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    • 7. 发明申请
    • SEMICONDUCTOR DEVICE AND POWER AMPLIFIER
    • 半导体器件和功率放大器
    • US20070222033A1
    • 2007-09-27
    • US11753319
    • 2007-05-24
    • Mitsuo AriieYasutaka Sugimoto
    • Mitsuo AriieYasutaka Sugimoto
    • H01L27/082
    • H03F3/189H01L27/0647
    • A semiconductor device 1 includes a plurality of amplifier circuits 2 connected in parallel between an input terminal RFin and an output terminal RFout. Each of the amplifier circuits 2 includes an HBT 3, an oscillation stabilizing circuit 4 connected between the input terminal RFin and a base B of the HBT 3, and a ballast resistor 5 connected between a bias terminal Bin and the base B of the HBT 3. The oscillation stabilizing circuit 4 includes a resistor 6 and a capacitor 7 connected in parallel. Thus, thermorunaway of the HBT 3 can be prevented using the ballast resistor 5, and the stability against oscillation can be improved using the oscillation stabilizing circuit 4 even at low frequencies.
    • 半导体器件1包括在输入端子RFin和输出端子RFout之间并联连接的多个放大器电路2。 每个放大器电路2包括HBT 3,连接在HBT 3的输入端RFin和基极B之间的振荡稳定电路4,以及连接在HBT 3的偏置端子箱和基座B之间的镇流电阻器5 振荡稳定电路4包括并联连接的电阻器6和电容器7。 因此,可以使用镇流电阻器5来防止HBT 3的热断路,即使在低频下也可以使用振荡稳定电路4来提高耐振动的稳定性。
    • 8. 发明授权
    • Process for the production of low-temperature firing ceramic compositions
    • 生产低温焙烧陶瓷组合物的方法
    • US06270716B1
    • 2001-08-07
    • US09451736
    • 1999-11-30
    • Yasutaka Sugimoto
    • Yasutaka Sugimoto
    • C04B3332
    • C04B35/462C04B35/4686
    • A process for the production of dielectric porcelain composition includes: a first step of admixing Bi2O3 and CuO with a BaO—TiO2—ReO{fraction (3/2)} main material, wherein Re is a lanthanoid element, to give a material mixture; a second step of calcining the material mixture at a temperature of 950° C. or higher; a third step of milling the calcined material mixture to a mean particle diameter of about 2.0 &mgr;m or less; a fourth step of admixing a B2O3—SiO2 glass component and CuO with the milled material mixture to give a material for a dielectric porcelain composition; and a fifth step of forming the material into a target shape and firing the shaped material at a temperature of 1000° C. or lower. The obtained dielectric porcelain composition is sinterable at low temperatures and has a high specific dielectric constant and Q-value and a satisfactory thermostability.
    • 制备电介质瓷组合物的方法包括:将Bi 2 O 3和CuO与BaO-TiO 2 -ReO(级分(3/2)}主要材料混合的第一步骤,其中Re是镧系元素,得到材料混合物; 在950℃以上的温度下煅烧材料混合物的第二步骤; 将煅烧材料混合物研磨至平均粒径为约2.0μm或更小的第三步骤; 将B2O3-SiO2玻璃组分和CuO与研磨的材料混合物混合以得到电介质瓷组合物的材料的第四步骤; 以及将材料形成为目标形状并在1000℃以下的温度下烧成成形材料的第五工序。 所获得的电介质瓷组合物在低温下是可烧结的并且具有高比介电常数和Q值以及令人满意的热稳定性。