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    • 4. 发明授权
    • Swiveling work machine
    • 回转作业机
    • US07500532B2
    • 2009-03-10
    • US11225873
    • 2005-09-13
    • Kenzo KogaShizuo ShimoieYoshihiro KatoFumiki SatoTakanori MatsumotoNaoki Miyata
    • Kenzo KogaShizuo ShimoieYoshihiro KatoFumiki SatoTakanori MatsumotoNaoki Miyata
    • B62D33/02
    • E02F9/0816E02F9/121
    • A swivel work machine includes a traveling unit, a swivel base plate supported on the traveling unit to be pivotable about a vertical swivel axis, the swivel base plate having a first lateral side and a second lateral side provided across said vertical axis, a pair of upper and lower support brackets disposed at a front end of the swivel base plate with an offset toward the first lateral side and adapted for supporting an implement, a pair of left and right vertical ribs extending rearward from the support brackets and fixed to the swivel base plate and a cabin mounted on the swivel base plate. The cabin is disposed with an offset toward the second lateral side relative to the support brackets, a bottom of the cabin being disposed downwardly of the upper support bracket. The vertical rib disposed on the side of the second lateral side extends, from its front portion to its intermediate portion, parallel with a side face of the cabin on the side of the first lateral side.
    • 旋转作业机包括行进单元,支撑在行进单元上的旋转底板,可绕垂直旋转轴线转动,旋转基板具有横跨所述垂直轴设置的第一横向侧和第二横向侧,一对 上部和下部支撑架设置在旋转基板的前端,偏移朝向第一侧面并适于支撑工具,一对左右垂直肋条从支撑托架向后延伸并固定到旋转底座 板和安装在旋转底板上的舱室。 机舱相对于支撑托架设置成朝向第二侧面的偏移,舱的底部设置在上支撑支架的下方。 设置在第二侧面侧的纵肋从其前部延伸到其中间部分,与第一侧面侧的车厢侧面平行。
    • 10. 发明授权
    • Semiconductor device and method of fabricating the same including trenches of different aspect ratios
    • 半导体器件及其制造方法,包括不同纵横比的沟槽
    • US07781293B2
    • 2010-08-24
    • US11611030
    • 2006-12-14
    • Takanori Matsumoto
    • Takanori Matsumoto
    • H01L21/336H01L21/76H01L21/302
    • H01L21/76229H01L21/76232
    • A method of fabricating a semiconductor device includes etching a silicon oxide film, a silicon nitride film, a polycrystalline silicone film, and a gate insulating film in a predetermined pattern including a first opening width corresponding to a first trench and a second opening width corresponding to a second trench, the second opening width being larger than the first opening width, and etching the semiconductor substrate to simultaneously form the first and second trenches so that a first depth of the first trench is equal to a second depth of the second trench, and a first angle between a first side surface and a first bottom surface of the first trench is smaller than a second angle between a second side surface and a second bottom surface of the second trench, and the first trench includes a curved portion at an upper portion of the first side surface.
    • 一种制造半导体器件的方法包括以包括对应于第一沟槽的第一开口宽度和对应于第一沟槽的第二开口宽度的预定图案蚀刻氧化硅膜,氮化硅膜,多晶硅膜和栅极绝缘膜 第二沟槽,第二开口宽度大于第一开口宽度,并且蚀刻半导体衬底以同时形成第一和第二沟槽,使得第一沟槽的第一深度等于第二沟槽的第二深度,以及 第一沟槽的第一侧表面和第一底表面之间的第一角度小于第二沟槽的第二侧表面和第二底表面之间的第二角度,并且第一沟槽包括在上部的弯曲部分 的第一侧面。