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1. 发明申请

US20100155740A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20100155740A1
公开(公告)日：2010-06-24
申请号：US12636961
申请日：2009-12-14
申请人： Takako CHINONE , Ji-Hao Liang , Yasuyuki Shibata , Jiro Higashino
发明人： Takako CHINONE , Ji-Hao Liang , Yasuyuki Shibata , Jiro Higashino
IPC分类号： H01L29/20 , H01L21/18
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L33/007 , H01L33/0079
摘要： A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.
摘要翻译：通过以不同的生长速率生长III族氮化物的第一和第二生长步骤的多个循环的交替方式，在生长衬底上形成具有多个空腔的含空腔层。随后在空腔含有层上形成半导体外延层，然后将支撑衬底接合到半导体外延层。生长衬底与含空腔层分离。

2. 发明申请

US20100148309A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100148309A1
公开(公告)日：2010-06-17
申请号：US12636934
申请日：2009-12-14
申请人： Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata , Jiro Higashino
发明人： Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata , Jiro Higashino
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02639 , H01L21/0242 , H01L21/02433 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/0265 , H01L33/007 , H01L33/0079
摘要： There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.
摘要翻译：提供一种制造半导体器件的方法，其中在生长衬底上形成用于部分覆盖生长衬底的选择性生长掩模; 在生长衬底上未被掩模覆盖的非掩模部分上形成比掩模厚的缓冲层，并且在缓冲层的表面上露出预定的刻面; 使用缓冲层作为起点横向生长半导体膜，并且形成用于覆盖掩模的横向生长层，同时在掩模的上部形成空腔; 并且在侧向生长层上外延生长器件功能层。空腔形成步骤包括以生长速率生长半导体膜的第一步骤和用于以与第一生长速率相互不同的另一生长速率生长另一半导体膜的第二步骤，其中第一和第二步骤执行多个时代以交替的方式。

3. 发明授权

US08236672B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08236672B2
公开(公告)日：2012-08-07
申请号：US12636961
申请日：2009-12-14
申请人： Takako Chinone , Ji-Hao Liang , Yasuyuki Shibata , Jiro Higashino
发明人： Takako Chinone , Ji-Hao Liang , Yasuyuki Shibata , Jiro Higashino
IPC分类号： H01L21/36 , H01L21/20 , H01L21/00 , H01L29/24 , H01L21/18 , H01L27/108
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02636 , H01L33/007 , H01L33/0079
摘要： A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.
摘要翻译：通过以不同的生长速率生长III族氮化物的第一和第二生长步骤的多个循环的交替方式，在生长衬底上形成具有多个空腔的含空腔层。随后在空腔含有层上形成半导体外延层，然后将支撑衬底接合到半导体外延层。生长衬底与含空腔层分离。

4. 发明授权

US08111350B2 Semiconductor light-emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08111350B2
公开(公告)日：2012-02-07
申请号：US13005710
申请日：2011-01-13
申请人： Jiro Higashino , Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata
发明人： Jiro Higashino , Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata
IPC分类号： G02F1/1335
CPC分类号： H01L33/007 , H01L33/20 , H01L33/22 , H01L33/32
摘要： A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.
摘要翻译：在具有刚玉结构的C面基板上形成多个突起。在基板的表面上形成由包含Ga和N的III-V族化合物半导体制成的基膜。基膜的表面比基材的表面更平坦。包含Ga和N的发光结构设置在基膜上。突起规则地布置在相对于基膜的a轴倾斜小于15度并且在与第一方向正交的第二方向上倾斜的第一方向上。每个突起具有相对于m轴倾斜小于15度的两个第一平行边和相对于a轴倾斜小于15度的两个第二平行边。两个第二侧之间的间隔比两个第一侧之间的间隔宽。

5. 发明授权

US08008170B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08008170B2
公开(公告)日：2011-08-30
申请号：US12636934
申请日：2009-12-14
申请人： Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata , Jiro Higashino
发明人： Ji-Hao Liang , Takako Chinone , Yasuyuki Shibata , Jiro Higashino
IPC分类号： H01L21/36 , H01L21/20 , H01L29/04 , H01L31/036 , H01L33/00
CPC分类号： H01L21/02639 , H01L21/0242 , H01L21/02433 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/0265 , H01L33/007 , H01L33/0079
摘要： There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.
摘要翻译：提供一种制造半导体器件的方法，其中在生长衬底上形成用于部分覆盖生长衬底的选择性生长掩模; 在生长衬底上未被掩模覆盖的非掩模部分上形成比掩模厚的缓冲层，并且在缓冲层的表面上露出预定的刻面; 使用缓冲层作为起点横向生长半导体膜，并且形成用于覆盖掩模的横向生长层，同时在掩模的上部形成空腔; 并且在侧向生长层上外延生长器件功能层。空腔形成步骤包括以生长速率生长半导体膜的第一步骤和用于以与第一生长速率相互不同的另一生长速率生长另一半导体膜的第二步骤，其中第一和第二步骤执行多个时代以交替的方式。

6. 发明授权

US08530256B2 Production process for semiconductor device 有权
标题翻译：半导体器件的生产工艺
公开(公告)号：US08530256B2
公开(公告)日：2013-09-10
申请号：US13416635
申请日：2012-03-09
申请人： Yasuyuki Shibata , Ji-Hao Liang , Takako Chinone
发明人： Yasuyuki Shibata , Ji-Hao Liang , Takako Chinone
IPC分类号： H01L21/205 , H01L33/32
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/0079
摘要： (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.
摘要翻译：（a）在生长衬底上形成由III族氮化物化合物半导体制成且含有空隙的含空隙层。（b）在含空隙层上形成由n型III族氮化物化合物半导体制成并用于封闭空隙的n型层。（c）在n型层上形成由III族氮化物化合物半导体制成的有源层。（d）在有源层上形成由p型III族氮化物半导体构成的p型层。（e）将支撑衬底粘合在p型层上。（f）在生成空隙的边界处剥离生长衬底。（g）平面化n型层。步骤（b）包括（b1）在水平生长相对较弱的条件下形成n型层的一部分，（b2）在水平生长相对较强的条件下形成n型层的剩余部分。

7. 发明授权

US08772808B2 Semiconductor light emitting element and manufacturing method thereof 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08772808B2
公开(公告)日：2014-07-08
申请号：US13426141
申请日：2012-03-21
申请人： Yasuyuki Shibata , Ji-Hao Liang , Jiro Higashino
发明人： Yasuyuki Shibata , Ji-Hao Liang , Jiro Higashino
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L33/0079 , H01L33/44
摘要： A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.
摘要翻译：半导体发光元件的制造方法，包括在半导体层叠体中在街道部分的宽度内形成牺牲部分，并进行湿蚀刻以与其相邻部分一起去除牺牲部分，从而去除街道中的蚀刻残留物。

8. 发明授权

US08664028B2 Semiconductor device production process 失效
标题翻译：半导体器件生产工艺
公开(公告)号：US08664028B2
公开(公告)日：2014-03-04
申请号：US13416344
申请日：2012-03-09
申请人： Yasuyuki Shibata , Ji-Hao Liang
发明人： Yasuyuki Shibata , Ji-Hao Liang
IPC分类号： H01L21/18 , H01L31/18
CPC分类号： H01L21/02664 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/0259 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/187 , H01L33/007 , H01L33/0079
摘要： (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.
摘要翻译：（a）在生长基板上形成由III族氮化物半导体构成且含有空隙的含空隙层。（b）在含空隙层上，形成由n型III族氮化物半导体构成并用于封闭空隙的n型层。（c）在n型层上形成由III族氮化物化合物半导体构成的有源层。（d）在有源层上形成由p型III族氮化物半导体构成的p型层。（e）在p型层上方结合有支撑基板。（f）生长衬底在产生空隙的边界处被剥离。在上述步骤（a）或（b）中，在空隙闭合之前，至少部分形成层的材料的供应在加热的同时减少。

9. 发明申请

US20120231568A1 SEMICONDUCTOR DEVICE PRODUCTION PROCESS 失效
标题翻译：半导体器件生产工艺
公开(公告)号：US20120231568A1
公开(公告)日：2012-09-13
申请号：US13416344
申请日：2012-03-09
申请人： Yasuyuki Shibata , Ji-Hao Liang
发明人： Yasuyuki Shibata , Ji-Hao Liang
IPC分类号： H01L33/06
CPC分类号： H01L21/02664 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/0259 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L21/187 , H01L33/007 , H01L33/0079
摘要： (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.
摘要翻译：（a）在生长基板上形成由III族氮化物半导体构成且含有空隙的含空隙层。（b）在含空隙层上，形成由n型III族氮化物半导体构成并用于封闭空隙的n型层。（c）在n型层上形成由III族氮化物化合物半导体构成的有源层。（d）在有源层上形成由p型III族氮化物半导体构成的p型层。（e）在p型层上方结合有支撑基板。（f）生长衬底在产生空隙的边界处被剥离。在上述步骤（a）或（b）中，在空隙闭合之前，至少部分形成层的材料的供应在加热的同时减少。

10. 发明申请

US20110271918A1 VARIABLE VALVE OPERATING APPARATUS FOR INTERNAL COMBUSTION ENGINE 有权
标题翻译：内燃机可变阀操作装置
公开(公告)号：US20110271918A1
公开(公告)日：2011-11-10
申请号：US13142664
申请日：2009-02-25
申请人： Takashi Nishikiori , Yasuyuki Shibata , Shinya Misaka
发明人： Takashi Nishikiori , Yasuyuki Shibata , Shinya Misaka
IPC分类号： F02D13/08
CPC分类号： F02D13/08 , B60K6/445 , F01L1/267 , F01L13/0036 , F01L2013/0052 , F01L2820/031 , F02D29/02 , F02D41/0002 , F02D41/20 , F02D2013/0292 , F02D2041/0265 , F02D2041/2024 , Y02T10/18 , Y02T10/6239 , Y10T74/2107
摘要： Provided is a variable valve operating apparatus for an internal combustion engine, which can favorably reduce electric power consumption in a vehicle system that may stop the internal combustion engine during power-up of the vehicle system.A changeover mechanism 90 is provided which is capable of switching between a connection state in which a first rocker arm 96 and a second rocker arm 98 are in connection with each other via a changeover pin 112, 118 and a disconnection state in which the connection is released. The changeover mechanism 90 performs energization of actuators 130 for each cylinder in a case in which fuel supply to the internal combustion engine 12 is stopped in response to an establishment of a predetermined stop condition. The above-described energization of the actuator 130 for each cylinder is stopped in a case in which a crankshaft 78 of the internal combustion engine 12 stops rotating during an energization time period of the actuator 130 and in which the crankshaft 78 is not driven by an external power.
摘要翻译：提供一种用于内燃机的可变气门操作装置，其能够有利地降低在车辆系统通电期间可能停止内燃机的车辆系统的电力消耗。提供了切换机构90，其能够经由切换销112,118在第一摇臂96和第二摇臂98彼此连接的连接状态之间切换，并且连接是断开状态释放在内燃机12的燃料供应停止响应于预定停止条件的建立的情况下，转换机构90对每个气缸执行致动器130的通电。在内燃机12的曲轴78在致动器130的通电时间段内停止旋转的情况下，每个气缸的致动器130的上述通电被停止，并且曲轴78不被驱动外部电源

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