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1. 发明授权

US09945891B2 Charge measuring device with integrated FET, capacitor, and charge accumulation device 有权
公开(公告)号：US09945891B2
公开(公告)日：2018-04-17
申请号：US14370805
申请日：2013-01-04
申请人： TECHNISCHE UNIVERSITAET BERLIN
发明人： Clemens Helfmeier , Christian Boit , Uwe Kerst
IPC分类号： G01R17/16 , G01R29/24 , G11C16/22 , G01R31/28
CPC分类号： G01R29/24 , G01R31/2884 , G11C16/22
摘要： A charge measuring device detects focused ion beam attacks on an integrated semiconductor circuit with a capacitor, a field effect transistor, and a charge collecting device all manufactured in the integrated semiconductor circuit and insulated from additional circuit elements. A first pole of the capacitor is conductively connected to the charge collecting device and a gate of the field effect transistor. When a voltage is applied to the second pole of the capacitor, a drain source current flows through the field effect transistor, and a relationship between the voltage and the drain source current is ascertained. A comparison of the relationship with a previously ascertained relationship indicates a change of the charge quantity stored in the capacitor by the charge collecting device.

2. 发明申请

US20140375303A1 CHARGE MEASURING DEVICE 有权
标题翻译：充电测量装置
公开(公告)号：US20140375303A1
公开(公告)日：2014-12-25
申请号：US14370805
申请日：2013-01-04
申请人： TECHNISCHE UNIVERSITAET BERLIN
发明人： Clemens Helfmeier , Christian Boit , Uwe Kerst
IPC分类号： G01R29/24
CPC分类号： G01R29/24 , G01R31/2884 , G11C16/22
摘要： A charge measuring device detects focused ion beam attacks on an integrated semiconductor circuit with a capacitor, a field effect transistor, and a charge collecting device all manufactured in the integrated semiconductor circuit and insulated from additional circuit elements. A first pole of the capacitor is conductively connected to the charge collecting device and a gate of the field effect transistor. When a voltage is applied to the second pole of the capacitor, a drain source current flows through the field effect transistor, and a relationship between the voltage and the drain source current is ascertained. A comparison of the relationship with a previously ascertained relationship indicates a change of the charge quantity stored in the capacitor by the charge collecting device.
摘要翻译：电荷测量装置利用电容器，场效应晶体管和电荷收集装置在集成半导体电路上检测聚焦的离子束攻击，全部在集成半导体电路中制造并与附加电路元件绝缘。电容器的第一极导电连接到电荷收集器件和场效应晶体管的栅极。当电压施加到电容器的第二极时，漏极电流流过场效应晶体管，并且确定电压和漏极电流之间的关系。与先前确定的关系的关系的比较表示由电荷收集装置改变存储在电容器中的电荷量。

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