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1. 发明申请

US20080238550A1 POWER AMPLIFIER AND TRANSMISSION AND RECEPTION SYSTEM 有权
标题翻译：功率放大器和传输和接收系统
公开(公告)号：US20080238550A1
公开(公告)日：2008-10-02
申请号：US11857737
申请日：2007-09-19
申请人： Tadahiro SASAKI , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
发明人： Tadahiro SASAKI , Kazuhide Abe , Kazuhiko Itaya , Hideyuki Funaki
IPC分类号： H03F3/16 , H03F3/68
CPC分类号： H03F3/604 , H01L21/823425 , H01L27/088 , H03F1/3205 , H03F3/16 , H03F3/607 , H03F3/72 , H03F2200/108 , H03F2200/451 , H03F2200/468 , H03F2200/543 , H03F2200/78 , H03F2203/7236
摘要： A power amplifier includes: a first multi-finger FET formed on a semiconductor substrate; a second multi-finger FET formed on the semiconductor substrate; a first temperature detector which detects a channel temperature of the first FET; a second temperature detector which detects a channel temperature of the second FET; a third temperature detector which detects a temperature of the semiconductor substrate; a first detection circuit detecting a difference between an output of the first temperature detector and an output of the third temperature detector and converting the difference to thermoelectromotive force; a second detection circuit detecting a difference between an output of the second temperature detector and the output of the third temperature detector and converting the difference to thermoelectromotive force; and a comparator comparing outputs of the first and second detection circuits with each other to turn on one of the first and second switches and turn off the other.
摘要翻译：功率放大器包括：形成在半导体衬底上的第一多指FET; 形成在半导体衬底上的第二多指FET; 第一温度检测器，其检测第一FET的通道温度; 第二温度检测器，其检测第二FET的通道温度; 第三温度检测器，其检测半导体衬底的温度; 第一检测电路，检测第一温度检测器的输出和第三温度检测器的输出之间的差异，并将差值转换为热电动势; 第二检测电路，检测第二温度检测器的输出与第三温度检测器的输出之间的差异，并将差值转换为热电动势; 以及比较器，将第一和第二检测电路的输出彼此进行比较，以打开第一和第二开关中的一个并且关闭另一个。

2. 发明申请

US20080061871A1 POWER AMPLIFIER 失效
标题翻译：功率放大器
公开(公告)号：US20080061871A1
公开(公告)日：2008-03-13
申请号：US11687770
申请日：2007-03-19
申请人： Kazuhide ABE , Tadahiro SASAKI , Kazuhiko ITAYA , Hideyuki FUNAKI
发明人： Kazuhide ABE , Tadahiro SASAKI , Kazuhiko ITAYA , Hideyuki FUNAKI
IPC分类号： H03F1/14
CPC分类号： H03F3/2176 , H03F1/02 , H03F3/245 , H03F2200/366 , H03F2200/391 , H03F2203/21178 , H03G1/0088
摘要： A power amplifier includes: a plurality of field effect transistors connected in parallel and each having a first and second ends, the first end being connected to ground; an amplifying unit which includes at least one of an inductor, a capacitor and a band pass filter and has a third and fourth ends, the third end being connected to the second ends of the field effect transistors, and the fourth end outputting an amplified output signal; and an amplitude controller which sends control signals respectively to gates of the field effect transistors to turn on or off the field effect transistors based on an address signal for performing selection on the field effect transistors and a clock signal. Channel widths of the field effect transistors are different from each other.
摘要翻译：功率放大器包括：多个并联连接的场效应晶体管，每个具有第一和第二端，所述第一端连接到地; 放大单元，其包括电感器，电容器和带通滤波器中的至少一个，并具有第三和第四端，第三端连接到场效应晶体管的第二端，第四端输出放大的输出信号; 以及幅度控制器，其基于用于对场效应晶体管进行选择的地址信号和时钟信号，分别向场效应晶体管的栅极发送控制信号以导通或关闭场效应晶体管。场效应晶体管的沟道宽度彼此不同。

3. 发明申请

US20120061768A1 POWER AMPLIFIER 失效
标题翻译：功率放大器
公开(公告)号：US20120061768A1
公开(公告)日：2012-03-15
申请号：US13050545
申请日：2011-03-17
申请人： Tadahiro SASAKI , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
发明人： Tadahiro SASAKI , Kazuhide Abe , Atsuko Iida , Kazuhiko Itaya
IPC分类号： H01L27/092
CPC分类号： H01L27/088 , H01L21/823493 , H01L27/0207 , H01L27/0922 , H01L29/41758 , H01L29/4238 , H01L29/78
摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.
摘要翻译：根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。第一生长环栅极结构由半导体层限制并进行功率放大操作。多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离结构从周围部分。

4. 发明申请

US20130256009A1 EBG STRUCTURE, SEMICONDUCTOR DEVICE, AND PRINTED CIRCUIT BOARD 有权
标题翻译： EBG结构，半导体器件和印刷电路板
公开(公告)号：US20130256009A1
公开(公告)日：2013-10-03
申请号：US13677840
申请日：2012-11-15
申请人： Tadahiro SASAKI , Kazuhiko Itaya , Hiroshi Yamada
发明人： Tadahiro SASAKI , Kazuhiko Itaya , Hiroshi Yamada
IPC分类号： H05K1/16 , H05K1/09
CPC分类号： H05K1/162 , H01L2224/16225 , H01L2924/0002 , H05K1/0236 , H05K1/09 , H05K1/185 , H05K2201/0715 , H01L2924/00
摘要： An EBG structure according to an embodiment includes an electrode unit made of a first conductor and provided with a space, a patch unit provided approximately parallel to the electrode unit and made of a second conductor, an insulating layer provided between the electrode unit and the patch unit, a first via provided between the patch unit and the electrode unit in the insulating layer and connected to the patch unit and the electrode unit, and a second via provided between the patch unit and the space in the insulating layer, connected to the patch unit, and not connected to the electrode unit.
摘要翻译：根据实施例的EBG结构包括由第一导体制成并且设置有空间的电极单元，设置成大致平行于电极单元并由第二导体制成的贴片单元，设置在电极单元和贴片之间的绝缘层单元，在所述绝缘层中的所述贴片单元和所述电极单元之间设置并连接到所述贴片单元和所述电极单元的第一通孔，以及设置在所述贴片单元和所述绝缘层中的与所述贴片单元，而不连接到电极单元。

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