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1. 发明申请

US20100183827A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20100183827A1
公开(公告)日：2010-07-22
申请号：US12663764
申请日：2008-06-11
申请人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
发明人： Masaki Hirayama , Tadahiro Ohmi , Takahiro Horiguchi
IPC分类号： H05H1/46 , C23C16/511
CPC分类号： C23C16/511 , B05C13/00 , H01J37/32192 , H01J37/32266 , H05H1/46
摘要： A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus 1 includes a metal processing chamber 4 configured to accommodate therein a substrate G to be plasma-processed; an electromagnetic wave source 34 that supplies an electromagnetic wave necessary to excite plasma in the processing chamber 4; one or more dielectric members 25 provided on a bottom surface of a cover 3 of the processing chamber 4 and configured to transmit the electromagnetic wave supplied from the electromagnetic wave source 34 into the inside of the processing chamber 4, a portion of each dielectric member 25 being exposed to the inside of the processing chamber 4; and a surface wave propagating section 51 installed adjacent to the dielectric member 25 and configured to propagate the electromagnetic wave along a metal surface exposed to the inside of the processing chamber 4.
摘要翻译：提供能够减少电介质部件的使用量的等离子体处理装置。等离子体处理装置1包括金属处理室4，其配置为在其中容纳待等离子体处理的基板G; 提供在处理室4中激发等离子体所需的电磁波的电磁波源34; 设置在处理室4的盖3的底面上的一个或多个电介质构件25，用于将从电磁波源34提供的电磁波传送到处理室4的内部，每个电介质构件25的一部分暴露于处理室4的内部; 以及表面波传播部分51，其安装在电介质部件25附近，并被构造成沿着暴露于处理室4的内部的金属表面传播电磁波。

2. 发明申请

US20070221623A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20070221623A1
公开(公告)日：2007-09-27
申请号：US11689180
申请日：2007-03-21
申请人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
发明人： Takahiro HORIGUCHI , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B44C1/22 , C23C16/00 , C23F1/00 , H05H1/24
CPC分类号： H01J37/32568 , C23C16/45572 , C23C16/45574 , C23C16/511 , H01J37/32192 , H01J37/32211
摘要： There is provided a plasma processing apparatus in which a microwave is propagated into a dielectric body disposed at a top surface of a process chamber through a plurality of slots formed in a bottom face of a rectangular waveguide to excite a predetermined gas supplied into the process chamber into plasma by electric field energy of an electromagnetic field formed on a surface of the dielectric body, to thereby generate plasma with which a substrate is processed, wherein a top face member of the rectangular waveguide is formed of a conductive, nonmagnetic material and is disposed so as to be movable up and down relative to the bottom face of the rectangular waveguide. To change a wavelength in the rectangular waveguide, the top face member of the rectangular waveguide is moved up and down relative to the bottom face of the rectangular waveguide according to conditions of the plasma processing performed in the process chamber, such as gas species, pressure, and a power of the microwave of a microwave supplier.
摘要翻译：提供了一种等离子体处理装置，其中微波通过形成在矩形波导的底面中的多个槽传播到设置在处理室的顶表面处的电介质体中，以激发供应到处理室中的预定气体通过形成在电介质体的表面上的电磁场的电场能进入等离子体，从而产生用于处理基板的等离子体，其中矩形波导的顶面部件由导电非磁性材料形成，以相对于矩形波导的底面上下移动。为了改变矩形波导中的波长，根据处理室中进行的等离子体处理（例如气体种类，压力）的条件，矩形波导的顶面构件相对于矩形波导的底面上下移动，微波炉微波炉的功率。

3. 发明授权

US07723637B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US07723637B2
公开(公告)日：2010-05-25
申请号：US11592253
申请日：2006-11-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32229
摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.
摘要翻译：本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导管24被引入微波波导10中。室21中的等离子体22由微波25.微波25中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

4. 发明授权

US07432468B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07432468B2
公开(公告)日：2008-10-07
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

5. 发明申请

US20070235425A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070235425A1
公开(公告)日：2007-10-11
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

6. 发明申请

US20070181531A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070181531A1
公开(公告)日：2007-08-09
申请号：US11671787
申请日：2007-02-06
申请人： Takahiro Horiguchi , Tadahiro Ohmi , Masaki Hirayama
发明人： Takahiro Horiguchi , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： C23F1/00 , H01L21/306 , H01L21/302 , H01L21/461 , B44C1/22
CPC分类号： C23C16/24 , C23C16/45568 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J37/3244
摘要： A microwave plasma processing apparatus 100 includes a plurality of dielectric parts 31, through which microwaves are transmitted via a slot, and gas nozzles 27 disposed at positions lower than the dielectric parts 31. The dielectric parts 31 and the gas nozzles 27 are each constituted with a porous portion and a dense portion. A first gas supply unit supplies argon gas into a processing chamber through porous portions 31P at the individual dielectric parts 31. A second gas supply unit supplies silane gas and hydrogen gas into the processing chamber through porous portions 27P at the gas nozzles 27. The gases decelerate as they travel through the porous portions and, as a result, excessive agitation in the gases can be inhibited. Consequently, uniform plasma is generated and a high quality amorphous silicon film can be formed with the plasma.
摘要翻译：微波等离子体处理装置100包括多个电介质部31，微波经由狭槽传播，并且设置在低于介质部31的位置的气体喷嘴27。电介质部31和气体喷嘴27分别由多孔部和致密部构成。第一气体供给单元通过各个电介质部31的多孔部31 P将氩气供给到处理室。第二气体供给单元通过气体喷嘴27处的多孔部分27 P向处理室供给硅烷气体和氢气。气体在穿过多孔部分时减速，结果可以抑制气体中的过度搅动。因此，产生均匀的等离子体，并且可以用等离子体形成高品质的非晶硅膜。

7. 发明申请

US20070054064A1 Microwave plasma processing method, microwave plasma processing apparatus, and its plasma head 审中-公开
标题翻译：微波等离子体处理方法，微波等离子体处理装置及其等离子体头
公开(公告)号：US20070054064A1
公开(公告)日：2007-03-08
申请号：US10566241
申请日：2004-12-24
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/306 , H05H1/46 , H05H2001/4622 , H05H2001/463
摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).
摘要翻译：微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时物体相对于线性等离子体保持在水平位置。等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

8. 发明申请

US20070102403A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20070102403A1
公开(公告)日：2007-05-10
申请号：US11592253
申请日：2006-11-03
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32229
摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.
摘要翻译：本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导24被引入到微波波导10中。并且通过微波25产生室21中的等离子体22。如微波波导10中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

9. 发明授权

US09105450B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09105450B2
公开(公告)日：2015-08-11
申请号：US13145398
申请日：2009-11-02
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/32238 , H05H1/46 , H05H2001/4622
摘要： A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
摘要翻译：微波等离子体处理装置包括：处理容器，其中气体被微波激发，基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板，其布置在处理容器的内表面上，并将微波放射到处理容器中; 多个第一同轴波导，与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。同轴波导分配器包括第二同轴波导，其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。

10. 发明授权

US08114245B2 Plasma etching device 失效
标题翻译：等离子体蚀刻装置
公开(公告)号：US08114245B2
公开(公告)日：2012-02-14
申请号：US10304869
申请日：2002-11-26
申请人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
发明人： Tadahiro Ohmi , Masaki Hirayama , Haruyuki Takano , Yusuke Hirayama
IPC分类号： C23F1/00 , H01L21/306 , C23C16/509 , C23C16/52 , C23C16/505 , C23C16/22 , C23C16/06
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/3266
摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.
摘要翻译：一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻完成了。在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

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