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    • 3. 发明授权
    • Semiconductor module
    • 半导体模块
    • US08884634B2
    • 2014-11-11
    • US13429762
    • 2012-03-26
    • Kenji HirohataMinoru MukaiTomoko Monda
    • Kenji HirohataMinoru MukaiTomoko Monda
    • G01R27/26
    • G01R27/16H01L23/64H01L2924/0002H01L2924/00
    • According to one embodiment, a semiconductor module comprises a substrate, a first wiring, an electrode pad, a junction, an oscillator, and a detector. The first wiring is disposed on the substrate, and has a characteristic impedance Z0. The electrode pad is connected to the first wiring. The junction is disposed on the electrode pad, and has an impedance Z1. The oscillator is disposed in contact with the first wiring, and oscillates a pulse wave of a voltage toward the junction via the first wiring. The detector is disposed in contact with the first wiring, and detects an output wave of the pulse wave from the junction. The characteristic impedance Z0 and the impedance Z1 satisfy a following relationship (1),  Z ⁢ ⁢ 0 - Z ⁢ ⁢ 1 Z ⁢ ⁢ 0  ≤ 0.05 . ( 1 )
    • 根据一个实施例,半导体模块包括衬底,第一布线,电极焊盘,结,振荡器和检测器。 第一布线设置在基板上,并具有特性阻抗Z0。 电极焊盘连接到第一布线。 接点设置在电极焊盘上,并具有阻抗Z1。 振荡器设置成与第一布线接触,并且经由第一布线使得电压脉冲波朝向结。 检测器设置成与第一布线接触,并检测来自结的脉冲波的输出波。 特征阻抗Z0和阻抗Z1满足以下关系式(1),Z⁢0 -Z⁢1 Z⁢0≤0.05。 (1)
    • 4. 发明授权
    • Storage device and method for controlling storage device
    • 用于控制存储设备的存储设备和方法
    • US08482998B2
    • 2013-07-09
    • US13446034
    • 2012-04-13
    • Minoru MukaiKenji HirohataTomoko Monda
    • Minoru MukaiKenji HirohataTomoko Monda
    • G11C7/00
    • H05K3/341H05K3/3436H05K2201/10151H05K2201/10159H05K2203/163Y02P70/613
    • A storage device includes: a printed circuit board; a semiconductor memory package mounted on the printed circuit board via solder joints, the semiconductor memory package incorporating semiconductor memories; a sensor configured to measure a physical quantity relating to a state of the storage device; a database including a damage estimation model base to be used for estimating damage of the solder joints from the physical quantity measured by the sensor; a damage estimating module configured to calculate a damage estimation value of the solder joints from the physical quantity using the damage estimation model base; and a controller configured to control writing, reading, and erasure of electronic data to or from the semiconductor memories based on the damage estimation values calculated by the damage estimating module.
    • 存储装置包括:印刷电路板; 半导体存储器封装,其通过焊点安装在所述印刷电路板上,所述半导体存储器封装结合有半导体存储器; 被配置为测量与所述存储装置的状态有关的物理量的传感器; 数据库,包括用于从传感器测量的物理量估计焊点的损坏的损伤估计模型库; 损伤估计模块,被配置为使用所述损伤估计模型基础从所述物理量计算所述焊点的损伤估计值; 以及控制器,其被配置为基于由所述损伤估计模块计算出的损伤估计值来控制对所述半导体存储器的电子数据的写入,读取和擦除。
    • 5. 发明申请
    • SEMICONDUCTOR MODULE
    • 半导体模块
    • US20120248440A1
    • 2012-10-04
    • US13429762
    • 2012-03-26
    • Kenji HIROHATAMinoru MukaiTomoko Monda
    • Kenji HIROHATAMinoru MukaiTomoko Monda
    • H01L23/64
    • G01R27/16H01L23/64H01L2924/0002H01L2924/00
    • According to one embodiment, a semiconductor module comprises a substrate, a first wiring, an electrode pad, a junction, an oscillator, and a detector. The first wiring is disposed on the substrate, and has a characteristic impedance Z0. The electrode pad is connected to the first wiring. The junction is disposed on the electrode pad, and has an impedance Z1. The oscillator is disposed in contact with the first wiring, and oscillates a pulse wave of a voltage toward the junction via the first wiring. The detector is disposed in contact with the first wiring, and detects an output wave of the pulse wave from the junction. The characteristic impedance Z0 and the impedance Z1 satisfy a following relationship (1),  Z   0 - Z   1 Z   0  ≤ 0.05 . ( 1 )
    • 根据一个实施例,半导体模块包括衬底,第一布线,电极焊盘,结,振荡器和检测器。 第一布线设置在基板上,并具有特性阻抗Z0。 电极焊盘连接到第一布线。 接点设置在电极焊盘上,并具有阻抗Z1。 振荡器设置成与第一布线接触,并且经由第一布线使得电压脉冲波朝向结。 检测器设置成与第一布线接触,并检测来自结的脉冲波的输出波。 特征阻抗Z0和阻抗Z1满足以下关系式(1),0。。 (1)
    • 6. 发明授权
    • Storage device and method for controlling storage device
    • 用于控制存储设备的存储设备和方法
    • US08189412B2
    • 2012-05-29
    • US12509555
    • 2009-07-27
    • Minoru MukaiKenji HirohataTomoko Monda
    • Minoru MukaiKenji HirohataTomoko Monda
    • G11C29/00
    • H05K3/341H05K3/3436H05K2201/10151H05K2201/10159H05K2203/163Y02P70/613
    • A storage device includes: a printed circuit board; a semiconductor memory package mounted on the printed circuit board via solder joints, the semiconductor memory package incorporating semiconductor memories; a sensor configured to measure a physical quantity relating to a state of the storage device; a database including a damage estimation model base to be used for estimating damage of the solder joints from the physical quantity measured by the sensor; a damage estimating module configured to calculate a damage estimation value of the solder joints from the physical quantity using the damage estimation model base; and a controller configured to control writing, reading, and erasure of electronic data to or from the semiconductor memories based on the damage estimation values calculated by the damage estimating module.
    • 存储装置包括:印刷电路板; 半导体存储器封装,其通过焊点安装在所述印刷电路板上,所述半导体存储器封装结合有半导体存储器; 被配置为测量与所述存储装置的状态有关的物理量的传感器; 数据库,包括用于从传感器测量的物理量估计焊点的损坏的损伤估计模型库; 损伤估计模块,被配置为使用所述损伤估计模型基础从所述物理量计算所述焊点的损伤估计值; 以及控制器,其被配置为基于由所述损伤估计模块计算出的损伤估计值来控制对所述半导体存储器的电子数据的写入,读取和擦除。
    • 7. 发明申请
    • STORAGE DEVICE AND METHOD FOR CONTROLLING STORAGE DEVICE
    • 存储装置和用于控制存储装置的方法
    • US20100082913A1
    • 2010-04-01
    • US12509555
    • 2009-07-27
    • Minoru MukaiKenji HirohataTomoko Monda
    • Minoru MukaiKenji HirohataTomoko Monda
    • G06F12/00G06F19/00
    • H05K3/341H05K3/3436H05K2201/10151H05K2201/10159H05K2203/163Y02P70/613
    • A storage device includes: a printed circuit board; a semiconductor memory package mounted on the printed circuit board via solder joints, the semiconductor memory package incorporating semiconductor memories; a sensor configured to measure a physical quantity relating to a state of the storage device; a database including a damage estimation model base to be used for estimating damage of the solder joints from the physical quantity measured by the sensor; a damage estimating module configured to calculate a damage estimation value of the solder joints from the physical quantity using the damage estimation model base; and a controller configured to control writing, reading, and erasure of electronic data to or from the semiconductor memories based on the damage estimation values calculated by the damage estimating module.
    • 存储装置包括:印刷电路板; 半导体存储器封装,其通过焊点安装在所述印刷电路板上,所述半导体存储器封装结合有半导体存储器; 被配置为测量与所述存储装置的状态有关的物理量的传感器; 数据库,包括用于从传感器测量的物理量估计焊点的损坏的损伤估计模型库; 损伤估计模块,被配置为使用所述损伤估计模型基础从所述物理量计算所述焊点的损伤估计值; 以及控制器,其被配置为基于由所述损伤估计模块计算出的损伤估计值来控制对所述半导体存储器的电子数据的写入,读取和擦除。
    • 9. 发明申请
    • STORAGE DEVICE AND METHOD FOR CONTROLLING STORAGE DEVICE
    • 存储装置和用于控制存储装置的方法
    • US20120198293A1
    • 2012-08-02
    • US13446034
    • 2012-04-13
    • Minoru MukaiKenji HirohataTomoko Monda
    • Minoru MukaiKenji HirohataTomoko Monda
    • G11C29/08G06F11/26
    • H05K3/341H05K3/3436H05K2201/10151H05K2201/10159H05K2203/163Y02P70/613
    • A storage device includes: a printed circuit board; a semiconductor memory package mounted on the printed circuit board via solder joints, the semiconductor memory package incorporating semiconductor memories; a sensor configured to measure a physical quantity relating to a state of the storage device; a database including a damage estimation model base to be used for estimating damage of the solder joints from the physical quantity measured by the sensor; a damage estimating module configured to calculate a damage estimation value of the solder joints from the physical quantity using the damage estimation model base; and a controller configured to control writing, reading, and erasure of electronic data to or from the semiconductor memories based on the damage estimation values calculated by the damage estimating module.
    • 存储装置包括:印刷电路板; 半导体存储器封装,其通过焊点安装在所述印刷电路板上,所述半导体存储器封装结合有半导体存储器; 被配置为测量与所述存储装置的状态有关的物理量的传感器; 数据库,包括用于从传感器测量的物理量估计焊点的损坏的损伤估计模型库; 损伤估计模块,被配置为使用所述损伤估计模型基础从所述物理量计算所述焊点的损伤估计值; 以及控制器,其被配置为基于由所述损伤估计模块计算出的损伤估计值来控制对所述半导体存储器的电子数据的写入,读取和擦除。