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1. 发明授权

US5656847A Led lamp arrangement and led matrix display panel 失效
标题翻译： LED灯具排列和led矩阵显示面板
公开(公告)号：US5656847A
公开(公告)日：1997-08-12
申请号：US394833
申请日：1995-02-27
申请人： Tadahiro Okazaki , Yoshinori Koike
发明人： Tadahiro Okazaki , Yoshinori Koike
IPC分类号： H01L25/13 , H01L33/44 , H01L31/0203
CPC分类号： H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2924/12041
摘要： An LED lamp arrangement has at least one pair of lead terminals, an LED element attached to an end of one lead terminal, a metal wire connecting the LED element to the other lead terminal, a light-transmitting molded portion sealingly enclosing the ends of the lead terminals and the LED element, and a black coating on a rear surface of the molded portion to enhance recognition of the lighted condition of the LED lamp.
摘要翻译： LED灯装置具有至少一对引线端子，附接到一个引线端子的端部的LED元件，将LED元件连接到另一个引线端子的金属线，密封地封装所述引线端子的端部的透光模制部分引线端子和LED元件，以及在模制部分的后表面上的黑色涂层，以增强对LED灯的点亮状态的识别。

2. 发明授权

US08581367B2 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center 有权
公开(公告)号：US08581367B2
公开(公告)日：2013-11-12
申请号：US12230577
申请日：2008-09-02
申请人： Tadahiro Okazaki
发明人： Tadahiro Okazaki
IPC分类号： H01L29/861
CPC分类号： H01L29/417 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/6609 , H01L29/66204 , H01L29/861
摘要： A semiconductor device includes a substrate having first main face having rectangular shape, a first electrode provided at the center on first main face of substrate, first electrode is made of conducting material harder than substrate, and a second electrode provided along at least a part of the periphery on first main face so as to surround first electrode, second electrode is integrated with first electrode by the same conducting material as that of the first electrode, and second electrode has a thinner film thickness than that of the first electrode.

3. 发明申请

US20070221940A1 LED DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译： LED装置及其制造方法
公开(公告)号：US20070221940A1
公开(公告)日：2007-09-27
申请号：US11687407
申请日：2007-03-16
申请人： Tadahiro Okazaki
发明人： Tadahiro Okazaki
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/62 , H01L33/60 , H01L2224/32013 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01057 , H01L2924/01322 , H01L2924/00014 , H01L2924/00
摘要： An LED device includes an LED chip die-bonded to a frame with a die-bonding material, wherein the die-bonding material contains Ag, a fine white powder, and solder particles. The LED device is superior in both reflectance and bonding strength because of the use of the die-bonding material.
摘要翻译： LED装置包括将芯片与芯片接合材料模压接合的LED芯片，其中芯片接合材料包含Ag，细白色粉末和焊料颗粒。由于使用了芯片接合材料，因此LED装置的反射率和接合强度都优异。

4. 发明授权

US07075116B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07075116B2
公开(公告)日：2006-07-11
申请号：US10764514
申请日：2004-01-27
申请人： Tadahiro Okazaki
发明人： Tadahiro Okazaki
IPC分类号： H01L33/00
CPC分类号： H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： An ultraviolet ray emitting element, a blue color converting layer containing a blue color light emitting fluorescent material that is excited by ultraviolet rays and emits blue light, a green color converting layer as the same and a red color converting layer as the same are prepared, and the blue color converting layer, the green color converting layer and the red color converting layer are stacked on the ultraviolet ray emitting element in this order. Consequently, it is possible to easily obtain white light that has high color rendering properties. In order to obtain white color that exerts high color rendering properties, the average particle sizes of the fluorescent materials are preferably made greater in the order of the blue color light emitting fluorescent material, the green color light emitting fluorescent material and the red color light emitting fluorescent material.
摘要翻译：制备紫外线发射元件，包含由紫外线激发并发出蓝光的蓝色发光荧光材料的蓝色转换层，与其相同的绿色转换层和红色转换层，并且蓝色转换层，绿色转换层和红色转换层依次堆叠在紫外线发射元件上。因此，可以容易地获得具有高显色性能的白光。为了获得发挥高显色特性的白色，荧光材料的平均粒径优选按蓝色发光荧光材料，绿色发光荧光材料和红色发光的顺序更大荧光材料。

5. 发明申请

US20090057836A1 Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center 有权
标题翻译：具有电极膜的半导体器件，其中周边的膜厚度比中心的膜厚度薄
公开(公告)号：US20090057836A1
公开(公告)日：2009-03-05
申请号：US12230577
申请日：2008-09-02
申请人： Tadahiro Okazaki
发明人： Tadahiro Okazaki
IPC分类号： H01L29/861
CPC分类号： H01L29/417 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/6609 , H01L29/66204 , H01L29/861
摘要： A semiconductor device includes a substrate having first main face having rectangular shape, a first electrode provided at the center on first main face of substrate, first electrode is made of conducting material harder than substrate, and a second electrode provided along at least a part of the periphery on first main face so as to surround first electrode, second electrode is integrated with first electrode by the same conducting material as that of the first electrode, and second electrode has a thinner film thickness than that of the first electrode.
摘要翻译：半导体器件包括具有矩形形状的第一主面的基板，设置在基板的第一主面的中心的第一电极，第一电极由比基板硬的导电材料制成，第二电极沿着至少一部分在第一主面上的周边以围绕第一电极，第二电极通过与第一电极相同的导电材料与第一电极成一体，第二电极具有比第一电极薄的膜厚度。

6. 发明授权

US06642545B2 Semiconductor light emitting device 有权
公开(公告)号：US06642545B2
公开(公告)日：2003-11-04
申请号：US10140259
申请日：2002-05-08
申请人： Tadahiro Okazaki
发明人： Tadahiro Okazaki
IPC分类号： H01L3300
CPC分类号： H01L25/0756 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/00 , H01L2224/05599
摘要： A semiconductor light emitting device including a first semiconductor light emitting chip in which a first semiconductor light emitting layer is formed on a first substrate, a second semiconductor light emitting chip in which a second semiconductor light emitting layer is formed on a second substrate, and a bonding material for bonding the first semiconductor light emitting chip and the second semiconductor light emitting chip to each other in a stacked state.

7. 发明申请

US20090026468A1 Semiconductor Light Emitting Element 有权
公开(公告)号：US20090026468A1
公开(公告)日：2009-01-29
申请号：US12224524
申请日：2007-02-22
申请人： Mitsuhiko Sakai , Tadahiro Okazaki , Ken Nakahara
发明人： Mitsuhiko Sakai , Tadahiro Okazaki , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L33/32
摘要： In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n. t ≥ ρ   J 0  e 4  γκ B  T · W  ( L - W ) Formula   1 where L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, γ is diode ideality factor, κB is Boltzmann constant, ρ is specific resistance of the n-type semiconductor layer.

8. 发明授权

US07781791B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US07781791B2
公开(公告)日：2010-08-24
申请号：US12224524
申请日：2007-02-22
申请人： Mitsuhiko Sakai , Tadahiro Okazaki , Ken Nakahara
发明人： Mitsuhiko Sakai , Tadahiro Okazaki , Ken Nakahara
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L33/32
摘要： In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n. t ≥ ρ ⁢ ⁢ J 0 ⁢ e 4 ⁢ γκ B ⁢ T · W ⁡ ( L - W ) Formula ⁢ ⁢ 1 where L is width of the n-type layer in a direction different from the one direction, T is absolute temperature, W is width of the n-side electrode in a direction different from the one direction, J0 is current density at the contact portion between the n-side electrode and the n-type layer, e is elementary charge, γ is diode ideality factor, κB is Boltzmann constant, ρ is specific resistance of the n-type semiconductor layer.
摘要翻译：在半导体发光元件中，依次层叠基板上的p型层（220），有源层（230）和n型层（240）。 n型层（240）形成有一个方向的宽度与n型层（240）的宽度相等的矩形n侧电极（241）。 n型层（240）的厚度t满足下式1。半导体发光元件包括在层叠方向上延伸并形成有多个突起（271）的侧表面（270）。假设来自有源层（230）的光的波长为λ，并且n型层（240）或p型层（220）的折射率为n，底部宽度的平均WA 的投影设定为满足WA≥λ/ n。 t≥＆rgr; ≠J 0 e4γ＆kgr; B T·W⁡（L-W）公式1其中L是与一个方向不同的方向的n型层的宽度，T是绝对温度，W是n侧电极的宽度方向不同于一个方向，J0是n侧电极和n型层之间的接触部分处的电流密度，e是基本电荷，γ是二极管理想因子，kgr; B是玻尔兹曼常数，＆rgr; 是n型半导体层的电阻率。

9. 发明申请

US20080048205A1 Optical semiconductor device and method for making the same 审中-公开
标题翻译：光半导体器件及其制造方法
公开(公告)号：US20080048205A1
公开(公告)日：2008-02-28
申请号：US11894315
申请日：2007-08-21
申请人： Tadahiro Okazaki
发明人： Tadahiro Okazaki
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01078 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： An optical semiconductor device includes an insulating substrate provided with a first electrode and a second electrode each extending from the obverse surface onto the reverse surface of the substrate. The first electrode includes a die-bonding pad extending on the obverse surface of the substrate and a first terminal extending on the reverse surface of the substrate. The second electrode includes a wire-bonding pad extending on the obverse surface of the substrate and a second terminal extending on the reverse surface of the substrate. An LED chip is bonded to the die-bonding pad of the first electrode. The LED chip is also connected to the wire-bonding pad of the second electrode by a wire. The wire and the LED chip are enclosed by a resin package. The wire-bonding pad has a thickness of 10 μm-30 μm, and the second terminal has a thickness of 5 μm-9 μm.
摘要翻译：光学半导体器件包括设置有第一电极和第二电极的绝缘基板，每个第一电极和第二电极从正面延伸到基板的反面上。第一电极包括在基板的正面上延伸的芯片接合焊盘和在基板的反面上延伸的第一端子。第二电极包括在基板的正面上延伸的引线接合焊盘和在基板的反面上延伸的第二端子。将LED芯片接合到第一电极的芯片焊盘。 LED芯片也通过导线连接到第二电极的引线接合焊盘。电线和LED芯片被树脂封装。引线接合垫的厚度为10μm-30μm，第二端的厚度为5μm-9μm。

10. 发明授权

US06670648B2 Semiconductor light-emitting device having a reflective case 有权
标题翻译：具有反射壳体的半导体发光器件
公开(公告)号：US06670648B2
公开(公告)日：2003-12-30
申请号：US10196205
申请日：2002-07-17
申请人： Shinji Isokawa , Tadahiro Okazaki
发明人： Shinji Isokawa , Tadahiro Okazaki
IPC分类号： H01L2922
CPC分类号： H01L33/60 , H01L33/486 , H01L2224/48091 , H01L2224/48227 , H01L2933/0091 , H01L2924/00014
摘要： A semiconductor light-emitting device has a semiconductor light-emitting element 3 mounted on an electrode 2 formed on a surface of an insulating substrate 1, and has a reflective case 5 provided on the insulating substrate 1 so as to reflect the light from the light-emitting element 3, with the space inside the reflective case 5 sealed with a translucent resin 6. The reflective case 5 has a grained portion 51 formed over at least part of the surface thereof over which it makes contact with the translucent resin 6. This effectively prevents the translucent resin from coming off the reflective case. To enable the semiconductor light-emitting device to emit light with more even intensity in all directions, the grained portion is formed, preferably, at least in the portions of the reflective case 5 that face the side surfaces of the semiconductor light-emitting element.
摘要翻译：半导体发光装置具有安装在形成于绝缘基板1的表面上的电极2上的半导体发光元件3，并且具有设置在绝缘基板1上的反射壳体5，以反射来自光的光发光元件3，其中反射壳体5内的空间用半透明树脂6密封。反射壳体5具有在其与透光性树脂6接触的表面的至少一部分上形成的纹理部分51。有效地防止半透明树脂从反射壳体脱落。为了使半导体发光元件能够在各个方向上均匀地发光，最好至少在反射壳体5的面对半导体发光元件的侧面的部分形成纹理部分。

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