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1. 发明申请

US20080093609A1 Silicon Nitride Layer for Light Emitting Device, Light Emitting Device Using the Same, and Method of Forming Silicon Nitride Layer for Light Emitting Device 审中-公开
标题翻译：发光装置用氮化硅层，使用该发光元件的发光装置及形成发光装置用氮化硅层的方法
公开(公告)号：US20080093609A1
公开(公告)日：2008-04-24
申请号：US11577333
申请日：2005-11-04
申请人： Tae Kim , Nae Park , Kyung Kim , Gun Sung
发明人： Tae Kim , Nae Park , Kyung Kim , Gun Sung
IPC分类号： H01L33/00 , H01L21/36
CPC分类号： H01L33/34 , C23C16/30 , C23C16/345 , H01L33/08 , H01L33/18 , Y10S977/773
摘要： Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
摘要翻译：提供了一种用于发光器件的氮化硅层，使用该氮化硅的发光器件以及用于形成发光器件的氮化硅层的方法。发光器件的氮化硅层包括在氮化硅衬底中形成的氮化硅衬底和硅纳米晶体。由氮化硅层制造的发光器件具有良好的发光效率，并且在包括短波长蓝色/紫色区域和近红外区域的可见区域中发光。

2. 发明申请

US20050224817A1 Silicon light emitting device and method of manufacturing the same 审中-公开
标题翻译：硅发光器件及其制造方法
公开(公告)号：US20050224817A1
公开(公告)日：2005-10-13
申请号：US11024949
申请日：2004-12-30
申请人： Nae Park , Tae Kim , Kyung Kim , Gun Sung
发明人： Nae Park , Tae Kim , Kyung Kim , Gun Sung
IPC分类号： H01L21/203 , H01L21/205 , H01L33/18 , H01L33/34 , H01L27/15
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , H01L33/08 , H01L33/18 , H01L33/26
摘要： Provided is to a silicon light emitting device and the method of manufacturing the same which comprises a silicon nano-dot light emitting layer; electrodes to apply voltage level to the silicon nano-dot light emitting layer; a SiCN on at least one region of the upper or lower side of the silicon nano-dot light emitting layer film to improve a light emitting efficiency.
摘要翻译：提供一种硅发光器件及其制造方法，其包括硅纳米点发光层; 用于向硅纳米点发光层施加电压电平的电极; 在硅纳米点发光层膜的上侧或下侧的至少一个区域上的SiCN，以提高发光效率。

3. 发明申请

US20050139847A1 Silicon-based light emitting diode 有权
标题翻译：硅基发光二极管
公开(公告)号：US20050139847A1
公开(公告)日：2005-06-30
申请号：US10923230
申请日：2004-08-20
申请人： Taeyoub Kim , Nae Park , Gun Sung
发明人： Taeyoub Kim , Nae Park , Gun Sung
IPC分类号： H01L33/10 , H01L33/24 , H01L33/34 , H01L33/46 , H01L33/00
CPC分类号： H01L33/34 , H01L33/105 , H01L33/24 , H01L33/465
摘要： A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A first reflecting portion faces with the first side of the active layer, and a second reflecting portion faces with the second side of the active layer. A first doping layer is interposed between the active layer and the first reflecting portion. A second doping layer is interposed between the active layer and the second reflecting portion. A first electrode is electrically connectable to the first doping layer, and a second electrode is electrically connectable to the second doping layer. Here, At least one of the first reflecting portion and the second reflecting portion has the DBR that is formed by alternately stacking two kinds of differently composed silicon-containing insulating layers and a gate.
摘要翻译：硅基发光二极管同时采用掺杂层和分布式布拉格反射器（DBR）。硅基发光二极管包括具有相对于第一侧和第二侧的有源层。第一反射部分面向有源层的第一侧，并且第二反射部分面向有源层的第二侧。第一掺杂层介于有源层和第一反射部分之间。第二掺杂层介于有源层和第二反射部分之间。第一电极可电连接到第一掺杂层，第二电极可电连接到第二掺杂层。这里，第一反射部和第二反射部中的至少一个具有通过交替堆叠两种不同构成的含硅绝缘层和栅极而形成的DBR。

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