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1. 发明授权

US07993994B2 Method of forming crystallized silicon and method of fabricating thin film transistor and liquid crystal display using the same 有权
标题翻译：形成结晶硅的方法和使用其制造薄膜晶体管和液晶显示器的方法
公开(公告)号：US07993994B2
公开(公告)日：2011-08-09
申请号：US12412682
申请日：2009-03-27
申请人： Tae-Hyung Hwang , Hyun-Jae Kim , Do-Kyung Kim , Woong-Hee Jeong , Choong-Hee Lee , Tae-Hun Jung
发明人： Tae-Hyung Hwang , Hyun-Jae Kim , Do-Kyung Kim , Woong-Hee Jeong , Choong-Hee Lee , Tae-Hun Jung
IPC分类号： H01L21/00 , H01L21/84 , H01L21/20 , H01L21/36
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02667 , H01L27/1281 , H01L27/1285
摘要： A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.
摘要翻译：一种使非晶硅结晶的方法包括在衬底上形成非晶硅层; 在所述非晶硅层上形成绝缘层; 在绝缘层上形成热分布金属层; 以及在所述散热金属层上形成一个硅酸盐层。然后施加点火热以点燃铝酸盐层，并从点燃的铝酸盐层产生足够的局部放热，以使非晶硅层结晶。非晶硅层下面的衬底可以是通过通过散热金属层和绝缘层施加到非晶硅层的顶部的局部结晶热而基本上不变形的热敏衬底。

2. 发明授权

US08785967B2 Local crystallization by heat treatment 有权
标题翻译：通过热处理局部结晶
公开(公告)号：US08785967B2
公开(公告)日：2014-07-22
申请号：US12575347
申请日：2009-10-07
申请人： Tae-Hyung Hwang , Hyun-Jae Kim , Doh-Kyung Kim , Tae-Hun Jung , Woong-Hee Jeong , Choong-Hee Lee
发明人： Tae-Hyung Hwang , Hyun-Jae Kim , Doh-Kyung Kim , Tae-Hun Jung , Woong-Hee Jeong , Choong-Hee Lee
IPC分类号： H01L21/20 , C30B1/02 , C30B29/06 , H01L21/02 , H01L27/12
CPC分类号： C30B29/06 , B32B2457/202 , C30B1/023 , H01L21/02532 , H01L21/02667 , H01L27/1214 , H01L27/1218 , H01L27/1285
摘要： Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.
摘要翻译：公开了能够局部结晶非晶硅的结晶装置。结晶装置包括发热部，支撑部和辊。发热部分在接收到发热源时发热。支撑部分支撑散热部分并将散热源提供给散热部分。辊接收热发射部分并且具有至少一个开口以向目标（例如非晶硅）提供热量。进行局部结晶而不会损坏基板。

3. 发明申请

US20100087051A1 LOCAL CRYSTALLIZATION BY HEAT TREATMENT 有权
标题翻译：热处理本地结晶
公开(公告)号：US20100087051A1
公开(公告)日：2010-04-08
申请号：US12575347
申请日：2009-10-07
申请人： Tae-Hyung Hwang , Hyun-Jae Kim , Doh-Kyung Kim , Tae-Hun Jung , Woong-Hee Jeong , Choong-Hee Lee
发明人： Tae-Hyung Hwang , Hyun-Jae Kim , Doh-Kyung Kim , Tae-Hun Jung , Woong-Hee Jeong , Choong-Hee Lee
IPC分类号： H01L21/20 , B32B37/12 , B01D9/00
CPC分类号： C30B29/06 , B32B2457/202 , C30B1/023 , H01L21/02532 , H01L21/02667 , H01L27/1214 , H01L27/1218 , H01L27/1285
摘要： Disclosed is a crystallization apparatus capable of locally crystallizing amorphous silicon. The crystallization apparatus includes a heat emission part, a support part and a roller. The heat emission part emits heat upon receiving a heat emission source. The support part supports the heat emission part and provides the heat emission source to the heat emission part. The roller receives the heat emission part and has at least one opening to provide heat to a target (e.g., amorphous silicon). Local crystallization is performed without causing damage to a substrate.
摘要翻译：公开了能够局部结晶非晶硅的结晶装置。结晶装置包括发热部，支撑部和辊。发热部分在接收到发热源时发热。支撑部分支撑散热部分并将散热源提供给散热部分。辊接收热发射部分并且具有至少一个开口以向目标（例如非晶硅）提供热量。进行局部结晶而不会损坏基板。

4. 发明授权

US08729551B2 Flat panel display 有权
标题翻译：平板显示器
公开(公告)号：US08729551B2
公开(公告)日：2014-05-20
申请号：US13038545
申请日：2011-03-02
申请人： Nam-Seok Roh , Jung-Woo Park , Dae-Jin Park , Yu-Jin Kim , Joo-Han Bae , Tae-Hyung Hwang , Seok-Joon Hong
发明人： Nam-Seok Roh , Jung-Woo Park , Dae-Jin Park , Yu-Jin Kim , Joo-Han Bae , Tae-Hyung Hwang , Seok-Joon Hong
IPC分类号： H01L27/32 , H01L51/50
CPC分类号： G02F1/167 , G02B26/005
摘要： A flat panel display includes; a first substrate, a white reflective layer disposed on the first substrate, a pixel electrode disposed on the white reflective, a second substrate disposed facing the first substrate, a common electrode disposed on the second substrate, and an electrooptic layer disposed between the pixel electrode and the common electrode, wherein the white reflective layer includes at least one of TiO2 and BaSO4.
摘要翻译：平板显示器包括：第一基板，布置在第一基板上的白色反射层，设置在白色反射板上的像素电极，与第一基板相对配置的第二基板，设置在第二基板上的公共电极，以及设置在像素电极之间的电光层和所述公共电极，其中所述白色反射层包括TiO 2和BaSO 4中的至少一种。

5. 发明授权

US08304280B2 Method of forming a thin film transistor having openings formed therein 有权
公开(公告)号：US08304280B2
公开(公告)日：2012-11-06
申请号：US12857442
申请日：2010-08-16
申请人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
发明人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
IPC分类号： H01L21/336
摘要： A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.

6. 发明授权

US08026990B2 Thin film transistor, method of recovering performance of the same, and liquid crystal display employing the same 有权
标题翻译：薄膜晶体管，其性能的恢复方法以及采用该薄膜晶体管的液晶显示器
公开(公告)号：US08026990B2
公开(公告)日：2011-09-27
申请号：US12249833
申请日：2008-10-10
申请人： Tae-Hyung Hwang , Hyung-Il Jeon , Nikulin Ivan
发明人： Tae-Hyung Hwang , Hyung-Il Jeon , Nikulin Ivan
IPC分类号： G02F1/136 , G02F1/133
CPC分类号： G02F1/136259 , G02F1/133305 , G02F1/1368 , G02F2201/12 , G02F2202/103 , G09G3/3696 , G09G2300/043 , H01L29/78606 , H01L29/78669
摘要： A method of compensating performance of a thin film transistor including a gate electrode, source and drain electrodes that are spaced apart from each other and insulated from the gate electrode, and an active layer to form a channel between the source and drain electrodes, includes applying a negative voltage to the gate electrode to compensate deterioration of the active layer.
摘要翻译：一种补偿薄膜晶体管的性能的方法，该薄膜晶体管包括彼此间隔开并与栅电极绝缘的栅电极，源电极和漏电极以及在源极和漏极之间形成沟道的有源层，包括施加向栅电极施加负电压以补偿有源层的劣化。

7. 发明申请

US20100311196A1 THIN FILM TRANSISTOR HAVING OPENINGS FORMED THEREIN 有权
标题翻译：具有形成开口的薄膜晶体管
公开(公告)号：US20100311196A1
公开(公告)日：2010-12-09
申请号：US12857442
申请日：2010-08-16
申请人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
发明人： Keun-Kyu Song , Tae-Young Choi , Tae-Hyung Hwang , Seung-Hwan Cho
IPC分类号： H01L21/336
CPC分类号： H01L51/0541 , H01L27/1214 , H01L27/283 , H01L27/3244 , H01L51/0516 , H01L51/0545
摘要： A thin film transistor array panel includes a substrate, a plurality of first and second signal lines crossing each other on the substrate, source electrodes connected to the first signal lines, drain electrodes connected to the second signal lines, pixel electrodes connected to the drain electrodes, a first partition formed on the source and drain electrodes and having a first opening, wherein a lower width of the first opening is wider than an upper width of the first opening, an organic semiconductor formed in the first opening and at least overlapping the portions of the source electrode and the drain electrode, and a gate electrode connected to the second signal line and at least overlapping the portion of the organic semiconductor.
摘要翻译：薄膜晶体管阵列面板包括基板，在基板上彼此交叉的多个第一和第二信号线，连接到第一信号线的源电极，连接到第二信号线的漏电极，连接到漏电极的像素电极形成在源电极和漏电极上并具有第一开口的第一分区，其中第一开口的较低宽度比第一开口的上宽度宽;形成在第一开口中的至少重叠部分的有机半导体，源极电极和漏极电极，以及连接到第二信号线并至少与有机半导体的部分重叠的栅电极。

8. 发明授权

US08269942B2 Display apparatus and method of fabricating the same 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US08269942B2
公开(公告)日：2012-09-18
申请号：US12405994
申请日：2009-03-17
申请人： Tae-Hyung Hwang , Sang-Il Kim
发明人： Tae-Hyung Hwang , Sang-Il Kim
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133305 , G02F1/133514 , G02F2001/133567
摘要： A display apparatus that includes a first substrate, a second substrate, and a thin film transistor. The first substrate includes a fiber reinforced plastic substrate and a color filter layer formed on the fiber reinforced plastic substrate. The second substrate faces the first substrate. The thin film transistor is formed on the first substrate.
摘要翻译：一种显示装置，包括第一基板，第二基板和薄膜晶体管。第一基板包括纤维增强塑料基板和形成在纤维增强塑料基板上的滤色器层。第二基板面向第一基板。薄膜晶体管形成在第一基板上。

9. 发明申请

US20110147747A1 Display Device and Method of Manufacturing the Same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110147747A1
公开(公告)日：2011-06-23
申请号：US12907537
申请日：2010-10-19
申请人： Hyung-Il Jeon , Dae-Jin Park , Tae-Hyung Hwang
发明人： Hyung-Il Jeon , Dae-Jin Park , Tae-Hyung Hwang
IPC分类号： H01L33/16 , H01L33/08
CPC分类号： H01L27/1218 , H01L27/1248 , H01L29/78603
摘要： A display device includes a flexible panel and a cover member. The flexible panel includes a first substrate and a second substrate. The first substrate includes a first support layer in which an organic insulation layer and an inorganic insulation layer are stacked thereon, and a thin-film transistor and a pixel electrode disposed on the first support layer. The second substrate is opposite to the first substrate. The second substrate includes an organic insulation layer and a second support layer on which the inorganic insulation layer is deposited. The cover member covers an outer surface of the flexible panel. Thus, a display device is manufactured by using a support layer on which an organic insulation layer and an inorganic insulation layer are coated as a base substrate, so that defects generated in a manufacturing process may be prevented.
摘要翻译：显示装置包括柔性面板和盖构件。柔性面板包括第一基板和第二基板。第一基板包括其中堆叠有机绝缘层和无机绝缘层的第一支撑层，以及设置在第一支撑层上的薄膜晶体管和像素电极。第二基板与第一基板相对。第二基板包括有机绝缘层和沉积有无机绝缘层的第二支撑层。盖构件覆盖柔性面板的外表面。因此，通过使用其上涂覆有机绝缘层和无机绝缘层的支撑层作为基底基板来制造显示装置，从而可以防止制造过程中产生的缺陷。

10. 发明授权

US07803650B2 Sensor thin film transistor, thin film transistor substrate having the same, and method of manufacturing the same 有权
标题翻译：传感器薄膜晶体管，具有该薄膜晶体管的薄膜晶体管基板及其制造方法
公开(公告)号：US07803650B2
公开(公告)日：2010-09-28
申请号：US12202090
申请日：2008-08-29
申请人： Tae-Hyung Hwang , Hyung-Il Jeon , Ivan Nikulin
发明人： Tae-Hyung Hwang , Hyung-Il Jeon , Ivan Nikulin
IPC分类号： H01L21/00
CPC分类号： H01L27/14601 , H01L27/1214
摘要： A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V.
摘要翻译：传感器薄膜晶体管包括栅电极，形成在栅电极上的栅绝缘层，具有位于栅电极上方的部分和栅极绝缘层与栅电极相对的一侧的半导体层，以及源极和漏电极具有位于半导体层上的间隔开的端部，其中传感器薄膜晶体管的操作使得当施加到栅电极的栅极截止电压相等时，信噪比等于或大于约200 至或小于约0V。

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