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1. 发明授权

US5192723A Method of phase transition, method for producing lead niobate-based complex oxide utilizing said phase transition method, and lead niobate-based complex oxide produced by said method 失效
标题翻译：相变方法，利用所述相变法生产铌酸铋基复合氧化物的方法，以及由所述方法生产的铌酸铅复合氧化物
公开(公告)号：US5192723A
公开(公告)日：1993-03-09
申请号：US754015
申请日：1991-09-03
申请人： Takamitsu Fujiu , Akira Tanaka , Kenichi Muramatsu , Tetsuo Hattori
发明人： Takamitsu Fujiu , Akira Tanaka , Kenichi Muramatsu , Tetsuo Hattori
IPC分类号： C04B35/499
CPC分类号： C04B35/499
摘要： A method for producing a lead niobate-based complex oxide with an elevated proportion of pervoskite phase and lead niobate-based complex oxide produced by such method enables manufacture of small actuator or capacitor with an elevated dielectric constant k. Treatment of a raw material represented by a general formula Pb(A.sub.1/3 Nb.sub.#)x(ZN.sub.1/3 Nb.sub.2/3) yO.sub.3 or Pb(Fe.sub.1/2 Nb.sub.1/2)x(Zn.sub.1/3 Nb.sub.2/3) yO.sub.3 (wherein A is Mg or Ni; x is an atomic ratio in a range of 0-1; and y is an atomic ratio in a range of 1-0, with a relation x+y=1) and containing pyrochlore phase, under a high temperature of 500.degree.-1300.degree. C. and a high pressure of 1000-4000 kg/cm.sup.2, causes transition of pyrochlore phase into perovskite phase, thereby increasing the proportion of perovskite phase. Also treatment of a raw material represented by a general formula uPb(.sub.1/3 Nb.sub.2/3)O.sub.3 -vPbTiO.sub.3 (wherein u is an atomic ratio in a range of 0.5-1; and v is an atomic ratio in a range of 0.5- 0, with a relation u+v=1) and containing pyrochlore phase, under a high temperature of 500.degree.-1300.degree. C. and a high pressure of 1000-4000 kg/cm.sup.2 causes transition of pyrochlore phase into perovskite phase, thereby increasing the proportion of pervoskite phase.
摘要翻译：通过这种方法生产的以铌酸酯相和以铌酸铅为主的复合氧化物的比例提高的生产铌酸铌基复合氧化物的方法使得能够制造具有升高的介电常数k的小型致动器或电容器。由通式Pb（A1 / 3Nb＃）x（ZN1 / 3Nb2 / 3）yO3或Pb（Fe1 / 2Nb1 / 2）x（Zn1 / 3Nb2 / 3）yO3表示的原料的处理（其中A是Mg或 Ni; x是0-1的范围内的原子比，Y是在1-0的范围内的原子比，x + y = 1），并且在500℃的高温下含有烧绿石相 -1300℃，高压1000-4000kg / cm2，引起烧绿石相转变为钙钛矿相，从而增加钙钛矿相的比例。还可以处理由通式uPb（1 / 3Nb2 / 3）O3-vPbTiO3（其中u是0.5-1的范围内的原子比）表示的原料，v是0.5-0的范围内的原子比，具有关系u + v = 1）并且含有烧绿石相，在500℃-1300℃的高温和1000-4000kg / cm2的高压下引起烧绿石相转变成钙钛矿相，从而增加渗透相的比例。

2. 发明授权

US5817255A Display and method for producing it 失效
标题翻译：显示及其制作方法
公开(公告)号：US5817255A
公开(公告)日：1998-10-06
申请号：US705525
申请日：1996-08-29
申请人： Akira Tanaka , Tetsuo Hattori , Motoyuki Toki
发明人： Akira Tanaka , Tetsuo Hattori , Motoyuki Toki
IPC分类号： G02F1/13 , C09K19/54 , G02F1/1333 , G02F1/135 , C09K19/52 , F21V9/00
CPC分类号： C09K19/54 , Y10T428/1005 , Y10T428/1055
摘要： A display has a liquid crystal composite layer interposed between a pair of substrates on which electrodes-are formed. The liquid crystal composite layer is comprised of a matrix and liquid crystal droplets dispersed therein. The matrix is composed of an inorganic oxide or its gel of the formula MOx (M: one or more metal elements selected from, La, Y, Ti, Zr, Hf, V, Nb, Ta, Al, Ga, Ge, Pb or Sb; x: half of the total valence number of the one or more metal elements), or a mixture thereof with an inorganic oxide or its gel of formula ABOx (A: one or more metal elements selected from alkaline earth metals, rare earth metals or Pb; B: one or more metal elements of transition metals; x: a number larger than 0 (zero) and not-larger than 3). A polymer soluble in polar solvent may be added to adjust the dielectric constant of the matrix.
摘要翻译：显示器具有插入在其上形成有电极的一对基板之间的液晶复合层。液晶复合层由分散在其中的基质和液晶微滴组成。该基质由式MO x（M：La，Y，Ti，Zr，Hf，V，Nb，Ta，Al，Ga，Ge，Pb中选出的一种或多种金属元素的无机氧化物或其凝胶组成） Sb; x：一种或多种金属元素的总价数的一半）或其与无机氧化物或其式ABO x的凝胶的混合物（A：一种或多种选自碱土金属，稀土金属的金属元素或Pb; B：过渡金属的一种或多种金属元素; x：大于0（零）且不大于3的数字。可以加入可溶于极性溶剂的聚合物以调节基质的介电常数。

3. 发明申请

US20220326632A1 TONER, DEVELOPING AGENT, TONER HOUSING UNIT, IMAGE FORMING APPARATUS, AND A METHOD OF FORMING IMAGES 有权
公开(公告)号：US20220326632A1
公开(公告)日：2022-10-13
申请号：US17657471
申请日：2022-03-31
申请人： Keiji MAKABE , Akira Tanaka , Hidekazu Kakinuma , Tsukiko Takahashi
发明人： Keiji MAKABE , Akira Tanaka , Hidekazu Kakinuma , Tsukiko Takahashi
IPC分类号： G03G9/097 , G03G15/08 , G03G9/08
摘要： [Object] An object of the invention is to provide a toner that can both achieve a higher level of low temperature fixability and suppression of the toner scattering.
[Means of Achieving the Object]
The disclosure is to provide a toner, including base-particles, and an external-additive, wherein a glass-transition temperature obtained from a DSC-curve at a second-warming of a THF-insoluble component is −50° C. or higher and 10° C. or lower, wherein an average circularity of the toner is 0.975 or more and 0.985 or lower, wherein the toner satisfies the following formula: 1.5≤Bt−0.025−Ct≤3.0, wherein the Bt [m2/g] is a BET-specific-surface area of the toner-particles, and the Ct [%] is a coverage by the external-additive, and, at least a portion of a surface of the external-additive is coated with either an oxide of a metallic element, a hydroxide of the metallic element, or both.

4. 发明授权

US10303072B2 Toner, developer, and image forming device 有权
公开(公告)号：US10303072B2
公开(公告)日：2019-05-28
申请号：US15889461
申请日：2018-02-06
申请人： Akira Tanaka , Hiroyuki Takeda , Junichi Awamura , Hiroshi Yamada , Daichi Hisakuni , Yasuo Kamada
发明人： Akira Tanaka , Hiroyuki Takeda , Junichi Awamura , Hiroshi Yamada , Daichi Hisakuni , Yasuo Kamada
IPC分类号： G03G9/087 , C08G63/42 , C08G63/20 , G03G15/00 , C08G63/195 , C08G63/16 , C08G63/66 , C08G18/75 , C08G18/42
摘要： A toner is provided. The toner contains a polyester resin. The toner has a glass transition temperature (Tg1st) at first temperature rising of differential scanning calorimetry (DSC) of from 45° C. to 65° C. The toner includes a component insoluble in tetrahydrofuran (THF) having two glass transition temperatures (Tga1st and Tgb1st) at the first temperature rising of DSC, where Tga1st is in a range of −45° C. to 5° C. and Tgb1st is in a range of 45° C. to 70° C. The toner includes a component soluble in THF having a glass transition temperature (Tg2nd) at second temperature rising of DSC of from 40° C. to 65° C.

5. 发明授权

US08686398B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08686398B2
公开(公告)日：2014-04-01
申请号：US13599852
申请日：2012-08-30
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要翻译：半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

6. 发明授权

US08570240B2 Communication sheet structure 有权
标题翻译：通讯单结构
公开(公告)号：US08570240B2
公开(公告)日：2013-10-29
申请号：US12996839
申请日：2008-06-27
申请人： Akira Tanaka , Machiko Oouchida , Hiroyuki Mori
发明人： Akira Tanaka , Machiko Oouchida , Hiroyuki Mori
IPC分类号： H01Q1/36
CPC分类号： H04B13/00
摘要： A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.
摘要翻译：用于传送电磁波，从而进行通信的通信片结构的特征在于，通信片结构包括平面基底材料，其相对介电常数在800MHz至10GHz的频率范围为1.0至15.0，一个基体材料的一侧包括导体A存在部分和不存在部分，并且基材的另一侧包括存在于其中90％以上的导体B. 通信片结构使得能够在二维方面进行通信，并且通信片结构在通信性能方面非常优异。

7. 发明申请

US20130228742A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20130228742A1
公开(公告)日：2013-09-05
申请号：US13599852
申请日：2012-08-30
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要翻译：半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

8. 发明授权

US08410473B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US08410473B2
公开(公告)日：2013-04-02
申请号：US13291176
申请日：2011-11-08
申请人： Akira Tanaka
发明人： Akira Tanaka
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/025 , H01L33/32 , H01S5/309 , H01S5/34333
摘要： A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.
摘要翻译：发光器件包括：由第一导电类型的半导体制成的第一层; 由第二导电类型的半导体制成的第二层; 包括设置在第一层和第二层之间的多量子阱的有源层，多量子阱的每个势垒层中的第一导电类型的杂质浓度具有大致平坦的分布或朝着第二层增加，杂质的平均值从多量子阱的各阱层观察的第二层侧的阻挡层的浓度等于或大于第一层侧的阻挡层中的杂质浓度的平均值，以及最靠近第二层的阻挡层高于最靠近第一层的势垒层中的杂质浓度的平均值。

9. 发明授权

US08035212B2 Semiconductor chip mounting body, method of manufacturing semiconductor chip mounting body and electronic device 有权
标题翻译：半导体芯片安装体，半导体芯片安装体和电子器件的制造方法
公开(公告)号：US08035212B2
公开(公告)日：2011-10-11
申请号：US12621387
申请日：2009-11-18
申请人： Akira Tanaka , Minoru Takizawa , Mitsuyoshi Tanimoto , Akihiko Happoya
发明人： Akira Tanaka , Minoru Takizawa , Mitsuyoshi Tanimoto , Akihiko Happoya
IPC分类号： H01L23/48
CPC分类号： H01L21/563 , H01L23/295 , H01L23/3121 , H01L24/743 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/10253 , H01L2924/351 , H01L2924/00 , H01L2224/0401
摘要： According to one embodiment, a semiconductor chip mounting body, with an enhanced shock-resistance at portions of the bonding member corresponding to the corners of a semiconductor chip, is provided. The semiconductor chip mounting body includes a circuit board having a circuit pattern formed on a mounting surface thereof, a semiconductor chip mounted on the circuit pattern of the circuit board, and a bonding member arranged at least between the circuit board and the semiconductor chip, and on the sides of the semiconductor chip to fix the semiconductor chip on the circuit board. The bonding member contains thermosetting resin and magnetic powder dispersed in the thermosetting resin. The magnetic powder is locally disposed in portions of the bonding member which is located the corners of the semiconductor chip.
摘要翻译：根据一个实施例，提供一种半导体芯片安装体，其在与半导体芯片的角部对应的接合部件的部分处具有增强的抗冲击性。半导体芯片安装体包括电路板，其电路图案形成在其安装表面上，安装在电路板的电路图案上的半导体芯片和至少布置在电路板和半导体芯片之间的接合部件，以及在半导体芯片的侧面上将半导体芯片固定在电路板上。接合部件包含分散在热固性树脂中的热固性树脂和磁性粉末。磁性粉末局部地设置在位于半导体芯片的角部的接合部件的部分中。

10. 发明授权

US08016184B2 Method for manufacturing electronic component module 有权
标题翻译：电子元件模块制造方法
公开(公告)号：US08016184B2
公开(公告)日：2011-09-13
申请号：US12887542
申请日：2010-09-22
申请人： Koichi Kanryo , Akio Katsube , Akira Tanaka
发明人： Koichi Kanryo , Akio Katsube , Akira Tanaka
IPC分类号： B23K31/02 , B05D5/12
CPC分类号： H05K1/0218 , H01L23/552 , H01L24/97 , H01L25/165 , H01L25/50 , H01L2224/16225 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/15159 , H01L2924/19105 , H05K3/0052 , H05K3/284 , H05K2201/098 , H05K2203/1316 , H01L2224/81
摘要： A method for manufacturing an electronic component module is performed such that a shield layer can be formed as a thin film and an electronic component can be effectively shielded. A collective substrate including a plurality of electronic component modules including a plurality of electronic components is batch-sealed with a resin. A cut section is formed from a top surface of the sealed resin to a position that reaches a grounding electrode arranged in the substrate at a boundary section of the electronic component module so as to expose the grounding electrode. A conductive paste is applied on side surfaces and the top surface. Then, a conductive thin film is formed by spin coating, and the electronic component module is cut.
摘要翻译：执行电子部件模块的制造方法，使得可以形成屏蔽层作为薄膜，并且可以有效地屏蔽电子部件。包括多个电子部件的多个电子部件模块的集合基板用树脂进行间歇式密封。切割部从密封树脂的顶表面形成到在电子部件模块的边界部分到达布置在基板中的接地电极的位置，以露出接地电极。在侧表面和顶表面上施加导电膏。然后，通过旋涂形成导电性薄膜，切断电子部件模块。

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