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1. 发明授权

US08502292B2 Semiconductor device with memory cells 有权
标题翻译：具有存储单元的半导体器件
公开(公告)号：US08502292B2
公开(公告)日：2013-08-06
申请号：US13182488
申请日：2011-07-14
申请人： Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
发明人： Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L27/11517 , G11C16/0433 , G11C16/26 , H01L27/1156 , H01L29/78
摘要： A semiconductor device with a novel structure is provided, which can hold stored data even when no power is supplied and which has no limitations on the number of writing operations. A semiconductor device is formed using a material which enables off-state current of a transistor to be reduced significantly; e.g., an oxide semiconductor material which is a wide-gap semiconductor. With use of a semiconductor material which enables off-state current of a transistor to be reduced significantly, the semiconductor device can hold data for a long period. In a semiconductor device with a memory cell array, parasitic capacitances generated in the nodes of the first to the m-th memory cells connected in series are substantially equal, whereby the semiconductor device can operate stably.
摘要翻译：提供具有新颖结构的半导体器件，其即使在没有供电的情况下也可以保存存储的数据，并且对写入操作的数量没有限制。使用能够显着降低晶体管的截止电流的材料形成半导体器件; 例如，作为宽间隙半导体的氧化物半导体材料。通过使用能够显着降低晶体管的截止电流的半导体材料，半导体器件可以长期保存数据。在具有存储单元阵列的半导体器件中，在串联连接的第一至第m存储器单元的节点中产生的寄生电容基本相等，由此半导体器件可以稳定地工作。

2. 发明授权

US08488394B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08488394B2
公开(公告)日：2013-07-16
申请号：US13197839
申请日：2011-08-04
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
IPC分类号： G11C7/00
CPC分类号： G11C7/00 , G11C11/403 , G11C11/4087 , H01L27/11517 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in off-state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.
摘要翻译：目的是提供具有新颖结构的半导体器件，其即使在不提供电力且具有无限数量的写周期的情况下也可以保存存储的数据。使用包括诸如氧化物半导体的宽带隙半导体的存储单元形成半导体器件。半导体器件包括具有输出低于用于从存储单元读取数据的参考电位的电位的功能的电位变化电路。当使用允许充分降低包含在存储单元中的晶体管的截止电流的宽带隙半导体时，可以提供能够长期保存数据的半导体器件。

3. 发明授权

US08411480B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08411480B2
公开(公告)日：2013-04-02
申请号：US13082464
申请日：2011-04-08
申请人： Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
发明人： Shuhei Nagatsuka , Kiyoshi Kato , Takanori Matsuzaki , Hiroki Inoue
IPC分类号： G11C5/06
CPC分类号： G11C11/4093 , G11C11/405 , G11C11/4074 , G11C11/4085 , G11C11/4096 , H01L27/1156 , H01L27/1203
摘要： An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor. The memory cell includes a writing transistor, a reading transistor, and a selecting transistor. Using a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and holding data for a long time can be provided.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也能够保存存储的数据。半导体器件包括具有宽栅半导体的存储单元，例如氧化物半导体。存储单元包括写入晶体管，读取晶体管和选择晶体管。使用宽栅半导体，可以提供能够充分降低存储单元中包含的晶体管的截止电流并长时间保持数据的半导体器件。

4. 发明申请

US20120033487A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20120033487A1
公开(公告)日：2012-02-09
申请号：US13195105
申请日：2011-08-01
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24 , H01L27/108
CPC分类号： H01L27/1052 , G11C11/404 , G11C11/405 , G11C11/4091 , G11C16/0408 , G11C16/08 , G11C16/24 , H01L21/02565 , H01L21/02631 , H01L21/425 , H01L21/441 , H01L21/477 , H01L27/108 , H01L27/11521 , H01L27/11526 , H01L27/1156 , H01L27/1207 , H01L27/1222 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/66969 , H01L29/78651 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.
摘要翻译：提供了包括非易失性存储单元的半导体器件，其中包括包括氧化物半导体的写入晶体管，包括与写入晶体管不同的半导体材料的读取晶体管和电容器。通过接通写入晶体管并将电位施加到写入晶体管的源极（或电极），电容器的一个电极和读取晶体管的栅电极的节点处，将数据写入存储单元电连接，然后关闭写入晶体管，使得预定量的电荷被保持在节点中。此外，当使用p沟道晶体管作为读取晶体管时，读取电位为正电位。

5. 发明申请

US20120033486A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE 有权
标题翻译：用于驱动半导体器件的半导体器件和方法
公开(公告)号：US20120033486A1
公开(公告)日：2012-02-09
申请号：US13195089
申请日：2011-08-01
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C11/24 , H01L27/06 , H01L29/04
CPC分类号： G11C16/0408 , G11C11/405 , G11C16/02
摘要： It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件，其中即使在未提供电力的情况下也可以保持存储的数据，并且对写入操作的数量没有限制。半导体器件包括多个存储单元，每个存储单元包括包括第一半导体材料的晶体管，包括与第一半导体材料不同的第二半导体材料的晶体管，以及电容器，以及电位切换电路，在写作期间的电源供应潜力。因此，可以充分地抑制半导体器件的功耗。

6. 发明申请

US20120056647A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20120056647A1
公开(公告)日：2012-03-08
申请号：US13221947
申请日：2011-08-31
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
IPC分类号： H03K17/00
CPC分类号： G11C11/403 , G11C16/0433 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1156 , H01L27/1225 , H01L29/7869
摘要： The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode.
摘要翻译：半导体器件包括存储单元，其包括第一晶体管，第一晶体管包括第一沟道形成区，第一栅电极以及第一源区和漏区; 第二晶体管，包括设置成与第一源极区域或第一漏极区域中的至少一部分重叠的第二沟道形成区域，第二源极电极，电连接到第一栅极电极的第二漏极电极，以及第二栅电极; 以及设置在第一晶体管和第二晶体管之间的绝缘层。在第二晶体管需要处于截止状态的期间中，至少当向第一源极区域或第一漏极区域提供正电位时，向第二栅电极提供负电位。

7. 发明申请

US20120033485A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120033485A1
公开(公告)日：2012-02-09
申请号：US13193966
申请日：2011-07-29
申请人： Takanori Matsuzaki , Kiyoshi Kato , Shuhei Nagatsuka , Hiroki Inoue
发明人： Takanori Matsuzaki , Kiyoshi Kato , Shuhei Nagatsuka , Hiroki Inoue
IPC分类号： G11C11/24
CPC分类号： G11C16/0408 , G11C11/405 , G11C11/4076 , G11C11/4087 , H01L27/11521 , H01L27/1156 , H01L27/1207
摘要： In a semiconductor device which includes a bit line, m (m is a natural number of 3 or more) word lines, a source line, m signal lines, first to m-th memory cells, and a driver circuit, the memory cell includes a first transistor and a second transistor for storing electrical charge accumulated in a capacitor, and the second transistor includes a channel formed in an oxide semiconductor layer. In the semiconductor device, the driver circuit generates a signal to be output to a (j−1)th (j is a natural number of 3 or more) signal line with the use of a signal to be output to a j-th signal line.
摘要翻译：在包括位线的m（m为3以上的自然数）字线，源极线，m条信号线，第1〜第m存储器单元和驱动电路的半导体器件中，所述存储单元包括第一晶体管和第二晶体管，用于存储积聚在电容器中的电荷，第二晶体管包括形成在氧化物半导体层中的沟道。在半导体装置中，驱动电路使用要输出到第j信号的信号，生成输出到第（j-1）（j为3以上的自然数）信号线的信号线。

8. 发明授权

US08654566B2 Semiconductor device and driving method thereof 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08654566B2
公开(公告)日：2014-02-18
申请号：US13221947
申请日：2011-08-31
申请人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
发明人： Shuhei Nagatsuka , Takanori Matsuzaki , Hiroki Inoue , Kiyoshi Kato
IPC分类号： G11C11/24
CPC分类号： G11C11/403 , G11C16/0433 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1156 , H01L27/1225 , H01L29/7869
摘要： The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode.
摘要翻译：半导体器件包括存储单元，其包括第一晶体管，第一晶体管包括第一沟道形成区，第一栅电极以及第一源区和漏区; 第二晶体管，包括设置成与第一源极区域或第一漏极区域中的至少一部分重叠的第二沟道形成区域，第二源极电极，电连接到第一栅极电极的第二漏极电极，以及第二栅电极; 以及设置在第一晶体管和第二晶体管之间的绝缘层。在第二晶体管需要处于截止状态的期间中，至少当向第一源极区域或第一漏极区域提供正电位时，向第二栅电极提供负电位。

9. 发明授权

US08582348B2 Semiconductor device and method for driving semiconductor device 有权
标题翻译：用于驱动半导体器件的半导体器件和方法
公开(公告)号：US08582348B2
公开(公告)日：2013-11-12
申请号：US13195089
申请日：2011-08-01
申请人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
发明人： Hiroki Inoue , Kiyoshi Kato , Takanori Matsuzaki , Shuhei Nagatsuka
IPC分类号： G11C8/00 , G11C8/18 , G11C5/14 , G11C11/34 , G11C14/00
CPC分类号： G11C16/0408 , G11C11/405 , G11C16/02
摘要： It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed.
摘要翻译：本发明的目的是提供一种具有新颖结构的半导体器件，其中即使在未提供电力的情况下也可以保持存储的数据，并且对写入操作的数量没有限制。半导体器件包括多个存储单元，每个存储单元包括包括第一半导体材料的晶体管，包括与第一半导体材料不同的第二半导体材料的晶体管，以及电容器，以及电位切换电路，在写作期间的电源供应潜力。因此，可以充分地抑制半导体器件的功耗。

10. 发明授权

US08451651B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08451651B2
公开(公告)日：2013-05-28
申请号：US13027543
申请日：2011-02-15
申请人： Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
发明人： Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
IPC分类号： G11C11/24
CPC分类号： G11C16/0408 , H01L27/11519 , H01L27/11521 , H01L27/1156
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。使用能够充分降低诸如大孔半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。能够充分降低晶体管的截止电流的半导体材料的使用允许长时间保持数据。此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。这使得可以防止数据写入错误。

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