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    • 8. 发明授权
    • Dual gate cascade amplifier
    • 双门级联放大器
    • US07199669B2
    • 2007-04-03
    • US10956082
    • 2004-10-04
    • Sung-jae JungHoon-tae KimYun-seong EoKwang-du LeeSang-yoon Jeon
    • Sung-jae JungHoon-tae KimYun-seong EoKwang-du LeeSang-yoon Jeon
    • H03F3/04
    • H03F1/223H01L27/0207H01L27/0705
    • A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.
    • 双栅级联放大器包括串联电连接的第一晶体管和第二晶体管,第二晶体管包括第一并联晶体管和第二并联晶体管,第一并联晶体管和第二并联晶体管并联电连接,第一沟道 电连接第一晶体管的第一端部沟道区域和第二端部沟道区域,其中第一或第二端部沟道区域之一是源极,并且第一或第二端部沟道区域中的另一个是漏极,第二端部通道 区域是由第一和第二并联晶体管共享的公共末端通道区域,以及电连接到第二端部通道区域并远离第一晶体管延伸的第二通道。
    • 9. 发明申请
    • Dual gate cascade amplifier
    • 双门级联放大器
    • US20050073366A1
    • 2005-04-07
    • US10956082
    • 2004-10-04
    • Sung-jae JungHoon-tae KimYun-seong EoKwang-du LeeSang-yoon Jeon
    • Sung-jae JungHoon-tae KimYun-seong EoKwang-du LeeSang-yoon Jeon
    • H01L27/02H01L27/07H03F1/22
    • H03F1/223H01L27/0207H01L27/0705
    • A dual gate cascade amplifier includes a first transistor and a second transistor electrically connected in series, the second transistor including a first parallel transistor and a second parallel transistor, the first parallel transistor and the second parallel transistor being electrically connected in parallel, a first channel electrically connecting a first end channel region of the first transistor and a second end channel region, wherein one of the first or second end channel regions is a source and the other of the first or second end channel regions is a drain, the second end channel region being a common end channel region shared by the first and second parallel transistors, and a second channel electrically connected to the second end channel region and extending away from the first transistor.
    • 双栅级联放大器包括串联电连接的第一晶体管和第二晶体管,第二晶体管包括第一并联晶体管和第二并联晶体管,第一并联晶体管和第二并联晶体管并联电连接,第一沟道 电连接第一晶体管的第一端部沟道区域和第二端部沟道区域,其中第一或第二端部沟道区域之一是源极,并且第一或第二端部沟道区域中的另一个是漏极,第二端部通道 区域是由第一和第二并联晶体管共享的公共末端通道区域,以及电连接到第二端部通道区域并远离第一晶体管延伸的第二通道。
    • 10. 发明申请
    • Variable Inductance Applying Device Using Variable Capacitor and Variable Frequency Generating Device Thereof
    • 可变电感应用可变电容器和变频发生器件的设备
    • US20090096557A1
    • 2009-04-16
    • US12333540
    • 2008-12-12
    • Yun-seong EoKwang-du LeeHeung-bae Lee
    • Yun-seong EoKwang-du LeeHeung-bae Lee
    • H03J3/22
    • H03B5/08H03J3/20
    • Disclosed is a variable inductance applying device using a variable capacitor, and a variable frequency generating device thereof. The variable inductance applying device includes: a first inductor whose both terminals are connected to an inductance applying terminal applying inductance to an external circuit; a second inductor inductively coupled to the first inductor; and a variable capacitor connected to both terminals of the second inductor, which varies inductance from the inductance applying terminal by changing capacitance. Therefore, the inductance to be applied to the external circuit can be varied by changing the capacitance of the variable capacitor. Since the variable capacitor rarely contains a resistance component, energy loss due to the resistance component hardly occurs. As a result, the variable inductance applying device has a high value of Q.
    • 公开了一种使用可变电容器的可变电感施加装置及其可变频率发生装置。 可变电感施加装置包括:第一电感器,其两个端子连接到电感施加端子,将电感施加到外部电路; 电感耦合到第一电感器的第二电感器; 以及连接到第二电感器的两个端子的可变电容器,其通过改变电容来改变来自电感施加端子的电感。 因此,可以通过改变可变电容器的电容来改变施加到外部电路的电感。 由于可变电容器很少包含电阻分量,所以几乎不发生由电阻分量引起的能量损失。 结果,可变电感施加装置具有高的Q值。