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1. 发明申请

US20140332847A1 Composite One-Piece IGBT Device and Producing Method Thereof 审中-公开
标题翻译：复合一体式IGBT器件及其制造方法
公开(公告)号：US20140332847A1
公开(公告)日：2014-11-13
申请号：US14372190
申请日：2013-07-17
申请人： TSINGHUA UNIVERSITY
发明人： Liren Yan , Daoguang Liu , Zhihong Liu , Wei Zhang , Wei Zhou , Jie Cui
IPC分类号： H01L27/082 , H01L29/40 , H01L29/739
CPC分类号： H01L27/0823 , H01L29/0696 , H01L29/404 , H01L29/7395
摘要： A composite one-piece IGBT power device is disclosed to solve a problem that existing devices' turning-on/off speed is not high enough. The composite one-piece IGBT device of the present invention comprises at least two IGBT devices. Drift regions of the at least two IGBT devices connect with each other and electrodes of the at least two IGBT devices are led out separately from each other. The composite one-piece IGBT device may also consist of four IGBT devices. The drift regions of the four IGBT devices connect with each other. The composite IGBT device may also be embodied as two IGBT devices connected with each other. One of the two IGBT devices acts as a primary switching device for switching a large current, and the other acts as an auxiliary device for accelerating the switching action of the primary switching device. The composite IGBT device of the present invention is formed through a producing method which adds a few steps such as forming grooves to the conventional IGBT manufacturing process. The present invention is inexpensive and easy to implement, and provides a benefit of further increasing an operating speed by using two or more IGBT devices which promote each other's turning-on/off speed.
摘要翻译：公开了一种复合的单件IGBT功率器件来解决现有器件的接通/断开速度不够高的问题。本发明的复合一体IGBT器件包括至少两个IGBT器件。所述至少两个IGBT器件的漂移区域彼此连接，并且所述至少两个IGBT器件的电极彼此分离引出。复合一体IGBT器件也可以由四个IGBT器件组成。四个IGBT器件的漂移区域相互连接。复合IGBT器件也可以实现为彼此连接的两个IGBT器件。两个IGBT器件中的一个用作用于切换大电流的主开关器件，另一个用作用于加速初级开关器件的开关动作的辅助器件。本发明的复合IGBT器件通过在传统的IGBT制造工艺中添加诸如形成沟槽的几个步骤的制造方法形成。本发明便宜且易于实现，并且通过使用两个或更多个促进彼此的接通/断开速度的IGBT器件来提供进一步提高工作速度的益处。

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