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    • 1. 发明授权
    • Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
    • 用于薄绝缘膜生产的烷氧基硅烷/有机聚合物组合物及其用途
    • US06448331B1
    • 2002-09-10
    • US09423798
    • 1999-11-12
    • Takaaki IokaTsuneaki Tanabe
    • Takaaki IokaTsuneaki Tanabe
    • C08G7702
    • C08J5/18C08G2270/00C08J2383/02C08J2383/04C08L83/02C08L83/04C09D183/12C09D183/14H01L21/02126H01L21/02203H01L21/02216H01L21/02282H01L21/02337H01L21/02359H01L21/3122H01L21/316H01L21/31695Y10S525/903Y10T428/31507Y10T428/31663C08L2666/02
    • Disclosed is an alkoxysilane/organic polymer composition for use in producing an insulating thin film, comprising (A) a specific alkoxysilane; (B) a specific organic polymer; and (C) a solvent for alkoxysilane (A) and organic polymer (B), wherein solvent (C) comprises at least one organic solvent selected from the group consisting of amide linkage-containing organic solvents and ester linkage-containing organic solvents. Also disclosed are a silica-organic polymer composite thin film which is produced by a process comprising: forming a thin film of the composition of the present invention; subjecting the thin film to a hydrolysis and dehydration-condensation reaction with respect to the alkoxysilane thereof, to thereby cause the alkoxysilane to be gelled in the thin film; and removing the solvent remaining in the thin film by drying, and a porous silica thin film which is obtained by removing the organic polymer from the silica-organic polymer composite thin film. Both of the silica-organic polymer composite thin film and the porous silica thin film have advantages not only in that these thin films have a low dielectric constant suitable for insulating layers for a multilevel interconnect for a semiconductor device, but also in that these thin films can be produced by a method which can be easily performed in the current process for producing a semiconductor device.
    • 公开了用于制造绝缘薄膜的烷氧基硅烷/有机聚合物组合物,其包含(A)特定的烷氧基硅烷; (B)特定的有机聚合物; 和(C)烷氧基硅烷(A)和有机聚合物(B)的溶剂,其中溶剂(C)包含至少一种选自含酰胺键的有机溶剂和含有酯键的有机溶剂的有机溶剂。 还公开了一种二氧化硅 - 有机聚合物复合薄膜,其通过以下方法制备,所述方法包括:形成本发明组合物的薄膜; 使薄膜与其烷氧基硅烷进行水解和脱水缩合反应,从而使烷氧基硅烷在薄膜中凝胶化; 并通过干燥除去残留在薄膜中的溶剂,以及通过从二氧化硅 - 有机聚合物复合薄膜中除去有机聚合物而获得的多孔二氧化硅薄膜。 二氧化硅 - 有机聚合物复合薄膜和多孔二氧化硅薄膜的优点不仅在于这些薄膜具有适于用于半导体器件的多层互连的绝缘层的低介电常数,而且这些薄膜 可以通过在当前的制造半导体器件的工艺中容易地进行的方法来制造。
    • 2. 发明授权
    • Method of manufacturing interconnection structural body
    • 互连结构体的制造方法
    • US06479374B1
    • 2002-11-12
    • US09647310
    • 2000-09-27
    • Takaaki IokaTsuneaki TanabeIchiro Doi
    • Takaaki IokaTsuneaki TanabeIchiro Doi
    • H01L2144
    • H01L21/02126H01L21/02203H01L21/02216H01L21/02282H01L21/02345H01L21/31695
    • Disclosed is a method for producing a circuit structure having an insulator layer comprising a porous silicon oxide thin film, which comprises (1) forming a preliminary insulator layer comprising a silicon oxide-organic polymer composite thin film formed on a substrate, which silicon oxide-organic polymer composite thin film comprises a silicon oxide having an organic polymer dispersed therein, (2) forming, in the preliminary insulator layer, a groove which defines a pattern for a circuit, (3) forming, in the groove, a metal layer which functions as a circuit, and (4) removing the organic polymer from the preliminary insulator layer to render the preliminary insulator layer porous, thereby converting the preliminary insulator layer to an insulator layer comprising a porous silicon oxide thin film. By the method of the present invention, the capacitance between mutually adjacent circuit lines (line-to-line capacitance) in the circuit structure can be lowered.
    • 公开了一种具有包括多孔氧化硅薄膜的绝缘体层的电路结构的方法,该方法包括:(1)形成包含在基板上形成的氧化硅 - 有机聚合物复合薄膜的预备绝缘体层, 有机聚合物复合薄膜包括其中分散有有机聚合物的氧化硅,(2)在预备绝缘体层中形成限定电路图案的凹槽,(3)在凹槽中形成金属层, 作为电路起作用,(4)从预备绝缘体层除去有机聚合物,使预备绝缘体层多孔化,由此将预备绝缘体层转化为包含多孔氧化硅薄膜的绝缘体层。 通过本发明的方法,可以降低电路结构中相互相邻的电路线之间的电容(线对线电容)。
    • 5. 发明授权
    • Coating composition for forming low-refractive index thin layers
    • 用于形成低折射率薄层的涂料组合物
    • US07081272B2
    • 2006-07-25
    • US10496870
    • 2002-12-13
    • Yoro SasakiHiroyuki HanahataTakaaki Ioka
    • Yoro SasakiHiroyuki HanahataTakaaki Ioka
    • B05D3/10
    • C09D183/14C08G77/08C09D1/00C09D183/04
    • A composition comprising a fluid, silica precursor (A) obtained by subjecting alkoxysilane(s) to hydrolysis/polycondensation in the presence of an acid catalyst, a basic compound (B) having a basic hydroxyl group and/or a basic nitrogen atom, wherein the pH of a 0.1 N aqueous solution of compound (B) is 11 or more, and the vapor pressure of compound (B) is 1.3 kPa or lower at 100° C., and an organic compound (C) having a boiling point of 100° C. or higher, compound (C) being compatible with silica precursor (A), wherein the amount of compound (B) is from 0.0015 to 0.5 mol, in terms of the total molar amount of the basic hydroxyl groups and the basic nitrogen atoms in compound (B), per mole of Si atoms contained in silica precursor (A).
    • 一种组合物,其包含流体,在酸催化剂存在下使烷氧基硅烷进行水解/缩聚而得到的二氧化硅前体(A),碱性羟基和/或碱性氮原子的碱性化合物(B),其中 化合物(B)的0.1N水溶液的pH为11以上,化合物(B)的蒸气压在100℃下为1.3kPa以下,有机化合物(C)的沸点为 100℃以上的化合物(C)与二氧化硅前体(A)相容,其中化合物(B)的量为碱金属羟基和碱性羟基的总摩尔量的0.0015〜0.5摩尔 化合物(B)中的氮原子,相对于二氧化硅前体(A)中所含的每摩尔Si原子。