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1. 发明授权

US06664174B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06664174B2
公开(公告)日：2003-12-16
申请号：US09928489
申请日：2001-08-14
申请人： Taiji Ema , Edward J. Swenson , Thomas W. Richardson , Yunlong Sun
发明人： Taiji Ema , Edward J. Swenson , Thomas W. Richardson , Yunlong Sun
IPC分类号： H01L2144
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.
摘要翻译：该半导体器件包括形成在基板10上的阻挡层12，形成在阻挡层12上的绝缘膜14以及形成在绝缘膜14上的保险丝22。阻挡层12形成在保险丝22的下方，从而保险丝通过激光烧蚀断开，并且激光烧蚀可以通过阻挡层12以良好的可控性而停止，而不损坏衬底。要断开的保险丝可以以非常小的间距布置，这可以提高保险丝电路的集成度。

2. 发明授权

US06297541B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06297541B1
公开(公告)日：2001-10-02
申请号：US09238171
申请日：1999-01-28
申请人： Taiji Ema , Edward J. Swenson , Thomas W. Richardson , Yunlong Sun
发明人： Taiji Ema , Edward J. Swenson , Thomas W. Richardson , Yunlong Sun
IPC分类号： H01L2358
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device comprises a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.
摘要翻译：半导体器件包括形成在衬底10上的阻挡层12，形成在阻挡层12上的绝缘膜14和形成在绝缘膜14上的保险丝22。阻挡层12形成在保险丝22的下面，由此熔断器通过激光烧蚀断开，并且激光烧蚀可以通过阻挡层12以良好的可控性而停止，而不损坏衬底。要断开的保险丝可以以非常小的间距布置，这可以提高保险丝电路的集成度。

3. 发明授权

US07482551B2 Processing a memory link with a set of at least two laser pulses 有权
标题翻译：用一组至少两个激光脉冲处理存储器链接
公开(公告)号：US07482551B2
公开(公告)日：2009-01-27
申请号：US11286132
申请日：2005-11-23
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： B23K26/02 , B23K26/08 , H01L21/77
CPC分类号： B23K26/04 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , B23K26/361 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/0092 , H01S3/1118 , H01S3/2383 , H01S5/4012 , Y10S438/94 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。可以使用传统的IR波长或它们的谐波。

4. 发明授权

US07241669B2 Method of forming a scribe line on a passive electronic component substrate 有权
标题翻译：在无源电子部件基板上形成划线的方法
公开(公告)号：US07241669B2
公开(公告)日：2007-07-10
申请号：US10887662
申请日：2004-07-09
申请人： Edward J. Swenson , Yunlong Sun , Manoj Kumar Sammi , Jay Christopher Johnson , Doug Garcia , Rupendra M. Anklekar
发明人： Edward J. Swenson , Yunlong Sun , Manoj Kumar Sammi , Jay Christopher Johnson , Doug Garcia , Rupendra M. Anklekar
IPC分类号： H01L21/00
CPC分类号： B23K26/0622 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/52 , B28D5/0011 , H01L2224/16 , H01L2924/0102 , H01L2924/01067 , H01L2924/01068 , H01L2924/01077 , H01L2924/09701 , Y10S438/94
摘要： A method of forming a scribe line having a sharp snap line entails directing a UV laser beam along a ceramic or ceramic-like substrate such that a portion of the thickness of the substrate is removed. The UV laser beam forms a scribe line in the substrate without appreciable substrate melting so that a clearly defined snap line forms a region of high stress concentration extending into the thickness of the substrate. Consequently, multiple depthwise cracks propagate into the thickness of the substrate in the region of high stress concentration in response to a breakage force applied to either side of the scribe line to effect clean fracture of the substrate into separate circuit components. The formation of this region facilitates higher precision fracture of the substrate while maintaining the integrity of the interior structure of each component during and after application of the breakage force.
摘要翻译：形成具有尖锐捕捉线的划线的方法需要沿着陶瓷或陶瓷状衬底引导UV激光束，使得去除衬底厚度的一部分。 UV激光束在衬底中形成划线，而没有明显的衬底熔化，使得明确限定的捕捉线形成延伸到衬底厚度的高应力集中区域。因此，响应于施加到划线的任一侧的断裂力，多个深度裂纹在高应力集中区域中传播到基板的厚度中，以使基板清洁断裂成单独的电路部件。该区域的形成促进了基板的高精度断裂，同时在施加破损力的同时保持了每个部件的内部结构的完整性。

5. 发明授权

US06919532B2 Method of forming dimensionally precise slots in resilient mask of miniature component carrier 有权
标题翻译：在微型部件载体的弹性掩模中形成尺寸精确的槽的方法
公开(公告)号：US06919532B2
公开(公告)日：2005-07-19
申请号：US10678951
申请日：2003-10-03
申请人： Edward J. Swenson , John D. Stackpole , Yunlong Sun , Manoj Sammi
发明人： Edward J. Swenson , John D. Stackpole , Yunlong Sun , Manoj Sammi
IPC分类号： B23K26/18 , B23K26/38 , H05K13/00 , B23K26/00
CPC分类号： H05K13/0084 , B23K26/0006 , B23K26/18 , B23K26/361 , B23K26/384 , B23K2103/50
摘要： A laser beam (102) cuts through a component carrier mask (96) made of thin elastomeric material such as silicone rubber to form slots (98) having slot openings of a desired shape. In a preferred embodiment, a light absorptivity enhancement material such as iron oxide introduced into the silicone rubber causes formation of a flexible support blank that operationally adequately absorbs light within a light absorption wavelength range. A beam positioner (106) receiving commands from a programmed controller causes a UV laser beam of a wavelength that is within the light absorption wavelength range to cut into the mask multiple slots with repeatable, precise dimensions. Each of the slots cut has opposed side margins that define between them a slot opening of suitable shape to receive a miniature component (10) and to exert on it optimal holding and release forces.
摘要翻译：激光束（102）切穿由诸如硅橡胶的薄弹性体材料制成的部件载体掩模（96），以形成具有所需形状的槽口的槽（98）。在优选的实施方案中，引入到硅橡胶中的诸如氧化铁的光吸收增强材料引起形成柔性支撑坯料，其可操作地充分吸收光吸收波长范围内的光。从编程的控制器接收命令的光束定位器（106）使得在光吸收波长范围内的波长的UV激光束可以重复精确的尺寸切割成多个槽。切割的每个切口具有相对的侧边缘，其在它们之间限定适当形状的狭槽开口，以接收微型部件（10）并且施加最佳的保持和释放力。

6. 发明授权

US06574250B2 Laser system and method for processing a memory link with a burst of laser pulses having ultrashort pulse widths 有权
公开(公告)号：US06574250B2
公开(公告)日：2003-06-03
申请号：US09757418
申请日：2001-01-09
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： H01S310
CPC分类号： H01L23/5258 , B23K26/04 , B23K26/0622 , B23K26/0624 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： A burst (50) of ultrashort laser pulses (52) is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst (50) is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse (52) within the burst (50) is generally shorter than 25 ps, preferably shorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst (50) of laser pulses (52) at each link (22). Conventional wavelengths or their harmonics can be employed.

7. 发明授权

US08338746B2 Method for processing a memory link with a set of at least two laser pulses 有权
标题翻译：一种用一组至少两个激光脉冲处理存储器连接的方法
公开(公告)号：US08338746B2
公开(公告)日：2012-12-25
申请号：US12705433
申请日：2010-02-12
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： B23K26/02 , B23K26/08 , B23K23/36 , B23K26/38 , B23K26/40
CPC分类号： B23K26/04 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , B23K26/361 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/0092 , H01S3/1118 , H01S3/2383 , H01S5/4012 , Y10S438/94 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。通过传统的激光定位系统（62）可以将集合（50）视为单个脉冲，以便在激光系统（60）激发一组（50）激光脉冲（52）时执行动态链路去除而不停止，在每个链路（22）处。可以使用传统的IR波长或它们的谐波。

8. 发明授权

US07671295B2 Processing a memory link with a set of at least two laser pulses 失效
标题翻译：用一组至少两个激光脉冲处理存储器链接
公开(公告)号：US07671295B2
公开(公告)日：2010-03-02
申请号：US10322347
申请日：2002-12-17
申请人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
发明人： Yunlong Sun , Edward J. Swenson , Richard S. Harris
IPC分类号： B23K26/02 , B23K26/08 , H01L21/77
CPC分类号： B23K26/04 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/0624 , B23K26/067 , B23K26/361 , G03F7/70041 , G03F7/70725 , H01L21/76894 , H01L23/5258 , H01L2924/0002 , H01S3/005 , H01S3/0057 , H01S3/0085 , H01S3/0092 , H01S3/1118 , H01S3/2383 , H01S5/4012 , Y10S438/94 , H01L2924/00
摘要： A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.
摘要翻译：使用一组（50）激光脉冲（52）来切断存储器或其它IC芯片中的导电链路（22）。组（50）的持续时间优选短于1,000ns; 并且组（50）内的每个激光脉冲（52）的脉冲宽度优选在约0.1ps至30ns的范围内。传统的激光定位系统（62）可将组（50）视为单个“脉冲”，以便在激光系统（60）激发一组（50）激光脉冲（50） 52）。可以使用传统的IR波长或它们的谐波。

9. 发明授权

US6057180A Method of severing electrically conductive links with ultraviolet laser output 失效
标题翻译：用紫外线激光输出切断导电连接的方法
公开(公告)号：US6057180A
公开(公告)日：2000-05-02
申请号：US92490
申请日：1998-06-05
申请人： Yunlong Sun , Edward J. Swenson
发明人： Yunlong Sun , Edward J. Swenson
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/82 , H01L23/52 , H01L71/82
CPC分类号： H01L21/76894
摘要： Ultraviolet (UV) laser output (88) exploits the absorption characteristics of the materials from which an electrically conductive link (42), an underlying semiconductor substrate (50), and passivation layers (48 and 54) are made to effectively remove the link (42) without damaging the substrate (50). The UV laser output (88) forms smaller than conventional IR laser link-blowing spot diameters (58) because of its shorter wavelength, thus permitting the implementation of greater circuit density. A passivation layer positioned between the link and the substrate can be formulated to be sufficiently absorptive to UV laser energy and sufficiently thick to attenuate the laser energy to prevent it from damaging the substrate (50) in the laser beam spot area (43) in both the off-link and link-overlapped portions. The UV laser output (88) can be employed to controllably ablate a depthwise portion of the passivation layer (54) underlying the link (42) to facilitate complete removal of the link (42). In addition, direct ablation of the passivation layer (48) with the UV laser output (88) facilitates predictable and consistent link severing profiles. The absorption characteristics of the passivation material also reduces the risk of damage to neighboring links or other active structures.
摘要翻译：紫外线（UV）激光输出（88）利用材料的吸收特性，导电连接（42），下面的半导体衬底（50）和钝化层（48和54）被制成以有效地去除连接 42），而不损坏基板（50）。紫外激光输出（88）由于其波长较短而小于传统的红外激光链接发射光点直径（58），因此允许实现更大的电路密度。定位在连接件和衬底之间的钝化层可被配制为对UV激光能量具有足够的吸收性，并且足够厚以衰减激光能量，以防止激光能量损坏激光束光斑区域（43）中的衬底（50）脱离链接和链接重叠部分。可以使用UV激光输出（88）来可控制地消融链路（42）下面的钝化层（54）的深度方向部分，以便于完全去除链路（42）。此外，用UV激光输出（88）直接消融钝化层（48）有助于可预测和一致的链路切断简档。钝化材料的吸收特性也降低了损坏相邻链节或其他活性结构的风险。

10. 发明授权

US5808272A Laser system for functional trimming of films and devices 失效
标题翻译：用于膜和器件功能修整的激光系统
公开(公告)号：US5808272A
公开(公告)日：1998-09-15
申请号：US959140
申请日：1997-10-28
申请人： Yunlong Sun , Edward J. Swenson
发明人： Yunlong Sun , Edward J. Swenson
IPC分类号： B23K26/00 , B23K26/06
CPC分类号： B23K26/032 , B23K26/06 , B23K26/064 , B23K26/0643 , B23K26/0665 , B23K26/351
摘要： A laser system (50) and processing method exploit a wavelength range (40) in which devices, including any semiconductor material-based devices (10) affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing performance drift or malfunctions in the processed devices. True measurement values of operational parameters of the devices can, therefore, be obtained without delay for device recovery, i.e., can be obtained substantially instantaneously with laser impingement. Accordingly, the present invention allows faster functional laser processing, eases geometric restrictions on circuit design, and facilitates production of denser and smaller devices.
摘要翻译：激光系统（50）和处理方法利用波长范围（40），其中包括受常规激光波长影响的任何基于半导体材料的器件（10）的器件和具有集成到其电路中的光敏或光电子部分的器件，可以有效地进行功能修剪，而不会引起处理器件中的性能漂移或故障。因此，可以无延迟地获得器件的操作参数的真实测量值，用于器件恢复，即可以通过激光冲击基本上即时获得。因此，本发明允许更快的功能激光处理，简化了对电路设计的几何限制，并且便于生产更致密和更小的器件。

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