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    • 5. 发明授权
    • Claw pole type motor and pump
    • 爪式电机和泵
    • US07839046B2
    • 2010-11-23
    • US12232556
    • 2008-09-19
    • Toshiharu HashimotoHiroki InoueHidekazu YabuuchiMasaaki NishikataShinji Suematsu
    • Toshiharu HashimotoHiroki InoueHidekazu YabuuchiMasaaki NishikataShinji Suematsu
    • H02K1/12H02K1/14
    • H02K5/128H02K1/145H02K7/14H02K11/33H02K15/12H02K21/145H02K2211/03
    • A claw pole type motor includes a rotor having a magnet arranged on an outer circumferential surface thereof and a stator including an annular iron core and an annular coil received within the iron core. The iron core includes a yoke portion opened in an inner circumferential surface opposite to the rotor, a plurality of upper claw-shaped magnetic poles and a plurality of lower claw-shaped magnetic poles which are arranged along an inner circumferential surface of the annular coil. The upper/lower claw-shaped magnetic poles are curved to extend axially downwardly/upwardly from an upper/lower inner edge of the yoke portion, respectively. The upper and the low claw-shaped magnetic poles are alternately arranged along a circumferential direction of the iron core. The yoke portion has cutout portions formed in non-magnetic path regions which do not include magnetic paths through which magnetic flux flows between neighboring claw-shaped magnetic poles across the annular coil.
    • 爪极式电动机包括具有布置在其外圆周表面上的磁体的转子和包括环形铁芯的定子和容纳在铁芯内的环形线圈。 铁芯包括在与转子相对的内周面开口的轭部,沿着环形线圈的内周面配置的多个上爪状磁极和多个下爪形磁极。 上/下爪形磁极是弯曲的,分别从轭部的上/下内边缘向下/向上延伸。 上下爪形磁极沿着铁芯的圆周方向交替布置。 轭部具有形成在非磁路区域中的切口部分,其不包括通过环形线圈的相邻爪形磁极之间流过磁通的磁路。
    • 8. 发明申请
    • Information Management Apparatus and Storage Medium Storing Information Management Program
    • 信息管理设备和存储介质存储信息管理程序
    • US20140118278A1
    • 2014-05-01
    • US14063089
    • 2013-10-25
    • Hiroki Inoue
    • Hiroki Inoue
    • G06F3/0488
    • G06F3/04883G06F3/03545G06F3/041
    • An information management apparatus includes a processor, and a memory configured to store computer-readable instructions. The instructions instruct the information management apparatus to execute steps including acquiring stroke data of a trajectory of an approaching writing device detected by a detection portion capable of detecting the trajectory and including data of the trajectory of the writing device corresponding to schedule information written on a paper medium, generating image data of the trajectory based on the acquired stroke data, generating text data based on the acquired stroke data, and registering and managing the schedule information identified from the text data and the image data.
    • 信息管理装置包括处理器和被配置为存储计算机可读指令的存储器。 所述指示指示所述信息管理装置执行包括获取能够检测所述轨迹的检测部检测到的接近写入装置的轨迹的笔迹数据的步骤,并且包括与写在纸张上的时间表信息对应的写入装置的轨迹的数据 基于所获取的笔画数据生成轨迹的图像数据,基于所获取的笔画数据生成文本数据,以及登记和管理从文本数据和图像数据识别的日程信息。
    • 10. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08563973B2
    • 2013-10-22
    • US13041581
    • 2011-03-07
    • Hiroki InoueTakanori MatsuzakiShuhei Nagatsuka
    • Hiroki InoueTakanori MatsuzakiShuhei Nagatsuka
    • H01L29/786
    • H01L27/11521G11C16/0408H01L27/11551H01L27/1156H01L27/1207H01L27/1225H01L28/60
    • A semiconductor device including a nonvolatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that a predetermined amount of charge is held at the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.
    • 提供一种半导体器件,其包括包括具有氧化物半导体的写入晶体管的非易失性存储单元,包括与写入晶体管不同的半导体材料的读取晶体管和电容器。 通过接通写入晶体管并将电位提供给写入晶体管的源极(或电极),电容器的一个电极和读取晶体管的栅电极的节点,将数据写入存储单元 彼此电连接,然后关闭写入晶体管,使得在节点处保持预定量的电荷。 此外,当使用p沟道晶体管作为读取晶体管时,读取电位为正电位。