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    • 1. 发明申请
    • Single Crystal Production Apparatus
    • 单晶生产设备
    • US20160208410A1
    • 2016-07-21
    • US15000883
    • 2016-01-19
    • TOYOTA JIDOSHA KABUSHIKI KAISHA
    • Nobuhira ABE
    • C30B17/00C30B29/36
    • C30B35/00C30B9/06C30B15/30C30B29/36
    • A single crystal production apparatus including a chamber housing a crucible and a heater, to which at least part of the heater is connected, a strain buffering support member connected to the chamber in a manner capable of being horizontally displaced while supporting the chamber in the perpendicular direction, and a base member to which a crucible support shaft and a seed crystal support shaft are directly connected and the chamber is connected via the strain buffering support member, wherein the rigidity of the base member is larger than the rigidity of the strain buffering support member, the chamber has a through hole, the crucible support shaft and the seed crystal support shaft are inserted into the through hole, and the gap between the crucible support shaft and the through hole and the gap between the seed crystal support shaft and the through hole are sealed by a sealing member.
    • 一种单晶制造装置,包括容纳坩埚和加热器的室,至少部分加热器连接到该加热器,应变缓冲支撑构件以能够水平位移的方式连接到腔室,同时将腔室支撑在垂直方向 方向,以及基部构件,坩埚支撑轴和晶种支撑轴直接连接到所述基座构件,并且所述室经由所述应变缓冲支撑构件连接,其中所述基座构件的刚性大于所述应变缓冲支撑件的刚性 所述腔室具有通孔,所述坩埚支撑轴和所述晶种支撑轴插入所述通孔中,所述坩埚支撑轴与所述通孔之间的间隙以及所述晶种支撑轴与所述通孔之间的间隙 孔由密封构件密封。