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1. 发明申请

US20150221513A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 审中-公开
标题翻译：生产多晶硅的方法
公开(公告)号：US20150221513A1
公开(公告)日：2015-08-06
申请号：US14420223
申请日：2013-08-05
申请人： TOKUYAMA CORPORATION
发明人： Takuya Majima , Satoru Wakamatsu , Manabu Sakida
IPC分类号： H01L21/02
CPC分类号： H01L21/02653 , C01B33/03 , H01L21/02532 , H01L21/02595
摘要： A process for producing polycrystalline silicon, comprising: a silicon deposition step for producing silicon through a reaction between a chlorosilane compound and hydrogen; a conversion reaction step for removing hydrogen chloride contained in an exhaust gas discharged from the silicon deposition step by bringing the exhaust gas into contact with activated carbon; a separation step for separating hydrogen contained in the gas after the conversion reaction obtained from the conversion reaction step; and a recycling step for supplying hydrogen obtained from the separation step to the silicon deposition step, wherein at least one of the following conditions (1) and (2) is satisfied: (1) the gas after the conversion reaction obtained from the conversion reaction step is brought into contact with an adsorbent containing a Lewis acid compound before the separation step; and (2) hydrogen obtained from the separation step is brought into contact with an adsorbent containing a Lewis acid compound before it is supplied to the silicon deposition step.
摘要翻译：一种生产多晶硅的方法，包括：硅沉积步骤，用于通过氯硅烷化合物和氢之间的反应制备硅; 用于通过使废气与活性炭接触来除去从硅沉积步骤排出的废气中所含的氯化氢的转化反应步骤; 分离步骤，用于分离由转化反应步骤获得的转化反应后的气体中所含的氢; 以及将从分离工序得到的氢供给至硅沉积工序的再循环工序，其中满足以下条件（1）和（2）中的至少一个：（1）从转化反应得到的转化反应后的气体在分离步骤之前使步骤与含有路易斯酸化合物的吸附剂接触; 和（2）从分离步骤获得的氢气在被供应到硅沉积步骤之前与含有路易斯酸化合物的吸附剂接触。

2. 发明公开

US20230294996A1 CRUSHED POLYCRYSTALLINE SILICON LUMPS AND METHOD FOR PRODUCING SAME 审中-公开
公开(公告)号：US20230294996A1
公开(公告)日：2023-09-21
申请号：US18023028
申请日：2021-08-26
申请人： TOKUYAMA CORPORATION
发明人： Manabu Sakida , Shinichiro Koyanagi
IPC分类号： C01B33/037
CPC分类号： C01B33/037 , C01P2006/80
摘要： A polycrystalline silicon crushed lump has a surface metal concentration of 15.0 pptw or less, in which a copper concentration is 0.30 pptw or less in the surface metal concentration, and a total concentration of iron and zinc is 2.00 pptw or less in the surface metal concentration, and preferably an iron concentration is 1.25 pptw or less, and a zinc concentration is 0.75 pptw or less.

3. 发明申请

US20220089341A1 Polycrystalline Silicon Lump, Packaging Body Thereof, and Method for Producing Same 有权
公开(公告)号：US20220089341A1
公开(公告)日：2022-03-24
申请号：US17425371
申请日：2020-01-21
申请人： Tokuyama Corporation
发明人： Manabu Sakida
IPC分类号： B65D65/42 , B65D81/18 , C01B33/02
摘要： A polycrystalline silicon lump packaging body is a packaging body in which the resin bag is filled with the polycrystalline silicon lumps having a surface metal concentration of 1000 pptw or less, in which a nitrate ion amount and preferably a fluorine ion amount present inside the packaging body are each 50 μg/L or less with respect to a filling void of the polycrystalline silicon lumps formed when the packaging body is left at 25° C. under 1 atm.

4. 发明申请

US20150175430A1 Method for Producing Polysilicon 审中-公开
标题翻译：多晶硅生产方法
公开(公告)号：US20150175430A1
公开(公告)日：2015-06-25
申请号：US14412220
申请日：2013-07-01
申请人： Tokuyama Corporation
发明人： Manabu Sakida , Satoru Wakamatsu , Nobuaki Yoshimatsu
IPC分类号： C01B33/03 , F22B1/18
CPC分类号： C01B33/03 , C01B33/035 , F22B1/18 , Y02P20/124
摘要： A method for producing polysilicon includes a deposition step for depositing polysilicon from raw material gas including chlorosilanes, and a heat recovery step of supplying exhaust gas generated from the deposition step in a boiler type heat recovery device provided with an exhaust gas pipe and then recovering heat. A gas temperature at an exhaust gas pipe outlet of the boiler type heat recovery device is set to 200° C. or more, and an exhaust gas flow rate at the exhaust gas pipe outlet in the boiler type heat recovery device is adjusted to 10 m/second or higher.
摘要翻译：制造多晶硅的方法包括：沉积步骤，用于从包括氯硅烷的原料气体中沉积多晶硅;以及热回收步骤，将从沉积步骤产生的废气供应到设置有排气管的锅炉式热回收装置中，然后回热。在锅炉式热回收装置的排气管出口处的气体温度设定为200℃以上，将锅炉式热回收装置的排气管出口的排气流量调整为10m /秒以上。

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