会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明申请
    • Photoresist stripping solution
    • 光阻剥离溶液
    • US20070078072A1
    • 2007-04-05
    • US11431750
    • 2006-05-11
    • Shigeru YokoiAtsushi Yamanouchi
    • Shigeru YokoiAtsushi Yamanouchi
    • C11D7/32
    • C11D11/0047C11D7/06C11D7/261C11D7/263C11D7/34C11D7/5004
    • Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.
    • 公开了一种基本上由(a)季铵氢氧化物(例如四甲基氢氧化铵),(b)至少一种选自二醇和二醇醚的水溶性有机溶剂(例如丙二醇,乙二醇,二乙烯)的光致抗蚀剂剥离溶液 乙二醇单丁醚)和(c)非胺水溶性有机溶剂(例如二甲基亚砜,N-甲基-2-吡咯烷酮)。 本发明的光致抗蚀剂剥离溶液具有优异的光致抗蚀剂剥离性,不会对生产液晶面板使用的丙烯酸类透明膜造成溶胀/着色的损伤,并且不会对电极材料造成损害。 特别是具有良好的光致抗蚀剂剥离性,即使在半导体芯片封装(特别是晶片级芯片尺寸封装,W-CSP)的生产中使用的厚膜负性光致抗蚀剂(感光性干膜)也能够除去,不会对铜造成损害 。
    • 10. 发明授权
    • Photoresist stripping solution
    • 光阻剥离溶液
    • US08114825B2
    • 2012-02-14
    • US12585973
    • 2009-09-30
    • Shigeru YokoiAtsushi Yamanouchi
    • Shigeru YokoiAtsushi Yamanouchi
    • C11D7/50
    • C11D11/0047C11D7/06C11D7/261C11D7/263C11D7/34C11D7/5004
    • Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.
    • 公开了一种基本上由(a)季铵氢氧化物(例如四甲基氢氧化铵),(b)至少一种选自二醇和二醇醚的水溶性有机溶剂(例如丙二醇,乙二醇,二乙烯)的光致抗蚀剂剥离溶液 乙二醇单丁醚)和(c)非胺水溶性有机溶剂(例如二甲基亚砜,N-甲基-2-吡咯烷酮)。 本发明的光致抗蚀剂剥离溶液具有优异的光致抗蚀剂剥离性,不会对生产液晶面板使用的丙烯酸类透明膜造成溶胀/着色的损伤,并且不会对电极材料造成损害。 特别是具有良好的光致抗蚀剂剥离性,即使在半导体芯片封装(特别是晶片级芯片尺寸封装,W-CSP)的生产中使用的厚膜负性光致抗蚀剂(感光性干膜)也能够除去,不会对铜造成损害 。