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    • 4. 发明申请
    • SYSTEM AND METHOD FOR PROVIDING MULTIMEDIA OBJECT LINKED TO MOBILE COMMUNICATION NETWORK
    • 提供链接到移动通信网络的多媒体对象的系统和方法
    • US20110076995A1
    • 2011-03-31
    • US12993577
    • 2009-05-08
    • Tae Yun Kim
    • Tae Yun Kim
    • H04W4/00
    • H04L67/36H04L65/1069H04L65/1083H04L65/1096H04M1/57H04M1/72547H04M3/42059H04M2203/2038H04W4/16
    • A system and method for providing a multimedia object linked to the mobile communication network is provided. The method includes: (a) the mobile device detecting a ringing signal or call signal of a call; (b) the mobile device extracting a phone number from the detected ringing signal or call signal; (c) the mobile device requesting the expression object server for a multimedia expression object corresponding to the extracted phone number; (d) the expression object server searching a multimedia expression object corresponding to the extracted phone number and transmitting it to the mobile device; and (e) the mobile device displaying the multimedia expression object at least one of the times for originating a call, receiving a call, in the middle of a call and at the end of a call.
    • 提供了一种用于提供链接到移动通信网络的多媒体对象的系统和方法。 该方法包括:(a)移动设备检测呼叫的振铃信号或呼叫信号; (b)移动设备从检测到的振铃信号或呼叫信号中提取电话号码; (c)请求表达对象服务器的移动装置对应于所提取的电话号码的多媒体表示对象; (d)表达对象服务器搜索与所提取的电话号码相对应的多媒体表达目标并将其发送到移动设备; 和(e)移动设备在呼叫中间和呼叫结束时,至少发出一个呼叫,接收呼叫,接收呼叫的时间中显示多媒体表达对象。
    • 6. 发明申请
    • LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 发光装置及其制造方法
    • US20080315223A1
    • 2008-12-25
    • US12145152
    • 2008-06-24
    • Tae Yun KimHyo Kun Son
    • Tae Yun KimHyo Kun Son
    • H01L33/00
    • H01L33/32H01L33/22
    • Provided is a light emitting device comprising a first conductive type semiconductor layer, an active layer, a semiconductor layer comprising Al, a high-concentration semiconductor layer, a low-mole InxGa1−xN layer, and a second conductive type semiconductor layer. The active layer is on the first conductive type semiconductor layer and emits light. The semiconductor layer comprising Al is on the active layer. The high-concentration semiconductor layer is on the semiconductor layer comprising Al. The low-mole InxGa1−xN layer is on the high-concentration semiconductor layer. The second conductive type semiconductor layer is on the low-mole InxGa1−xN layer.
    • 提供了一种发光器件,其包括第一导电类型半导体层,有源层,包含Al的半导体层,高浓度半导体层,低摩尔In x Ga 1-x N层和第二导电类型半导体层。 有源层位于第一导电型半导体层上并发光。 包含Al的半导体层在有源层上。 高浓度半导体层在包含Al的半导体层上。 低摩尔InxGa1-xN层位于高浓度半导体层上。 第二导电型半导体层位于低摩尔In x Ga 1-x N层上。
    • 8. 发明授权
    • Method for automatic control of a microwave oven
    • 微波炉自动控制方法
    • US5545880A
    • 1996-08-13
    • US407197
    • 1995-03-20
    • Jong Uk BuTae Yun Kim
    • Jong Uk BuTae Yun Kim
    • F24C7/02H05B6/68
    • H05B6/645
    • This invention relates to a method for automatic control of a microwave oven which can make precise cooking control available by classifying the cooking control into cases when cooking is completed below the boiling point of water, such as thawing or warming up, and cases when cooking is completed above the boiling point of water. For types of cooking which are complete without water boiling, the invention sets the initial cooking time period by determining the time it takes for the output voltage of a temperature detection sensor to reach a rise starting point. For types of cooking which include water boiling, the invention sets the initial cooking time period by determining the time it takes for the output voltage of the temperature detection sensor to reach a maximum rise point. The invention then sets an additional time period equivalent to the initial time period multiplied by a cooking constant corresponding to the type of cooking that is desired.
    • 微波炉的自动控制方法本发明涉及一种微波炉的自动控制方法,能够通过将烹调控制分类为在煮沸完成低于水的沸点以下的情况下进行精确的烹饪控制,例如解冻或加热,以及烹饪时的情况 完成在沸点以上的水。 对于没有水沸腾而完成的烹饪类型,本发明通过确定温度检测传感器的输出电压达到起始点所需的时间来设定初始烹饪时间段。 对于包括水沸腾的烹饪类型,本发明通过确定温度检测传感器的输出电压达到最大上升点所花费的时间来设定初始烹饪时间段。 然后,本发明设定等于初始时间段的附加时间段乘以与期望的烹饪类型相对应的烹饪常数。
    • 9. 发明授权
    • Clutter signal filtering in an ultrasound system
    • 超声系统中的杂波信号滤波
    • US08313435B2
    • 2012-11-20
    • US12404248
    • 2009-03-13
    • Tae Yun Kim
    • Tae Yun Kim
    • A61B8/00
    • G01S15/8981G01S7/5205G01S7/52063
    • Examples for filtering clutter signals from receive signals obtained in a Doppler mode in an ultrasound system are disclosed. The signal processing unit processes received echoes to provide 2-dimensional image data of the target object, the 2-dimensional image data being representative of a 2-dimensional image. A region of interest (ROI) is set on the 2-dimensional image of the target object, The signal processing unit obtains a Doppler mode image pixel data corresponding to the ROI. The signal processing unit sets filter cutoff frequencies based on characteristics of the Doppler mode image pixel data and filter the Doppler mode image pixel data with the set filter cutoff frequencies to output filtered pixel data with clutter signals filtered.
    • 公开了从超声系统中以多普勒模式获得的接收信号滤波杂波信号的示例。 信号处理单元处理接收回波以提供目标对象的二维图像数据,二维图像数据代表二维图像。 感兴趣区域(ROI)被设置在目标对象的二维图像上。信号处理单元获得对应于ROI的多普勒模式图像像素数据。 信号处理单元基于多普勒模式图像像素数据的特性设置滤波器截止频率,并用设定的滤波器截止频率对多普勒模式图像像素数据进行滤波,以输出滤波后的杂波信号的滤波像素数据。
    • 10. 发明授权
    • Light emitting device
    • 发光装置
    • US08258525B2
    • 2012-09-04
    • US13046520
    • 2011-03-11
    • Tae Yun Kim
    • Tae Yun Kim
    • H01L33/00
    • H01L33/325H01L21/0254H01L21/0262H01L33/12H01L33/32
    • A light emitting diode of one embodiment includes a light emitting device having a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on an upper layer of the plurality of N-type semiconductor layers, and a P-type semiconductor layer on the active layer. The first N-type semiconductor layer includes a first Si doped Nitride layer and the second N-type semiconductor layer includes a second Si doped Nitride layer. The first and second N-type semiconductor layers have a Si impurity concentration different from each other.
    • 一个实施例的发光二极管包括具有多个N型半导体层的发光器件,所述多个N型半导体层包括在第一N型半导体层上的第一N型半导体层和第二N型半导体层, 多个N型半导体层的上层和有源层上的P型半导体层。 第一N型半导体层包括第一Si掺杂氮化物层,第二N型半导体层包括第二Si掺杂氮化物层。 第一和第二N型半导体层具有彼此不同的Si杂质浓度。