专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11131589B2 Piezoelectric thin-film sensor and use thereof 有权
公开(公告)号：US11131589B2
公开(公告)日：2021-09-28
申请号：US15947429
申请日：2018-04-06
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Wei-Yan Shih
IPC分类号： G01L1/16 , G01P15/09 , G01P15/12
摘要： A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.

2. 发明申请

US20190339806A1 INTEGRATED FORCE SENSING ELEMENT 审中-公开
公开(公告)号：US20190339806A1
公开(公告)日：2019-11-07
申请号：US16512020
申请日：2019-07-15
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Wei-Yan Shih , Steve Kummerl , Mark Stephen Toth , Alok Lohia , Terry Lee Sculley , Seung Bae Lee , Scott Robert Summerfelt
IPC分类号： G06F3/041
摘要： An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element is also disclosed and may include a conditioning circuit, temperature gauge, FRAM and a processor core.

3. 发明授权

US10353503B2 Integrated force sensing element 有权
公开(公告)号：US10353503B2
公开(公告)日：2019-07-16
申请号：US14926265
申请日：2015-10-29
申请人： Texas Instruments Incorporated
发明人： Wei-Yan Shih , Steve Kummerl , Mark Stephen Toth , Alok Lohia , Terry Lee Sculley , Seung Bae Lee , Scott Robert Summerfelt
IPC分类号： G06F3/041
摘要： An integrated force sensing element includes a piezoelectric sensor formed in an integrated circuit (IC) chip and a strain gauge at least partially overlying the piezoelectric sensor, where the piezoelectric sensor is able to flex. A human-machine interface using the integrated force sensing element may include a conditioning circuit, temperature gauge, FRAM and a processor core.

4. 发明申请

US20160329183A1 MOTION SENSING POWER SWITCH 审中-公开
标题翻译：运动感应开关
公开(公告)号：US20160329183A1
公开(公告)日：2016-11-10
申请号：US14706776
申请日：2015-05-07
申请人： Texas Instruments Incorporated
发明人： Leonardo Estevez , Terry Lee Sculley , Wei-Yan Shih , Wen Li , David Brian Barkin
IPC分类号： H01H59/00
CPC分类号： H01H59/0009
摘要： The present disclosure provides a power switch for use in a power management system including a power source for supplying an electrical current, and a load for receiving the electric current upon establishing a circuit with the power source. The power switch includes a motion sensor, a timer, and a gate. The motion sensor is configured to sense a motion related to an operation of the load and generate an idle signal when the sensed motion is below a predetermined threshold. The timer is coupled with the motion sensor, and it is configured to activate a power-off signal upon detecting the idle signal for a predetermined time period. The gate is coupled with the timer, and it is configured to either complete the circuit when the power-off signal is inactive or break up the circuit when the power-off signal is active.
摘要翻译：本公开提供了一种用于在包括用于提供电流的电源的电力管理系统中使用的电力开关，以及用于在与电源建立电路时接收电流的负载。电源开关包括运动传感器，定时器和门。运动传感器被配置为感测与负载的操作相关的运动，并且当感测到的运动低于预定阈值时产生空转信号。定时器与运动传感器耦合，并且其被配置为在预定时间段内检测到空闲信号时激活断电信号。门与定时器耦合，并且被配置为当电源关闭信号无效时完成电路，或者当断电信号有效时中断电路。

5. 发明申请

US20190162590A1 PIEZO-ELECTRIC SENSOR RESET 审中-公开
公开(公告)号：US20190162590A1
公开(公告)日：2019-05-30
申请号：US16191430
申请日：2018-11-14
申请人： Texas Instruments Incorporated
发明人： Michael Zwerg , Sudhanshu Khanna , Steven C. Bartling , Brian Elies , Krishnasawamy Nagaraj , Wei-Yan Shih
IPC分类号： G01H11/08
摘要： In described examples, each node between adjacent capacitive elements of a stack of series-coupled capacitive elements is biased during a reset mode, where each of the capacitive elements includes piezoelectric material. A strain-induced voltage is generated across each of the capacitive elements. Each of the strain-induced voltages is combined to generate a piezoelectric-responsive output signal during a sensing mode at a time different from the time of the reset mode.

6. 发明授权

US09496171B2 Printed interconnects for semiconductor packages 有权
标题翻译：用于半导体封装的印刷互连
公开(公告)号：US09496171B2
公开(公告)日：2016-11-15
申请号：US14848941
申请日：2015-09-09
申请人： Texas Instruments Incorporated
发明人： Benjamin Stassen Cook , Juan Alejandro Herbsommer , Matthew David Romig , Steven Alfred Kummerl , Wei-Yan Shih
IPC分类号： H01L23/48 , H01L21/768 , H01L23/528 , H01L23/00
CPC分类号： H01L24/27 , H01L21/4867 , H01L21/76838 , H01L23/528 , H01L23/5389 , H01L23/552 , H01L23/66 , H01L24/24 , H01L24/29 , H01L24/32 , H01L24/82 , H01L2223/6627 , H01L2224/24998 , H01L2224/2732 , H01L2224/27848 , H01L2224/29026 , H01L2224/29076 , H01L2224/32227 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/13055 , H01L2924/181 , H01L2924/3025 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： A method forming a packaged semiconductor device includes providing a first semiconductor die (first die) having bond pads thereon mounted face-up on a package substrate or on a die pad of a lead frame (substrate), wherein the substrate includes terminals or contact pads (substrate pads). A first dielectric layer is formed including printing a first dielectric precursor layer including a first ink having a first liquid carrier solvent extending from the substrate pads to the bond pads. A first interconnect precursor layer is printed including a second ink having a second liquid carrier over the first dielectric layer extending from the substrate pads to the bond pads. Sintering or curing the first interconnect precursor layer removes at least the second liquid carrier to form an electrically conductive interconnect including an ink residue which connects respective substrate pads to respective bond pads.
摘要翻译：一种形成封装半导体器件的方法包括提供一种第一半导体管芯（第一管芯），其上具有接合焊盘，其面朝上安装在封装衬底上或引线框架（衬底）的管芯焊盘上，其中衬底包括端子或接触焊盘（基板焊盘）。形成第一电介质层，包括印刷第一电介质前体层，该第一电介质前体层包括具有从衬底焊盘延伸到接合焊盘的第一液体载体溶剂的第一油墨。印刷第一互连前体层，其包括在从衬底焊盘延伸到接合焊盘的第一介电层上方具有第二液体载体的第二油墨。烧结或固化第一互连前体层至少去除第二液体载体以形成包括将各个衬底焊盘连接到各个焊盘的墨残余物的导电互连。

7. 发明授权

US09970831B2 Piezoelectric thin-film sensor 有权
公开(公告)号：US09970831B2
公开(公告)日：2018-05-15
申请号：US14618175
申请日：2015-02-10
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Wei-Yan Shih
IPC分类号： H01L41/09 , G01L1/16 , G01P15/09 , G01P15/12
CPC分类号： G01L1/16 , G01P15/09 , G01P15/123
摘要： A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.

8. 发明申请

US20170217759A1 WAFER LEVEL PACKAGING OF MEMS 审中-公开
公开(公告)号：US20170217759A1
公开(公告)日：2017-08-03
申请号：US15463246
申请日：2017-03-20
申请人： Texas Instruments Incorporated
发明人： Stuart M. Jacobsen , Wei-Yan Shih
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0051 , B81B2207/07 , B81B2207/097 , B81C1/00333 , B81C1/00349 , B81C1/00396 , B81C1/00523 , B81C1/00666
摘要： A MEMS device is formed by applying a lower polymer film to top surfaces of a common substrate containing a plurality of MEMS devices, and patterning the lower polymer film to form a headspace wall surrounding components of each MEMS device. Subsequently an upper polymer dry film is applied to top surfaces of the headspace walls and patterned to form headspace caps which isolate the components of each MEMS device. Subsequently, the MEMS devices are singulated to provide separate MEMS devices.

9. 发明授权

US09411159B2 Low cost window production for hermetically sealed optical packages 有权
公开(公告)号：US09411159B2
公开(公告)日：2016-08-09
申请号：US14672929
申请日：2015-03-30
申请人： Texas Instruments Incorporated
发明人： Wei-Yan Shih , Bradley M. Haskett
IPC分类号： G02B27/00 , B29D11/00 , G02B26/08 , B81B7/00 , C03C17/22 , C03C17/23 , C03C27/02
CPC分类号： G02B27/0006 , B29D11/0074 , B81B7/0077 , C03C17/22 , C03C17/23 , C03C27/02 , G02B26/0833 , Y10T29/49789 , Y10T29/49792
摘要： Disclosed embodiments demonstrate batch processing methods for producing optical windows for microdevices. The windows protect the active elements of the microdevice from contaminants, while allowing light to pass into and out of the hermetically sealed microdevice package. Windows may be batch produced, reducing the cost of production, by fusing multiple metal frames to a single sheet of glass. In order to allow windows to be welded atop packages, disclosed embodiments keep a lip of metal without any glass after the metal frames are fused to the sheet of glass. Several techniques may accomplish this goal, including grinding grooves in the glass to provide a gap that prevents fusion of the glass to the metal frames along the outside edges in order to form a lip. The disclosed batch processing techniques may allow for more efficient window production, taking advantage of the economy of scale.

10. 发明授权

US11740142B2 Piezoelectric thin-film sensor and use thereof 有权
公开(公告)号：US11740142B2
公开(公告)日：2023-08-29
申请号：US17486818
申请日：2021-09-27
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Wei-Yan Shih
IPC分类号： G01L1/16 , G01P15/09 , G01P15/12
CPC分类号： G01L1/16 , G01P15/09 , G01P15/123
摘要： A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式