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1. 发明授权

US12034275B2 Energy efficient laser arrangement 有权
公开(公告)号：US12034275B2
公开(公告)日：2024-07-09
申请号：US16919149
申请日：2020-07-02
申请人： TRUMPF Photonic Components GmbH
发明人： Stephan Gronenborn , Holger Joachim Moench
IPC分类号： H01S5/183 , H01S5/42 , H01S5/042
CPC分类号： H01S5/18391 , H01S5/423 , H01S5/042
摘要： A laser arrangement includes a laser array including a plurality of Vertical Cavity Surface Emitting lasers and an optical structure including a diffuser arranged to change a distribution of the laser light. The optical structure is configured to transform the laser light to transformed laser light such that an overlap of the emission cones of at least a group of the plurality of lasers is increased in field-of-view in comparison to perfectly collimated laser light diffused to a flat-top intensity profile in the field-of-view. The optical structure is arranged to redirect the laser light emitted at angles of the emission cone to the field-of-view so as to increase the overlap of the emitted laser light in the field-of-view. The optical structure is also configured to provide a slope angle α of an intensity profile along a direction of the field-of-view that is smaller than a divergence angle of the laser.

2. 发明公开

US20240128719A1 METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT AND SUCH A SEMICONDUCTOR COMPONENT 审中-公开
公开(公告)号：US20240128719A1
公开(公告)日：2024-04-18
申请号：US18397856
申请日：2023-12-27
申请人： TRUMPF Photonic Components GmbH
发明人： Roman Koerner , Alexander Weigl , Holger Joachim Moench , Berthold Schmidt
IPC分类号： H01S5/183 , H01S5/02 , H01S5/42
CPC分类号： H01S5/18308 , H01S5/0217 , H01S5/18305 , H01S5/423 , H01S5/34
摘要： A method for producing a semiconductor component for emitting light includes providing a base body, the base body comprising an active layer for generating the light and a tunnel contact, and forming a stop structure by implantation in a region of the tunnel contact. The stop structure delimits the tunnel contact and serves to constrict a current introduced into the active layer. Defects due to crystal imperfections are generated by the implantation so that the implanted region is transparent for the light having an emitted wavelength.

3. 发明授权

US10965103B2 Laser arrangement comprising a VCSEL array 有权
公开(公告)号：US10965103B2
公开(公告)日：2021-03-30
申请号：US16802588
申请日：2020-02-27
申请人： TRUMPF Photonic Components GmbH
发明人： Stephan Gronenborn , Holger Joachim Moench
IPC分类号： H01S5/42 , H01S5/00 , H01S5/026 , H01S5/183
摘要： A laser arrangement includes a VCSEL array comprising multiple VCSELs arranged on a common semiconductor substrate, an optical structure, and a diffusor structure. The optical structure is arranged to reduce a divergence angle of laser light emitted by each respective VCSEL to a section of the diffusor structure assigned to the respective VCSEL. The diffusor structure is arranged to transform the laser light received from the optical structure to transformed laser light such that a continuous illumination pattern is configured to be provided in a reference plane in a defined field-of-view. The diffusor structure is arranged to increase a size of the illumination pattern in comparison to an untransformed illumination pattern which can be provided without the diffusor structure. The VCSEL array, optical structure, and diffusor structure are arranged such that sections of the diffusor structure do not overlap. Diffusor properties of the diffusor structure vary across the diffusor structure.

4. 发明申请

US20200256965A1 POLARIZATION DETECTION IMPROVED SENSING 审中-公开
公开(公告)号：US20200256965A1
公开(公告)日：2020-08-13
申请号：US16862622
申请日：2020-04-30
申请人： TRUMPF Photonic Components GmbH
发明人： Holger Joachim Moench , Matthew John Lawrenson , Nicholas Walker , Jan Jasper Van Den Berg
IPC分类号： G01S7/499 , G01S7/4915 , G01S17/36 , G01S17/894 , G06T7/521
摘要： A time-of-flight camera module includes a controller, a time-of-flight detector, a laser device, and an optical unit comprising a polarization rotator arranged to rotate a plane of polarized light. The controller is configured to modulate the time-of-flight detector and the laser device in a depth sensing mode. The time-of-flight detector is configured to record depth data of a scene in the depth sensing mode by means of modulated laser light emitted by the laser device and reflected from an object in the scene. The depth data is descriptive of a distance to the object in the scene. The controller is further configured to modulate the time-of-flight detector and the polarization rotator in a surface polarization sensing mode. The time-of-flight detector is configured to record polarization data of the scene in the surface polarization sensing mode by detection light received from the object in the scene after traversing the polarization rotator.

5. 发明申请

US20200160566A1 DISPLAY APPARATUS FOR COMPUTER-MEDIATED REALITY 审中-公开
公开(公告)号：US20200160566A1
公开(公告)日：2020-05-21
申请号：US16728034
申请日：2019-12-27
申请人： TRUMPF Photonic Components GmbH
发明人： Holger Joachim Moench , Joachim Wilhelm Hellmig
IPC分类号： G06T11/00 , G06T3/20
摘要： A display apparatus configured to be coupled to a movable object includes at least a first laser sensor module and a display device configured to display a field-of-view. The first laser sensor module is configured to determine, by self mixing interference measurements, movements of the movable object with respect to a reference object mechanically coupled to the movable object. The first laser sensor module is configured to emit at least three measurement beams in three different spatial directions to the reference object when the display apparatus is coupled to the movable object and the first laser sensor module is configured to determine velocity vectors or distances collinear to the spatial directions. The display device is configured to integrate at least one virtual object in the field-of-view in accordance with the determined movements of the movable object.

6. 发明授权

US11563306B2 Segmented vertical cavity surface emitting laser 有权
公开(公告)号：US11563306B2
公开(公告)日：2023-01-24
申请号：US16895017
申请日：2020-06-08
申请人： TRUMPF Photonic Components GmbH
发明人： Holger Joachim Moench , Stephan Gronenborn
IPC分类号： H01S5/183 , H01S5/042 , H01S5/062
摘要： A VCSEL device includes a first electrical contact, a substrate, a second electrical contact, and an optical resonator arranged on a first side of the substrate. The optical resonator includes a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first and second reflecting structures, and a guiding structure. The guiding structure is configured to define a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position such that a first light emitting area is provided, to define at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position such that a second light emitting area is provided, and to reduce an intensity in between the at least two light-emitting areas during operation.

7. 发明申请

US20220094137A1 VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH MONOLITHICALLY INTEGRATED PHOTODIODE 有权
公开(公告)号：US20220094137A1
公开(公告)日：2022-03-24
申请号：US17539266
申请日：2021-12-01
申请人： TRUMPF Photonic Components GmbH
发明人： Ulrich Weichmann , Philipp Henning Gerlach , Susanne Weidenfeld , Holger Joachim Moench
IPC分类号： H01S5/026 , H01S5/343 , H01S5/183 , H01S5/042
摘要： A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an InxGa1-xAs layer, where 0≤x x. The InyGa1-yAs layer is an intrinsic layer of the light absorption region. The InyGa1-yAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the InyGa1-yAs layer. The InyGa1-yAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.

8. 发明授权

US11092531B2 Optical particle sensor 有权
公开(公告)号：US11092531B2
公开(公告)日：2021-08-17
申请号：US16300594
申请日：2017-05-17
申请人： TRUMPF Photonic Components GmbH
发明人： Johannes Henrikus Maria Spruit , Petrus Theodorus Jutte , Alexander Marc Van Der Lee , Holger Joachim Moench , Joachim Wilhelm Hellmig
IPC分类号： G01N15/02 , G01N15/14 , H01S5/183 , G01N15/00
摘要： The invention describes a laser sensor module. The laser sensor module comprises at least a first laser (111) being adapted to emit a first measurement beam (111′) and at least a second laser (112) being adapted to emit a second measurement beam (112′). The laser sensor module further comprises an optical device (150) being arranged to redirect the first measurement beam (111′) and the second measurement beam (112′) such that the first measurement beam (111′) and the second measurement beam enclose an angle between 45° and 135°. The laser sensor module comprises one detector (120) being adapted to determine at least a first self-mixing interference signal of a first optical wave within a first laser cavity of the first laser (111) and at least a second self-mixing interference signal of a second optical wave within a second laser cavity of the second laser (112). This configuration enables determination of an average velocity of the particles despite of the fact that it is not possible to determine the components of the velocity vector. The introduced error by means of statistical variations is acceptable because the number of detected particles scales with the cubic root of the particle velocity. The invention further describes a particle sensor (100) comprising such a laser sensor module, a corresponding method and computer program product. The invention enables a simple and low-cost particle sensor (100) for detecting small particles based on laser self-mixing interference.

9. 发明申请

US20210104867A1 VCSEL ARRAY WITH SMALL PULSE DELAY 有权
公开(公告)号：US20210104867A1
公开(公告)日：2021-04-08
申请号：US17123148
申请日：2020-12-16
申请人： TRUMPF Photonic Components GmbH
发明人： Alexander Weigl , Stephan Gronenborn , Holger Joachim Moench
IPC分类号： H01S5/042 , G01S17/894 , G01S7/484 , G01S17/10 , H01S5/42 , H01S5/183 , H01S5/02335
摘要： A VCSEL array has VCSEL sub-arrays having VCSELs on a substrate. The sub-arrays are electrically contacted by a first electrical contact arrangement common to the VCSELs within a respective sub-array and a second electrical contact arrangement. The second electrical contact arrangement has second electrical contacts contacting a respective VCSEL within the respective sub-array, individually. The second electrical contacts each has a second metal-semiconductor interface to a second semiconductor layer of an associated VCSEL. The second electrical contacts pump the VCSEL along a current path to the first electrical contact arrangement. Current paths between the first electrical contact arrangement and the second electrical contacts via the VCSELs have a symmetry selected out of the group of rotation symmetry, mirror symmetry, and translation symmetry. The first electrical contact arrangement and the second electrical contact arrangement are arranged on the same side of the substrate.

10. 发明申请

US20200303902A1 SEGMENTED VERTICAL CAVITY SURFACE EMITTING LASER 审中-公开
公开(公告)号：US20200303902A1
公开(公告)日：2020-09-24
申请号：US16895017
申请日：2020-06-08
申请人： TRUMPF Photonic Components GmbH
发明人： Holger Joachim Moench , Stephan Gronenborn
IPC分类号： H01S5/183 , H01S5/042
摘要： A VCSEL device includes a first electrical contact, a substrate, a second electrical contact, and an optical resonator arranged on a first side of the substrate. The optical resonator includes a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first and second reflecting structures, and a guiding structure. The guiding structure is configured to define a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position such that a first light emitting area is provided, to define at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position such that a second light emitting area is provided, and to reduce an intensity in between the at least two light-emitting areas during operation.

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