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1. 发明授权

US5512818A Voltage proportional replication device using magnetoresistive sensing elements 失效
标题翻译：使用磁阻感测元件的电压比例复制器件
公开(公告)号：US5512818A
公开(公告)日：1996-04-30
申请号：US220768
申请日：1994-03-31
申请人： Sungho Jin , Ashraf W. Lotfi , Mark T. McCormack
发明人： Sungho Jin , Ashraf W. Lotfi , Mark T. McCormack
IPC分类号： G01R33/09 , G01R15/20 , G01R17/16 , G01R19/00 , G05F1/10 , H01F10/18 , G01V3/06
CPC分类号： G01R15/205
摘要： In accordance with the present invention, a voltage proportional replication device comprises an input electromagnet responsive to an input voltage for producing a magnetic field in proportion to the input voltage; and a first magnetoresistive sensing element disposed within the field of the input electromagnet. The device further includes an adjustable source of output voltage; an output electromagnet responsive to the output voltage for producing a magnetic field in proportion to the output voltage; and a second magnetoresistive sensing element disposed within the field of the output electromagnet. A control circuit for controlling the adjustable output voltage maintains a constant ratio between the resistances of the first and second magnetoresistive elements, thereby maintaining a constant ratio between the input voltage and the output voltage.
摘要翻译：根据本发明，电压比例复制装置包括响应于输入电压的输入电磁体，用于产生与输入电压成比例的磁场; 以及设置在输入电磁体的场内的第一磁阻感测元件。该装置还包括可调节的输出电压源; 响应于输出电压的输出电磁体，用于产生与输出电压成比例的磁场; 以及设置在输出电磁体的场内的第二磁阻感测元件。用于控制可调输出电压的控制电路在第一和第二磁阻元件的电阻之间保持恒定的比例，从而保持输入电压和输出电压之间的恒定比率。

2. 发明授权

US09246390B2 Power converter with controller operable in selected modes of operation 有权
公开(公告)号：US09246390B2
公开(公告)日：2016-01-26
申请号：US12939498
申请日：2010-11-04
申请人： Douglas Dean Lopata , Ashraf W. Lotfi
发明人： Douglas Dean Lopata , Ashraf W. Lotfi
IPC分类号： G05F1/00 , H02M3/158 , H02M3/156 , H02M1/00
CPC分类号： H02M3/1588 , H02M3/156 , H02M2001/0032 , Y02B70/1466 , Y02B70/16
摘要： A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.

3. 发明授权

US08867295B2 Power converter for a memory module 有权
标题翻译：用于内存模块的电源转换器
公开(公告)号：US08867295B2
公开(公告)日：2014-10-21
申请号：US13088763
申请日：2011-04-18
申请人： Narciso Mera , Douglas Dean Lopata , Ashraf W. Lotfi
发明人： Narciso Mera , Douglas Dean Lopata , Ashraf W. Lotfi
IPC分类号： G11C5/14
CPC分类号： G11C11/4074 , G11C5/147
摘要： An apparatus including a memory module and power converter and method of operating the same. In one embodiment, the apparatus includes a memory module, located on a circuit board, configured to operate from a first voltage and a second voltage being a multiple of the first voltage. The apparatus also includes a power converter employing a switched-capacitor power train, located on the circuit board, configured to provide the second voltage for the memory module from the first voltage.
摘要翻译：一种包括存储器模块和功率转换器的装置及其操作方法。在一个实施例中，该装置包括位于电路板上的存储器模块，其被配置为从第一电压和第二电压的第一电压的倍数进行操作。该装置还包括一个功率转换器，其采用位于电路板上的开关电容器传动系，其被配置为从第一电压提供存储器模块的第二电压。

4. 发明授权

US08339802B2 Module having a stacked magnetic device and semiconductor device and method of forming the same 有权
公开(公告)号：US08339802B2
公开(公告)日：2012-12-25
申请号：US12393818
申请日：2009-02-26
申请人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
发明人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
IPC分类号： H05K7/00
CPC分类号： H05K1/165 , H01F27/2804 , H01L23/495 , H01L23/645 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/05599 , H01L2224/0603 , H01L2224/2919 , H01L2224/32057 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/85399 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/00015 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19103 , H01L2924/30107 , H05K1/181 , H05K3/284 , H05K2201/086 , H05K2201/10515 , H05K2203/049 , H01L2924/0665 , H01L2924/00 , H01L2924/00012 , H01L2224/8381
摘要： A module having a stacked magnetic device and semiconductor device, and method of forming the same. In one embodiment, the module includes a printed wiring board including a patterned conductor formed on an upper surface thereof. The module also includes a magnetic core mounted on the upper surface of the printed wiring board proximate the patterned conductor and a semiconductor device mounted on an upper surface of the magnetic core.

5. 发明授权

US08253196B2 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same 有权
公开(公告)号：US08253196B2
公开(公告)日：2012-08-28
申请号：US12550027
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L21/00
CPC分类号： H01L29/7816 , H01L21/28518 , H01L21/761 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

6. 发明授权

US08212315B2 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same 有权
公开(公告)号：US08212315B2
公开(公告)日：2012-07-03
申请号：US12549892
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L21/00
CPC分类号： H01L21/761 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

7. 发明申请

US20110049621A1 Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same 有权
标题翻译：具有横向扩散的金属氧化物半导体器件的集成电路及其形成方法
公开(公告)号：US20110049621A1
公开(公告)日：2011-03-03
申请号：US12549836
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L29/78
CPC分类号： H01L27/0922 , H01L21/823807 , H01L21/823814 , H01L27/22 , H01L28/10 , H01L28/40 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/665 , H01L29/66659 , H01L29/66689 , H01L29/7816 , H01L29/7833 , H01L29/7835 , H01L43/08
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.
摘要翻译：具有晶体管的集成电路有利地体现在横向扩散的金属氧化物半导体器件中，其具有位于凹入半导体衬底的沟道区域上方的栅极及其形成方法。在一个实施例中，晶体管包括源极/漏极，源极/漏极包括与沟道区相邻的轻掺杂或重掺杂区，以及在沟道区下方延伸的相对掺杂阱以及源极/漏极的轻或重掺杂区的一部分。晶体管还包括在沟道区域下面的相对掺杂的阱内的沟道延伸，并且在源极/漏极的轻掺杂或重掺杂区域的一部分之下延伸。

8. 发明授权

US07759184B2 Laterally diffused metal oxide semiconductor device and method of forming the same 有权
标题翻译：横向扩散的金属氧化物半导体器件及其形成方法
公开(公告)号：US07759184B2
公开(公告)日：2010-07-20
申请号：US11805233
申请日：2007-05-22
申请人： Ashraf W. Lotfi , Jian Tan
发明人： Ashraf W. Lotfi , Jian Tan
IPC分类号： H01L21/00
CPC分类号： H01L29/7816 , H01L21/761 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L27/0629 , H01L29/0847 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66659 , H01L29/66689 , H01L29/78 , H01L29/7833
摘要： A transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the laterally diffused metal oxide semiconductor device includes a source/drain having a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The laterally diffused metal oxide semiconductor device further includes an oppositely doped well located under and within the channel region, and a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.
摘要翻译：有利地体现在横向扩散的金属氧化物半导体器件中的晶体管，其具有位于凹入半导体衬底的沟道区域上方的栅极及其形成方法。在一个实施例中，横向扩散的金属氧化物半导体器件包括具有位于沟道区附近的轻掺杂区的源极/漏极和位于轻掺杂区附近的重掺杂区。横向扩散的金属氧化物半导体器件还包括位于沟道区之下和沟槽区内的相对掺杂的阱，以及位于重掺杂区和相对掺杂阱之间的掺杂区，其掺杂浓度分布小于掺杂浓度分布重掺杂区域。

9. 发明申请

US20100052050A1 Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same 有权
公开(公告)号：US20100052050A1
公开(公告)日：2010-03-04
申请号：US12549944
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L27/06
CPC分类号： H01L21/823814 , H01L21/28518 , H01L21/761 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

10. 发明申请

US20090068400A1 Micromagnetic Device and Method of Forming the Same 有权
标题翻译：微电磁装置及其形成方法
公开(公告)号：US20090068400A1
公开(公告)日：2009-03-12
申请号：US11852688
申请日：2007-09-10
申请人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas , Amrit Panda
发明人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas , Amrit Panda
IPC分类号： B32B3/10
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0006 , H01F27/24 , H01F27/245 , H01F27/29 , H01F41/046 , H01F2017/0066 , H01F2027/2809 , Y10T428/24331
摘要： A micromagnetic device includes a first insulating layer formed above a substrate, a first seed layer formed above the first insulating layer, a first conductive winding layer selectively formed above the first seed layer, and a second insulating layer formed above the first conductive winding layer. The micromagnetic device also includes a first magnetic core layer formed above the second insulating layer, a third insulating layer formed above the first magnetic core layer, and a second magnetic core layer formed above the third insulating layer. The micromagnetic device still further includes a fourth insulating layer formed above the second magnetic core layer, a second seed layer formed above the fourth insulating layer, and a second conductive winding layer formed above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device.
摘要翻译：微电磁器件包括形成在衬底上的第一绝缘层，形成在第一绝缘层之上的第一晶种层，选择性地形成在第一晶种层上方的第一导电绕组层以及形成在第一导电绕组层之上的第二绝缘层。微磁体装置还包括形成在第二绝缘层上的第一磁芯层，形成在第一磁芯层上方的第三绝缘层和形成在第三绝缘层上的第二磁芯层。微磁体还包括形成在第二磁芯层上方的第四绝缘层，形成在第四绝缘层之上的第二晶种层，以及形成在第二晶种层上方的第二导电绕组层和通向第一导电绕组层。第一和第二导电绕组层形成用于微磁装置的绕组。

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