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    • 1. 发明申请
    • Variable gain amplifier
    • 可变增益放大器
    • US20070132512A1
    • 2007-06-14
    • US11604829
    • 2006-11-28
    • Takahito MiyazakiIwao Kojima
    • Takahito MiyazakiIwao Kojima
    • H03G3/00
    • H03F1/56H03F3/19H03F2200/108H03F2200/381H03F2200/387H03F2200/451H03F2200/75
    • A variable gain amplifier is provided that scarcely suffers disturbance or interference such as carrier leak from other circuit blocks even when a plurality of circuits are constructed on the same semiconductor substrate, and that has low output impedance fluctuation. For the purpose of this, in a variable gain amplifier, the ground terminal of a signal amplifying transistor is connected to a dedicated grounding pad to which the other circuit blocks are not connected, so that disturbance or interference such as carrier leak from other circuit blocks is reduced. Further, the ground terminal of an output impedance compensation circuit is also connected to the same grounding pad described above, so that further disturbance or interference is avoided. As a result, the circuit scarcely suffers disturbance or interference such as carrier leak from other circuit blocks, so that output impedance fluctuation is reduced.
    • 即使在同一半导体基板上构成多个电路,也具有低的输出阻抗波动,提供了可变增益放大器,其几乎不受其它电路块的载波泄漏等干扰或干扰。 为此,在可变增益放大器中,信号放大晶体管的接地端子连接到不连接其它电路块的专用接地焊盘,使得诸如载波的干扰或干扰从其他电路块泄漏 降低了。 此外,输出阻抗补偿电路的接地端子也连接到上述相同的接地焊盘,从而避免了进一步的干扰或干扰。 结果,该电路几乎不受诸如来自其他电路块的载流子泄漏的干扰或干扰,使得输出阻抗波动减小。
    • 4. 发明申请
    • Semiconductor device having electrostatic breakdown protection element
    • 具有静电击穿保护元件的半导体器件
    • US20070120244A1
    • 2007-05-31
    • US10580814
    • 2004-11-29
    • Iwao KojimaToshihiro ShogakiOsamu Ishikawa
    • Iwao KojimaToshihiro ShogakiOsamu Ishikawa
    • H01L23/52
    • H01L23/60H01L2224/16H01L2924/00011H01L2924/00014H01L2924/01004H01L2924/15192H01L2924/3011H01L2224/0401
    • A semiconductor device (1) comprises a semiconductor substrate (2) on which an integrated circuit (3, 4) is formed, a first ground terminal (7) and a second ground terminal (8) for electrically connecting the integrated circuit (3, 4) to an external ground electrode, and an electrostatic breakdown protection element (5) for electrically connecting the first ground terminal (7) with the second ground terminal (8). The first ground terminal (7) is electrically connected with the semiconductor substrate (2), while the second ground terminal (8) is not electrically connected with the semiconductor substrate (2). A semiconductor device comprises a semiconductor substrate on which an integrated circuit is formed, a first ground terminal and a second ground terminal for electrically connecting the integrated circuit to an external ground electrode, and an electrostatic breakdown protection element for electrically connecting the first ground terminal with the second ground terminal. The first ground terminal is electrically connected with the semiconductor substrate, while the second ground terminal is not electrically connected with the semiconductor substrate.
    • 半导体器件(1)包括其上形成有集成电路(3,4)的半导体衬底(2),用于将集成电路(3,4)电连接的第一接地端子(7)和第二接地端子(8) 4)连接到外部接地电极和用于将第一接地端子(7)与第二接地端子(8)电连接的静电击穿保护元件(5)。 第一接地端子(7)与半导体衬底(2)电连接,而第二接地端子(8)不与半导体衬底(2)电连接。 半导体器件包括其上形成有集成电路的半导体衬底,用于将集成电路电连接到外部接地电极的第一接地端子和第二接地端子,以及用于将第一接地端子与 第二个接地终端。 第一接地端子与半导体衬底电连接,而第二接地端子不与半导体衬底电连接。
    • 9. 发明申请
    • Variable attenuator
    • 可变衰减器
    • US20070139119A1
    • 2007-06-21
    • US10583898
    • 2004-12-07
    • Iwao Kojima
    • Iwao Kojima
    • H03G3/00
    • H03H11/245H03G1/007
    • A variable attenuator which can sequentially control attenuation effectively and has a small variation in manufacturing, is provided. The variable attenuator has a first signal input terminal; a first signal output terminal; a first control terminal receiving a control voltage; an analog/digital converter converting the control voltage to M (M is a positive integer of 2 or more) control signals; and N (N is a positive integer satisfying N≧M) variable impedance elements which are connected in parallel and/or in series between the first signal input terminal and the first signal output terminal, and each impedance of which is varied by either one of the control signals.
    • 提供了可以有效地依次控制衰减并且具有小的制造变化的可变衰减器。 可变衰减器具有第一信号输入端; 第一信号输出端; 接收控制电压的第一控制终端; 将控制电压转换为M(M为2以上的正整数)的模拟/数字转换器; 和N(N是满足N> = M的正整数)可变阻抗元件,其在第一信号输入端子和第一信号输出端子之间并联和/或串联连接,并且其阻抗各自变化 的控制信号。