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    • 5. 发明授权
    • Perpendicular magnetic recording head
    • 垂直磁记录头
    • US07672081B2
    • 2010-03-02
    • US11503296
    • 2006-08-14
    • Chee-kheng LimEun-sik KimYong-su Kim
    • Chee-kheng LimEun-sik KimYong-su Kim
    • G11B5/127
    • G11B5/012G11B5/1278G11B5/3116G11B5/3146G11B2005/0029
    • A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.
    • 垂直磁记录头,其在垂直磁记录介质的记录层的轨道方向上移动以在记录层上写入信息或从记录层读取信息。 垂直磁记录头包括:包括软磁性底层和记录层的垂直磁记录介质; 写头,其包括向记录层施加磁场并向其写入信息的主极;以及返回极,其具有连接到主极的第一端,并且具有与主极间隔开的第二端 在与记录层相邻的垂直磁记录头的空气轴承表面(ABS)上; 以及形成在所述写入头的至少一侧上的永磁体。
    • 10. 发明申请
    • Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same
    • 使用自旋极化电流的多位磁存储器件及其制造和操作方法
    • US20070206405A1
    • 2007-09-06
    • US11347228
    • 2006-02-06
    • Chee-kheng LimYong-su Kim
    • Chee-kheng LimYong-su Kim
    • G11C11/00
    • H01L43/08B82Y10/00G11C11/16G11C11/5607H01L27/228
    • A multi-bit magnetic memory device using a spin-polarized current and methods of manufacturing and operating the same. The magnetic memory device includes a switching device and a magnetic storage node connected to the switching device, wherein the magnetic storage node includes a first magnetic layer, a second magnetic layer and a free magnetic layer which are vertically and separately disposed from one another. The first and second magnetic layer have transmission characteristics opposite to each other for spin-polarized electrons, and have magnetic polarizations that are opposite to each other. The free magnetic layer may include first and second free magnetic layers, which are separately disposed from each other. The magnetic storage node may further include third and fourth magnetic layers that are separately disposed between the first and second free magnetic layers.
    • 使用自旋极化电流的多位磁存储器件及其制造和操作方法。 磁存储器件包括连接到开关器件的开关器件和磁存储节点,其中磁存储节点包括彼此垂直且分开设置的第一磁性层,第二磁性层和自由磁性层。 第一和第二磁性层对于自旋极化电子具有彼此相反的传输特性,并且具有彼此相反的磁极化。 自由磁性层可以包括彼此分开设置的第一和第二自由磁性层。 磁存储节点还可以包括分开设置在第一和第二自由磁性层之间的第三和第四磁性层。