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1. 发明授权

US09470243B2 Guide vane attachment structure and fan 有权
标题翻译：导叶附件结构和风扇
公开(公告)号：US09470243B2
公开(公告)日：2016-10-18
申请号：US13979054
申请日：2012-03-08
申请人： Tadahiro Ishigure , Yukihiro Kondo , Takaomi Inada
发明人： Tadahiro Ishigure , Yukihiro Kondo , Takaomi Inada
IPC分类号： F01D25/24 , F04D29/54 , F01D5/28 , F01D9/04 , F02K3/06 , F04D29/64
CPC分类号： F04D29/54 , F01D5/282 , F01D9/042 , F01D25/243 , F01D25/246 , F02K3/06 , F04D29/542 , F04D29/644 , F05D2250/232 , F05D2260/36 , Y02T50/672
摘要： A guide vane attachment structure including a first fitting portion formed in a vane joint surface of a guide vane, a support member whose constituent material is a metal is integrally connected to a fan frame, and a second fitting portion to be fitted to the first fitting portion formed in a support joint surface of the support member.
摘要翻译：一种导向叶片安装结构，包括形成在导向叶片的叶片接合表面中的第一装配部分，构成材料为金属的支撑构件与风扇框架一体地连接，第二装配部分装配到第一配件部分形成在支撑构件的支撑接合表面中。

2. 发明申请

US20130287562A1 GUIDE VANE ATTACHMENT STRUCTURE AND FAN 有权
标题翻译：指导装置结构与风扇
公开(公告)号：US20130287562A1
公开(公告)日：2013-10-31
申请号：US13979054
申请日：2012-03-08
申请人： Tadahiro Ishigure , Yukihiro Kondo , Takaomi Inada
发明人： Tadahiro Ishigure , Yukihiro Kondo , Takaomi Inada
IPC分类号： F04D29/54
CPC分类号： F04D29/54 , F01D5/282 , F01D9/042 , F01D25/243 , F01D25/246 , F02K3/06 , F04D29/542 , F04D29/644 , F05D2250/232 , F05D2260/36 , Y02T50/672
摘要： A guide vane attachment structure including a first fitting portion formed in a vane joint surface of a guide vane, a support member whose constituent material is a metal is integrally connected to a fan frame, and a second fitting portion to be fitted to the first fitting portion formed in a support joint surface of the support member.
摘要翻译：一种导向叶片安装结构，包括形成在导向叶片的叶片接合表面中的第一装配部分，构成材料为金属的支撑构件与风扇框架一体地连接，第二装配部分装配到第一配件部分形成在支撑构件的支撑接合表面中。

3. 发明授权

US5720945A 1,3-butanediol thioglycollate isomer mixture and permanent waving composition comprising same 失效
标题翻译： 1,3-丁二醇硫代乙醇酸异构体混合物和包含其的永久挥发组合物
公开(公告)号：US5720945A
公开(公告)日：1998-02-24
申请号：US620024
申请日：1996-03-21
申请人： Akira Kiyomine , Yukihiro Kondo , Kenichi Morita , Shinobu Nagase , Koichi Nakamura , Yoshinori Nishizawa , Bernd Nocker , Hitoshi Sakaguchi , Hiroyuki Suzuki
发明人： Akira Kiyomine , Yukihiro Kondo , Kenichi Morita , Shinobu Nagase , Koichi Nakamura , Yoshinori Nishizawa , Bernd Nocker , Hitoshi Sakaguchi , Hiroyuki Suzuki
IPC分类号： A61K8/46 , A61Q5/04 , C07C323/52 , A61K7/09 , A61K7/07
CPC分类号： A61Q5/04 , A61K8/46
摘要： The object of the invention is a new isomer mixture of 3-hydroxybutyl monothioglycollate and 3-hydroxy-1-methyl propyl monothioglycollate in a weight proportion of about 1.5:1 to 4:1, preferably about 2:1 to about 3:1, comprising less than 5%, preferably less than 2% by wt., of 1,3-butanediol thioglycollate, and its use as the sole or main reducing agent in compositions for permanent waving of human hair. The compositions have reduced smell, good waving properties and an extremely low sensitizing potential on human skin.
摘要翻译：本发明的目的是重量比为约1.5:1至4:1，优选约2:1至约3:1的3-羟基丁基一硫代乙醇酸酯和3-羟基-1-甲基丙基一硫代乙醇酸酯的新异构体混合物，包含小于5重量％，优选小于2重量％的1,3-丁二醇巯基乙酸酯，以及其作为人类头发永久挥发组合物中唯一或主要还原剂的用途。组合物具有降低的气味，良好的挥发性能和对人体皮肤极度敏感的潜力。

4. 发明授权

US08390023B2 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element 有权
标题翻译：蓝宝石衬底，使用蓝宝石衬底的氮化物半导体发光元件，以及氮化物半导体发光元件的制造方法
公开(公告)号：US08390023B2
公开(公告)日：2013-03-05
申请号：US12446081
申请日：2007-10-19
申请人： Robert David Armitage , Yukihiro Kondo , Hideki Hirayama
发明人： Robert David Armitage , Yukihiro Kondo , Hideki Hirayama
IPC分类号： H01L33/00
CPC分类号： H01L21/02661 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01L33/16
摘要： The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.
摘要翻译：本发明提供一种廉价的基板，其可以通过气相生长实现晶体的m面生长。在蓝宝石衬底中，在生长GaN等的晶体时，准备从m面倾斜预定非常小的角度的偏角平面作为晶体模板的生长表面，通过抛光工艺制备包括步骤和梯田的逐步底物。根据上述结构，即使使用通常不形成m面（非极性面）GaN膜的廉价蓝宝石基板作为晶体生长用基板，也可以获得以下的效果。具体地说，c轴生长可以通过气相生长在平台上作为a平面从每个步骤的平面进行，这在器件的制造中是有利的，以便生长优异的GaN单晶，其具有被外延生长，使得m平面与平台的平面相对，并且同时，步骤被整合（熔化），由此可以从不具有显着性的GaN单晶的衬底制造器件穿线错位此外，使用m面可以有利地消除压电场的影响。

5. 发明授权

US4430537A Getter and electrical switching system using such getter 失效
标题翻译：吸气剂和电气开关系统使用这种吸气剂
公开(公告)号：US4430537A
公开(公告)日：1984-02-07
申请号：US363584
申请日：1982-03-30
申请人： Hans Sauer , Takashi Takada , Yukihiro Kondo
发明人： Hans Sauer , Takashi Takada , Yukihiro Kondo
IPC分类号： H01H1/64 , H01H9/04
CPC分类号： H01H1/645
摘要： A getter for use in a sealed contact chamber consists of a porous getter material which acts to adsorb substances which could create resistive films on electrical contacts. By disposing such a getter within the contact chamber of a switching device, such as an electromagnetic relay, molecules of, for instance, organic compounds, may be selectively and over long terms adsorbed to the getter and thus kept away from the contacts. The selective adsorption of such molecules is achieved by a porous getter material in which the majority of the pores have diameters greater than 3 nm and smaller than 100 nm, with the mean value of pore diameter ranging from about 7 nm to about 20 nm. The getter material may be substantially Al.sub.2 O.sub.3.
摘要翻译：在密封接触室中使用的吸气剂由多孔吸气剂材料组成，其用于吸附可在电触点上产生电阻膜的物质。通过在诸如电磁继电器的开关装置的接触室内设置这种吸气剂，例如有机化合物的分子可以被选择性地且超过长期吸附到吸气剂上并因此远离接触点。这种分子的选择性吸附通过多孔吸气剂材料实现，其中大部分孔具有大于3nm且小于100nm的直径，孔径的平均值为约7nm至约20nm。吸气材料可以基本上是Al 2 O 3。

6. 发明申请

US20100207136A1 SAPPHIRE SUBSTRATE, NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAPPHIRE SUBSTRATE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT 有权
标题翻译： SAPPHIRE底物，使用锑基底材的氮化物半导体发光元件及其制造氮化物半导体发光元件的方法
公开(公告)号：US20100207136A1
公开(公告)日：2010-08-19
申请号：US12446081
申请日：2007-10-19
申请人： Robert David Armitage , Yukihiro Kondo , Hideki Hirayama
发明人： Robert David Armitage , Yukihiro Kondo , Hideki Hirayama
IPC分类号： H01L33/32 , H01L29/02 , H01L21/20
CPC分类号： H01L21/02661 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01L33/16
摘要： The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.
摘要翻译：本发明提供一种廉价的基板，其可以通过气相生长实现晶体的m面生长。在蓝宝石衬底中，在生长GaN等的晶体时，准备从m面倾斜预定非常小的角度的偏角平面作为晶体模板的生长表面，通过抛光工艺制备包括步骤和梯田的逐步底物。根据上述结构，即使使用通常不形成m面（非极性面）GaN膜的廉价蓝宝石基板作为晶体生长用基板，也可以获得以下的效果。具体地说，c轴生长可以通过气相生长在平台上作为a平面从每个步骤的平面进行，这在器件的制造中是有利的，以便生长优异的GaN单晶，其具有被外延生长，使得m平面与平台的平面相对，并且同时，步骤被整合（熔化），由此可以从不具有显着性的GaN单晶的衬底制造器件穿线错位此外，使用m面可以有利地消除压电场的影响。

7. 发明授权

US07723739B2 Semiconductor light emitting device and illuminating device using it 有权
标题翻译：半导体发光装置及其使用的照明装置
公开(公告)号：US07723739B2
公开(公告)日：2010-05-25
申请号：US11991418
申请日：2006-09-04
申请人： Takayoshi Takano , Yukihiro Kondo , Junji Ikeda , Hideki Hirayama
发明人： Takayoshi Takano , Yukihiro Kondo , Junji Ikeda , Hideki Hirayama
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/06 , H01L33/22 , H01L33/32
摘要： A semiconductor light emitting device includes an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGaInN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.
摘要翻译：半导体发光器件包括在单晶衬底1的一个表面侧上形成的用于通过第一缓冲层2外延生长的n型氮化物半导体层3，形成在n型表面侧的发射层5 氮化物半导体层3和形成在发光层5的表面侧的p型氮化物半导体层6.发光层5具有AlGaInN量子阱结构和具有与阻挡层相同的组成的第二缓冲层4 发光层5的5a设置在n型氮化物半导体层3和发光层5之间。在半导体发光器件中，与常规配置相比，可以增加紫外线辐射的发射强度，同时使用AlGaInN 作为发射层的材料。

8. 发明授权

US06794805B1 Field emission electron source, method of producing the same, and use of the same 失效
标题翻译：场发射电子源，其制造方法及其用途
公开(公告)号：US06794805B1
公开(公告)日：2004-09-21
申请号：US09382956
申请日：1999-08-25
申请人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Naomasa Oka , Nobuyoshi Koshida
发明人： Takashi Hatai , Takuya Komoda , Yoshiaki Honda , Koichi Aizawa , Yoshifumi Watabe , Tsutomu Ichihara , Yukihiro Kondo , Naomasa Oka , Nobuyoshi Koshida
IPC分类号： H01J130
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022 , H01J31/127 , H01J2201/3125
摘要： An array of field emission electron sources and a method of preparing the array which discharges electrons from desired regions of a surface electrode of field emission electron sources. The field emission electron source 10 comprises an electrically conductive substrate of p-type silicon substrate 1; n-type regions 8 of stripes of diffusion layers on one of principal surfaces of the p-type silicon substrate, strong electric field drift layers 6 formed on the n-type regions 8 which is made of oxidized porous poly-silicon for drifting electrons injected from the n-type region 8; poly-silicon layers 3 between the strong field drift layers 6; surface electrodes 7 of the stripes of thin conductive film formed in a manner to cross over the stripes of the strong field drift layer 6 and the poly-silicon layers 3. By selecting a pair of the n-type regions 8 and the surface electrodes 7 and thereby making electron emitted from the crossing points due to combination of the surface electrode 7 to be electrically applied and the n-type region 8 to be electrically applied, electrons can be discharged from desired regions of the surface electrodes 7.
摘要翻译：场发射电子源的阵列和制备阵列的方法，其从场致发射电子源的表面电极的期望区域放电。场发射电子源10包括p型硅衬底1的导电衬底; 在p型硅衬底的一个主表面上的扩散层条纹的n型区域8，形成在由氧化的多孔多晶硅制成的n型区域8上的强电场漂移层6，用于漂移电子注入从n型区域8; 强场漂移层6之间的多晶硅层3; 薄导电薄膜条的表面电极7以与强场漂移层6和多晶硅层3的条纹交叉的方式形成。通过选择一对n型区域8和表面电极7 从而由于要被施加的表面电极7的组合和被施加的n型区域8而使从交叉点发射的电子能够从表面电极7的期望的区域排出电子。

9. 发明授权

US06498426B1 Field emission-type electron source and manufacturing method thereof 有权
标题翻译：场致发射型电子源及其制造方法
公开(公告)号：US06498426B1
公开(公告)日：2002-12-24
申请号：US09557916
申请日：2000-04-21
申请人： Yoshifumi Watabe , Yukihiro Kondo , Koichi Aizawa , Takuya Komoda , Yoshiaki Honda , Takashi Hatai , Tsutomu Ichihara , Nobuyoshi Koshida
发明人： Yoshifumi Watabe , Yukihiro Kondo , Koichi Aizawa , Takuya Komoda , Yoshiaki Honda , Takashi Hatai , Tsutomu Ichihara , Nobuyoshi Koshida
IPC分类号： H01J100
CPC分类号： B82Y10/00 , H01J1/304 , H01J1/312 , H01J9/025
摘要： A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24). Further, an average dimension of each of the porous structures (25) in a thickness direction of the semiconductor layer is smaller than or equal to 2 &mgr;m.
摘要翻译：场发射型电子源（10）设置有导电基板（1），形成在导电基板（1）的表面上的半导体层，半导体层的至少一部分被制成多孔的导电基板形成在半导体层上的薄膜（7）。通过在导电薄膜（7）和导电性基板（1）之间施加电压，使导电性薄膜（7）的导电性薄膜（7）通过半导体层从导电性薄膜（7）射出，膜（7）用作抵靠导电基板（1）的正电极。半导体层包括多孔半导体层（6），其中由纳米级微细半导体晶体构成的柱状结构（21）和多孔结构（25）共存，每个结构的表面被绝缘膜（22， 24）。此外，半导体层的厚度方向上的多孔结构体（25）的平均尺寸小于或等于2μm。

10. 发明授权

US6116785A Self-aligning roller bearing 失效
标题翻译：自调心滚子轴承
公开(公告)号：US6116785A
公开(公告)日：2000-09-12
申请号：US177084
申请日：1998-10-23
申请人： Yukihiro Kondo , Yukimitsu Yamamoto , Takeshi Maeda
发明人： Yukihiro Kondo , Yukimitsu Yamamoto , Takeshi Maeda
IPC分类号： F16C23/06 , B21B31/07 , B21B39/00 , F16C23/08 , F16C33/54 , F16C33/66
CPC分类号： F16C33/48 , B21B31/076 , F16C23/086 , F16C33/49 , F16C33/543 , F16C33/6611 , B21B39/008
摘要： A solid lubrication type self-aligning roller bearing is low in frictional torque and high in high-speed rotation performance. Only the space between fingers of the retainer protruding into the spaces between the outer ring and adjacent rollers arranged in two rows is filled with a lubricating composition manufactured by solidifying a mixture of an ultra-high-molecular-weight polyolefin and a grease to reduce the number of contact portions of the solid lubricating composition with the outer ring and the rollers. It is thus possible to considerably reduce torque and heat buildup due to sliding friction at the contact portions.
摘要翻译：固体润滑型自动调心滚子轴承摩擦转矩低，高速旋转性能高。只有突出到外圈和相邻辊之间的空间中的保持器之间的空间被布置成两排，填充有通过将超高分子量聚烯烃和油脂的混合物固化而制成的润滑组合物，以减少固体润滑组合物与外圈和辊的接触部分的数量。因此，可以显着地减少由于接触部分处的滑动摩擦而产生的扭矩和热量积累。

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