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1. 发明申请

US20050049816A1 System and method for assisting shoe selection 有权
标题翻译：用于辅助选鞋的系统和方法
公开(公告)号：US20050049816A1
公开(公告)日：2005-03-03
申请号：US10871505
申请日：2004-06-18
申请人： Takao Oda , Natsuki Sato , Isao Nakano , Yasunori Kaneko , Tomohiro Ota
发明人： Takao Oda , Natsuki Sato , Isao Nakano , Yasunori Kaneko , Tomohiro Ota
IPC分类号： A43D1/02 , A61B5/107 , A61B5/117 , G01B11/24 , G06F15/00 , G01D1/00
CPC分类号： A43D1/025
摘要： A system for assisting shoe selection can select and present a shoe type that fits a customer by estimating the anatomical characteristics of a foot from the state of the foot. The system includes the following: a measured data input portion for measuring and inputting data that show the state of a foot of a person to be measured; a normalization processing portion for normalizing the data input from the measured data input portion and storing the normalized data at least temporarily; a shoe catalog database for storing information of a plurality of types of shoes; and a selection portion for estimating the anatomical characteristics of the foot of the person based on the normalized data, referring to the shoe catalog database based on the anatomical characteristics, and selecting and presenting a shoe type that fits the person.
摘要翻译：用于辅助鞋选择的系统可以通过从脚的状态估计脚的解剖特征来选择和呈现适合于顾客的鞋类型。该系统包括：测量数据输入部分，用于测量和输入显示被测量人的脚的状态的数据; 归一化处理部分，用于对从测量数据输入部分输入的数据进行归一化并至少暂时存储归一化数据; 用于存储多种类型的鞋的信息的鞋目录数据库; 以及选择部分，用于基于归一化数据，基于解剖特征参考鞋目录数据库，以及选择和呈现适合人的鞋类型，来估计人的脚的解剖特征。

2. 发明授权

US07089152B2 System and method for assisting shoe selection 有权
标题翻译：用于辅助选鞋的系统和方法
公开(公告)号：US07089152B2
公开(公告)日：2006-08-08
申请号：US10871505
申请日：2004-06-18
申请人： Takao Oda , Natsuki Sato , Isao Nakano , Yasunori Kaneko , Tomohiro Ota
发明人： Takao Oda , Natsuki Sato , Isao Nakano , Yasunori Kaneko , Tomohiro Ota
IPC分类号： G06F19/00 , A61B5/103
CPC分类号： A43D1/025
摘要： A system for assisting shoe selection can select and present a shoe type that fits a customer by estimating the anatomical characteristics of a foot from the state of the foot. The system includes the following: a measured data input portion for measuring and inputting data that show the state of a foot of a person to be measured; a normalization processing portion for normalizing the data input from the measured data input portion and storing the normalized data at least temporarily; a shoe catalog database for storing information of a plurality of types of shoes; and a selection portion for estimating the anatomical characteristics of the foot of the person based on the normalized data, referring to the shoe catalog database based on the anatomical characteristics, and selecting and presenting a shoe type that fits the person.
摘要翻译：用于辅助鞋选择的系统可以通过从脚的状态估计脚的解剖特征来选择和呈现适合于顾客的鞋类型。该系统包括：测量数据输入部分，用于测量和输入显示被测量人的脚的状态的数据; 归一化处理部分，用于对从测量数据输入部分输入的数据进行归一化并至少暂时存储归一化数据; 用于存储多种类型的鞋的信息的鞋目录数据库; 以及选择部分，用于基于归一化数据，基于解剖特征参考鞋目录数据库，以及选择和呈现适合人的鞋类型，来估计人的脚的解剖特征。

3. 发明申请

US20050000115A1 Sole structure for a shoe 审中-公开
标题翻译：鞋底结构
公开(公告)号：US20050000115A1
公开(公告)日：2005-01-06
申请号：US10861235
申请日：2004-06-03
申请人： Takaya Kimura , Yasunori Kaneko , Takeshi Takeshita , Kazuhiko Suzuki , Kenji Araki , Natsuki Sato , Takao Oda , Kenjiro Kita
发明人： Takaya Kimura , Yasunori Kaneko , Takeshi Takeshita , Kazuhiko Suzuki , Kenji Araki , Natsuki Sato , Takao Oda , Kenjiro Kita
IPC分类号： A43B13/12 , A43B13/14 , A43B13/16 , A43B13/18 , A43B13/00 , A43B7/24 , A43B13/38
CPC分类号： A43B13/026 , A43B7/141 , A43B7/142 , A43B7/1425 , A43B7/1435 , A43B7/1445 , A43B13/12 , A43B13/141 , A43B13/16 , A43B13/181
摘要： A hard elastic body (10) having a longitudinally extending cavity (13) formed therein is provided mainly at a forefoot region (F) of a sole body. The cavity (13) is formed of a first curved surface (11) extending curvedly in a longitudinal direction and a second curved surface (12) disposed under the first curved surface (11) and extending curvedly in a longitudinal direction as well. A front and rear end of the second curved surface (12) is connected to a front and rear end of the first curved surface (11) respectively and an intermediate portion of the second curved surface (12) is spaced apart downwardly from an intermediate portion of the first curved surface (11). A path (PQ1) between the front and rear end of the first curved surface (11) is substantially equal to a path (PQ2) between the front and rear end of the second curved surface (12). When the first curved surface (11) is pressed downwardly, the sole body is deformed in such a way that a rear foot region (R) of the sole body is lifted upwardly.
摘要翻译：在其中形成有纵向延伸的空腔（13）的硬弹性体（10）主要设置在鞋底本体的前脚区域（F）处。空腔（13）由沿纵向方向弯曲延伸的第一弯曲表面（11）和设置在第一曲面（11）下方并沿纵向方向弯曲延伸的第二曲面（12）形成。第二曲面（12）的前后端分别与第一曲面（11）的前后端连接，第二曲面（12）的中间部分与中间部分的第一曲面（11）。第一弯曲表面（11）的前端和后端之间的路径（PQ1）基本上等于第二弯曲表面（12）的前端和后端之间的路径（PQ2）。当第一弯曲表面（11）被向下按压时，鞋底体变形，使得鞋底体的后脚区域（R）向上提升。

4. 发明申请

US20130084651A1 TEST INSTRUMENT FOR MEASURING ANALYTE IN SAMPLE, AND METHOD FOR MEASURING ANALYTE USING SAME 审中-公开
标题翻译：用于测量样品中分析物的测试仪器和使用其测量分析仪的方法
公开(公告)号：US20130084651A1
公开(公告)日：2013-04-04
申请号：US13639582
申请日：2011-04-04
申请人： Ryo Kojima , Kenta Noda , Yoshiro Sato , Natsuki Sato , Kaduho Ashizawa
发明人： Ryo Kojima , Kenta Noda , Yoshiro Sato , Natsuki Sato , Kaduho Ashizawa
IPC分类号： G01N33/53
摘要： Disclosed is a test instrument for measuring an analyte in a liquid sample by a noble metal colloid aggregation measurement method. The test instrument involves a reaction chamber in which at least the liquid sample is to be reacted with a reagent, wherein the reagent is adhered on at least a part of a surface constituting the reaction chamber in a dried state, and the reagent enables the measurement of the analyte by a noble metal colloid aggregation measurement method. The test instrument additionally involves a supply section for supplying the liquid sample and a flow path for delivering the liquid sample that has been supplied to the supply section to the reaction chamber, wherein the liquid sample that has been supplied to the supply section is delivered to the reaction chamber through the flow path to cause the liquid sample to be brought into contact with the reagent that has been adhered in a dried state, thereby producing a difference in pressure between the supply section and the reaction chamber for the purpose of dispersing the reagent in the liquid sample. When the test instrument is used, the measurement based on an absorbance at a visible region can be achieved, the analyte can be measured accurately within a short time, and the measurement suitable for a POCT field can be achieved.
摘要翻译：公开了一种用于通过贵金属胶体聚集测量方法测量液体样品中的分析物的测试仪器。测试仪器包括反应室，其中至少液体样品将与试剂反应，其中试剂在干燥状态下粘附在构成反应室的表面的至少一部分上，并且该试剂能够进行测量的分析物通过贵金属胶体聚集测量方法。测试仪器还包括用于供应液体样品的供应部分和用于将已经供应到供应部分的液体样品输送到反应室的流路，其中已经供应到供应部分的液体样品被递送到反应室通过流路使液体样品与干燥状态下已经粘附的试剂接触，从而产生供给部和反应室之间的压力差，以分散试剂在液体样品中。当使用测试仪器时，可以实现基于可见光区域的吸光度的测量，可以在短时间内精确测量分析物，并且可以实现适合于POCT场的测量。

5. 发明授权

US08296972B2 Shoe and method of manufacturing the same 有权
标题翻译：鞋和制造方法相同
公开(公告)号：US08296972B2
公开(公告)日：2012-10-30
申请号：US12414141
申请日：2009-03-30
申请人： Natsuki Sato , Tetsuo Yamamoto , Yoshinobu Watanabe , Satoshi Kishimoto
发明人： Natsuki Sato , Tetsuo Yamamoto , Yoshinobu Watanabe , Satoshi Kishimoto
IPC分类号： A43B23/00
CPC分类号： A43B23/047 , A43B1/04 , A43B9/12
摘要： A shoe 1 of the present invention includes an upper 2 made of a stretchable fabric. The stretchable fabric is integrated with a sole 3 in a state of being stretched. Further, a method of manufacturing the shoe 1 of the present invention is a method of manufacturing a shoe using a stretchable fabric for the upper 2. The method includes steps of: producing an upper pattern using a last having a size smaller than that of the sole 3 as a base; producing the upper 2 with the stretchable fabric being stretched by stretching the upper pattern and fitting the upper pattern onto a last having a size that matches the sole 3; and integrating the upper 2 with the stretchable fabric being stretched with the sole 3.
摘要翻译：本发明的鞋1包括由可伸缩织物制成的鞋面2。伸缩性织物与被拉伸状态的鞋底3一体化。此外，制造本发明的鞋1的方法是使用上部2的伸缩性织物制造鞋子的方法。该方法包括以下步骤：使用具有小于鞋底3为基地; 通过拉伸上部图案并将上部图案装配到具有与鞋底3相匹配的尺寸的最后部分上，使可伸展织物拉伸; 并且将上部2与被鞋底3拉伸的可伸展织物整合。

6. 发明授权

US08129709B2 Nonvolatile memory device 有权
标题翻译：非易失性存储器件
公开(公告)号：US08129709B2
公开(公告)日：2012-03-06
申请号：US12618302
申请日：2009-11-13
申请人： Akiyoshi Seko , Yukio Fuji , Natsuki Sato , Isamu Asano
发明人： Akiyoshi Seko , Yukio Fuji , Natsuki Sato , Isamu Asano
IPC分类号： H01L45/00
CPC分类号： H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/148 , H01L45/1666
摘要： A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select active elements (23) formed in the active regions (3) and having a first impurity diffusion region and a second impurity diffusion region, a plurality of first electrodes (13) electrically connected to the first impurity diffusion region, a variable resistance layer (12) electrically connected to the first electrodes (13), and a plurality of second electrodes electrically connected to the variable resistance layer (12). Among the plurality of first electrodes (13) and the plurality of second electrodes, an array direction of at least one pair of the first electrodes (13) and the second electrodes that are electrically connected to the same variable resistance layer (12), and a direction of extension of the activation regions (3) are not parallel.
摘要翻译：非易失性存储器件（21）设置有半导体衬底，形成在半导体衬底上并在带中延伸的多个有源区（3），形成在有源区（3）中的多个选择有源元件（23）并具有第一杂质扩散区域和第二杂质扩散区域，与第一杂质扩散区域电连接的多个第一电极（13），与第一电极（13）电连接的可变电阻层（12），以及电连接到可变电阻层（12）的多个第二电极。在多个第一电极（13）和多个第二电极中，电连接到同一可变电阻层（12）的至少一对第一电极（13）和第二电极的排列方向，以及激活区域（3）的延伸方向不平行。

7. 发明授权

US07829878B2 Semiconductor device and manufacture method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07829878B2
公开(公告)日：2010-11-09
申请号：US11845120
申请日：2007-08-27
申请人： Natsuki Sato
发明人： Natsuki Sato
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , H01L27/2436 , H01L45/04 , H01L45/143 , H01L45/148 , H01L45/16
摘要： A semiconductor device includes an interlayer insulating film formed on a semiconductor substrate to cover a lower electrode, a side-wall insulating film formed on a side wall of a contact hole formed through the interlayer insulating film to a depth reaching the lower electrode, a heater formed in the interior of the contact hole defined by the side-wall insulating film, and a phase-change film in contact with the top surface of the heater. The heater is in contact with the lower electrode at the bottom surface within the contact hole, and the top surface thereof is located at a lower level than that of the top surface of the side-wall insulating film. The top surface of the heater is located at a lower level than the top surface of the side-wall insulating film by an extent equal to or greater than a thickness of the phase-change film.
摘要翻译：半导体器件包括形成在半导体衬底上以覆盖下电极的层间绝缘膜，形成在通过层间绝缘膜形成的接触孔的侧壁上的侧壁绝缘膜，到达下电极的深度，加热器形成在由侧壁绝缘膜限定的接触孔的内部，以及与加热器的顶表面接触的相变膜。加热器与接触孔底面的下电极接触，其顶面位于比侧壁绝缘膜的上表面低的位置。加热器的上表面位于与侧壁绝缘膜的顶表面相比等于或大于相变膜厚度的程度的较低水平处。

8. 发明申请

US20100078616A1 NONVOLATILE MEMORY DEVICE AND MANUFACTURING PROCESS THEREOF 审中-公开
标题翻译：非易失性存储器件及其制造工艺
公开(公告)号：US20100078616A1
公开(公告)日：2010-04-01
申请号：US12569489
申请日：2009-09-29
申请人： Akiyoshi Seko , Natsuki Sato , Isamu Asano
发明人： Akiyoshi Seko , Natsuki Sato , Isamu Asano
IPC分类号： H01L47/00 , H01L21/20
CPC分类号： H01L45/04 , H01L45/145
摘要： A nonvolatile memory device has a first insulating layer, a variable resistance layer provided on the first insulating layer and having a variable resistance material, and a first electrode and second electrode electrically connected with the variable resistance layer. The variable resistance layer has a variable resistance region as a data storing region and a thickness-changing region continuously extending from the variable resistance region and gradually becoming thicker from the variable resistance region.
摘要翻译：非易失性存储器件具有第一绝缘层，设置在第一绝缘层上并具有可变电阻材料的可变电阻层，以及与可变电阻层电连接的第一电极和第二电极。可变电阻层具有作为数据存储区域的可变电阻区域和从可变电阻区域连续延伸并从可变电阻区域逐渐变厚的厚度变化区域。

9. 发明申请

US20080120871A1 Upper structure for a shoe 失效
标题翻译：鞋的上部结构
公开(公告)号：US20080120871A1
公开(公告)日：2008-05-29
申请号：US11982218
申请日：2007-10-31
申请人： Natsuki Sato , Tetsuo Yamamoto
发明人： Natsuki Sato , Tetsuo Yamamoto
IPC分类号： A43B7/14 , A43B5/00 , A43B21/00 , A43B23/00 , A43B23/08
CPC分类号： A43B13/181 , A43B23/0235 , A43B23/0275 , A43B23/047 , A43C1/00
摘要： An upper structure for a shoe that improves a fit of the heel portion during heel contact with the ground to the push off motion of a foot. The upper structure includes an upper body 30, and an outside upper member 31 that overlaps the lateral side of the upper body 30 to cover the talus T of the foot and whose bottom side edge portion 31a is fixedly attached to the bottom surface of the upper body 30. The rear end portion A of the bottom side edge portion 31a of the outside upper member 31 is located at the rear of the load centerline C of the calcaneus and the rear side edge portion 31c of the outside upper member 31 is provided separately from the upper body 30 at the rear of the talus T of the foot. The instep side edge portion 31b of the outside upper member 31 is connected to the shoelace 4. On the lateral side of the heel portion of the upper body 30 is provided a region 10 that is expandable and contractible in the longitudinal direction. The top end of the region 10 extends to the opening of the upper body 30 and the bottom end B of the region 10 is disposed in front of the load centerline C of the calcaneus and below the height h that corresponds to 55% of the lateral ankle height H of the foot.
摘要翻译：一种用于鞋的上部结构，其改善了跟脚部接触地面期间脚后跟部分与脚的推开运动的配合。上部结构包括上部主体30和与上部主体30的横向侧重叠以覆盖脚部的距离T并且其底部侧边缘部分31a固定地附接到底部表面的外部上部构件31 上身30。外侧上部构件31的下侧边缘部31a的后端部A位于跟骨的负载中心线C的后方，并且外侧上部构件31的后侧缘部31c与脚部的距离T的后方的上身30。外侧上部构件31的脚背侧边缘部31b与鞋带4连接。在上主体30的跟部的侧面设置有沿纵向可扩张和收缩的区域10。区域10的顶端延伸到上主体30的开口，并且区域10的底端B设置在跟骨的负载中心线C的前方，并且低于对应于侧面的55％的高度h 脚踝高度H。

10. 发明授权

US5736775A Semiconductor device having a concentration peak position coinciding with a channel stopper 失效
标题翻译：具有与通道阻塞重合的浓度峰值位置的半导体器件
公开(公告)号：US5736775A
公开(公告)日：1998-04-07
申请号：US585993
申请日：1996-01-11
申请人： Natsuki Sato
发明人： Natsuki Sato
IPC分类号： H01L21/76 , H01L21/28 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L23/522 , H01L27/04 , H01L27/108 , H01L29/76 , H01L29/94
CPC分类号： H01L27/10852 , H01L27/10817
摘要： A semiconductor device includes a field insulating film, a channel stopper, and a diffusion layer. The field insulating film is formed on one major surface of a semiconductor substrate of a first conductivity type to surround an element region. The channel stopper of the first conductivity type is formed immediately below the field insulating film. The diffusion layer of an opposite conductivity type is formed to be adjacent to the channel stopper. The impurity concentration peak position of the diffusion layer substantially coincides with that of the channel stopper.
摘要翻译：半导体器件包括场绝缘膜，沟道阻挡层和扩散层。场绝缘膜形成在第一导电类型的半导体衬底的一个主表面上以围绕元件区域。第一导电类型的沟道阻挡件形成在场绝缘膜的正下方。相反导电型的扩散层形成为与通道阻挡件相邻。扩散层的杂质浓度峰值位置与沟道阻挡层的杂质浓度峰值位置基本一致。

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