专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110205785A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和驱动方法
公开(公告)号：US20110205785A1
公开(公告)日：2011-08-25
申请号：US13027546
申请日：2011-02-15
申请人： Shuhei NAGATSUKA , Kiyoshi KATO , Takanori MATSUZAKI , Hiroki INOUE
发明人： Shuhei NAGATSUKA , Kiyoshi KATO , Takanori MATSUZAKI , Hiroki INOUE
IPC分类号： G11C11/24
CPC分类号： G11C8/08 , G11C11/413
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor and the semiconductor device includes a potential conversion circuit which functions to output a potential lower than a reference potential for reading data from the memory cell. With the use of a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and capable of holding data for a long time can be provided.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。半导体器件包括具有宽栅半导体例如氧化物半导体的存储单元，并且该半导体器件包括用于输出低于用于从存储单元读取数据的参考电位的电位的电位转换电路。通过使用宽栅半导体，可以提供能够充分降低包含在存储单元中并能够长时间保持数据的晶体管的截止电流的半导体器件。

2. 发明申请

US20110255325A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110255325A1
公开(公告)日：2011-10-20
申请号：US13082464
申请日：2011-04-08
申请人： Shuhei NAGATSUKA , Kiyoshi KATO , Takanori MATSUZAKI , Hiroki INOUE
发明人： Shuhei NAGATSUKA , Kiyoshi KATO , Takanori MATSUZAKI , Hiroki INOUE
IPC分类号： G11C5/06
CPC分类号： G11C11/4093 , G11C11/405 , G11C11/4074 , G11C11/4085 , G11C11/4096 , H01L27/1156 , H01L27/1203
摘要： An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device includes a memory cell including a widegap semiconductor, for example, an oxide semiconductor. The memory cell includes a writing transistor, a reading transistor, and a selecting transistor. Using a widegap semiconductor, a semiconductor device capable of sufficiently reducing the off-state current of a transistor included in a memory cell and holding data for a long time can be provided.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也能够保存存储的数据。半导体器件包括具有宽栅半导体的存储单元，例如氧化物半导体。存储单元包括写入晶体管，读取晶体管和选择晶体管。使用宽栅半导体，可以提供能够充分降低存储单元中包含的晶体管的截止电流并长时间保持数据的半导体器件。

3. 发明申请

US20110205775A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110205775A1
公开(公告)日：2011-08-25
申请号：US13027543
申请日：2011-02-15
申请人： Takanori MATSUZAKI , Kiyoshi KATO , Hiroki INOUE , Shuhei NAGATSUKA
发明人： Takanori MATSUZAKI , Kiyoshi KATO , Hiroki INOUE , Shuhei NAGATSUKA
IPC分类号： G11C5/06
CPC分类号： G11C16/0408 , H01L27/11519 , H01L27/11521 , H01L27/1156
摘要： An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。使用能够充分降低诸如大孔半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。能够充分降低晶体管的截止电流的半导体材料的使用允许长时间保持数据。此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。这使得可以防止数据写入错误。

4. 发明申请

US20120294061A1 WORD LINE DIVIDER AND STORAGE DEVICE 有权
公开(公告)号：US20120294061A1
公开(公告)日：2012-11-22
申请号：US13472789
申请日：2012-05-16
申请人： Shuhei NAGATSUKA , Takanori MATSUZAKI , Hiroki INOUE
发明人： Shuhei NAGATSUKA , Takanori MATSUZAKI , Hiroki INOUE
IPC分类号： G11C5/06
CPC分类号： G11C8/14 , G11C8/08 , G11C11/408 , G11C11/4087 , G11C2216/14
摘要： A word line divider which has a simplified circuit structure and can operate stably is provided. A storage device which has a simplified circuit structure and can operate stably is provided. A transistor whose leakage current is extremely low is connected in series with a portion between a word line and a sub word line so that the word line divider is constituted. The transistor can include an oxide semiconductor for a semiconductor layer in which a channel is formed. Such a word line divider whose circuit structure is simplified is used in the storage device.
摘要翻译：提供了具有简化的电路结构并能够稳定运行的字线分配器。提供了具有简化的电路结构并且可以稳定运行的存储装置。泄漏电流非常低的晶体管与字线和子字线之间的部分串联连接，构成字线分配器。晶体管可以包括其中形成沟道的半导体层的氧化物半导体。在存储装置中使用这样的电路结构简化的字线分配器。

5. 发明申请

US20120033484A1 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20120033484A1
公开(公告)日：2012-02-09
申请号：US13193756
申请日：2011-07-29
申请人： Takanori MATSUZAKI , Shuhei NAGATSUKA , Hiroki INOUE
发明人： Takanori MATSUZAKI , Shuhei NAGATSUKA , Hiroki INOUE
IPC分类号： G11C11/24
CPC分类号： G11C16/0408 , G11C11/405 , G11C16/02
摘要： The semiconductor device is formed using a material which allows a sufficient reduction in off-state current of a transistor; for example, an oxide semiconductor material, which is a wide gap semiconductor, is used. When a semiconductor material which allows a sufficient reduction in off-state current of a transistor is used, the semiconductor device can hold data for a long period. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
摘要翻译：使用允许充分降低晶体管的截止电流的材料形成半导体器件; 例如，使用作为宽间隙半导体的氧化物半导体材料。当使用允许充分降低晶体管的截止电流的半导体材料时，半导体器件可以长时间保存数据。此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。这使得可以防止数据写入错误。

6. 发明申请

US20110280061A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110280061A1
公开(公告)日：2011-11-17
申请号：US13094863
申请日：2011-04-27
申请人： Toshihiko SAITO , Takanori MATSUZAKI , Shuhei NAGATSUKA , Hiroki INOUE
发明人： Toshihiko SAITO , Takanori MATSUZAKI , Shuhei NAGATSUKA , Hiroki INOUE
IPC分类号： G11C11/24 , G11C7/00
CPC分类号： H01L29/78 , G11C11/403 , G11C11/406 , G11C16/0416 , G11C2211/4065 , H01L27/11521 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off.
摘要翻译：一种半导体器件包括多个包括第一晶体管和第二晶体管的存储单元，包括放大器电路和开关元件的读取电路以及刷新控制电路。第一通道形成区域和第二通道形成区域包含不同的材料作为它们各自的主要成分。第一栅电极电连接到第二源电极和第二漏极之一。第二源极和第二漏极中的另一个电连接到放大器电路的一个输入端。放大器电路的输出端子通过开关元件连接到第二源电极和第二漏电极中的另一个。刷新控制电路被配置为控制开关元件是打开还是关闭。

7. 发明申请

US20110227072A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110227072A1
公开(公告)日：2011-09-22
申请号：US13041581
申请日：2011-03-07
申请人： Hiroki INOUE , Takanori MATSUZAKI , Shuhei NAGATSUKA
发明人： Hiroki INOUE , Takanori MATSUZAKI , Shuhei NAGATSUKA
IPC分类号： H01L29/786
CPC分类号： H01L27/11521 , G11C16/0408 , H01L27/11551 , H01L27/1156 , H01L27/1207 , H01L27/1225 , H01L28/60
摘要： A semiconductor device including a nonvolatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that a predetermined amount of charge is held at the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.
摘要翻译：提供一种半导体器件，其包括包括具有氧化物半导体的写入晶体管的非易失性存储单元，包括与写入晶体管不同的半导体材料的读取晶体管和电容器。通过接通写入晶体管并将电位提供给写入晶体管的源极（或电极），电容器的一个电极和读取晶体管的栅电极的节点，将数据写入存储单元彼此电连接，然后关闭写入晶体管，使得在节点处保持预定量的电荷。此外，当使用p沟道晶体管作为读取晶体管时，读取电位为正电位。

8. 发明申请

US20110227074A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110227074A1
公开(公告)日：2011-09-22
申请号：US13045873
申请日：2011-03-11
申请人： Kiyoshi KATO , Shuhei NAGATSUKA
发明人： Kiyoshi KATO , Shuhei NAGATSUKA
IPC分类号： H01L27/088
CPC分类号： H01L27/1108 , G11C16/0408 , H01L27/0688 , H01L27/115 , H01L27/11521 , H01L27/11551 , H01L27/1156 , H01L27/1225 , H01L28/60
摘要： A semiconductor device with a novel structure is provided in which stored data can be held even when power is not supplied and the number of writing is not limited. The semiconductor includes a second transistor and a capacitor over a first transistor. The capacitor includes a source or drain electrode and a gate insulating layer of the second transistor and a capacitor electrode over an insulating layer which covers the second transistor. The gate electrode of the second transistor and the capacitor electrode overlap at least partly with each other with the insulating layer interposed therebetween. By forming the gate electrode of the second transistor and the capacitor electrode using different layers, an integration degree of the semiconductor device can be improved.
摘要翻译：提供具有新颖结构的半导体器件，其中即使在不提供电力并且写入次数不受限制的情况下，也可以保持存储的数据。半导体在第一晶体管上包括第二晶体管和电容器。电容器包括源极或漏极以及第二晶体管的栅极绝缘层，以及覆盖第二晶体管的绝缘层上的电容器电极。第二晶体管的栅电极和电容器电极至少部分地彼此重叠，绝缘层位于它们之间。通过使用不同层来形成第二晶体管的栅电极和电容电极，可以提高半导体器件的集成度。

9. 发明申请

US20120112191A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120112191A1
公开(公告)日：2012-05-10
申请号：US13270455
申请日：2011-10-11
申请人： Kiyoshi KATO , Yutaka SHIONOIRI , Shuhei NAGATSUKA , Yuto YAKUBO , Jun KOYAMA
发明人： Kiyoshi KATO , Yutaka SHIONOIRI , Shuhei NAGATSUKA , Yuto YAKUBO , Jun KOYAMA
IPC分类号： H01L29/16
CPC分类号： H01L27/1156 , G11C11/403 , G11C16/0433 , H01L21/84 , H01L27/1203 , H01L27/1225 , H01L28/40
摘要： A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate.
摘要翻译：半导体器件或半导体存储器件中的数据保持期延长。半导体器件或半导体存储器包括存储电路，该存储器电路包括第一晶体管，其包括第一半导体层和第一栅极，第二晶体管包括第二半导体层，第二栅极和第三栅极。第一半导体层形成在与包括第二门的层相同。

10. 发明申请

US20120043933A1 ELECTRIC POWER CHARGE AND DISCHARGE SYSTEM 有权
标题翻译：电力充电和放电系统
公开(公告)号：US20120043933A1
公开(公告)日：2012-02-23
申请号：US13288316
申请日：2011-11-03
申请人： Shuhei NAGATSUKA , Akihiro KIMURA
发明人： Shuhei NAGATSUKA , Akihiro KIMURA
IPC分类号： H02J7/00
CPC分类号： H02J50/40 , H01M10/44 , H02J7/0052 , H02J7/025 , H02J17/00 , H02J50/10 , H02J50/27 , H04B1/3883 , Y10T307/696
摘要： An electric power charge and discharge system for an electronic device having a battery, by which the electronic device can be used for a long period of time. In a wireless communication device including a wireless driving portion including a first battery and a wireless charging portion including a second battery, the first battery is charged by electric power from a fixed power supply and the second battery is charged by using electromagnetic waves existing in an external space. Further, the first battery and the second battery are discharged alternately, and during a period in which the first battery is discharged, the second battery is charged.
摘要翻译：一种用于具有电池的电子设备的电力充放电系统，通过该电池，电子设备可以长时间使用。在包括第一电池的无线驱动部和包括第二电池的无线充电部的无线通信装置中，通过来自固定电源的电力对第一电池进行充电，并且通过使用存在于第二电池的电磁波对第二电池进行充电外部空间。此外，第一电池和第二电池交替放电，并且在第一电池放电的时段期间，第二电池被充电。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式