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1. 发明授权

US5843319A Positive-working radiation-sensitive mixture 失效
标题翻译：正面工作的辐射敏感混合物
公开(公告)号：US5843319A
公开(公告)日：1998-12-01
申请号：US902072
申请日：1997-07-29
申请人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
发明人： Klaus Juergen Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natsumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
IPC分类号： G03F7/004 , G03F7/039 , B01D15/00 , B01J39/00 , C02F1/42
CPC分类号： G03F7/0045 , G03F7/039
摘要： A process for producing a solution of a basic or non-basic sulfonium compound (A) of formulae II-V: ##STR1## wherein R.sup.5, R.sup.6 and R.sup.7 each independently represent a C.sub.1 -C.sub.18 alkyl, aryl or heteroaryl group or an aryl group mono-, di- or tri-substituted with an alkyl, an alkylaryl, an aryl, a halogen, an alkoxy, a phenoxy, a thiophenol, a phenylsulfonyl or a phenylsulphenyl; Y represents (CH.sub.2).sub.n (wherein n is 0 or 1), O or S; R.sup.8 and R.sup.9 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; R.sup.10 and R.sup.11 represent a C.sub.1 -C.sub.4 alkyl, alkoxy or a halogen; n is 5 or 6; and X.sub.2.sup.- represents a basic anion having a pK.sub.B value of -3 to +5; comprising the steps of: (a) dissolving a sulfonium salt (B) in a metal-ion free polar or non-polar solvent to form a solution, said sulfonium salt (B) being selected from said formulae II-V, wherein R.sup.5 to R.sup.11, Y and n of said sulfonium salt (B) have the sane meaning as above and X.sub.2.sup.- represents a non-nucleophilic anion; (b) contacting said solution for a sufficient amount of time with a basic ion-exchange resin having a quaternary ammonium group to replace the anion of (B) with a hydroxide ion and to form a sulfonium hydroxide solution; (c) separating said sulfonium hydroxide solution from the resin; and optionally (d) adding an active hydrogen containing compound or its base-labile precursor to said sulfonium hydroxide solution to yield a solution of the sulfonium compound (A) wherein X.sub.2.sup.- represents a basic anion other than a hydroxy ion.
摘要翻译：制备式II-V的碱性或非碱性锍化合物（A）的溶液的方法：[SR5R6R7] + X2-Ⅱ其中R5，R6和R7各自独立地独立地表示C1-C18烷基，芳基或杂芳基或被烷基，烷基芳基，芳基，卤素，烷氧基，苯氧基，苯硫酚，苯基磺酰基或苯基磺酰基单 - ，二 - 或三 - 取代的芳基苯基磺酰基; Y表示（CH 2）n（其中n为0或1），O或S; R8和R9代表C1-C4烷基，烷氧基或卤素; R10和R11表示C1-C4烷基，烷氧基或卤素; n为5或6; X2-表示pKB值为-3〜+5的碱性阴离子; 包括以下步骤：（a）将锍盐（B）溶解在无金属离子的极性或非极性溶剂中以形成溶液，所述锍盐（B）选自所述式II-V，其中R5至所述锍盐（B）的R 11，Y和n具有如上所述的正义，X2-表示非亲核阴离子; （b）用具有季铵基团的碱性离子交换树脂将所述溶液接触足够的时间以用氢氧根离子代替（B）的阴离子并形成氢氧化锍溶液; （c）从树脂中分离出氢氧化锍溶液; 和任选地（d）在所述氢氧化锍溶液中加入含活性氢的化合物或其碱不稳定的前体，得到其中X2代表羟基离子以外的碱性阴离子的锍化合物（A）的溶液。

2. 发明授权

US5525453A Positive-working radiation-sensitive mixture 失效
标题翻译：正面工作的辐射敏感混合物
公开(公告)号：US5525453A
公开(公告)日：1996-06-11
申请号：US196810
申请日：1994-02-15
申请人： Klaus J. Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
发明人： Klaus J. Przybilla , Takanori Kudo , Seiya Masuda , Yoshiaki Kinoshita , Natumi Suehiro , Munirathna Padmanaban , Hiroshi Okazaki , Hajime Endo , Ralph Dammel , Georg Pawlowski
IPC分类号： G03F7/004 , G03F7/039 , G03F7/021
CPC分类号： G03F7/0045 , G03F7/039
摘要： A novel positive-working radiation-sensitive mixture having a high sensitivity to radiation in a short-wavelength UV region is provided which can be developed in an aqueous alkaline solution, has a stable acid latent image and is used for the production of a semiconductor. The mixture comprises, as indispensable components, a) a binder insoluble in water but soluble in an aqueous alkaline solution, b) a compound having at least one bond cleavable with an acid, c) a compound capable of producing an acid upon radiation, and d.sub.1) a basic ammonium compound or d.sub.2) a basic sulfonium compound.
摘要翻译：提供了一种在短波长UV区域对辐射具有高灵敏度的新型正性辐射敏感性混合物，其可以在碱性水溶液中显影，具有稳定的酸性潜像并用于制备半导体。该混合物作为不可缺少的组分包含a）不溶于水但可溶于碱性水溶液的粘合剂，b）具有至少一个可与酸分离的键的化合物，c）能够在辐射时产生酸的化合物，和 d1）碱性铵化合物或d2）碱性锍化合物。

3. 发明申请

US20060088788A1 Composition for coating over a photoresist pattern 有权
公开(公告)号：US20060088788A1
公开(公告)日：2006-04-27
申请号：US10973633
申请日：2004-10-26
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph Dammel
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph Dammel
IPC分类号： G03C5/00
CPC分类号： G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.

4. 发明申请

US20070015084A1 Photoactive compounds 有权
标题翻译：光活性化合物
公开(公告)号：US20070015084A1
公开(公告)日：2007-01-18
申请号：US11355762
申请日：2006-02-16
申请人： M. Rahman , Francis Houlihan , Munirathna Padmanaban , SangHo Lee , Ralph Dammel , David Rentkiewicz , Clement Anyadiegwu
发明人： M. Rahman , Francis Houlihan , Munirathna Padmanaban , SangHo Lee , Ralph Dammel , David Rentkiewicz , Clement Anyadiegwu
IPC分类号： G03C1/00
CPC分类号： C07D333/46 , C07C25/18 , C07C309/05 , C07C309/17 , C07C381/12 , C07D333/76 , Y10S430/114
摘要： The present application relates to a compound of formula A-X-B, where (i) A-X-B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R500—SO3− or (ii) A-X-B form a non-ionic compound Ac-Xc-Bc, where Ai, Bi, Q, R500, Ac, Bc, and Xc are defined herein. The compounds are useful as photoactive materials.
摘要翻译：本申请涉及式A-X-B化合物，其中（i）A-X-B形成离子化合物艾希Bi，其中A 1和B 2各自为有机鎓阳离子; 和Xi是下式的阴离子：（ii）AXB形成非离子化合物Ac-Xc-Bc 其中Ai，Bi，Q，R 500，Ac，Bc和Xc在本文中定义。这些化合物可用作光敏材料。

5. 发明申请

US20060110677A1 Photoresist composition for deep UV and process thereof 失效
公开(公告)号：US20060110677A1
公开(公告)日：2006-05-25
申请号：US10994745
申请日：2004-11-22
申请人： Francis Houlihan , Ralph Dammel , Andrew Romano , Munirathna Padmanaban , M. Rahman
发明人： Francis Houlihan , Ralph Dammel , Andrew Romano , Munirathna Padmanaban , M. Rahman
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.

6. 发明申请

US20110086312A1 Positive-Working Photoimageable Bottom Antireflective Coating 审中-公开
标题翻译：正面照相底部防反射涂层
公开(公告)号：US20110086312A1
公开(公告)日：2011-04-14
申请号：US12576622
申请日：2009-10-09
申请人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
发明人： Ralph R. Dammel , Srinivasan Chakrapani , Munirathna Padmanaban , Shinji Miyazaki , Edward W. Ng , Takanori Kudo , Alberto D. Dioses , Francis M. Houlihan
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/091
摘要： The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n≧2. The invention further relates to a process for using such a composition.
摘要翻译：本发明涉及能够在含水碱性显影剂中显影的正底部可光成像抗反射涂料组合物，其中抗反射涂料组合物包含含有至少一个具有发色团的重复单元的聚合物和一个具有羟基的重复单元， /或羧基，结构式（7）的乙烯基醚封端的交联剂，以及任选的光酸产生剂和/或酸和/或热酸发生剂，其中结构（7）其中W选自（C1 -C 30）直链，支链或环状的烷基部分，取代或未取代的（C 3 -C 40）脂环烃部分和取代的或未取代的（C 3 -C 40）环烷基亚烷基部分; R选自C1-C10直链或支链亚烷基，n≥2。本发明还涉及使用这种组合物的方法。

7. 发明授权

US07122291B2 Photoresist compositions 有权
标题翻译：光刻胶组合物
公开(公告)号：US07122291B2
公开(公告)日：2006-10-17
申请号：US10909513
申请日：2004-08-02
申请人： Munirathna Padmanaban , Guanyang Lin , Takanori Kudo , Chi-Sun Hong , M. Dalil Rahman
发明人： Munirathna Padmanaban , Guanyang Lin , Takanori Kudo , Chi-Sun Hong , M. Dalil Rahman
IPC分类号： G03C1/73 , G03F7/39 , G03F7/20 , G03F7/30 , C08L37/00
CPC分类号： G03F7/0395 , Y10S430/111
摘要： The present invention provides for a photoresist composition comprising a mixture of two different copolymers.
摘要翻译：本发明提供包含两种不同共聚物的混合物的光致抗蚀剂组合物。

8. 发明申请

US20120122029A1 Underlayer Developable Coating Compositions and Processes Thereof 审中-公开
标题翻译：底层可开发的涂料组合物及其工艺
公开(公告)号：US20120122029A1
公开(公告)日：2012-05-17
申请号：US12944420
申请日：2010-11-11
申请人： Takanori Kudo , Alberto Dioses , Edward Ng , Srinivasan Chakrapani , Munirathna Padmanaban
发明人： Takanori Kudo , Alberto Dioses , Edward Ng , Srinivasan Chakrapani , Munirathna Padmanaban
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/091 , G03F7/095
摘要： The present invention relates to a photoimageable underlayer composition comprising a polymer, a crosslinker comprising a vinyl ether group, and a thermal acid generator comprising a salt of a mono or polycarboxylic acid and an amine, where the amine has a boiling point of at least 150° C. The invention also relates to a process for forming an image in the underlayer comprising the novel composition.
摘要翻译：本发明涉及一种可光成像底层组合物，其包含聚合物，包含乙烯基醚基团的交联剂和包含单羧酸和多元羧酸盐和胺的热酸产生剂，其中胺的沸点为至少150 本发明还涉及一种用于在包含新组合物的底层中形成图像的方法。

9. 发明授权

US07595141B2 Composition for coating over a photoresist pattern 有权
标题翻译：用于在光致抗蚀剂图案上涂覆的组合物
公开(公告)号：US07595141B2
公开(公告)日：2009-09-29
申请号：US10973633
申请日：2004-10-26
申请人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel
发明人： Takanori Kudo , Munirathna Padmanaban , Ralph R. Dammel
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/40
摘要： The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing amino group. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
摘要翻译：本发明涉及包含含有氨基的聚合物的光致抗蚀剂图案的水性涂料组合物。本发明还涉及一种用于制造微电子器件的方法，包括提供具有光致抗蚀剂图案的基底，用新颖的涂层材料涂覆光致抗蚀剂图案，使一部分涂料与光致抗蚀剂图案接触，并且将一部分不与去除溶液反应的涂料。

10. 发明申请

US20120308939A1 BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS AND PROCESSES THEREOF 有权
标题翻译：底部抗反射涂料组合物及其工艺
公开(公告)号：US20120308939A1
公开(公告)日：2012-12-06
申请号：US13153765
申请日：2011-06-06
申请人： Takanori Kudo , Alberto Dioses , Edward Ng , Srinivasan Chakrapani , Munirathna Padmanaban
发明人： Takanori Kudo , Alberto Dioses , Edward Ng , Srinivasan Chakrapani , Munirathna Padmanaban
IPC分类号： G03F7/20 , C08K5/42
CPC分类号： C09D5/006 , G03F7/091
摘要： The present invention relates to an antireflective coating composition comprising a crosslinking agent, a polymer comprising at least one chromophore group and at least one hydroxyl and/or a carboxyl group, and an additive, further where the additive has structure 1 and comprises at least one arylene-hydroxyl moiety, where Y is selected from an carboxylate anion or sulfonate anion, R1, R2, and R3 are independently selected from unsubstituted C1-C8 alkyl, substituted C1-C8 alkyl, aryl and arylene-hydroxyl; X1, X2, and X3 are independently selected from direct valence bond and C1-C8 alkylene group, and, n=1, 2 or 3. The invention further relates to a process for using the composition.
摘要翻译：本发明涉及包含交联剂，包含至少一个发色团和至少一个羟基和/或羧基的聚合物和添加剂的抗反射涂料组合物，此外，其中添加剂具有结构1并且包含至少一个亚芳基 - 羟基部分，其中Y选自羧酸根阴离子或磺酸根阴离子，R 1，R 2和R 3独立地选自未取代的C 1 -C 8烷基，取代的C 1 -C 8烷基，芳基和亚芳基 - 羟基; X1，X2和X3独立地选自直接键键和C1-C8亚烷基，n = 1,2或3.本发明还涉及使用该组合物的方法。

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