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1. 发明授权

US4839252A Electrophotographic photoreceptor 失效
标题翻译：电子照相感光体
公开(公告)号：US4839252A
公开(公告)日：1989-06-13
申请号：US160930
申请日：1988-02-26
申请人： Tadaichi Murata , Tsuneo Isomura , Kenichi Fujimori , Fuminori Tsuruta , Kazuhito Dohi , Masahiro Horigome , Yoshitarou Nakayama , Sachio Oomori
发明人： Tadaichi Murata , Tsuneo Isomura , Kenichi Fujimori , Fuminori Tsuruta , Kazuhito Dohi , Masahiro Horigome , Yoshitarou Nakayama , Sachio Oomori
IPC分类号： G03G5/06
CPC分类号： G03G5/0668 , G03G5/0616
摘要： An electrophotographic photoreceptor having a photosensitive layer containing a butadiene compound represented by general formula ##STR1## wherein A.sub.1 to A.sub.4 are alkyl group, and a hydrazone compound represented by general formula ##STR2## wherein B.sub.1 and B.sub.2 are alkyl, phenyl, benzyl or methoxyphenyl groups, R.sub.1 is hydrogen, alkyl, alkoxy or benzyloxy groups and R.sub.2 is alkyl, phenyl or benzyl groups. The photoreceptor can suppress the photo-deterioration due to cyclic operation and is useful in the field of copying printers.
摘要翻译：具有含有通式“IMAGE”表示的丁二烯化合物的光敏层的电子照相感光体，其中A1至A4为烷基，和由通式“IMAGE”表示的腙化合物，其中B1和B2为烷基，苯基，苄基或甲氧基苯基 R 1是氢，烷基，烷氧基或苄氧基，R 2是烷基，苯基或苄基。感光体可以抑制由于循环操作引起的光劣化，并且在复印打印机领域是有用的。

2. 发明授权

US4912000A Electrophotographic photoreceptor 失效
标题翻译：电子照相感光体
公开(公告)号：US4912000A
公开(公告)日：1990-03-27
申请号：US302931
申请日：1989-01-30
申请人： Minoru Kumakura , Isao Kaetsu , Masahiro Horigome , Tsuneo Isomura , Tomio Yoneyama , Tadaichi Murata
发明人： Minoru Kumakura , Isao Kaetsu , Masahiro Horigome , Tsuneo Isomura , Tomio Yoneyama , Tadaichi Murata
IPC分类号： G03G5/14 , G03G5/147
CPC分类号： G03G5/1476 , G03G5/14773
摘要： An electrophotographic photoreceptor comprises an electrically conductive support, a photoconductive layer provided thereon, and a protective layer coated on the photoconductive layer, wherein the protective layer comprises a product of uncatalized hydrolysis of a composition essentially consisting of at least one specific epoxysilane compound, at least one specific alkylalkoxysilane compound, and at least one specific aminosilane compound. The photoreceptor is very useful in that it is free from wear due to friction with paper and cleaning members, keeps high resolving power, and is sufficiently proof against continuous copying under conditions of high temperature and high humidity.
摘要翻译：电子照相感光体包括导电支撑体，设置在其上的光电导层和涂覆在光电导层上的保护层，其中保护层包含基本由至少一种特定环氧硅烷化合物组成的组合物的非催化水解产物，至少一种特定的烷基烷氧基硅烷化合物和至少一种特定的氨基硅烷化合物。感光体是非常有用的，因为它与纸和清洁部件的摩擦没有磨损，保持高的分辨能力，并且足够证明在高温和高湿度的条件下连续复印。

3. 发明申请

US20110318919A1 SURFACE TREATMENT FOR A FLUOROCARBON FILM 有权
标题翻译：荧光膜的表面处理
公开(公告)号：US20110318919A1
公开(公告)日：2011-12-29
申请号：US13138242
申请日：2010-01-22
申请人： Masahiro Horigome , Takuya Kurotori , Yasuo Kobayashi , Takaaki Matsuoka , Toshihisa Nozawa
发明人： Masahiro Horigome , Takuya Kurotori , Yasuo Kobayashi , Takaaki Matsuoka , Toshihisa Nozawa
IPC分类号： H01L21/768 , H01L21/263
CPC分类号： H01L21/32051 , H01L21/02115 , H01L21/02274 , H01L21/2855 , H01L21/3105 , H01L21/3146 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76864
摘要： A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在绝缘层上退火绝缘层并形成包含金属元件的阻挡层。绝缘层包括碳氟化合物（CFx）膜。在退火步骤之后通过高温溅射工艺形成阻挡层。

4. 发明授权

US08765605B2 Surface treatment for a fluorocarbon film 有权
标题翻译：氟碳膜的表面处理
公开(公告)号：US08765605B2
公开(公告)日：2014-07-01
申请号：US13138242
申请日：2010-01-22
申请人： Masahiro Horigome , Takuya Kurotori , Yasuo Kobayashi , Takaaki Matsuoka , Toshihisa Nozawa
发明人： Masahiro Horigome , Takuya Kurotori , Yasuo Kobayashi , Takaaki Matsuoka , Toshihisa Nozawa
IPC分类号： H01L21/44
CPC分类号： H01L21/32051 , H01L21/02115 , H01L21/02274 , H01L21/2855 , H01L21/3105 , H01L21/3146 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76864
摘要： A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在绝缘层上退火绝缘层并形成包含金属元件的阻挡层。绝缘层包括碳氟化合物（CFx）膜。在退火步骤之后通过高温溅射工艺形成阻挡层。

5. 发明申请

US20100090315A1 FILM FORMING METHOD, FILM FORMING APPARATUS, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：胶片成型方法，成膜装置，储存介质和半导体装置
公开(公告)号：US20100090315A1
公开(公告)日：2010-04-15
申请号：US12517160
申请日：2007-11-30
申请人： Masahiro Horigome
发明人： Masahiro Horigome
IPC分类号： H01L23/48 , H01L21/31 , C23C16/00
CPC分类号： C23C16/36 , C23C16/0272 , H01L21/0212 , H01L21/02274 , H01L21/3127 , H01L21/76811
摘要： Provided is a film forming method comprising: placing a substrate on a loading portion inside a processing chamber; supplying a gas for generating plasma, which is excited by microwaves, into the processing chamber; evacuating an inside of the processing chamber; supplying a C5F8 gas into the processing chamber; supplying microwaves into the processing chamber from a planar antenna member, which is disposed on an upper part of the processing chamber to face the loading portion and in which a plurality of slots are formed along a circumferential direction, and plasmatizing the gas inside the processing chamber; forming a fluorine-added carbon film on the substrate by the plasmatized gas; and applying a biasing high frequency power to the loading portion while forming the fluorine-added carbon film on the substrate so that the biasing high frequency power of 0.32 W/cm2 or less is applied on the substrate per unit area.
摘要翻译：提供一种成膜方法，包括：将基板放置在处理室内的装载部分上; 将由微波激发的等离子体产生的气体供给到处理室中; 抽出处理室的内部; 将C5F8气体供应到处理室中; 从平面天线构件将微波提供到处理室中，该平面天线构件设置在处理室的上部以面对装载部分，并且沿圆周方向形成有多个狭槽，并且使处理室内的气体均质化 ; 通过等离子体化气体在基板上形成氟加成膜; 并且在衬底上形成氟加成碳膜的同时向加载部分施加偏置高频功率，使得每单位面积的衬底上施加0.32W / cm 2以下的偏置高频功率。

6. 发明申请

US20090085172A1 Deposition Method, Deposition Apparatus, Computer Readable Medium, and Semiconductor Device 审中-公开
标题翻译：沉积方法，沉积装置，计算机可读介质和半导体装置
公开(公告)号：US20090085172A1
公开(公告)日：2009-04-02
申请号：US12238692
申请日：2008-09-26
申请人： Masahiro Horigome , Shigekazu Hirose
发明人： Masahiro Horigome , Shigekazu Hirose
IPC分类号： H01L21/4763 , C23C14/32 , H01L23/58 , G06F19/00
CPC分类号： C23C16/347 , C23C16/45565 , C23C16/511 , H01J37/32706 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/318 , H01L21/76807 , H01L21/76826 , H01L21/76834
摘要： A deposition method includes steps of placing a substrate on a susceptor in a process chamber; supplying to the process chamber a source gas including an organic compound and a plasma gas for facilitating activation of the source gas into plasma; evacuating the process chamber to a reduced pressure; generating plasma of the plasma gas and the source gas in the process chamber to deposit a barrier film including carbon on the substrate; and applying high frequency bias electric power to the susceptor during the plasma generating step.
摘要翻译：沉积方法包括将基板放置在处理室中的基座上的步骤; 向处理室供应包括有机化合物和等离子体气体的源气体，以促进源气体活化成等离子体; 将处理室排空至减压; 产生处理室中的等离子体气体和源气体的等离子体，以在衬底上沉积包含碳的阻挡膜; 以及在所述等离子体生成步骤期间向所述基座施加高频偏置电力。

7. 发明申请

US20120190211A1 FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INSULATING FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：薄膜成型方法，半导体器件制造方法，绝缘膜和半导体器件
公开(公告)号：US20120190211A1
公开(公告)日：2012-07-26
申请号：US13496563
申请日：2010-09-09
申请人： Hirokazu Ueda , Yusuke Ohsawa , Masahiro Horigome
发明人： Hirokazu Ueda , Yusuke Ohsawa , Masahiro Horigome
IPC分类号： H01L21/31 , H01L21/30
CPC分类号： C23C16/401 , C23C16/345 , C23C16/45542 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/28194 , H01L29/66181
摘要： In a film forming method, firstly, a processing target substrate W as a base of a semiconductor device is held on a mounting table 34 by an electrostatic chuck. Then, a film forming gas is adsorbed onto the processing target substrate W (a gas adsorption process) ((A) of FIG. 6). Thereafter, the inside of the processing chamber 32 is evacuated in order to remove residues of the film forming gas ((B) of FIG. 6). Upon the completion of the first exhaust process, a plasma process using microwave is performed ((C) of FIG. 6). Upon the completion of the plasma process, the inside of the processing chamber 32 is evacuated in order to remove an unreacted reactant gas and the like ((D) of FIG. 6). These series of steps (A) to (D) are repeated in this sequence until a desired film thickness is obtained.
摘要翻译：在成膜方法中，首先，作为半导体装置的基底的处理对象基板W由静电卡盘保持在安装台34上。然后，成膜气体被吸附到处理对象基板W（气体吸附工序）（图6的（A））上。此后，为了除去成膜气体的残留物（图6的（B）），处理室32的内部被抽真空。在第一排气处理完成时，进行使用微波的等离子体处理（图6的（C））。在完成等离子体处理之后，为了除去未反应的反应气体等（图6的（D）），将处理室32的内部抽真空。以该顺序重复这些一系列步骤（A）至（D），直至获得所需的膜厚度。

8. 发明申请

US20090134518A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20090134518A1
公开(公告)日：2009-05-28
申请号：US12305049
申请日：2007-06-06
申请人： Masahiro Horigome
发明人： Masahiro Horigome
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53238 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76843 , H01L21/76846 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention is provided with a substrate; an insulating film made of a fluorine-containing carbon film and formed on the substrate; a copper wiring buried in the insulating film; and a barrier film formed between the insulating film and the copper wiring. The barrier film includes a first film made of titanium for suppressing a diffusion of fluorine, and a second film made of tantalum for suppressing a diffusion of copper and formed between the first film and the copper wiring.
摘要翻译：本发明的半导体器件具有基板; 由含氟碳膜制成的绝缘膜，形成在基板上; 埋在绝缘膜中的铜线; 以及形成在绝缘膜和铜布线之间的阻挡膜。阻挡膜包括由钛制成的用于抑制氟的扩散的第一膜，以及由钽制成的第二膜，用于抑制铜扩散并形成在第一膜和铜布线之间。

9. 发明授权

US4997738A Electrophotographic photoreceptor having silicate with perfluoroalkyl groups in protective layer 失效
标题翻译：具有保护层中全氟烷基的硅酸盐的电子照相感光体
公开(公告)号：US4997738A
公开(公告)日：1991-03-05
申请号：US441251
申请日：1989-11-27
申请人： Minoru Kumakura , Mitsuhiro Yoshitome , Masaru Wakatabe , Masahiro Horigome , Kazuhiko Shima
发明人： Minoru Kumakura , Mitsuhiro Yoshitome , Masaru Wakatabe , Masahiro Horigome , Kazuhiko Shima
IPC分类号： G03G5/147
CPC分类号： G03G5/14773 , G03G5/14708
摘要： An electrophotographic photoreceptor comprises a photoconductive layer having a protective layer disposed thereon, said protective layer being formed by dehydrocondensation of the hydrolyzate of a perfluoroalkyl silane coupling agent, or the hydrolyzate of a mixture of a perfluoroalkyl silane coupling agent and a silane coupling agent. The photoreceptor is very useful in that it can exhibit a high performance even in an environment at a higher temperature and at a higher humidity and that it has a high resistance to the abrasion with a great number of sheets being printed and with the cleaning members and that it is capable of preserving a high resolution without any image blurring.
摘要翻译：电子照相感光体包括其上设置有保护层的光电导层，所述保护层通过全氟烷基硅烷偶联剂的水解产物的脱水或全氟烷基硅烷偶联剂的混合物的水解产物和硅烷偶联剂形成。感光体是非常有用的，因为即使在较高温度和较高湿度的环境下也能显示出高的性能，并且它具有高的耐磨性，同时印刷了大量的纸张，并且与清洁部件和它能够保持高分辨率而没有任何图像模糊。

10. 发明申请

US20100244204A1 FILM FORMING METHOD, FILM FORMING APPARATUS, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：胶片成型方法，成膜装置，储存介质和半导体装置
公开(公告)号：US20100244204A1
公开(公告)日：2010-09-30
申请号：US12301902
申请日：2007-05-11
申请人： Takaaki Matsuoka , Masahiro Horigome
发明人： Takaaki Matsuoka , Masahiro Horigome
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： H01L21/3127 , C23C16/26 , C23C16/45565 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01L21/0212 , H01L21/02274
摘要： Provided is a technology capable of obtaining a fluorine-containing carbon film having a good leakage property, coefficient of thermal expansion and mechanical strength. The fluorine-containing carbon film is formed by using active species obtained by activating a C5F8 gas and a hydrogen gas. Fluorine in the fluorine-containing carbon film comes off together with H so that the amount of F decreases, thereby accelerating the polymerization. As a result, a C-dangling bond in the fluorine-containing carbon is decreased and a leakage current is reduced. Further, as the polymerization accelerates, the film gets stronger, so that the fluorine-containing carbon film having a high mechanical strength such as a high elasticity or a high hardness can be obtained.
摘要翻译：提供了能够获得具有良好的泄漏特性，热膨胀系数和机械强度的含氟碳膜的技术。通过使用通过活化C5F8气体和氢气而获得的活性物质形成含氟碳膜。含氟碳膜中的氟与H一起脱落，使F的量降低，从而促进聚合。结果，含氟碳中的C悬空键降低，漏电流降低。此外，随着聚合加速，膜变得更强，从而可以获得具有高机械强度如高弹性或高硬度的含氟碳膜。

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