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1. 发明授权

US08828322B2 Device and method for measuring prothrombin time and hematocrit by analyzing change in reactance in a sample 有权
标题翻译：通过分析样品中电抗的变化来测量凝血酶原时间和血细胞比容的装置和方法
公开(公告)号：US08828322B2
公开(公告)日：2014-09-09
申请号：US13156693
申请日：2011-06-09
申请人： Sz-Hau Chen , Yueh-Hui Lin , Ching-Yuan Chu , Chu-Ming Cheng , Guan-Ting Chen , Yi-Chen Lu , Thomas Y.S. Shen
发明人： Sz-Hau Chen , Yueh-Hui Lin , Ching-Yuan Chu , Chu-Ming Cheng , Guan-Ting Chen , Yi-Chen Lu , Thomas Y.S. Shen
IPC分类号： G01N15/06
CPC分类号： G01N33/4905 , G01N27/447 , G01N2800/224 , Y10T436/11
摘要： Devices and methods for measuring prothrombin time (PT) and hematocrit (HCT) by analyzing the change in reactance in a sample are presented. A diagnostic device for measuring HCT and PT of a fluid includes a relative electrode-type sensor device and a blood test card assembly including one or more pairs of electrodes, wherein alternating current (AC) provided by the sensor device is used to measure and calculate HCT and PT of blood test using the reactance analysis.
摘要翻译：提出了通过分析样品电抗变化来测量凝血酶原时间（PT）和血细胞比容（HCT）的装置和方法。用于测量流体的HCT和PT的诊断装置包括相对电极型传感器装置和包括一对或多对电极的血液测试卡组件，其中由传感器装置提供的交流电（AC）用于测量和计算 HCT和PT血液检测采用电抗分析。

2. 发明申请

US20110303556A1 DEVICE AND METHOD FOR MEASURING PROTHROMBIN TIME AND HEMATOCRIT BY ANALYZING CHANGE IN REACTANCE IN A SAMPLE 有权
标题翻译：通过分析样品在样品中的变化来测量丙泊酚时间和HEMATOCRIT的装置和方法
公开(公告)号：US20110303556A1
公开(公告)日：2011-12-15
申请号：US13156693
申请日：2011-06-09
申请人： Sz-Hau Chen , Yueh-Hui Lin , Ching-Yuan Chu , Chu-Ming Cheng , Guan-Ting Chen , Yi-Chen Lu , Thomas Y.S, Shen
发明人： Sz-Hau Chen , Yueh-Hui Lin , Ching-Yuan Chu , Chu-Ming Cheng , Guan-Ting Chen , Yi-Chen Lu , Thomas Y.S, Shen
IPC分类号： G01N33/86 , G01N27/26
CPC分类号： G01N33/4905 , G01N27/447 , G01N2800/224 , Y10T436/11
摘要： Devices and methods for measuring prothrombin time (PT) and hematocrit (HCT) by analyzing the change in reactance in a sample are presented. A diagnostic device for measuring HCT and PT of a fluid includes a relative electrode-type sensor device and a blood test card assembly including one or more pairs of electrodes, wherein alternating current (AC) provided by the sensor device is used to measure and calculate HCT and PT of blood test using the reactance analysis.
摘要翻译：提出了通过分析样品电抗变化来测量凝血酶原时间（PT）和血细胞比容（HCT）的装置和方法。用于测量流体的HCT和PT的诊断装置包括相对电极型传感器装置和包括一对或多对电极的血液测试卡组件，其中由传感器装置提供的交流电（AC）用于测量和计算 HCT和PT血液检测采用电抗分析。

3. 发明申请

US20090078588A1 ELECTROCHEMICAL QUANTITATIVE ANALYSIS SYSTEM AND METHOD FOR THE SAME 有权
标题翻译：电化学定量分析系统及其相关方法
公开(公告)号：US20090078588A1
公开(公告)日：2009-03-26
申请号：US12234659
申请日：2008-09-21
申请人： Yueh-Hui Lin , Guan-Ting Chen , Te-Ho Chen , Ching-Yuan Chu , Jui-Ping Wang , Cheng Allen Chang , Thomas Y.S. Shen
发明人： Yueh-Hui Lin , Guan-Ting Chen , Te-Ho Chen , Ching-Yuan Chu , Jui-Ping Wang , Cheng Allen Chang , Thomas Y.S. Shen
IPC分类号： G01N27/26 , G01N27/327
CPC分类号： G01N27/3273 , G01N27/3274 , G01N33/48771
摘要： A system for electrochemical quantitative analysis is provided. The system includes a measuring apparatus having a plurality of analysis modes. Each of the analysis modes is for quantitatively analyzing different biochemical substance. The system further includes a plurality of test strips. Each of the test strips has a different identification component for a different analysis mode. When one of the plurality of test strips is selected to electronically connect to the measuring apparatus, the measuring apparatus executes one of the plurality of analysis modes according to the identification component of the selected test strip to quantitatively analyze a corresponding biochemical substance.
摘要翻译：提供了一种电化学定量分析系统。该系统包括具有多个分析模式的测量装置。每种分析模式用于定量分析不同的生物化学物质。该系统还包括多个测试条。每个测试条具有用于不同分析模式的不同识别组件。当选择多个测试条中的一个电子连接到测量装置时，测量装置根据所选择的测试条的识别部件执行多个分析模式中的一个，以定量分析相应的生物化学物质。

4. 发明授权

US08409424B2 Electrochemical test strip, electrochemical test system, and measurement method using the same 有权
标题翻译：电化学试片，电化学试验系统及使用其的测量方法
公开(公告)号：US08409424B2
公开(公告)日：2013-04-02
申请号：US12641406
申请日：2009-12-18
申请人： Guan-Ting Chen , Yueh-Hui Lin , Kai-Tsung Teng , Sz-Hau Chen , Thomas Y. S. Shen
发明人： Guan-Ting Chen , Yueh-Hui Lin , Kai-Tsung Teng , Sz-Hau Chen , Thomas Y. S. Shen
IPC分类号： G01N27/327
CPC分类号： G01N27/3274
摘要： An electrochemical test strip, an electrochemical test system, and a measurement method using the same are provided. The electrochemical test strip includes an insulating substrate, an electrode system formed on the insulating substrate, and an insulating layer formed on the electrode system. The electrode system includes a set of measurement electrodes, a set of identifying electrodes, and a resistive path having a predetermined resistance value. The set of identifying electrodes is made of metal material, and the resistive path is made of non-metal material. The set of measurement electrodes includes a reference electrode and a working electrode insulated from each other, and the set of identifying electrodes includes a first identifying electrode and a second identifying electrode connected with each other through the resistive path. The insulating layer covers a part of the electrode system, wherein a part of the electrode system not covered by the insulating layer forms a reaction region with a supply port. When a sample is injected into the supply port of the reaction region, the injected sample reaches the set of measurement electrodes and the set of identifying electrodes in sequence.
摘要翻译：提供电化学测试条，电化学测试系统以及使用其的测量方法。电化学测试条包括绝缘基板，形成在绝缘基板上的电极系统和形成在电极系统上的绝缘层。电极系统包括一组测量电极，一组识别电极和具有预定电阻值的电阻路径。该组识别电极由金属材料制成，电阻路径由非金属材料制成。该组测量电极包括彼此绝缘的参考电极和工作电极，并且该组识别电极包括通过电阻路径彼此连接的第一识别电极和第二识别电极。绝缘层覆盖电极系统的一部分，其中未被绝缘层覆盖的电极系统的一部分与供给端口形成反应区域。当将样品注入反应区域的供给口时，注入的样品依次到达测量电极组和识别电极组。

5. 发明授权

US08613850B2 Electrochemical quantitative analysis system and method for the same 有权
标题翻译：电化学定量分析系统及方法相同
公开(公告)号：US08613850B2
公开(公告)日：2013-12-24
申请号：US12234659
申请日：2008-09-21
申请人： Yueh-Hui Lin , Guan-Ting Chen , Te-Ho Chen , Ching-Yuan Chu , Jui-Ping Wang , Cheng Allen Chang , Thomas Y. S. Shen
发明人： Yueh-Hui Lin , Guan-Ting Chen , Te-Ho Chen , Ching-Yuan Chu , Jui-Ping Wang , Cheng Allen Chang , Thomas Y. S. Shen
IPC分类号： G01N27/327
CPC分类号： G01N27/3273 , G01N27/3274 , G01N33/48771
摘要： A system for electrochemical quantitative analysis is provided. The system includes a measuring apparatus having a plurality of analysis modes. Each of the analysis modes is for quantitatively analyzing different biochemical substance. The system further includes a plurality of test strips. Each of the test strips has a different identification component for a different analysis mode. When one of the plurality of test strips is selected to electronically connect to the measuring apparatus, the measuring apparatus executes one of the plurality of analysis modes according to the identification component of the selected test strip to quantitatively analyze a corresponding biochemical substance.
摘要翻译：提供了一种电化学定量分析系统。该系统包括具有多个分析模式的测量装置。每种分析模式用于定量分析不同的生物化学物质。该系统还包括多个测试条。每个测试条具有用于不同分析模式的不同识别组件。当选择多个测试条中的一个电子连接到测量装置时，测量装置根据所选择的测试条的识别部件执行多个分析模式中的一个，以定量分析相应的生物化学物质。

6. 发明申请

US20070286944A1 FABRICATION OF FULL-COLOR OLED PANEL USING MICRO-CAVITY STRUCTURE 审中-公开
标题翻译：使用微孔结构的全彩色OLED面板的制造
公开(公告)号：US20070286944A1
公开(公告)日：2007-12-13
申请号：US11469848
申请日：2006-09-01
申请人： Meiso Yokoyama , Guan-Ting Chen , Wei-Chen Zhan
发明人： Meiso Yokoyama , Guan-Ting Chen , Wei-Chen Zhan
IPC分类号： B05D5/12 , B05D5/06
CPC分类号： H01L51/5265 , H01L27/3213 , H01L51/5088 , H01L2251/558
摘要： Methods of making top-emitting or bottom-emitting full-color OLED flat panel using micro-cavity structure for primary colors are disclosed. The primary colors are realized by setting a different thickness for the hole injection layer of the OLEDs for each primary color, while keeping the thickness of the hole transport layer, the emission layer, the electron transport layer the same for all the OLEDs. Steps for predetermining the respective thickness of the hole injection layer for each primary color are also disclosed.
摘要翻译：公开了使用用于原色的微腔结构的顶部发射或底部发射全色OLED平板的方法。通过为每个原色设置用于OLED的空穴注入层的不同厚度，同时保持空穴传输层，发光层，电子传输层的厚度对于所有OLED都是相同的，可以实现原色。还公开了用于预定每个原色的空穴注入层的相应厚度的步骤。

7. 发明申请

US20050226297A1 [SEMICONDUCTOR LASER DEVICE STRUCTURE AND METHOD OF MANUFACTURING THE SAME] 失效
标题翻译： [半导体激光器件结构及其制造方法]
公开(公告)号：US20050226297A1
公开(公告)日：2005-10-13
申请号：US10710843
申请日：2004-08-06
申请人： Hung-Cheng Lin , Jen-Inn Chyi , Guan-Ting Chen
发明人： Hung-Cheng Lin , Jen-Inn Chyi , Guan-Ting Chen
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/22
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2214
摘要： A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.
摘要翻译：提供一种制造半导体激光器件的方法。首先，在外延结构上形成第一掩模层以限定脊结构中的突出区域。此后，在外延结构上形成保形第二掩模层以覆盖第一掩模层。在第二掩模层上形成第三掩模层。暴露的第二掩模层被去除。使用第一和第三掩模层作为蚀刻掩模，去除外延结构的一部分。去除第三掩模层和剩余的第二掩模层以形成脊结构。在外延结构上形成绝缘层，然后去除第一掩模层以暴露突出区域的顶表面。导电层形成在外延结构上，使得其与突出区域的顶表面接触。

8. 发明授权

US08048786B2 Method for fabricating single-crystalline substrate containing gallium nitride 有权
标题翻译：制造含有氮化镓的单晶衬底的方法
公开(公告)号：US08048786B2
公开(公告)日：2011-11-01
申请号：US12263555
申请日：2008-11-03
申请人： Jen-Inn Chyi , Guan-Ting Chen , Hsueh-Hsing Liu
发明人： Jen-Inn Chyi , Guan-Ting Chen , Hsueh-Hsing Liu
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , C30B25/02 , C30B25/18 , C30B29/406 , H01L21/02381 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing GaN as a mask to etch the substrate and form an uneven host substrate. Then, perform epitaxy on the uneven host substrate to make the islands containing GaN grow in size and merge into a continuous single-crystalline film containing GaN. Finally, separate the single-crystalline film containing GaN from the uneven host substrate to obtain the single-crystalline substrate containing GaN. According to the present invention, process time can be saved and yield can be improved.
摘要翻译：本发明提供一种制造含有氮化镓（GaN）的单晶衬底的方法，包括以下步骤。首先，在主体基板上形成多个含有GaN的岛。接下来，使用包含GaN的多个岛作为掩模来蚀刻衬底并形成不均匀的主体衬底。然后，在不均匀的主体衬底上进行外延，使含有GaN的岛尺寸增长并且合并成含有GaN的连续单晶膜。最后，从不均匀的主体衬底上分离含有GaN的单晶膜，得到含有GaN的单晶衬底。根据本发明，可以节省加工时间，提高成品率。

9. 发明申请

US20100068872A1 Method for Fabricating Single-Crystalline Substrate Containing Gallium Nitride 有权
标题翻译：制造含有氮化镓的单晶基板的方法
公开(公告)号：US20100068872A1
公开(公告)日：2010-03-18
申请号：US12263555
申请日：2008-11-03
申请人： Jen-Inn Chyi , Guan-Ting Chen , Hsueh-Hsing Liu
发明人： Jen-Inn Chyi , Guan-Ting Chen , Hsueh-Hsing Liu
IPC分类号： H01L21/205
CPC分类号： H01L21/0237 , C30B25/02 , C30B25/18 , C30B29/406 , H01L21/02381 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： The present invention provides a method for fabricating a single-crystalline substrate containing gallium nitride (GaN) comprising the following steps. First, form a plurality of island containing GaN on a host substrate. Next, use the plurality of islands containing GaN as a mask to etch the substrate and form an uneven host substrate. Then, perform epitaxy on the uneven host substrate to make the islands containing GaN grow in size and merge into a continuous single-crystalline film containing GaN. Finally, separate the single-crystalline film containing GaN from the uneven host substrate to obtain the single-crystalline substrate containing GaN. According to the present invention, process time can be saved and yield can be improved.
摘要翻译：本发明提供一种制造含有氮化镓（GaN）的单晶衬底的方法，包括以下步骤。首先，在主体基板上形成多个含有GaN的岛。接下来，使用包含GaN的多个岛作为掩模来蚀刻衬底并形成不均匀的主体衬底。然后，在不平坦的主体衬底上进行外延，使含有GaN的岛尺寸增长并且合并成含有GaN的连续单晶膜。最后，从不均匀的主体衬底上分离含有GaN的单晶膜，得到含有GaN的单晶衬底。根据本发明，可以节省加工时间，提高成品率。

10. 发明授权

US07445949B2 Method of manufacturing semiconductor laser device structure 失效
标题翻译：制造半导体激光器件结构的方法
公开(公告)号：US07445949B2
公开(公告)日：2008-11-04
申请号：US10710843
申请日：2004-08-06
申请人： Hung-Cheng Lin , Jen-Inn Chyi , Guan-Ting Chen
发明人： Hung-Cheng Lin , Jen-Inn Chyi , Guan-Ting Chen
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2214
摘要： A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to cover the first mask layer. A third mask layer is formed over the second mask layer. The exposed second mask layer is removed. Using the first and the third mask layers as etching masks, a portion of the epitaxial structure is removed. The third mask layer and the remaining second mask layer are removed to form the ridge structure. An insulation layer is formed on the epitaxial structure and then the first mask layer is removed to expose the top surface of the protrudent area. A conductive layer is formed on the epitaxial structure such that it contacts with the top surface of the protrudent area.
摘要翻译：提供一种制造半导体激光器件的方法。首先，在外延结构上形成第一掩模层以限定脊结构中的突出区域。此后，在外延结构上形成保形第二掩模层以覆盖第一掩模层。在第二掩模层上形成第三掩模层。暴露的第二掩模层被去除。使用第一和第三掩模层作为蚀刻掩模，去除外延结构的一部分。去除第三掩模层和剩余的第二掩模层以形成脊结构。在外延结构上形成绝缘层，然后去除第一掩模层以暴露突出区域的顶表面。导电层形成在外延结构上，使得其与突出区域的顶表面接触。

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