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1. 发明授权

US06291520B1 Hydroxamic acid and N-hydroxyurea derivatives and their use 失效
标题翻译：羟肟酸和N-羟基脲衍生物及其用途
公开(公告)号：US06291520B1
公开(公告)日：2001-09-18
申请号：US08070327
申请日：1993-06-28
申请人： Takafumi Ikeda , Akiyoshi Kawai , Takashi Mano , Yoshiyuki Okumura , Rodney William Stevens
发明人： Takafumi Ikeda , Akiyoshi Kawai , Takashi Mano , Yoshiyuki Okumura , Rodney William Stevens
IPC分类号： A61K3127
CPC分类号： C07D271/07 , C07C275/64 , C07C311/59 , C07C323/47 , C07C335/40 , C07C2601/04 , C07C2601/08 , C07D307/52
摘要： Certain novel hydroxamic acid derivatives having the structure inhibit the enzyme lipoxygenase. These compounds, and the pharmaceutically acceptable salts thereof, are useful in the treatment or alleviation of inflammatory diseases, allergic conditions and cardiovascular diseases in mammals and as the active ingredient in pharmaceutical compositions for treating such conditions.
摘要翻译：某些具有抑制酶脂氧合酶结构的新型异羟肟酸衍生物。这些化合物及其药学上可接受的盐可用于治疗或缓解哺乳动物中的炎性疾病，过敏性疾病和心血管疾病，并且可用作用于治疗这些病症的药物组合物中的活性成分。

2. 发明授权

US5521212A Cyclopropyl N-hydroxyurea and N-hydroxyacetamides which inhibit lipoxygenase 失效
标题翻译：抑制脂氧合酶的环丙基N-羟基脲和N-羟基乙酰胺
公开(公告)号：US5521212A
公开(公告)日：1996-05-28
申请号：US244739
申请日：1994-08-26
申请人： Takafumi Ikeda , Akiyoshi Kawai , Takashi Mano , Yoshiyuki Okumura , Rodney W. Stevens
发明人： Takafumi Ikeda , Akiyoshi Kawai , Takashi Mano , Yoshiyuki Okumura , Rodney W. Stevens
IPC分类号： C07C259/06 , C07C275/64 , C07C323/44 , C07D295/15 , A61K31/40 , A61K31/33 , A61K31/445 , C07D295/195
CPC分类号： C07D295/15 , C07C259/06 , C07C275/64 , C07C323/44 , C07C2101/02
摘要： Compounds of the formula ##STR1## wherein A is C1 to C3 alkylene, Ar is phenyl or styryl, R is halosubstituted C1 to C3 alkyl, NHR' or ##STR2## R' is hydrogen or C2 to C8 alkytthioalkyl, n is an integer of from 1 to 4 and p is an integer of from 2 to 5, with the proviso that when R' is hydrogen then Ar is styryl, and the pharmaceutically acceptable salts thereof, inhibit the enzyme lipoxygenase and are useful in treating allergy and inflammatory and cardiovascular conditions for which the action of lipoxygenase has been implicated. These compounds form the active ingredient in pharmaceutical compositions for treating such conditions.
摘要翻译： PCT No.PCT / US92 / 08979 Sec。 371日期1991年8月26日 102（e）1991年8月26日PCT PCT 1991年10月27日PCT。其中A为C1至C3亚烷基，Ar为苯基或苯乙烯基的式为“IMAGE”的化合物，R为卤素取代的C1至C3烷基，NHR'或 R 1为氢或C 2至C 8烷硫基烷基，n为1至4的整数，p为2至5的整数，条件是当R'为氢时Ar为苯乙烯基，其可接受的盐抑制酶脂氧合酶，并且可用于治疗已经涉及脂加氧酶的作用的过敏和炎性和心血管疾病。这些化合物在用于治疗这些病症的药物组合物中形成活性成分。

3. 发明授权

US06444677B2 5-membered heteroaryl substituted 1,4-dihydropyridine compounds as bradykinin antagonists 失效
标题翻译： 5元杂芳基取代的1,4-二氢吡啶化合物作为缓激肽拮抗剂
公开(公告)号：US06444677B2
公开(公告)日：2002-09-03
申请号：US09731995
申请日：2000-12-07
申请人： Takafumi Ikeda , Mitsuhiro Kawamura , Noriaki Murase , Seiji Nukui , Yuji Shishido , Makato Kawai , Yoshiyuki Okumura
发明人： Takafumi Ikeda , Mitsuhiro Kawamura , Noriaki Murase , Seiji Nukui , Yuji Shishido , Makato Kawai , Yoshiyuki Okumura
IPC分类号： C07D40100
CPC分类号： C07D417/06 , C07D417/12 , C07D417/14
摘要： This invention provides a compound of the formula (I): or the pharmaceutically acceptable salts thereof wherein A is independently halo; Y1 is —(CH2)m—, C(O) or S(O); Y2 is N or CH; R1 and R2 are independently C1-4 alkyl; R3 is selected from the following: (a) optionally substituted —(CH2)p—C3-7 cycloalkyl; (b) optionally substituted —C5-7 alkyl; and (c) substituted —C1-4 alkyl; and (d) optionally substituted C7-9 bicycloalkyl; R4 is optionally substituted thiazolyl, imidazolyl or oxazolyl; X is S, —NH, —N—C1-4 alkyl or O; R5 is hydrogen or C1-4 alkyl; R6 is C1-4 alkyl or halo; m is 0, 1 or 2; n is 0, 1, 2, 3, 4 or S; and p is 0, 1, 2, 3, 4, 5 or 6. These compounds are useful for the treatment of medical conditions caused by bradykinin such as inflammation, cardiovascular disease, pain, etc. This invention also provides a pharmaceutical composition comprising the above compound.
摘要翻译：本发明提供式（I）的化合物或其药学上可接受的盐，其中A独立地为卤素; Y1是 - （CH2）m-，C（O）或S（O）; Y2是N或CH; R1和R2独立地是C1-4烷基; R3选自如下：（a）任选取代的 - （CH 2）p -C 3-7环烷基;（b）任选取代的-C 5-7烷基; 和（c）取代的C 1-4烷基; 和（d）任选取代的C 7-9双环烷基; R 4是任选取代的噻唑基，咪唑基或恶唑基; X是S，-NH，-N-C 1-4烷基或O; R 5是氢或C 1-4烷基; R6是C1-4烷基或卤素; m是0,1或2; n为0，1，2，3，4或S; 并且p为0,1,2,3,4,5或6.这些化合物可用于治疗由缓激肽引起的疾病如炎症，心血管疾病，疼痛等。本发明还提供一种药物组合物，其包含以上化合物。

4. 发明授权

US08154071B2 Nonvolatile semiconductor memory device and method for fabricating nonvolatile semiconductor memory device 失效
标题翻译：用于制造非易失性半导体存储器件的非易失性半导体存储器件和方法
公开(公告)号：US08154071B2
公开(公告)日：2012-04-10
申请号：US12467689
申请日：2009-05-18
申请人： Hiroyuki Ishii , Takafumi Ikeda
发明人： Hiroyuki Ishii , Takafumi Ikeda
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/42336 , H01L27/11519 , H01L27/11521 , H01L27/11526 , H01L27/11534 , H01L29/7881
摘要： According to an aspect of the present invention, there is provided a method for fabricating a nonvolatile semiconductor memory device including a memory cell being formed in a first region of a semiconductor substrate and a periphery circuit being formed in a second region of the semiconductor substrate, including forming a first gate electrode material film over the semiconductor substrate via a first gate insulator in the first region, etching the first gate electrode material film and the first gate insulator using a mask having a first opening in a first element isolation of the first region, etching the semiconductor substrate to a first depth to form a first isolation groove, forming a first insulation isolation layer in the first isolation groove, forming a second insulator on the first insulation isolation layer and on the first gate electrode, removing the second insulator by anisotropic etching, etching an upper portion of the first gate electrode to a second depth to form a first concave portion on the upper portion of the first gate electrode, etching the first side-wall film and the first insulation isolation layer to a depth at a bottom surface of the first concave portion, forming a second gate insulator on the upper portion of the first gate electrode, and forming a second gate electrode material film on the second gate insulator.
摘要翻译：根据本发明的一个方面，提供了一种用于制造非易失性半导体存储器件的方法，该非易失性半导体存储器件包括形成在半导体衬底的第一区域中的存储单元和形成在半导体衬底的第二区域中的外围电路，包括通过第一区域中的第一栅极绝缘体在半导体衬底上形成第一栅极电极材料膜，使用在第一区域的第一元件隔离中具有第一开口的掩模蚀刻第一栅电极材料膜和第一栅极绝缘体，将所述半导体衬底蚀刻到第一深度以形成第一隔离槽，在所述第一隔离槽中形成第一绝缘隔离层，在所述第一绝缘隔离层和所述第一栅电极上形成第二绝缘体，通过各向异性蚀刻，将第一栅电极的上部蚀刻到第二深度以形成在第一栅电极的上部的第一凹部，将第一侧壁膜和第一绝缘隔离层蚀刻到第一凹部的底面的深度，在第二栅极绝缘体的上部形成第二栅极绝缘体第一栅电极，并在第二栅极绝缘体上形成第二栅电极材料膜。

5. 发明授权

US06920057B2 Semiconductor device that enables simultaneous read and write/read operation 有权
标题翻译：实现同时读/写操作的半导体器件
公开(公告)号：US06920057B2
公开(公告)日：2005-07-19
申请号：US10860275
申请日：2004-06-04
申请人： Yasuhiko Honda , Hideo Kato , Hidetoshi Saito , Masao Kuriyama , Tokumasa Hara , Takafumi Ikeda , Tatsuya Hiramatsu
发明人： Yasuhiko Honda , Hideo Kato , Hidetoshi Saito , Masao Kuriyama , Tokumasa Hara , Takafumi Ikeda , Tatsuya Hiramatsu
IPC分类号： G11C16/00 , G11C5/00 , G11C8/12 , G11C16/10 , G11C16/26 , G11C5/02
CPC分类号： G11C8/12 , G11C16/10 , G11C16/26 , G11C2216/22
摘要： A semiconductor device has a memory cell array having the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. The semiconductor device has a bank setting memory circuit configured to select an optional number of cores of the cores as a first bank and to set the remaining cores as a second bank, so as to allow a data read operation to be carried out in one of the first and second banks while a data write or erase operation is carried out in the other of the first and second banks.
摘要翻译：半导体器件具有存储单元阵列，其具有多个核心的布置，每个核心包括一个块或一组多个块，每个块定义作为数据擦除单位的存储单元的范围。半导体器件具有存储体设置存储器电路，其被配置为选择核心的可选数量的核心作为第一存储体，并且将剩余的核心设置为第二存储体，以便允许数据读取操作以在第一和第二组中的另一个中进行数据写入或擦除操作的第一和第二存储体。

6. 发明授权

US06407951B2 Pulse generator circuit and semiconductor memory provided with the same 失效
标题翻译：脉冲发生器电路和半导体存储器相同
公开(公告)号：US06407951B2
公开(公告)日：2002-06-18
申请号：US09892062
申请日：2001-06-25
申请人： Naoto Tomita , Hideo Kato , Takafumi Ikeda
发明人： Naoto Tomita , Hideo Kato , Takafumi Ikeda
IPC分类号： G11C700
CPC分类号： G11C7/22 , H03K5/153
摘要： A pulse generator circuit provides a capacitor, a constant current source circuit for charging the capacitor at a constant current in response to an input signal, and a differential amplifier circuit for comparing a charge voltage in the capacitor with a predetermined reference voltage Vref, thereby outputting a pulse signal.
摘要翻译：脉冲发生器电路提供电容器，用于响应于输入信号以恒定电流对电容器充电的恒流源电路和用于将电容器中的充电电压与预定参考电压Vref进行比较的差分放大器电路，从而输出脉冲信号。

7. 发明授权

US5761139A Semiconductor memory having redundancy memory cells 失效
标题翻译：具有冗余存储单元的半导体存储器
公开(公告)号：US5761139A
公开(公告)日：1998-06-02
申请号：US761482
申请日：1996-12-06
申请人： Noboru Shibata , Hideo Kato , Yoshio Mochizuki , Takafumi Ikeda
发明人： Noboru Shibata , Hideo Kato , Yoshio Mochizuki , Takafumi Ikeda
IPC分类号： H01L27/112 , G11C29/00 , G11C29/04 , H01L21/8246 , G11C7/00
CPC分类号： G11C29/80 , G11C29/808
摘要： A redundancy memory cell array is arranged at an end of a main memory cell array in the column direction. Common bit lines and common column lines are arranged on the main memory cell array and the redundancy memory cell array. A disconnection circuit is arranged between the main memory cell array and the redundancy memory cell array for connecting or disconnecting bit lines or column lines. A column selection switch is arranged at an end of the redundancy memory cell array. A redundancy circuit disconnects bit lines or column lines by means of a disconnection circuit when an address signal specifies a defective address.
摘要翻译：冗余存储单元阵列布置在列方向上的主存储单元阵列的末端。公共位线和公共列线被布置在主存储单元阵列和冗余存储单元阵列上。在主存储单元阵列和用于连接或断开位线或列线的冗余存储单元阵列之间布置断开电路。列选择开关布置在冗余存储单元阵列的末端。当地址信号指定有缺陷的地址时，冗余电路通过断开电路来断开位线或列线。

8. 发明授权

US08304683B2 Seam welding apparatus and seam welding method 有权
标题翻译：接缝焊接设备和缝焊方法
公开(公告)号：US08304683B2
公开(公告)日：2012-11-06
申请号：US12823594
申请日：2010-06-25
申请人： Eisaku Hasegawa , Shogo Matsuda , Takafumi Ikeda
发明人： Eisaku Hasegawa , Shogo Matsuda , Takafumi Ikeda
IPC分类号： B23K11/00
CPC分类号： B23K11/067 , B23K2101/12
摘要： A seam welding apparatus and a seam welding method perform a seaming process on workpieces of various shapes having flange sections, by preventing a welding track formed by upper and lower rotary electrodes from becoming displaced from a welding reference line established on the flange section. The seam welding apparatus includes two rotary electrodes for gripping the flange section therebetween while seam-welding the flange section, a support for synchronizing movements of the two rotary electrodes with each other in a widthwise direction of the flange section, a turning mechanism for pressing at least one of the two rotary electrodes toward the workpiece body, a roller that abuts against an end face of the flange section, and roller adjusting means for positionally adjusting the roller.
摘要翻译：缝焊设备和缝焊方法通过防止由上下旋转电极形成的焊接轨迹从建立在凸缘部分上的焊接基准线移位而对具有凸缘部分的各种形状的工件执行接缝处理。缝焊装置包括两个旋转电极，用于在对凸缘部进行接缝的同时夹持其间的凸缘部，用于使两个旋转电极在凸缘部的宽度方向上的移动同步的支撑件，朝向工件体的两个旋转电极中的至少一个，抵靠凸缘部的端面的辊以及用于位置调节辊的辊调节装置。

9. 再颁专利

USRE43549E1 Writing device for display members on drug carrier 失效
标题翻译：用于药物载体上的显示成员的书写装置
公开(公告)号：USRE43549E1
公开(公告)日：2012-07-24
申请号：US11366011
申请日：2006-03-02
申请人： Noaki Koike , Takafumi Ikeda
发明人： Noaki Koike , Takafumi Ikeda
IPC分类号： G06F17/00
CPC分类号： B65C9/46 , G06F19/00 , G07F17/0092
摘要： A writing device for display members is provided which can erasably writing patient information on a display member carried on the side of a drug carrier and automatically attach and detach it to and from the carrier. The writing device has an attach/detach/transfer unit for detaching, attaching and transferring a rewrite card to a carrier carrying the rewrite card, and a writing means connected to the attach/detach/transfer means for writing and displaying patient information on the rewrite card. The respective means are controlled based on prescription information to attach and detach the rewrite card to and from the side of the carrier.
摘要翻译：提供一种用于显示部件的写入装置，其可以将患者信息可擦写地放置在携带在药物载体侧的显示部件上，并自动地将其从载体上拆下。写入装置具有用于将重写卡分离，附着和传送到承载重写卡的载体的附着/分离/传送单元，以及连接到附着/分离/传送装置的写入装置，用于在重写时写入和显示患者信息卡。各个装置根据处方信息进行控制，以将重写卡与载体的侧面相连接和分离。

10. 发明申请

US20100326965A1 SEAM WELDING APPARATUS AND SEAM WELDING METHOD 有权
标题翻译：焊接设备和焊接焊接方法
公开(公告)号：US20100326965A1
公开(公告)日：2010-12-30
申请号：US12823594
申请日：2010-06-25
申请人： Eisaku Hasegawa , Shogo Matsuda , Takafumi Ikeda
发明人： Eisaku Hasegawa , Shogo Matsuda , Takafumi Ikeda
IPC分类号： B23K11/08
CPC分类号： B23K11/067 , B23K2101/12
摘要： A seam welding apparatus and a seam welding method perform a seaming process on workpieces of various shapes having flange sections, by preventing a welding track formed by upper and lower rotary electrodes from becoming displaced from a welding reference line established on the flange section. The seam welding apparatus includes two rotary electrodes for gripping the flange section therebetween while seam-welding the flange section, a support for synchronizing movements of the two rotary electrodes with each other in a widthwise direction of the flange section, a turning mechanism for pressing at least one of the two rotary electrodes toward the workpiece body, a roller that abuts against an end face of the flange section, and roller adjusting means for positionally adjusting the roller.
摘要翻译：缝焊设备和缝焊方法通过防止由上下旋转电极形成的焊接轨迹从建立在凸缘部分上的焊接基准线移位而对具有凸缘部分的各种形状的工件执行接缝处理。缝焊装置包括两个旋转电极，用于在对凸缘部进行接缝的同时夹持其间的凸缘部，用于使两个旋转电极在凸缘部的宽度方向上的移动同步的支撑件，朝向工件体的两个旋转电极中的至少一个，抵靠凸缘部的端面的辊以及用于位置调节辊的辊调节装置。

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