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1. 发明申请

US20130031129A1 APPARATUS AND METHOD FOR EXTENDING A MODEL OF A SEMANTIC WEB APPLICATION, AND TERMINAL USING THE SAME 审中-公开
标题翻译：用于扩展语义WEB应用程序的模型的装置和方法，以及使用其的终端
公开(公告)号：US20130031129A1
公开(公告)日：2013-01-31
申请号：US13295920
申请日：2011-11-14
申请人： Tae-Ho Jang
发明人： Tae-Ho Jang
IPC分类号： G06F7/00 , G09G5/00
CPC分类号： G06F16/958 , G09G2370/027
摘要： A technique for extending a model of a semantic web application based on a model of a linked data set is provided. At least one linked data set related to the model of the semantic web application may be searched for, a model of the linked data set may be extracted, and information from the model of the linked data set may be added to the model of the semantic web application.
摘要翻译：提供了一种基于链接数据集的模型来扩展语义Web应用的模型的技术。可以搜索与语义Web应用的模型相关联的至少一个链接数据集，可以提取链接数据集的模型，并且可以将来自链接数据集的模型的信息添加到语义模型中 Web应用程序。

2. 发明申请

US20070288620A1 Method for managing state in a wireless network 有权
标题翻译：管理无线网络状态的方法
公开(公告)号：US20070288620A1
公开(公告)日：2007-12-13
申请号：US11715168
申请日：2007-03-07
申请人： Tae-Ho Jang
发明人： Tae-Ho Jang
IPC分类号： G06F15/173
CPC分类号： H04W80/02
摘要： A method for managing states by a Media Access Control (MAC) layer in a wireless network is disclosed. The method includes determining next occurable physical interrupts for each of the states; configuring a link of the states according to the determination result; transitioning to a state to be linked next if a physical interrupt occurs in each state; and transitioning to an initial state if an timer interrupt occurs in each state. The MAC layer transitions to the initial state if a physical interrupt occurs in a last state among the linked states. The physical interrupt occurs in association with a physical event, and the timer interrupt occurs in association with a timer event.
摘要翻译：公开了一种通过无线网络中的媒体访问控制（MAC）层来管理状态的方法。该方法包括确定每个状态的下一个可发生的物理中断; 根据确定结果配置状态的链接; 如果在每个状态下发生物理中断，则转换到要连接的状态; 并且如果在每个状态中发生定时器中断，则转换到初始状态。如果物理中断发生在链接状态中的最后状态，则MAC层转换到初始状态。物理中断与物理事件相关联，定时器中断与定时器事件相关联。

3. 发明授权

US07064387B2 Silicon-on-insulator (SOI) substrate and method for manufacturing the same 有权
标题翻译：绝缘体上硅（SOI）衬底及其制造方法
公开(公告)号：US07064387B2
公开(公告)日：2006-06-20
申请号：US10874403
申请日：2004-06-22
申请人： Tae-Ho Jang
发明人： Tae-Ho Jang
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/76243 , H01L21/76264 , H01L21/76267
摘要： A silicon-on-insulator (SOI) substrate includes a silicon substrate including an active region defined by a field region that surrounds the active region for device isolation. The field region includes a first oxygen-ion-injected isolation region and a second oxygen-ion-injected isolation region. The first oxygen-ion-injected isolation region has a first thickness and is disposed under the active region, a center of the first oxygen-ion-injected isolation region being at a first depth from a top surface of the silicon substrate. The second oxygen-ion-injected isolation region has a second thickness that is greater than the first thickness, the second oxygen-ion-injected isolation region disposed at sides of the active region and formed from a ton surface of the silicon substrate, a center of the second oxygen-ion-injected region disposed at a second depth from the top surface of the silicon substrate.
摘要翻译：绝缘体上硅（SOI）衬底包括硅衬底，其包括由围绕用于器件隔离的有源区域的场区限定的有源区。场区域包括第一氧离子注入隔离区域和第二氧离子注入隔离区域。第一氧离子注入隔离区具有第一厚度并且设置在有源区下方，第一氧离子注入隔离区的中心处于距离硅衬底顶表面的第一深度。所述第二氧离子注入隔离区具有大于所述第一厚度的第二厚度，所述第二氧离子注入隔离区域设置在所述有源区的侧面并由所述硅衬底的ton表面形成，的第二氧离子注入区域设置在距离硅衬底的顶表面的第二深度。

4. 发明授权

US08219732B2 Method for managing state in a wireless network 有权
标题翻译：管理无线网络状态的方法
公开(公告)号：US08219732B2
公开(公告)日：2012-07-10
申请号：US11715168
申请日：2007-03-07
申请人： Tae-Ho Jang
发明人： Tae-Ho Jang
IPC分类号： G06F13/24
CPC分类号： H04W80/02
摘要： A method for managing states by a Media Access Control (MAC) layer in a wireless network is disclosed. The method includes determining next occurable physical interrupts for each of the states; configuring a link of the states according to the determination result; transitioning to a state to be linked next if a physical interrupt occurs in each state; and transitioning to an initial state if an timer interrupt occurs in each state. The MAC layer transitions to the initial state if a physical interrupt occurs in a last state among the linked states. The physical interrupt occurs in association with a physical event, and the timer interrupt occurs in association with a timer event.
摘要翻译：公开了一种通过无线网络中的媒体访问控制（MAC）层来管理状态的方法。该方法包括确定每个状态的下一个可发生的物理中断; 根据确定结果配置状态的链接; 如果在每个状态下发生物理中断，则转换到要连接的状态; 并且如果在每个状态中发生定时器中断，则转换到初始状态。如果物理中断发生在链接状态中的最后状态，则MAC层转换到初始状态。物理中断与物理事件相关联，定时器中断与定时器事件相关联。

5. 发明授权

US06903348B2 Wafer holding apparatus for ion implanting system 失效
标题翻译：用于离子注入系统的晶片保持装置
公开(公告)号：US06903348B2
公开(公告)日：2005-06-07
申请号：US10302664
申请日：2002-11-21
申请人： Tae-Ho Jang , Jong-Oh Lee
发明人： Tae-Ho Jang , Jong-Oh Lee
IPC分类号： H01L21/265 , G01Q30/00 , H01J37/317 , H01J37/304
CPC分类号： H01J37/3171 , H01J2237/202 , H01J2237/304
摘要： An ion implanting system and a wafer holding apparatus therefor are provided. The ion implanting system includes x- and y-axis rotating parts; first and second angle measuring circuits; and a controller. The x-axis rotating part rotates a main surface of a wafer about an x-axis, and the y-axis rotating part rotates the main surface of the wafer about a y-axis. The first angle measuring circuit is rotated along with the main surface of the wafer and measures a tilt angle of the main surface of the wafer with respect to the x-axis. The second angle measuring means is rotated along with the main surface of the wafer and measures a rotating angle of the main surface of the wafer with respect to the y-axis. The controlling part, when the measured tilt angles are different from target tilt angles, controls the x- and y-axis rotating parts such that the measured tilt angles are equal to the target tilt angles. In the present invention, the ion implanting system and the wafer holding apparatus therefor can measure and monitor an incidence angle of an ion beam with respect to a tilted wafer.
摘要翻译：提供一种离子注入系统及其晶片保持装置。离子注入系统包括x轴和y轴旋转部分; 第一和第二角度测量电路; 和控制器。 x轴旋转部件围绕x轴旋转晶片的主表面，y轴旋转部件绕y轴旋转晶片的主表面。第一角度测量电路与晶片的主表面一起旋转并且测量晶片主表面相对于x轴的倾斜角度。第二角度测量装置与晶片的主表面一起旋转并且测量晶片的主表面相对于y轴的旋转角度。当测量的倾斜角度与目标倾斜角度不同时，控制部分控制x轴和y轴旋转部件，使得测量的倾斜角度等于目标倾斜角度。在本发明中，离子注入系统及其晶片保持装置可以测量和监测离子束相对于倾斜晶片的入射角。

6. 发明授权

US06774016B2 Silicon-on-insulator (SOI) substrate and method for manufacturing the same 有权
标题翻译：绝缘体上硅（SOI）衬底及其制造方法
公开(公告)号：US06774016B2
公开(公告)日：2004-08-10
申请号：US10076237
申请日：2002-02-13
申请人： Tae-Ho Jang
发明人： Tae-Ho Jang
IPC分类号： H01L2120
CPC分类号： H01L21/76243 , H01L21/76264 , H01L21/76267
摘要： Disclosed are an SOI substrate and a method for manufacturing the same. The SOI substrate comprises a silicon substrate including an active region defined by a field region. The field region includes a first oxygen-ion-injected isolation region having a first thickness and being formed under the active region. The center of the first region is at a first depth from a top surface of the silicon substrate. The field region of the SOI substrate further includes a second oxygen-ion-injected region having a second thickness greater than the first thickness. The second region is formed at sides of the active region and is also formed from a top surface of the silicon substrate. The center of the second ion injected region is at a second depth from the top surface of the silicon substrate. The first and second ion injected regions surround the active region for device isolation. The SOI substrate is formed by implementing two sequential ion injecting processes. Because the isolation of the active regions can be achieved by implementing the ion injecting process using the sacrificial blocking layer pattern, active regions having various shapes can be obtained with simple and less-costly methods.
摘要翻译：公开了一种SOI衬底及其制造方法。 SOI衬底包括包含由场区域限定的有源区的硅衬底。场区域包括具有第一厚度的第一氧离子注入隔离区，并形成在有源区下。第一区域的中心处于从硅衬底的顶表面开始的第一深度。 SOI衬底的场区域还包括具有大于第一厚度的第二厚度的第二氧离子注入区域。第二区域形成在有源区的侧面，并且还由硅衬底的顶表面形成。第二离子注入区域的中心距离硅衬底的顶表面的第二深度。第一和第二离子注入区域围绕有源区域进行器件隔离。通过实施两个顺序的离子注入工艺来形成SOI衬底。因为通过实施使用牺牲阻挡层图案的离子注入工艺可以实现活性区域的隔离，所以可以用简单且成本较低的方法获得具有各种形状的活性区域。

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