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1. 发明授权

US10361267B2 Semiconductor device 有权
公开(公告)号：US10361267B2
公开(公告)日：2019-07-23
申请号：US15792325
申请日：2017-10-24
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Takashi Okawa
IPC分类号： H01L29/78 , H01L29/06 , H01L21/04 , H01L21/02 , H01L29/66 , H01L29/16 , H01L29/10
摘要： A semiconductor device includes a compound semiconductor substrate including a gate region and an active region, a trench provided in a range between the gate region and the active region, a gate insulating film disposed in the trench, a source electrode, and a drain electrode. The gate region includes a first gate region of a p-type being in contact with the gate insulating film, a second gate region of the p-type having a p-type impurity concentration lower than a p-type impurity concentration of the first gate region, a third gate region of an n-type, and a fourth gate region of the p-type. The active region includes a source region of the n-type being in contact with the gate insulating film, a body region of the p-type facing the second gate region via the gate insulating film, and a drain region of the n-type.

2. 发明授权

US10002863B2 Semiconductor device and manufacturing method for the same 有权
公开(公告)号：US10002863B2
公开(公告)日：2018-06-19
申请号：US15145236
申请日：2016-05-03
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Hidemoto Tomita , Yoshitaka Nagasato , Takashi Okawa , Masakazu Kanechika , Hiroyuki Ueda
IPC分类号： H01L27/06 , H01L29/205 , H01L29/872 , H01L21/306 , H01L29/66 , H01L23/34 , H01L21/8252 , G01K7/16 , H01L29/778 , G01K7/01 , H01L29/20 , H01L21/762 , H01L29/10
CPC分类号： H01L27/0629 , G01K7/01 , G01K7/16 , H01L21/30612 , H01L21/762 , H01L21/76224 , H01L21/8252 , H01L23/34 , H01L27/0605 , H01L29/0692 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/7786 , H01L29/8605 , H01L29/872
摘要： A semiconductor device is capable of accurately sensing a temperature of a semiconductor element incorporated in a semiconductor substrate. The semiconductor device includes a temperature sensor. The temperature sensor includes a first nitride semiconductor layer of p-type, a first sense electrode, and a second sense electrode. The first sense electrode and the second sense electrode are located to be capable of passing an electric current between the first sense electrode and the second sense electrode through the first nitride semiconductor layer.

3. 发明授权

US09525062B2 Insulated gate switching element 有权
标题翻译：绝缘栅开关元件
公开(公告)号：US09525062B2
公开(公告)日：2016-12-20
申请号：US15133993
申请日：2016-04-20
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： Takashi Ishida , Takashi Okawa
IPC分类号： H01L21/00 , H01L29/78 , H01L29/06 , H01L29/10
CPC分类号： H01L29/7824 , H01L29/0634 , H01L29/1083 , H01L29/1095 , H01L29/78 , H01L29/7823
摘要： An insulated gate switching element includes: a semiconductor substrate; a gate insulating film disposed on a surface of the semiconductor substrate; and a gate electrode disposed on the gate insulating film. The semiconductor substrate includes a first semiconductor region, a base region, and a second semiconductor region. The gate electrode faces the base region with the gate insulating film interposed therebetween. A high-resistance region, which is separated from the gate insulating film and has higher resistance to a number of carriers of a first conduction type semiconductor than that of the base region, is disposed in at least one of a first interface which is an interface between the base region and the first semiconductor region and a second interface which is an interface between the base region and the second semiconductor region.
摘要翻译：绝缘栅极开关元件包括：半导体衬底; 设置在所述半导体基板的表面上的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。半导体衬底包括第一半导体区域，基极区域和第二半导体区域。栅极电极面对基极区域，栅绝缘膜插入其间。与第一导电型半导体的载流子相比，与栅极绝缘膜分离并且对第一导电型半导体的载流子的耐受性高于基极区域的高电阻区域设置在作为界面的第一界面中的至少一个在所述基极区域和所述第一半导体区域之间，以及作为所述基极区域和所述第二半导体区域之间的界面的第二界面。

4. 发明申请

US20160240635A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160240635A1
公开(公告)日：2016-08-18
申请号：US15044167
申请日：2016-02-16
申请人： Toyota Jidosha Kabushiki Kaisha
发明人： Takashi Okawa
IPC分类号： H01L29/735 , H01L29/10 , H01L29/08
CPC分类号： H01L29/735 , H01L29/0603 , H01L29/0615 , H01L29/1008 , H01L29/7317
摘要： A semiconductor device includes a first main electrode; a second main electrode; a first semiconductor region of a first conductivity type; a second semiconductor region of the first conductivity type; a third semiconductor region of a second conductivity type arranged between the first semiconductor region and the second semiconductor region; and a depletion layer suppression region arranged inside of the third semiconductor region and being configured to suppress a spread of a depletion layer extending in the third semiconductor region when a reverse bias voltage is applied between the second semiconductor region and the third semiconductor region. The third semiconductor region includes a shortest region where a distance between a first boundary surface and a second boundary surface is shortest, and the shortest region includes a region where the depletion layer suppression region does not exist between the first boundary surface and the second boundary surface.
摘要翻译：半导体器件包括第一主电极; 第二主电极; 第一导电类型的第一半导体区域; 第一导电类型的第二半导体区域; 布置在第一半导体区域和第二半导体区域之间的第二导电类型的第三半导体区域; 以及耗尽层抑制区域，其设置在第三半导体区域的内部，并且被配置为当在第二半导体区域和第三半导体区域之间施加反向偏置电压时，抑制在第三半导体区域中延伸的耗尽层的扩展。第三半导体区域包括第一边界面和第二边界面之间的距离最短的最短区域，最短区域包括在第一边界面和第二边界面之间不存在耗尽层抑制区域的区域。

5. 发明授权

US10276707B2 Switching element having inclined body layer surfaces 有权
公开(公告)号：US10276707B2
公开(公告)日：2019-04-30
申请号：US15833938
申请日：2017-12-06
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Tetsuya Yamada , Takashi Okawa , Tomohiko Mori , Hiroyuki Ueda
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/16 , H01L29/20 , H01L29/66 , H01L23/535 , H01L21/306 , H01L21/02 , H01L21/265 , H01L21/768 , H01L21/308 , H01L29/739
摘要： A switching element includes a semiconductor substrate that includes a first n-type semiconductor layer, a p-type body layer constituted by an epitaxial layer, and a second n-type semiconductor layer separated from the first n-type semiconductor layer by the body layer, a gate insulating film that covers a range across the surface of the first n-type semiconductor layer, the surface of the body layer, and the surface of the second n-type semiconductor layer, and a gate electrode that faces the body layer through the gate insulating film. An interface between the first n-type semiconductor layer and the body layer includes an inclined surface. The inclined surface is inclined such that the depth of the body layer increases as a distance from an end of the body layer increases in a horizontal direction. The inclined surface is disposed below the gate electrode.

6. 发明授权

US10050108B2 Semiconductor device 有权
公开(公告)号：US10050108B2
公开(公告)日：2018-08-14
申请号：US15671503
申请日：2017-08-08
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Takashi Okawa
IPC分类号： H01L29/08 , H01L27/04 , H01L29/06 , H01L29/16 , H01L29/423 , H01L29/78 , H01L29/20
摘要： A semiconductor device may include a semiconductor layer, an insulation gate section, and a first conductivity-type semiconductor region; wherein the semiconductor layer may include a vertical drift region being of a second conductivity type and disposed at the one of main surfaces; a body region being of the first conductivity type, adjoining the vertical drift region, and disposed at the one of main surfaces; and a source region being of the second conductivity type, separated from the vertical drift region by the body region, and disposed at the one of main surfaces, wherein the insulation gate section is opposed to a portion of the body region which separates the vertical drift region and the source region; and the first conductivity-type semiconductor region is opposed to at least a part of a portion of the vertical drift region which is disposed at the one of main surfaces.

7. 发明授权

US09923089B2 Switching device 有权
公开(公告)号：US09923089B2
公开(公告)日：2018-03-20
申请号：US15285015
申请日：2016-10-04
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Takashi Okawa
IPC分类号： H01L31/0256 , H01L29/778 , H01L29/08 , H01L29/205 , H01L29/36 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/06 , H01L29/20 , H01L29/10
CPC分类号： H01L29/7787 , H01L29/0619 , H01L29/0891 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/36 , H01L29/405 , H01L29/41758 , H01L29/42316 , H01L29/7786
摘要： The switching device includes an electron transport layer; an electron supply layer provided on the electron transport layer and being in contact with the electron transport layer by heterojunction; a source electrode being in contact with the electron supply layer; a drain electrode being in contact with the electron supply layer at a position spaced from the source electrode; and a first gate electrode provided above the electron supply layer, and provided between the source electrode and the drain electrode when viewed in a plan view from above. The first gate electrode is electrically connected above the electron supply layer to the drain electrode. An on-resistance of the switching device is lower than an electric resistance between the first gate electrode and the drain electrode.

8. 发明授权

US09559197B2 Hetero-junction semiconductor device and method of manufacturing a hetero-junction semiconductor device 有权
标题翻译：异质结半导体器件及其制造方法
公开(公告)号：US09559197B2
公开(公告)日：2017-01-31
申请号：US15138808
申请日：2016-04-26
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Takashi Okawa
IPC分类号： H01L29/15 , H01L29/778 , H01L29/205 , H01L29/20 , H01L29/06 , H01L29/66
CPC分类号： H01L29/7787 , H01L29/0634 , H01L29/0688 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/42356 , H01L29/66462
摘要： A hetero-junction semiconductor device includes: a channel layer that includes a first semiconductor; a barrier layer that is provided on the channel layer and includes a semiconductor having a band gap larger than a band gap of the first semiconductor; a source electrode and a drain electrode that are provided on the barrier layer and are ohmic contacted to the barrier layer; a p-type semiconductor layer provided on the barrier layer, the p-type semiconductor layer being provided in a region between the source electrode and the drain electrode on the barrier layer; an n-type semiconductor layer that is provided on the p-type semiconductor layer; and a gate electrode that is joined to the n-type semiconductor layer. A joint interface between the p-type semiconductor layer and the n-type semiconductor layer has a concavo-convex structure.
摘要翻译：异质结半导体器件包括：沟道层，其包括第一半导体; 阻挡层，其设置在所述沟道层上并且包括具有比所述第一半导体的带隙大的带隙的半导体; 源电极和漏电极，设置在阻挡层上并与阻挡层欧姆接触; 设置在阻挡层上的p型半导体层，p型半导体层设置在阻挡层上的源极和漏极之间的区域中; 设置在p型半导体层上的n型半导体层; 以及与n型半导体层接合的栅电极。 p型半导体层和n型半导体层之间的接合界面具有凹凸结构。

9. 发明授权

US10312362B2 Switching element having inclined body layer surfaces 有权
公开(公告)号：US10312362B2
公开(公告)日：2019-06-04
申请号：US15833938
申请日：2017-12-06
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Tetsuya Yamada , Takashi Okawa , Tomohiko Mori , Hiroyuki Ueda
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/16 , H01L29/20 , H01L29/66 , H01L23/535 , H01L21/306 , H01L21/02 , H01L21/265 , H01L21/768 , H01L21/308 , H01L29/739
摘要： A switching element includes a semiconductor substrate that includes a first n-type semiconductor layer, a p-type body layer constituted by an epitaxial layer, and a second n-type semiconductor layer separated from the first n-type semiconductor layer by the body layer, a gate insulating film that covers a range across the surface of the first n-type semiconductor layer, the surface of the body layer, and the surface of the second n-type semiconductor layer, and a gate electrode that faces the body layer through the gate insulating film. An interface between the first n-type semiconductor layer and the body layer includes an inclined surface. The inclined surface is inclined such that the depth of the body layer increases as a distance from an end of the body layer increases in a horizontal direction. The inclined surface is disposed below the gate electrode.

10. 发明授权

US09978856B2 Bipolar transistor 有权
公开(公告)号：US09978856B2
公开(公告)日：2018-05-22
申请号：US15025391
申请日：2014-08-27
申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Takashi Okawa , Hiroomi Eguchi , Hiromichi Kinpara , Satoshi Ikeda
IPC分类号： H01L29/66 , H01L29/735 , H01L29/06 , H01L29/10 , H01L29/73 , H01L29/732 , H01L29/08
CPC分类号： H01L29/735 , H01L29/0623 , H01L29/0808 , H01L29/0821 , H01L29/1008 , H01L29/73 , H01L29/732
摘要： Presented is a bipolar transistor capable of improving a current amplification rate while improving voltage resistance. A bipolar transistor is provided with a p-type emitter region, a p-type collector region, an n-type base region located between the emitter region and the collector region, a p-type first embedded region located below the base region, and an n-type region having a lower n-type impurity concentration than the base region. The base region is provided with a first high-concentration region and a low-concentration region positioned above the first embedded region, and a second high-concentration region positioned on a collector region side than the low-concentration region, wherein the second high-concentration region has a higher n-type impurity concentration than the low-concentration region.

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