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1. 发明授权

US07173361B2 Film bulk acoustic wave resonator 有权
标题翻译：薄膜体声波谐振器
公开(公告)号：US07173361B2
公开(公告)日：2007-02-06
申请号：US11028992
申请日：2005-01-03
申请人： Hisatoshi Saito , Takao Noguchi , Kenji Inoue
发明人： Hisatoshi Saito , Takao Noguchi , Kenji Inoue
IPC分类号： H01L41/08 , H03H9/54
CPC分类号： H03H9/02094 , H03H9/175 , H03H9/176
摘要： A film bulk acoustic wave resonator of the invention includes a substrate; a resonant structure provided on the substrate constituted by a lower electrode, a piezoelectric film and an upper electrode; and an acoustic multilayer of a plurality of reflective films provided between the substrate and the resonant structure. At least one of the reflective films of the acoustic multilayer has a specified crystal plane orientation, and an X-ray rocking curve full width at half maximum that is preferably not greater than 10 degrees, and more preferably is not greater than 3 degrees. This makes it possible to obtain better resonance characteristics than in the case of the prior art, by increasing the efficiency with which bulk waves propagating towards the substrate are reflected.
摘要翻译：本发明的薄膜体声波谐振器包括：基板; 设置在由下电极，压电膜和上电极构成的基板上的谐振结构; 以及设置在所述基板和所述谐振结构之间的多个反射膜的声学多层。声学多层反射膜中的至少一个具有特定的晶面取向，并且X射线摇摆曲线半峰全宽度优选不大于10度，更优选不大于3度。这使得通过提高向衬底传播的体波的效率被反射，可以获得比现有技术的情况更好的谐振特性。

2. 发明申请

US20050231072A1 Piezoelectric resonator and electronic component provided therewith 有权
标题翻译：压电谐振器和电子元件
公开(公告)号：US20050231072A1
公开(公告)日：2005-10-20
申请号：US11079211
申请日：2005-03-15
申请人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
发明人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
IPC分类号： H03H9/17 , H01L41/083 , H03H9/58
CPC分类号： H03H9/583 , H03H9/588 , H03H9/589
摘要： A piezoelectric resonator according to an embodiment of the present invention has a first transducer connected to a first signal terminal, and a second transducer connected to a second signal terminal. The first transducer and the second transducer are stacked in a predetermined direction. At least one of the first transducer and the second transducer has a first piezoelectric film sandwiched between a pair of electrode films on both sides, and a second piezoelectric film comprised of a film type different from that of the first piezoelectric film and sandwiched between a pair of electrode films on both sides.
摘要翻译：根据本发明的实施例的压电谐振器具有连接到第一信号端子的第一换能器和连接到第二信号端子的第二换能器。第一换能器和第二换能器沿预定方向堆叠。第一换能器和第二换能器中的至少一个具有夹在两侧的一对电极膜之间的第一压电薄膜和由与第一压电薄膜不同的薄膜形式构成的第二压电薄膜的两侧电极膜。

3. 发明申请

US20050194626A1 Electronic device and method of fabricating the same 有权
标题翻译：电子装置及其制造方法
公开(公告)号：US20050194626A1
公开(公告)日：2005-09-08
申请号：US11069723
申请日：2005-02-28
申请人： Takao Noguchi , Kenji Inoue , Hisatoshi Saito
发明人： Takao Noguchi , Kenji Inoue , Hisatoshi Saito
IPC分类号： H01L27/04 , H01L21/00 , H01L21/822 , H01L21/8246 , H01L27/105 , H01L29/76 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/319 , H01L41/39 , H03H3/02 , H03H9/17
CPC分类号： H01L41/316 , H03H9/02149 , H03H9/174 , H03H9/175
摘要： The electronic device includes a substrate, a lower conductive film provided on the substrate, a functional film provided on the lower conductive film, and a crystallinity barrier film provided between the lower conductive film and the functional film. The present invention prevents the crystallinity of the functional film being affected by the crystallinity or the material selection of the lower conductive film, so it becomes possible to use a low-cost metal such as aluminum (Al) for the lower conductive film, and to use a low-cost method for forming the film, thereby making it possible to improve the crystallinity of the functional film without using a costly film-formation method such as epitaxial growth. For the crystallinity barrier film, there can be used a material having an amorphous structure.
摘要翻译：电子装置包括基板，设置在基板上的下导电膜，设置在下导电膜上的功能膜，以及设置在下导电膜和功能膜之间的结晶阻挡膜。本发明防止功能膜的结晶性受到下导电膜的结晶性或材料选择的影响，因此可以使用低成本金属如铝（Al）作为下导电膜，以及使用低成本的方法形成膜，从而可以在不使用诸如外延生长的昂贵的成膜方法的情况下提高功能膜的结晶度。对于结晶阻挡膜，可以使用具有无定形结构的材料。

4. 发明授权

US07105880B2 Electronic device and method of fabricating the same 有权
标题翻译：电子装置及其制造方法
公开(公告)号：US07105880B2
公开(公告)日：2006-09-12
申请号：US11069723
申请日：2005-02-28
申请人： Takao Noguchi , Kenji Inoue , Hisatoshi Saito
发明人： Takao Noguchi , Kenji Inoue , Hisatoshi Saito
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L41/316 , H03H9/02149 , H03H9/174 , H03H9/175
摘要： The electronic device includes a substrate, a lower conductive film provided on the substrate, a functional film provided on the lower conductive film, and a crystallinity barrier film provided between the lower conductive film and the functional film. The present invention prevents the crystallinity of the functional film being affected by the crystallinity or the material selection of the lower conductive film, so it becomes possible to use a low-cost metal such as aluminum (Al) for the lower conductive film, and to use a low-cost method for forming the film, thereby making it possible to improve the crystallinity of the functional film without using a costly film-formation method such as epitaxial growth. For the crystallinity barrier film, there can be used a material having an amorphous structure.
摘要翻译：电子装置包括基板，设置在基板上的下导电膜，设置在下导电膜上的功能膜，以及设置在下导电膜和功能膜之间的结晶阻挡膜。本发明防止功能膜的结晶性受到下导电膜的结晶性或材料选择的影响，因此可以使用低成本金属如铝（Al）作为下导电膜，以及使用低成本的方法形成膜，从而可以在不使用诸如外延生长的昂贵的成膜方法的情况下提高功能膜的结晶度。对于结晶阻挡膜，可以使用具有无定形结构的材料。

5. 发明授权

US07075214B2 Piezoelectric resonator and electronic component provided therewith 有权
标题翻译：压电谐振器和电子元件
公开(公告)号：US07075214B2
公开(公告)日：2006-07-11
申请号：US11061883
申请日：2005-02-22
申请人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
发明人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
IPC分类号： H01L41/08 , H03H9/54
CPC分类号： H03H9/589 , H03H9/584 , H03H9/585 , H03H9/588
摘要： A piezoelectric resonator according to an embodiment of the present invention is a piezoelectric resonator for obtaining a signal of a predetermined resonance frequency from a bulk acoustic wave propagating inside a piezoelectric film. This piezoelectric resonator has a plurality of transducers stacked in a predetermined direction, and a propagation area of the bulk acoustic wave varies in a propagation direction of the bulk acoustic wave.
摘要翻译：根据本发明的实施例的压电谐振器是用于从在压电膜内传播的体声波获得预定谐振频率的信号的压电谐振器。该压电谐振器具有沿预定方向堆叠的多个换能器，并且体声波的传播面积在体声波的传播方向上变化。

6. 发明申请

US20050189846A1 Film bulk acoustic wave resonator 有权
标题翻译：薄膜体声波谐振器
公开(公告)号：US20050189846A1
公开(公告)日：2005-09-01
申请号：US11028992
申请日：2005-01-03
申请人： Hisatoshi Saito , Takao Noguchi , Kenji Inoue
发明人： Hisatoshi Saito , Takao Noguchi , Kenji Inoue
IPC分类号： H01L41/09 , H01L41/08 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/319 , H03H9/02 , H03H9/17
CPC分类号： H03H9/02094 , H03H9/175 , H03H9/176
摘要： A film bulk acoustic wave resonator of the invention includes a substrate; a resonant structure provided on the substrate constituted by a lower electrode, a piezoelectric film and an upper electrode; and an acoustic multilayer of a plurality of reflective films provided between the substrate and the resonant structure. At least one of the reflective films of the acoustic multilayer has a specified crystal plane orientation, and an X-ray rocking curve full width at half maximum that is preferably not greater than 10 degrees, and more preferably is not greater than 3 degrees. This makes it possible to obtain better resonance characteristics than in the case of the prior art, by increasing the efficiency with which bulk waves propagating towards the substrate are reflected.
摘要翻译：本发明的薄膜体声波谐振器包括：基板; 设置在由下电极，压电膜和上电极构成的基板上的谐振结构; 以及设置在所述基板和所述谐振结构之间的多个反射膜的声学多层。声学多层反射膜中的至少一个具有指定的晶面取向，并且X射线摇摆曲线半峰全宽优选不大于10度，更优选不大于3度。这使得通过提高向衬底传播的体波的效率被反射，可以获得比现有技术的情况更好的谐振特性。

7. 发明授权

US07148604B2 Piezoelectric resonator and electronic component provided therewith 有权
标题翻译：压电谐振器和电子元件
公开(公告)号：US07148604B2
公开(公告)日：2006-12-12
申请号：US11079211
申请日：2005-03-15
申请人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
发明人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
IPC分类号： H01L41/04 , H01L41/08 , H03H9/205
CPC分类号： H03H9/583 , H03H9/588 , H03H9/589
摘要： A piezoelectric resonator according to an embodiment of the present invention has a first transducer connected to a first signal terminal, and a second transducer connected to a second signal terminal. The first transducer and the second transducer are stacked in a predetermined direction. At least one of the first transducer and the second transducer has a first piezoelectric film sandwiched between a pair of electrode films on both sides, and a second piezoelectric film comprised of a film type different from that of the first piezoelectric film and sandwiched between a pair of electrode films on both sides.
摘要翻译：根据本发明的实施例的压电谐振器具有连接到第一信号端子的第一换能器和连接到第二信号端子的第二换能器。第一换能器和第二换能器沿预定方向堆叠。第一换能器和第二换能器中的至少一个具有夹在两侧的一对电极膜之间的第一压电薄膜和由与第一压电薄膜不同的薄膜形式构成的第二压电薄膜的两侧电极膜。

8. 发明申请

US20050200432A1 Piezoelectric resonator and electronic component provided therewith 有权
标题翻译：压电谐振器和电子元件
公开(公告)号：US20050200432A1
公开(公告)日：2005-09-15
申请号：US11061883
申请日：2005-02-22
申请人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
发明人： Kenji Inoue , Hisatoshi Saito , Takao Noguchi
IPC分类号： H03H9/17 , H03H9/15 , H03H9/54 , H03H9/58
CPC分类号： H03H9/589 , H03H9/584 , H03H9/585 , H03H9/588
摘要： A piezoelectric resonator according to an embodiment of the present invention is a piezoelectric resonator for obtaining a signal of a predetermined resonance frequency from a bulk acoustic wave propagating inside a piezoelectric film. This piezoelectric resonator has a plurality of transducers stacked in a predetermined direction, and a propagation area of the bulk acoustic wave varies in a propagation direction of the bulk acoustic wave.
摘要翻译：根据本发明的实施例的压电谐振器是用于从在压电膜内传播的体声波获得预定谐振频率的信号的压电谐振器。该压电谐振器具有沿预定方向堆叠的多个换能器，并且体声波的传播面积在体声波的传播方向上变化。

9. 发明申请

US20050093157A1 Electronic device and method of fabricating the same 有权
标题翻译：电子装置及其制造方法
公开(公告)号：US20050093157A1
公开(公告)日：2005-05-05
申请号：US10786776
申请日：2004-02-24
申请人： Takao Noguchi , Hisatoshi Saito
发明人： Takao Noguchi , Hisatoshi Saito
IPC分类号： H01L41/09 , H01L21/8246 , H01L27/105 , H01L29/15 , H01L29/20 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/319 , H01L41/39 , H03H3/02 , H03H9/02 , H03H9/17 , H01L29/76 , H01L31/062 , H01L21/44 , H01L23/52
CPC分类号： H03H9/02094 , H01L29/152 , H01L29/2003 , H01L2924/0002 , H03H3/02 , H03H9/174 , H03H9/175 , H01L2924/00
摘要： An electronic device includes a substrate, a lower conductive film formed on the substrate and a functional film formed on the lower conductive film. In the present invention, an adhesion of the lower conductive film on the side of the substrate is greater than or equal to 0.1 N/cm. The electronic device according to this invention exhibits high mechanical strength that makes it very reliable. This is because the invention prevents the physical exfoliation of the lower conductive film that is apt to occur during or after fabrication of the electronic device when the adhesion of the lower conductive film is lower than 0.1 N/cm.
摘要翻译：电子设备包括基板，形成在基板上的下导电膜和形成在下导电膜上的功能膜。在本发明中，下导电膜在基板一侧的粘合力大于或等于0.1N / cm。根据本发明的电子设备表现出高机械强度，使其非常可靠。这是因为，当下导电膜的粘合力低于0.1N / cm时，本发明防止在电子器件制造期间或之后容易发生的下导电膜的物理剥离。

10. 发明授权

US07042090B2 Electronic device and method of fabricating the same 有权
标题翻译：电子装置及其制造方法
公开(公告)号：US07042090B2
公开(公告)日：2006-05-09
申请号：US10786776
申请日：2004-02-24
申请人： Takao Noguchi , Hisatoshi Saito
发明人： Takao Noguchi , Hisatoshi Saito
IPC分类号： H01L23/48
CPC分类号： H03H9/02094 , H01L29/152 , H01L29/2003 , H01L2924/0002 , H03H3/02 , H03H9/174 , H03H9/175 , H01L2924/00
摘要： An electronic device includes a substrate, a lower conductive film formed on the substrate and a functional film formed on the lower conductive film. In the present invention, an adhesion of the lower conductive film on the side of the substrate is greater than or equal to 0.1 N/cm. The electronic device according to this invention exhibits high mechanical strength that makes it very reliable. This is because the invention prevents the physical exfoliation of the lower conductive film that is apt to occur during or after fabrication of the electronic device when the adhesion of the lower conductive film is lower than 0.1 N/cm.
摘要翻译：电子设备包括基板，形成在基板上的下导电膜和形成在下导电膜上的功能膜。在本发明中，下导电膜在基板一侧的粘合力大于或等于0.1N / cm。根据本发明的电子设备表现出高机械强度，使其非常可靠。这是因为，当下导电膜的粘合力低于0.1N / cm时，本发明防止在电子器件制造期间或之后容易发生的下导电膜的物理剥离。

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