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1. 发明申请

US20090309096A1 THIN-FILM TRANSISTOR AND THIN-FILM DIODE HAVING AMORPHOUS-OXIDE SEMICONDUCTOR LAYER 有权
标题翻译：具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
公开(公告)号：US20090309096A1
公开(公告)日：2009-12-17
申请号：US12263157
申请日：2008-10-31
申请人： TATSUYA IWASAKI
发明人： TATSUYA IWASAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
摘要翻译：一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层的沟道层，折射率为nt，其中nx> nt的关系。一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

2. 发明申请

US20110114947A1 THIN-FILM TRANSISTOR AND THIN-FILM DIODE HAVING AMORPHOUS-OXIDE SEMICONDUCTOR LAYER 有权
标题翻译：具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
公开(公告)号：US20110114947A1
公开(公告)日：2011-05-19
申请号：US13012125
申请日：2011-01-24
申请人： TATSUYA IWASAKI
发明人： TATSUYA IWASAKI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
摘要翻译：一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层的沟道层，折射率为nt，其中nx> nt的关系。一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

3. 发明申请

US20100267198A1 FIELD EFFECT TRANSISTOR MANUFACTURING METHOD 审中-公开
标题翻译：场效应晶体管制造方法
公开(公告)号：US20100267198A1
公开(公告)日：2010-10-21
申请号：US12824568
申请日：2010-06-28
申请人： HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
发明人： HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
IPC分类号： H01L21/36
CPC分类号： H01L29/78618 , H01L29/66969 , H01L29/78693
摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译：提供一种用于制造场效应晶体管的新颖方法。在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

4. 发明申请

US20070216287A1 LIGHT EMITTING DEVICE AND METHOD OF PRODUCING A LIGHT EMITTING DEVICE 有权
标题翻译：发光装置及产生发光装置的方法
公开(公告)号：US20070216287A1
公开(公告)日：2007-09-20
申请号：US11677251
申请日：2007-02-21
申请人： NAHO ITAGAKI , TOMOYUKI OIKE , TATSUYA IWASAKI , TORU DEN
发明人： NAHO ITAGAKI , TOMOYUKI OIKE , TATSUYA IWASAKI , TORU DEN
IPC分类号： H05B33/14 , H01L51/50 , H05B33/00
CPC分类号： H05B33/14 , C09K11/642 , C09K11/883
摘要： To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.
摘要翻译：为了提供发光效率优异的直流驱动型无机发光装置，提供了一种发光装置，包括：基板; 以及层叠在所述基板上的第一层和第二层，其中所述第二层由包含Zn的第一部分和选自S和Se的至少一种元素作为其构成元素形成; 和含有选自Cu和Ag中的至少一种元素的第二部分和选自S和Se的至少一种元素作为其组成元素; 第一层由由至少一种选自S和Se的元素和Zn形成的发光层制成; 并且在第二层中，第二部分具有平行于基板的横截面朝向第一层逐渐变细的横截面。

5. 发明申请

US20070051924A1 FLUORESCENT MATERIAL, FLUORESCENT SUBSTANCE, DISPLAY, AND PROCESS FOR PREPARING FLUORESCENT SUBSTANCE 审中-公开
标题翻译：荧光物质，荧光物质，显示和制备荧光物质的方法
公开(公告)号：US20070051924A1
公开(公告)日：2007-03-08
申请号：US11469553
申请日：2006-09-01
申请人： TOMOYUKI OIKE , YOSHIHIRO OHASHI , TATSUYA IWASAKI
发明人： TOMOYUKI OIKE , YOSHIHIRO OHASHI , TATSUYA IWASAKI
IPC分类号： C09K11/08 , H01J1/62 , H01J63/04 , C09K11/66
CPC分类号： C09K11/7734 , H01J29/20 , H01J29/24 , H01J31/127 , Y10T428/24628
摘要： The present invention aims at providing a novel oxide fluorescent material. The novel oxide fluorescent material is a fluorescent material including: as constituent elements, at least one or more elements selected from the group consisting of Mg, Ca, Sr and Ba; at least one or more elements selected from the group consisting of Si and Ge; at least one or more elements selected from the group consisting of rare earth elements; and oxygen, wherein the crystal structure is a pseudowollastonite crystal structure. The fluorescent substance includes a layer 54 comprised of the fluorescent material and a layer 52 including at least one or more elements selected from the group consisting of Si and Ge, the layers stacked on a substrate 51. The fluorescent substance includes an adjacent layer that includes at least one or more elements selected from the group consisting of Si and Ge and is in contact with the portion constituted by the fluorescent material.
摘要翻译：本发明的目的在于提供一种新的氧化物荧光材料。新型氧化物荧光体是荧光体，作为构成要素，选自Mg，Ca，Sr和Ba中的至少一种以上的元素; 选自Si和Ge中的至少一种或多种元素; 选自由稀土元素组成的组中的至少一种以上的元素; 和氧，其中所述晶体结构是假硅灰石晶体结构。荧光物质包括由荧光材料构成的层54和包含选自Si和Ge中的至少一种或多种元素的层52，层叠在基板51上。荧光物质包括包含从由Si和Ge组成的组中选择的至少一种或多种元素并且与由荧光材料构成的部分接触的相邻层。

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