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1. 发明授权

US07902941B2 Laminate type band pass filter and diplexer using the same 有权
标题翻译：层叠型带通滤波器和使用其的双工器
公开(公告)号：US07902941B2
公开(公告)日：2011-03-08
申请号：US12111395
申请日：2008-04-29
申请人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
发明人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
IPC分类号： H01P1/203 , H01P1/213
CPC分类号： H01P1/20345
摘要： It is possible to generate an additionally attenuation pole in a laminate type band pass filter without adding an attenuation circuit and improve the attenuation characteristics of the laminate type band pass filter by independently controlling the frequencies of the attenuation poles. A diplexer is realized by using at least such a filter. The laminate type band pass filter includes a plurality of first resonators adapted to resonate in a predetermined pass band and arranged in a laminate, the first resonators being mutually electromagnetic field coupled, each of the first resonators having a first inductor conductor, a second inductor conductor and a conductor to be capacitive-coupled to a grounding conductor, the second inductor conductor and the conductor to be capacitive-coupled to the grounding conductor forming a second serial resonator in each of the first resonators, the notch frequency of the second serial resonator being set in a frequency band higher than the resonance frequency band of the first resonator.
摘要翻译：通过独立地控制衰减极的频率，可以在不添加衰减电路的层叠型带通滤波器中产生额外的衰减极，并提高层叠型带通滤波器的衰减特性。通过使用至少这种滤波器来实现双工器。层叠型带通滤波器包括多个第一谐振器，其适于以预定通带谐振并且布置在层压体中，第一谐振器是相互电磁场耦合的，每个第一谐振器具有第一电感器导体，第二电感器导体以及电容耦合到接地导体的导体，所述第二电感器导体和所述导体将被电容耦合到所述接地导体，在所述第一谐振器中的每一个中形成第二串联谐振器，所述第二串联谐振器的陷波频率为设置在比第一谐振器的谐振频带高的频带中。

2. 发明授权

US07924116B2 Diplexer and multiplexer using the same 有权
标题翻译：双工器和多路复用器使用它
公开(公告)号：US07924116B2
公开(公告)日：2011-04-12
申请号：US12017975
申请日：2008-01-22
申请人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
发明人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
IPC分类号： H01P5/12
CPC分类号： H01P1/2135 , H03H7/0123 , H03H7/1758 , H03H7/1766 , H03H7/1783 , H03H7/1791 , H03H7/463 , H03H2001/0085
摘要： A diplexer provides a high degree of design freedom for satisfying the requirements of electric characteristics so as to realize desired characteristics and at the same time can be downsized and a multiplexer is realized by using such a diplexer. The diplexer includes a filter having a first pass band and a filter having a second pass band with a frequency band at least twice as high as the frequency band of the first pass band, the filter having the first pass band being a filter of the lumped constant type, the filter having the second pass band being a filter of the distributed constant type.
摘要翻译：双工器提供了高度的设计自由度，以满足电特性的要求，从而实现期望的特性，同时可以减小尺寸，并且通过使用这种双工器来实现多路复用器。双工器包括具有第一通带的滤波器和具有第二通带的滤波器，该通带的频带至少是第一通带的频带的两倍，该滤波器具有第一通带是集总滤波器常数型，具有第二通带的滤波器是分布常数型滤波器。

3. 发明申请

US20080272855A1 LAMINATE TYPE BAND PASS FILTER AND DIPLEXER USING THE SAME 有权
标题翻译：层压型带通滤芯和使用它的DIPLEX
公开(公告)号：US20080272855A1
公开(公告)日：2008-11-06
申请号：US12111395
申请日：2008-04-29
申请人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
发明人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
IPC分类号： H01P1/213 , H03H7/01
CPC分类号： H01P1/20345
摘要： It is possible to generate an additionally attenuation pole in a laminate type band pass filter without adding an attenuation circuit and improve the attenuation characteristics of the laminate type band pass filter by independently controlling the frequencies of the attenuation poles. A diplexer is realized by using at least such a filter. The laminate type band pass filter includes a plurality of first resonators adapted to resonate in a predetermined pass band and arranged in a laminate, the first resonators being mutually electromagnetic field coupled, each of the first resonators having a first inductor conductor, a second inductor conductor and a conductor to be capacitive-coupled to a grounding conductor, the second inductor conductor and the conductor to be capacitive-coupled to the grounding conductor forming a second serial resonator in each of the first resonators, the notch frequency of the second serial resonator being set in a frequency band higher than the resonance frequency band of the first resonator.
摘要翻译：通过独立地控制衰减极的频率，可以在不添加衰减电路的层叠型带通滤波器中产生额外的衰减极，并提高层叠型带通滤波器的衰减特性。通过使用至少这种滤波器来实现双工器。层叠型带通滤波器包括多个第一谐振器，其适于以预定通带谐振并且布置在层压体中，第一谐振器是相互电磁场耦合的，每个第一谐振器具有第一电感器导体，第二电感器导体以及电容耦合到接地导体的导体，所述第二电感器导体和所述导体将被电容耦合到所述接地导体，在所述第一谐振器中的每一个中形成第二串联谐振器，所述第二串联谐振器的陷波频率为设置在比第一谐振器的谐振频带高的频带中。

4. 发明申请

US20080174386A1 DIPLEXER AND MULTIPLEXER USING THE SAME 有权
标题翻译：使用相同的DIPLEX和多路复用器
公开(公告)号：US20080174386A1
公开(公告)日：2008-07-24
申请号：US12017975
申请日：2008-01-22
申请人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
发明人： Syouji Ono , Tetsuo Suehiro , Jyunichi Ichikawa , Keiji Takagi , Manabu Sato
IPC分类号： H03H7/46
CPC分类号： H01P1/2135 , H03H7/0123 , H03H7/1758 , H03H7/1766 , H03H7/1783 , H03H7/1791 , H03H7/463 , H03H2001/0085
摘要： A diplexer provides a high degree of design freedom for satisfying the requirements of electric characteristics so as to realize desired characteristics and at the same time can be downsized and a multiplexer is realized by using such a diplexer. The diplexer includes a filter having a first pass band and a filter having a second pass band with a frequency band at least twice as high as the frequency band of the first pass band, the filter having the first pass band being a filter of the lumped constant type, the filter having the second pass band being a filter of the distributed constant type.
摘要翻译：双工器提供了高度的设计自由度，以满足电特性的要求，从而实现期望的特性，同时可以减小尺寸，并且通过使用这种双工器来实现多路复用器。双工器包括具有第一通带的滤波器和具有第二通带的滤波器，该通带的频带至少是第一通带的频带的两倍，该滤波器具有第一通带是集总滤波器常数型，具有第二通带的滤波器是分布常数型滤波器。

5. 发明授权

US09266715B2 SOI wafer, manufacturing method therefor, and MEMS device 有权
公开(公告)号：US09266715B2
公开(公告)日：2016-02-23
申请号：US14193209
申请日：2014-02-28
申请人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
发明人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
IPC分类号： H01L21/00 , B81B7/00 , H01L21/762 , H01L29/16 , B81B3/00 , B81C1/00 , H01L23/26
CPC分类号： B81B7/0038 , B81B3/0018 , B81C1/00285 , H01L21/76259 , H01L23/26 , H01L29/16 , H01L2924/0002 , H01L2924/00
摘要： In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

6. 发明授权

US09212049B2 SOI wafer, manufacturing method therefor, and MEMS device 有权
标题翻译： SOI晶片，其制造方法和MEMS器件
公开(公告)号：US09212049B2
公开(公告)日：2015-12-15
申请号：US13743878
申请日：2013-01-17
申请人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
发明人： Eiji Yoshikawa , Jyunichi Ichikawa , Yukihisa Yoshida
IPC分类号： H01L21/00 , B81B7/00 , H01L21/762 , H01L29/16 , B81B3/00 , B81C1/00 , H01L23/26
CPC分类号： B81B7/0038 , B81B3/0018 , B81C1/00285 , H01L21/76259 , H01L23/26 , H01L29/16 , H01L2924/0002 , H01L2924/00
摘要： In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.
摘要翻译：为了获得具有优异的金属杂质吸收能力的SOI晶片，提供了一种制造SOI晶片的有效方法和使用这种SOI晶片的高可靠性MEMS器件，其包括：支撑晶片（1）以及与它们之间的氧化膜（3）结合在一起的有源层晶片（6），所述支撑晶片（1）和所述有源层晶片（6）中的每一个都是硅晶片; 形成在所述硅晶片中的至少一个的接合面中的空腔（1b）以及形成在与所述接合面相反的一侧的表面上的吸气材料（2）。

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