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1. 发明申请

US20090114927A1 Multi-chips with an optical interconnection unit 有权
标题翻译：具有光互连单元的多芯片
公开(公告)号：US20090114927A1
公开(公告)日：2009-05-07
申请号：US12081277
申请日：2008-04-14
申请人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
发明人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
IPC分类号： H01L31/173
CPC分类号： G02B6/43 , H01L2224/05554 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device
摘要翻译：提供具有光互连单元的多芯片。具有光学互连单元的多芯片包括顺序层叠的多个硅芯片，多个硅芯片中的每一个的一侧的多个光学器件阵列，使得光学器件阵列彼此对应，并且布线电连接连接硅芯片和安装在硅芯片一侧的光学器件阵列，其中相应的光学器件阵列通过在不同层中的相应的光学器件阵列之间发送和接收光学信号来形成光学连接单元。每个光学器件阵列包括发光器件和光接收器件中的至少一个

2. 发明申请

US20110038221A1 SEMICONDUCTOR MEMORY DEVICES, CONTROLLERS, AND SEMICONDUCTOR MEMORY SYSTEMS 有权
标题翻译：半导体存储器件，控制器和半导体存储器系统
公开(公告)号：US20110038221A1
公开(公告)日：2011-02-17
申请号：US12855409
申请日：2010-08-12
申请人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , In-sung Joe
发明人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , In-sung Joe
IPC分类号： G11C13/04
CPC分类号： G06F13/4243 , G02B6/43
摘要： A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.
摘要翻译：半导体存储器系统包括光学互连的控制器和存储器件。所述控制器包括：控制逻辑，被配置为产生用于控制所述存储器件的控制信号;以及发射器，被配置为将所述控制信号转换为光信号，并输出所述光信号。存储装置包括：接收单元滤波器，被配置为基于与光信号或电信号的周期相对应的电源电压将光信号转换为电信号。

3. 发明授权

US08120044B2 Multi-chips with an optical interconnection unit 有权
标题翻译：具有光互连单元的多芯片
公开(公告)号：US08120044B2
公开(公告)日：2012-02-21
申请号：US12081277
申请日：2008-04-14
申请人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
发明人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00
CPC分类号： G02B6/43 , H01L2224/05554 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.
摘要翻译：提供具有光互连单元的多芯片。具有光学互连单元的多芯片包括顺序层叠的多个硅芯片，多个硅芯片中的每一个的一侧的多个光学器件阵列，使得光学器件阵列彼此对应，并且布线电连接连接硅芯片和安装在硅芯片一侧的光学器件阵列，其中相应的光学器件阵列通过在不同层中的相应的光学器件阵列之间发送和接收光学信号来形成光学连接单元。每个光学器件阵列包括发光器件和光接收器件中的至少一个。

4. 发明申请

US20090136235A1 Probe card with optical transmitting unit and memory tester having the same 审中-公开
标题翻译：具有光发射单元和存储器测试仪的探头卡具有相同的功能
公开(公告)号：US20090136235A1
公开(公告)日：2009-05-28
申请号：US12149721
申请日：2008-05-07
申请人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , Bok-ki Min , Han-youl Ryu
发明人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , Bok-ki Min , Han-youl Ryu
IPC分类号： H04B10/00 , G01R31/28
CPC分类号： G11C29/56 , G01R31/2889 , G01R31/31905 , G11C2029/5602
摘要： Example embodiments provide a probe card having an optical transmitting unit and a memory tester having the probe card. The probe card may include a plurality of needles connected to test terminals formed in a memory, a plurality of first terminals connected to the needles, a plurality of second terminals connected to the outside and corresponding to the first terminals, and an optical transmitting unit. The optical transmitting unit may connect the first terminals and the second terminals.
摘要翻译：示例性实施例提供了具有光发送单元和具有探针卡的存储器测试器的探针卡。探针卡可以包括连接到形成在存储器中的测试端子的多个针，连接到针的多个第一端子，连接到外部并对应于第一端子的多个第二端子和光学传输单元。光发送单元可以连接第一端子和第二端子。

5. 发明授权

US08379470B2 Semiconductor memory devices, controllers, and semiconductor memory systems 有权
标题翻译：半导体存储器件，控制器和半导体存储器系统
公开(公告)号：US08379470B2
公开(公告)日：2013-02-19
申请号：US12855409
申请日：2010-08-12
申请人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , In-sung Joe
发明人： Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim , Soo-haeng Cho , In-sung Joe
IPC分类号： G11C13/04
CPC分类号： G06F13/4243 , G02B6/43
摘要： A semiconductor memory system includes a controller and a memory device that are optical-interconnected. The controller includes a control logic configured to generate a control signal for controlling the memory device and a transmitter configured to convert the control signal into an optical signal, and output the optical signal. The memory device includes a receiving unit filter configured to convert the optical signal into an electric signal, and the electric signal based on a supply voltage corresponding to a period of the optical signal or the electric signal.
摘要翻译：半导体存储器系统包括光学互连的控制器和存储器件。所述控制器包括：控制逻辑，被配置为产生用于控制所述存储器件的控制信号;以及发射器，被配置为将所述控制信号转换为光信号，并输出所述光信号。存储装置包括：接收单元滤波器，被配置为基于与光信号或电信号的周期相对应的电源电压将光信号转换为电信号。

6. 发明申请

US20100195420A1 SEMICONDUCTOR MEMORY DEVICE AND SYSTEM 审中-公开
标题翻译：半导体存储器件和系统
公开(公告)号：US20100195420A1
公开(公告)日：2010-08-05
申请号：US12689040
申请日：2010-01-18
申请人： Sung-dong SUH , Seong-gu Kim , Kyoung-ho Ha , Soo-haeng Cho
发明人： Sung-dong SUH , Seong-gu Kim , Kyoung-ho Ha , Soo-haeng Cho
IPC分类号： G11C7/00
CPC分类号： G11C8/18 , G11C29/023
摘要： A semiconductor memory system includes a memory controller and a memory. The memory controller includes a control signal converting unit converting a control signal into a converted control signal including n sequential clock pulses and a target clock pulse activated after a time period has elapsed from a start point of the n sequential clock pulses, and output the converted clock signal, and a controller transmitting unit converting the converted control signal into an optical signal, and transmitting the optical signal to the memory. The memory includes a memory receiving unit converting the optical signal into an electrical signal, and a control signal re-converting unit detecting the time period from the electrical signal, and converting the control signal into a control signal corresponding to the time period.
摘要翻译：半导体存储器系统包括存储器控制器和存储器。存储器控制器包括控制信号转换单元，其将控制信号转换为包括n个连续时钟脉冲的转换控制信号和在从n个连续时钟脉冲的起始点经过时间段之后激活的目标时钟脉冲，并且输出转换的时钟信号，以及将转换的控制信号转换为光信号的控制器发送单元，并将光信号发送到存储器。存储器包括将光信号转换成电信号的存储器接收单元和从电信号检测时间段的控制信号重新转换单元，并将控制信号转换成对应于该时间段的控制信号。

7. 发明申请

US20080175294A1 Semiconductor optical devices, systems and methods of manufacturing the same 有权
标题翻译：半导体光学器件，系统及其制造方法
公开(公告)号：US20080175294A1
公开(公告)日：2008-07-24
申请号：US11980424
申请日：2007-10-31
申请人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
发明人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
IPC分类号： H01S5/026 , H01L33/00 , H04J14/02
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/021 , H01S5/0218 , H01S5/0265 , H01S5/0425 , H01S5/12 , H01S5/124 , H01S5/2004 , H01S5/3434 , H01S5/4087
摘要： A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.
摘要翻译：半导体光学器件包括硅衬底和III-V族III族半导体增益层。在硅衬底上形成III-V族半导体增益层。硅衬底或III-V族半导体增益层在其中形成色散的布拉格光栅。在制造半导体光学器件的方法中，在硅衬底上形成III-V族半导体增益层。在硅衬底或III-V族半导体增益层上形成分散布拉格光栅。

8. 发明授权

US07715458B2 Semiconductor optical devices, systems and methods of manufacturing the same 有权
标题翻译：半导体光学器件，系统及其制造方法
公开(公告)号：US07715458B2
公开(公告)日：2010-05-11
申请号：US11980424
申请日：2007-10-31
申请人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
发明人： Jun-youn Kim , Kyoung-ho Ha , Soo-haeng Cho
IPC分类号： H01S5/20 , H01L31/00 , H01L21/00
CPC分类号： H01S5/2232 , B82Y20/00 , H01S5/021 , H01S5/0218 , H01S5/0265 , H01S5/0425 , H01S5/12 , H01S5/124 , H01S5/2004 , H01S5/3434 , H01S5/4087
摘要： A semiconductor optical device includes a silicon substrate and a Group III-V semiconductor gain layer. The Group III-V semiconductor gain layer is formed on the silicon substrate. The silicon substrate or the Group III-V semiconductor gain layer has a dispersion Bragg grating formed therein. In a method of manufacturing a semiconductor optical device, a Group III-V semiconductor gain layer is formed on a silicon substrate. A dispersion Bragg grating is formed on the silicon substrate or the Group III-V semiconductor gain layer.
摘要翻译：半导体光学器件包括硅衬底和III-V族III族半导体增益层。在硅衬底上形成III-V族半导体增益层。硅衬底或III-V族半导体增益层在其中形成色散的布拉格光栅。在制造半导体光学器件的方法中，在硅衬底上形成III-V族半导体增益层。在硅衬底或III-V族半导体增益层上形成分散布拉格光栅。

9. 发明授权

US07480321B2 Vertical external cavity surface emitting laser (VECSEL) having modulating mirror and display apparatus employing the same 有权
标题翻译：具有调制反射镜的垂直外腔表面发射激光器（VECSEL）和采用该反射镜的显示装置
公开(公告)号：US07480321B2
公开(公告)日：2009-01-20
申请号：US11513208
申请日：2006-08-31
申请人： Soo-haeng Cho
发明人： Soo-haeng Cho
IPC分类号： H01S3/081
CPC分类号： H01S5/141 , H01S3/105 , H01S3/109 , H01S5/024 , H01S5/041 , H01S5/183 , H04N9/3132
摘要： A vertical external cavity surface emitting laser (VECSEL) having an improved mirror that forms an external cavity to modulate an emitted laser beam and display apparatus employing the same are provided. The VECSEL includes: a pumping light source; a laser chip that is excited by a pump beam emitted by the pumping light source to emit a laser beam of a predetermined wavelength; a folding mirror that is separated from the laser chip and is obliquely disposed relative to an axis of incident light emitted by the laser chip and converts the propagation path of an incident laser beam; a movable mirror unit facing the folding mirror and rotates so as to selectively reflect a laser beam reflected from the folding mirror to the folding mirror. The display apparatus includes: the VECSEL having the above-mentioned structure; a light scanning unit scanning light emitted by the VECSEL to create a planar image onto the screen; and a projection optical system that is disposed between the VECSEL and the screen and enlarges and projects a laser beam onto the screen.
摘要翻译：提供一种具有改进的反射镜的垂直外腔表面发射激光器（VECSEL），其形成用于调制发射的激光束的外部空腔和使用其的显示装置。 VECSEL包括：泵浦光源; 由泵浦光源发射的泵浦光束激发以发射预定波长的激光束的激光芯片; 与激光芯片分离并且相对于由激光芯片发射的入射光轴倾斜地设置并折射入射激光束的传播路径的折叠镜; 面向折叠反射镜并旋转的可移动镜单元，以便将从折叠镜反射的激光束选择性地反射到折叠镜。显示装置包括：具有上述结构的VECSEL; 光扫描单元扫描由VECSEL发射的光以在屏幕上产生平面图像; 以及投影光学系统，其设置在VECSEL和屏幕之间，并将激光束放大并投影到屏幕上。

10. 发明授权

US07548569B2 High-power optically end-pumped external-cavity semiconductor laser 有权
标题翻译：大功率光端泵浦外腔半导体激光器
公开(公告)号：US07548569B2
公开(公告)日：2009-06-16
申请号：US11525093
申请日：2006-09-22
申请人： Gi-bum Kim , Soo-haeng Cho , Taek Kim
发明人： Gi-bum Kim , Soo-haeng Cho , Taek Kim
IPC分类号： H01S3/04 , H01S3/08 , H01S3/00
CPC分类号： H01S5/14 , H01S3/109 , H01S5/02288 , H01S5/024 , H01S5/041 , H01S5/141 , H01S5/183
摘要： A high-power optically end-pumped external-cavity semiconductor laser is provided having a laser chip including an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength; an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR; a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip; and a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser chip to focus a pumping beam to be incident on the second surface of the laser chip.
摘要翻译：提供了一种具有激光芯片的高功率光端泵浦外腔半导体激光器，激光芯片包括有源层和用于发射基波长的光的分布布拉格反射器（DBR）; 与激光芯片的第一表面间隔开的外部反射镜并与DBR形成空腔谐振器; 定位在外镜和激光芯片之间的二次谐波产生（SHG）晶体; 以及微透镜集成散热器，散发由激光芯片产生的热并结合到激光芯片的第二表面，以聚焦待入射在激光芯片的第二表面上的泵浦光束。

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