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    • 3. 发明申请
    • SIMULATION DEVICE, SIMULATION SYSTEM, METHOD OF SIMULATION AND PROGRAM
    • 仿真器件,仿真系统,仿真和程序方法
    • US20130132046A1
    • 2013-05-23
    • US13638757
    • 2011-03-07
    • Akira MiyamotoMichihisa KoyamaKazuki Nakamura
    • Akira MiyamotoMichihisa KoyamaKazuki Nakamura
    • G06F17/50
    • G06F17/5009G01N15/0886
    • A simulation system (101) includes an X-ray CT device (11) that obtains a tomographic image of a porous sample, and a simulation device (14) that simulates a mercury intrusion method by processing a laminated tomographic image of the sample. The simulation device (14) includes a modeling means which processes the laminated tomographic image of the sample, and which models an internal structure of the sample, a minimum-diameter obtaining means that obtains a minimum entrance diameter when mercury enters in a pore of the sample at a predetermined pressure based on a surface energy of the sample and a pressure, and a means that simulates a liquid entering in the interior of the pore from one surface of the sample based on a diameter of the pore of the modeled sample and the minimum entrance diameter.
    • 模拟系统(101)包括获得多孔样品的断层图像的X射线CT装置(11),以及通过处理样品的层叠断层图像来模拟水银侵入方法的模拟装置(14)。 模拟装置(14)包括:模拟装置,其处理样品的层叠断层图像,并对样品的内部结构进行建模;最小直径获取装置,当汞进入到所述样品的孔中时获得最小入口直径 基于样品的表面能和压力的预定压力的样品,以及基于样品的孔的直径来模拟从样品的一个表面进入孔的内部的液体的装置,以及 最小入口直径
    • 9. 发明授权
    • Composite sinter of silicon nitride/boron nitride and method for
manufacturing thereof
    • 氮化硅/氮化硼的复合烧结体及其制造方法
    • US4412008A
    • 1983-10-25
    • US234939
    • 1981-02-11
    • Akira MiyamotoMasaru IshikawaMasaaki NishiKenki IshizawaAkira Shiranita
    • Akira MiyamotoMasaru IshikawaMasaaki NishiKenki IshizawaAkira Shiranita
    • C04B35/583C04B35/591C04B35/58
    • C04B35/591
    • A composite sinter of silicon nitride/boron nitride, which consists essentially of, in weight percentage, silicon nitride within the range of from 60 to 97% and boron nitride within the range of from 3 to 40%, and wherein said boron nitride is present as a dispersed phase in the network of said silicon nitride; said composite sinter of silicon nitride/boron nitride being manufactured by the steps of: kneading a silicon powder within the range of from 47.3 to 95.1 wt.% and a boron nitride powder within the range of from 4.9 to 52.7 wt. %, as raw materials, with the use of an organic solvent solution containing a dispersant and a binder; press-forming the resultant kneaded mixture to prepare a green compact; sintering said green compact in a non-oxidizing atmosphere at a temperature within the range of from 1,100.degree. to 1,300.degree. C. to prepare a sinter having a strength permitting machining; machining said sinter into prescribed dimensions; and sintering again the resultant machined sinter in a nitrogen atmosphere at a temperature within the range of from 1,250.degree. to 1,450.degree. C. to nitrify the same, thereby improving strength and thermal shock resistance of said sinter.
    • 氮化硅/氮化硼的复合烧结体,其重量百分比基本上由60至97%的氮化硅和3至40%的氮化硼组成,并且其中存在所述氮化硼 作为所述氮化硅网络中的分散相; 所述氮化硅/氮化硼的复合烧结体通过以下步骤制造:将硅粉末在47.3至95.1重量%的范围内捏合并且硼氮化物粉末在4.9至52.7重量%的范围内。 %,作为原料,使用含有分散剂和粘合剂的有机溶剂溶液; 压制所得捏合混合物以制备生坯; 在非氧化性气氛中在1100〜1300℃的温度下烧结所述生坯,制备具有允许加工强度的烧结体; 将烧结体加工成规定的尺寸; 并在氮气气氛中再次烧结得到的机械加工的烧结体,温度范围为1250℃至1450℃,对其进行硝化,从而提高了所述烧结体的强度和耐热冲击性。