and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode 54, a capacitor insulator 58 and an upper electrode 59, wherein the lower electrode 54 is made of a conductive material containing ruthenium dioxide (RuO2) as principle ingredient and the capacitor insulator 58 is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

10. 发明授权

US06544834B1 Method of forming a semiconductor device including a capacitor with tantalum oxide (Ta2O5) 失效
标题翻译：形成包括具有氧化钽（Ta 2 O 5）的电容器的半导体器件的方法
公开(公告)号：US06544834B1
公开(公告)日：2003-04-08
申请号：US09720002
申请日：2000-12-19
申请人： Yasuhiro Sugawara , Shinpei Iijima , Yuzuru Oji , Naruhiko Nakanishi , Misuzu Kanai , Masahiko Hiratani
发明人： Yasuhiro Sugawara , Shinpei Iijima , Yuzuru Oji , Naruhiko Nakanishi , Misuzu Kanai , Masahiko Hiratani
IPC分类号： H01L218242
CPC分类号： H01L27/1085 , H01L21/02183 , H01L21/02271 , H01L21/02304 , H01L21/02337 , H01L21/02356 , H01L21/31604 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L27/10876 , H01L27/10891 , H01L27/10894 , H01L28/40
摘要： An integrated semiconductor device has an improved reliability and is adapted to a higher degree of integration without reducing the accumulated electric charge of each information storage capacity element. The semiconductor device is provided with a DRAM having memory cells, each comprising an information storage capacity element C connected in series to a memory cell selection MISFET Qs formed on a main surface of a semiconductor substrate 1 and having a lower electrode 54, a capacity insulating film 58 and an upper electrode 59. The lower electrode 54 is made of ruthenium film oriented in a particular plane bearing, e.g., a (002) plane, and the capacity insulating film 58 is made of a polycrystalline tantalum film obtained by thermally treating an amorphous tantalum oxide film containing crystal of tantalum oxide in an as-deposited state for crystallization.
摘要翻译：集成半导体器件具有改进的可靠性并且适于更高的集成度，而不减少每个信息存储电容元件的累积电荷。半导体器件具有DRAM，其具有存储单元，每个DRAM包括与形成在半导体衬底1的主表面上的存储单元选择MISFET Qs串联连接的信息存储电容元件C，具有下电极54，电容绝缘膜58和上电极59.下电极54由在特定平面轴承（例如（002））面取向的钌膜制成，并且电容绝缘膜58由通过热处理得到的多晶钽膜制成含有沉淀状态的结晶用氧化钽晶体的无定形氧化钽膜。

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