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1. 发明授权

US5977638A Edge metal for interconnect layers 失效
标题翻译：用于互连层的边缘金属
公开(公告)号：US5977638A
公开(公告)日：1999-11-02
申请号：US754521
申请日：1996-11-21
申请人： T. J. Rodgers , Sam Geha , Chris Petti , Ting-Pwu Yen
发明人： T. J. Rodgers , Sam Geha , Chris Petti , Ting-Pwu Yen
IPC分类号： H01L21/3205 , H01L21/768 , H01L21/8244 , H01L23/528 , H01L27/11 , H01L23/48 , H01L21/44
CPC分类号： H01L27/11 , H01L21/32051 , H01L21/76838 , H01L21/76885 , H01L23/528 , H01L27/1104 , H01L2924/0002
摘要： A method of forming edge metal lines to interconnect features in a semiconductor device. One embodiment comprises the steps of: patterning a first insulating layer to form a first feature having a first sidewall; depositing a metal layer over the first feature; and etching the metal layer so that a first edge metal line is formed adjacent to the first sidewall. The edge metal line may be substantially anisotropically etched to form the edge metal line. The edge metal line may comprise a plurality of metal layers. The edge metal line may also interconnect features in a semiconductor device (e.g., contacts). The method may further comprise the step of forming a protective coating over a portion of the metal layer such that the etching step may form a metal interconnect line and the edge metal line from the same metal layer. The metal interconnect line may comprise a bus that may have more current carrying capacity than the edge metal line.
摘要翻译：一种形成边缘金属线以在半导体器件中互连特征的方法。一个实施例包括以下步骤：图案化第一绝缘层以形成具有第一侧壁的第一特征; 在第一特征上沉积金属层; 并且蚀刻所述金属层，使得与所述第一侧壁相邻地形成第一边缘金属线。边缘金属线可以被基本上各向异性地蚀刻以形成边缘金属线。边缘金属线可以包括多个金属层。边缘金属线还可以互连半导体器件（例如，触点）中的特征。该方法还可以包括在金属层的一部分上形成保护涂层的步骤，使得蚀刻步骤可以从同一金属层形成金属互连线和边缘金属线。金属互连线可以包括可以具有比边缘金属线更多的载流能力的总线。

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