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    • 1. 发明授权
    • Method of manufacturing a non-volatile memory device having a vertical structure
    • 制造具有垂直结构的非易失性存储器件的方法
    • US08927366B2
    • 2015-01-06
    • US13610344
    • 2012-09-11
    • Sung-hae LeeKi-hyun HwangJin-gyun Kim
    • Sung-hae LeeKi-hyun HwangJin-gyun Kim
    • H01L21/04H01L27/115
    • H01L27/11556H01L27/11582
    • A method of manufacturing a non-volatile memory device, wherein the method includes: alternately stacking interlayer sacrificial layers and interlayer insulating layers on a substrate; forming a plurality of first openings that pass through the interlayer sacrificial layers and the interlayer insulating layers to expose a first portion of the substrate; forming a semiconductor region on a side wall and a lower surface of each of the first openings; forming an embedded insulating layer in each of the first openings; forming a first conductive layer on the embedded insulating layer inside each of the first openings; forming a second opening exposing a second portion of the substrate and forming an impurity region on the second portion; forming a metal layer to cover the first conductive layer and the impurity region; and forming the metal layer into a metal silicide layer.
    • 一种制造非易失性存储器件的方法,其中所述方法包括:在衬底上交替层叠层间牺牲层和层间绝缘层; 形成穿过所述层间牺牲层和所述层间绝缘层的多个第一开口,以露出所述衬底的第一部分; 在每个所述第一开口的侧壁和下表面上形成半导体区域; 在每个所述第一开口中形成嵌入绝缘层; 在每个所述第一开口内的所述嵌入式绝缘层上形成第一导电层; 形成露出所述衬底的第二部分并在所述第二部分上形成杂质区的第二开口; 形成覆盖所述第一导电层和所述杂质区域的金属层; 以及将所述金属层形成为金属硅化物层。
    • 2. 发明申请
    • METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE HAVING A VERTICAL STRUCTURE
    • 制造具有垂直结构的非易失性存储器件的方法
    • US20130089974A1
    • 2013-04-11
    • US13610344
    • 2012-09-11
    • Sung-hae LeeKi-hyun HwangJin-gyun Kim
    • Sung-hae LeeKi-hyun HwangJin-gyun Kim
    • H01L21/04
    • H01L27/11556H01L27/11582
    • A method of manufacturing a non-volatile memory device, wherein the method includes: alternately stacking interlayer sacrificial layers and interlayer insulating layers on a substrate; forming a plurality of first openings that pass through the interlayer sacrificial layers and the interlayer insulating layers to expose a first portion of the substrate; forming a semiconductor region on a side wall and a lower surface of each of the first openings; forming an embedded insulating layer in each of the first openings; forming a first conductive layer on the embedded insulating layer inside each of the first openings; forming a second opening exposing a second portion of the substrate and forming an impurity region on the second portion; forming a metal layer to cover the first conductive layer and the impurity region; and forming the metal layer into a metal silicide layer.
    • 一种制造非易失性存储器件的方法,其中所述方法包括:在衬底上交替层叠层间牺牲层和层间绝缘层; 形成穿过所述层间牺牲层和所述层间绝缘层的多个第一开口,以露出所述衬底的第一部分; 在每个所述第一开口的侧壁和下表面上形成半导体区域; 在每个所述第一开口中形成嵌入绝缘层; 在每个所述第一开口内的所述嵌入式绝缘层上形成第一导电层; 形成露出所述衬底的第二部分并在所述第二部分上形成杂质区的第二开口; 形成覆盖所述第一导电层和所述杂质区域的金属层; 以及将所述金属层形成为金属硅化物层。