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1. 发明申请

US20230027057A1 AMORPHOUS DIELECTRIC, CAPACITOR ELEMENT, AND ELECTRONIC DEVICE 有权
公开(公告)号：US20230027057A1
公开(公告)日：2023-01-26
申请号：US17858566
申请日：2022-07-06
申请人： TDK CORPORATION
发明人： Kumiko YAMAZAKI , Shuto KANO , Yuji UMEDA , Hiroki KITAMURA , Takeshi SHIBAHARA , Junichi YAMAZAKI
IPC分类号： H01G4/33 , H01G4/20
摘要： An amorphous dielectric includes a compound represented by A1+αBOxNy. −0.3≤α≤0.3, 0

2. 发明申请

US20210238037A1 DIELECTRIC THIN FILM, CAPACITOR ELEMENT, AND ELECTRONIC CIRCUIT BOARD 有权
公开(公告)号：US20210238037A1
公开(公告)日：2021-08-05
申请号：US17269698
申请日：2019-08-27
申请人： TDK CORPORATION
发明人： Kumiko YAMAZAKI , Wakiko SATO , Junichi YAMAZAKI
IPC分类号： C01B21/082 , H01G4/33 , H01G4/12 , H01G4/30 , H05K1/16 , H01L49/02 , C01G35/00 , C23C14/06
摘要： A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula AaBbOoNn, (o+n)/a

3. 发明申请

US20140378295A1 AMORPHOUS DIELECTRIC FILM AND ELECTRONIC COMPONENT 有权
标题翻译：非晶电介质膜和电子元件
公开(公告)号：US20140378295A1
公开(公告)日：2014-12-25
申请号：US14310212
申请日：2014-06-20
申请人： TDK Corporation
发明人： Toshihiko KANEKO , Saori TAKEDA , Yuki YAMASHITA , Junichi YAMAZAKI
IPC分类号： C04B35/057 , C04B35/465 , C04B35/49
CPC分类号： C04B35/49 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/6562 , H01L28/40
摘要： The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.
摘要翻译：本发明的目的在于提供一种非晶介质膜和电子元件，其中可以保持相对介电常数和静电电容的温度系数，并且即使电介质膜进一步薄化也可以提高耐电压。本发明的非晶质介电体膜的特征在于，由作为主成分的无定形组合物构成的电介质膜，其中，A含有选自Ba，Ca，Sr中的至少2种以上的元素， B含有Zr。当电介质膜的主要成分由（BaxCaySrz）α-B-O表示时，x，y和z分别满足0＆nlE; x＆nlE; 1,0，nlE; y＆nlE; 1,0和nlE; z＆nlE; 1的条件x + y + z = 1，x，y和z中的至少任意两个为0.1以上。当A / B由α表示时，0.5＆nlE;α＆nlE; 1.5。

4. 发明申请

US20190023616A1 POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITOR ELEMENT 审中-公开
公开(公告)号：US20190023616A1
公开(公告)日：2019-01-24
申请号：US16068762
申请日：2017-02-01
申请人： TDK CORPORATION
发明人： Kumiko YAMAZAKI , Hiroshi CHIHARA , Yuki NAGAMINE , Junichi YAMAZAKI
IPC分类号： C04B35/58 , C04B35/50 , C04B35/626 , C04B35/64 , C04B35/634 , H01G4/33 , H01G4/12 , H01L49/02
摘要： A polycrystalline dielectric thin film and capacitor element has a small dielectric loss tan δ. The polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n=5), where a/b>1 and n≥0.7.

5. 发明申请

US20210241974A1 THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD 有权
公开(公告)号：US20210241974A1
公开(公告)日：2021-08-05
申请号：US17270080
申请日：2019-08-27
申请人： TDK CORPORATION
发明人： Kumiko YAMAZAKI , Takeshi SHIBAHARA , Junichi YAMAZAKI
IPC分类号： H01G4/12 , H01G4/33 , H05K1/16 , H01G4/30
摘要： A thin film capacitor for which electrode conductivity is high and electrode irregularities are unlikely to be generate even if the capacitor if heated up to 700° C. This thin film capacitor has a first electrode, a dielectric layer, and a second electrode. The dielectric layer contains an ABO2N-type oxynitride. The nitrogen concentration of the part of the dielectric layer that contacts the first electrode is no more than half the nitrogen concentration of the center part of the dielectric layer.

6. 发明申请

US20190144341A1 METAL OXYNITRIDE THIN FILM, PROCESS FOR PRODUCING METAL OXYNITRIDE THIN FILM, AND CAPACITOR ELEMENT 审中-公开
公开(公告)号：US20190144341A1
公开(公告)日：2019-05-16
申请号：US16185498
申请日：2018-11-09
申请人： TDK CORPORATION
发明人： Kumiko YAMAZAKI , Yuki NAGAMINE , Takeshi SHIBAHARA , Yuji UMEDA , Junichi YAMAZAKI
IPC分类号： C04B35/58 , H01G4/12
摘要： A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A1+αBOx+αNy wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

7. 发明申请

US20190019622A1 POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITOR ELEMENT 审中-公开
公开(公告)号：US20190019622A1
公开(公告)日：2019-01-17
申请号：US16069095
申请日：2017-02-01
申请人： TDK CORPORATION
发明人： Kumiko YAMAZAKI , Hiroshi CHIHARA , Yuki NAGAMINE , Junichi YAMAZAKI , Yuji UMEDA
IPC分类号： H01G4/08 , H01G4/33 , C30B29/10 , C01B21/082
摘要： A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

8. 发明申请

US20160141486A1 PIEZOELECTRIC COMPOSITION AND PIEZOELECTRIC DEVICE 有权
标题翻译：压电组合物和压电器件
公开(公告)号：US20160141486A1
公开(公告)日：2016-05-19
申请号：US14201515
申请日：2014-03-07
申请人： TDK CORPORATION
发明人： Taku MASAI , Masamitsu HAEMORI , Masahito FURUKAWA , Junichi YAMAZAKI , Kouhei OHHASHI
IPC分类号： H01L41/187 , H01L41/08
CPC分类号： H01L41/1878 , C04B35/475 , H01L41/0805 , H01L41/316
摘要： Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.
摘要翻译：本发明提供一种压电组合物，其含有主要成分为钙钛矿型氧化物，其由不含Pb的通式ABO3表示，具有含有Bi，Na，K的A位点和含有Ti的B位点。 Ti部分被选自Mn，Cr，Fe和Co中的至少一种的过渡金属元素Me所取代。钙钛矿型氧化物中Bi和过渡金属元素Me的含量为主要组分按Biu1MeO3计为6摩尔％至43摩尔％。

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