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    • 5. 发明授权
    • Magnetic sensor formed of magnetoresistance effect elements
    • 磁传感器由磁阻效应元件形成
    • US07589528B2
    • 2009-09-15
    • US11682841
    • 2007-03-06
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • Hideki SatoToshiyuki OohashiYukio WakuiSusumu YoshidaKokichi Aiso
    • G01R33/02
    • B82Y25/00B82Y40/00G01R33/09G01R33/093H01F41/302Y10T29/49002Y10T29/49037Y10T428/32
    • On a single chip are formed a plurality of magnetoresistance effect elements provided with pinned layers having fixed magnetization axes in the directions that cross each other. On a substrate 10 are formed magnetic layers that will become two magnetic tunnel effect elements 11, 21 as magnetoresistance effect elements. Magnetic-field-applying magnetic layers made of NiCo are formed to sandwich the magnetic layers in plan view. A magnetic field is applied to the magnetic-field-applying magnetic layers. The magnetic field is removed after the magnetic-field-applying magnetic layers are magnetized in the direction shown by arrow A. As a result of this, by the residual magnetization of the magnetic-field-applying magnetic layers, magnetic fields in the directions shown by arrows B are applied to the magnetic layers that will become magnetic tunnel effect elements 11, 21, whereby the magnetization of the pinned layers of the magnetic layers that will become magnetic tunnel effect elements 11, 21 is pinned in the directions shown by arrows B.
    • 在单个芯片上形成有多个磁阻效应元件,该元件具有在彼此交叉的方向上具有固定的磁化轴的固定层。 在基板10上形成作为磁阻效应元件的两个磁隧道效应元件11,21的磁性层。 形成由NiCo制成的磁场施加磁性层,以在平面图中夹着磁性层。 对磁场施加磁性层施加磁场。 在磁场施加磁性层沿着箭头A所示的方向被磁化之后,去除磁场。结果,通过磁场施加磁性层的剩余磁化,所示方向上的磁场 通过箭头B施加到将成为磁隧道效应元件11,21的磁性层,由此将成为磁隧道效应元件11,21的磁性层的被钉扎层的磁化被固定在箭头B所示的方向上 。