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1. 发明授权

US06740169B2 Method of reworking a conditioning disk 有权
标题翻译：修理调节盘的方法
公开(公告)号：US06740169B2
公开(公告)日：2004-05-25
申请号：US10453583
申请日：2003-06-04
申请人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
发明人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
IPC分类号： C23G102
CPC分类号： B24B53/017 , B24B53/12 , B24D3/06 , B24D7/06 , B24D18/0072 , Y10S438/959
摘要： A conditioning disk and a conditioner for a chemical mechanical polishing (CMP) pad, and a method of fabricating, reworking, and cleaning the conditioning disk, are utilized to improve conditioning efficiency, and to reduce production expenses. The conditioning disk for a CMP pad is divided into regions defined by a size difference of abrasive grains formed on the body surface in each region of the conditioning disk. The method of fabricating the conditioning disk is performed by forming adhesive films for attaching the abrasive grains onto the body surface multiple times. In addition, a used conditioning disk may be reworked by detaching the abrasive grains from the body, and attaching new abrasive grains. A used conditioning disk can also be cleaned of by-products of the conditioning process by a cleaning method using a HF solution or BOE (buffered oxide etch) solution.
摘要翻译：用于化学机械抛光（CMP）垫的调理盘和调节剂以及制造，再加工和清洁调节盘的方法被用于改善调节效率并降低生产成本。用于CMP垫的调节盘被划分为由调节盘的每个区域中的体表面上形成的磨粒的尺寸差定义的区域。制造调节盘的方法是通过形成用于将磨粒附着到体表上多次的粘合剂膜来进行的。此外，可以通过将磨料颗粒从体内分离并附着新的磨料颗粒来改造使用过的调节盘。还可以使用HF溶液或BOE（缓冲氧化物蚀刻）溶液，通过清洗方法清洁所使用的调理盘。

2. 发明授权

US06213856B1 Conditioner and conditioning disk for a CMP pad, and method of fabricating, reworking, and cleaning conditioning disk 有权
标题翻译：用于CMP垫的调节器和调节盘，以及制造，再加工和清洁调节盘的方法
公开(公告)号：US06213856B1
公开(公告)日：2001-04-10
申请号：US09293946
申请日：1999-04-19
申请人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
发明人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
IPC分类号： B24B2118
CPC分类号： B24B53/017 , B24B53/12 , B24D3/06 , B24D7/06 , B24D18/0072 , Y10S438/959
摘要： A conditioning disk and a conditioner for a chemical mechanical polishing (CMP) pad, and a method of fabricating, reworking, and cleaning the conditioning disk, are utilized to improve conditioning efficiency, and to reduce production expenses. The conditioning disk for a CMP pad is divided into regions defined by a size difference of abrasive grains formed on the body surface in each region of the conditioning disk. The method of fabricating the conditioning disk is performed by forming adhesive films for attaching the abrasive grains onto the body surface multiple times. In addition, a used conditioning disk may be reworked by detaching the abrasive grains from the body, and attaching new abrasive grains. A used conditioning disk can also be cleaned of by-products of the conditioning process by a cleaning method using a HF solution or BOE (buffered oxide etch) solution.
摘要翻译：用于化学机械抛光（CMP）垫的调理盘和调节剂以及制造，再加工和清洁调节盘的方法被用于改善调节效率并降低生产成本。用于CMP垫的调节盘被划分为由调节盘的每个区域中的体表面上形成的磨粒的尺寸差定义的区域。制造调节盘的方法是通过形成用于将磨粒附着到体表上多次的粘合剂膜来进行的。此外，可以通过将磨料颗粒从体内分离并附着新的磨料颗粒来改造使用过的调节盘。还可以使用HF溶液或BOE（缓冲氧化物蚀刻）溶液，通过清洗方法清洁所使用的调理盘。

3. 发明授权

US06494927B2 Conditioner and conditioning disk for a CMP pad, and method of fabricating, reworking, and cleaning conditioning disk 失效
标题翻译：用于CMP垫的调节器和调节盘，以及制造，再加工和清洁调节盘的方法
公开(公告)号：US06494927B2
公开(公告)日：2002-12-17
申请号：US09776732
申请日：2001-02-06
申请人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
发明人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
IPC分类号： B24D1800
CPC分类号： B24B53/017 , B24B53/12 , B24D3/06 , B24D7/06 , B24D18/0072 , Y10S438/959
摘要： A conditioning disk and a conditioner for a chemical mechanical polishing (CMP) pad, and a method of fabricating, reworking, and cleaning the conditioning disk, are utilized to improve conditioning efficiency, and to reduce production expenses. The conditioning disk for a CMP pad is divided into regions defined by a size difference of abrasive grains formed on the body surface in each region of the conditioning disk. The method of fabricating the conditioning disk is performed by forming adhesive films for attaching the abrasive grains onto the body surface multiple times. In addition, a used conditioning disk may be reworked by detaching the abrasive grains from the body, and attaching new abrasive grains. A used conditioning disk can also be cleaned of by-products of the conditioning process by a cleaning method using a HF solution or BOE (buffered oxide etch) solution.
摘要翻译：用于化学机械抛光（CMP）垫的调理盘和调节剂以及制造，再加工和清洁调节盘的方法被用于改善调节效率并降低生产成本。用于CMP垫的调节盘被划分为由调节盘的每个区域中的体表面上形成的磨粒的尺寸差定义的区域。制造调节盘的方法是通过形成用于将磨粒附着到体表上多次的粘合剂膜来进行的。此外，可以通过将磨料颗粒从体内分离并附着新的磨料颗粒来改造使用过的调节盘。还可以使用HF溶液或BOE（缓冲氧化物蚀刻）溶液，通过清洗方法清洁所使用的调理盘。

4. 发明授权

US06596087B2 Method of cleaning conditioning disk 失效
公开(公告)号：US06596087B2
公开(公告)日：2003-07-22
申请号：US09776733
申请日：2001-02-06
申请人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
发明人： Sung-bum Cho , Baik-soon Choi , Jin-sung Kim , Kyue-sang Choi
IPC分类号： G23G102
CPC分类号： B24B53/017 , B24B53/12 , B24D3/06 , B24D7/06 , B24D18/0072 , Y10S438/959
摘要： A conditioning disk and a conditioner for a chemical mechanical polishing (CMP) pad, and a method of fabricating, reworking, and cleaning the conditioning disk, are utilized to improve conditioning efficiency, and to reduce production expenses. The conditioning disk for a CMP pad is divided into regions defined by a size difference of abrasive grains formed on the body surface in each region of the conditioning disk. The method of fabricating the conditioning disk is performed by forming adhesive films for attaching the abrasive grains onto the body surface multiple times. In addition, a used conditioning disk may be reworked by detaching the abrasive grains from the body, and attaching new abrasive grains. A used conditioning disk can also be cleaned of by-products of the conditioning process by a cleaning method using a HF solution or BOE (buffered oxide etch) solution.

5. 发明授权

US06179955B2 Dry etching apparatus for manufacturing semiconductor devices 有权
标题翻译：用于制造半导体器件的干法蚀刻装置
公开(公告)号：US06179955B2
公开(公告)日：2001-01-30
申请号：US09317138
申请日：1999-05-24
申请人： Eun-hee Shin , Sung-bum Cho , Baik-soon Choi , Young-koo Lee
发明人： Eun-hee Shin , Sung-bum Cho , Baik-soon Choi , Young-koo Lee
IPC分类号： H01L2100
CPC分类号： H01L21/67069 , H01J37/321 , H01J37/32477
摘要： A dielectric window of a dry etching apparatus for manufacturing semiconductor devices is shaped so that areas of high density plasma in the etching apparatus correspond to portions of the dielectric window further away from the wafer and areas of lower density plasma correspond to portions of the dielectric window closer to the wafer. For example, the dielectric window may be curve inwards at its center in a concave-shape.
摘要翻译：用于制造半导体器件的干式蚀刻装置的电介质窗形状使得蚀刻装置中的高密度等离子体的区域对应于更远离晶片的电介质窗口的部分，而较低密度等离子体的区域对应于电介质窗口的部分更靠近晶圆。例如，电介质窗口可以在其中心处向内弯曲成凹形。

6. 发明授权

US6146492A Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning method 有权
标题翻译：等离子体处理装置具有原位监测，监测方法和原位残留清洗方法
公开(公告)号：US6146492A
公开(公告)日：2000-11-14
申请号：US172140
申请日：1998-10-14
申请人： Sung-bum Cho , Hak-pil Kim , Eun-hee Shin , Baik-soon Choi
发明人： Sung-bum Cho , Hak-pil Kim , Eun-hee Shin , Baik-soon Choi
IPC分类号： H05H1/00 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , C23C16/00
CPC分类号： H01J37/32935 , H01J37/32963 , Y10S438/905
摘要： A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.
摘要翻译：一种具有等离子体室的等离子体处理装置，其具有原位监测，监测方法和用于原位清洗等离子体室的方法。该装置包括采样歧管，其引导来自等离子体室的样品气体流过歧管。气体分析仪分析流过采样歧管的样品气体。原位监测方法监测初始气体以建立背景水平，并且如有必要，烘烤设备以减少污染物。然后监测方法监测过程反应，并且在卸载晶片并排出废气之后，监测原位清洁反应。监测涉及通过采样歧管引导来自等离子体室的气体流，然后用气体分析仪分析歧管中的气体。清洗方法包括在蚀刻多晶硅层之后使用六氟化硫和氯的混合物来清洁等离子体室。

7. 发明授权

US06499492B1 Plasma process apparatus with in situ monitoring, monitoring method, and in situ residue cleaning 失效
标题翻译：等离子体处理装置，具有原位监测，监测方法和原位残留清洗
公开(公告)号：US06499492B1
公开(公告)日：2002-12-31
申请号：US09633893
申请日：2000-08-07
申请人： Sung-bum Cho , Hak-pil Kim , Eun-hee Shin , Baik-soon Choi
发明人： Sung-bum Cho , Hak-pil Kim , Eun-hee Shin , Baik-soon Choi
IPC分类号： B08B900
CPC分类号： H01J37/32935 , H01J37/32963 , Y10S438/905
摘要： A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.
摘要翻译：一种具有等离子体室的等离子体处理装置，其具有原位监测，监测方法和用于原位清洗等离子体室的方法。该装置包括采样歧管，其引导来自等离子体室的样品气体流过歧管。气体分析仪分析流过采样歧管的样品气体。原位监测方法监测初始气体以建立背景水平，并且如有必要，烘烤设备以减少污染物。然后监测方法监测过程反应，并且在卸载晶片并排出废气之后，监测原位清洁反应。监测涉及通过采样歧管引导来自等离子体室的气体流，然后用气体分析仪分析歧管中的气体。清洗方法包括在蚀刻多晶硅层之后使用六氟化硫和氯的混合物来清洁等离子体室。

8. 发明授权

US06335284B1 Metallization process for manufacturing semiconductor devices 有权
标题翻译：制造半导体器件的金属化工艺
公开(公告)号：US06335284B1
公开(公告)日：2002-01-01
申请号：US09386360
申请日：1999-08-31
申请人： Baik-soon Choi , Jae-saeng Lee , Eun-hee Shin , Sung-bum Cho
发明人： Baik-soon Choi , Jae-saeng Lee , Eun-hee Shin , Sung-bum Cho
IPC分类号： H01L21461
CPC分类号： H01L21/32136 , H01L21/76838
摘要： A metallization process for manufacturing semiconductor devices and a system that uses the same that minimizes corrosion failures in aluminum patterns. The process for the metal pattern formation is carried out by loading a semiconductor wafer into an etching chamber, the semiconductor wafer having a photoresist pattern formed over a metal material layer, stabilizing the environment in the etching chamber, main-etching the metal material layer to the etch-end point by using the photoresist pattern as an etch mask while supplying etching gas containing chlorine (Cl2) into the etching chamber, over-etching the metal material layer for a certain period of time over the etch-end point so as to form metal patterns, purging the etching chamber after the over-etching step, and unloading the wafer from the etching chamber. The pressure in the transfer module is optimized, and the load lock chamber is continuously purged.
摘要翻译：用于制造半导体器件的金属化工艺和使用该金属化工艺的系统，其最小化铝图案中的腐蚀失效。通过将半导体晶片装载到蚀刻室中，半导体晶片具有形成在金属材料层上的光致抗蚀剂图案，稳定蚀刻室中的环境，将金属材料层主蚀刻到通过使用光致抗蚀剂图案作为蚀刻掩模，同时将蚀刻气体（Cl2）提供到蚀刻室中，在蚀刻终点上过刻蚀金属材料层一段时间，从而蚀刻终点，以便形成金属图案，在过蚀刻步骤之后净化蚀刻室，并从蚀刻室卸载晶片。传递模块的压力得到优化，负载锁定室被持续清洗。

9. 发明授权

US06797109B2 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates 失效
标题翻译：用于制造半导体器件的处理室，能够减少微粒污染
公开(公告)号：US06797109B2
公开(公告)日：2004-09-28
申请号：US10235976
申请日：2002-09-06
申请人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
发明人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
IPC分类号： H05H100
CPC分类号： H01J37/32431 , C23C16/4583 , C23C16/4585 , C23C16/54 , H01J37/32623 , H01J37/32642 , H01L21/32136 , H01L21/6831 , H01L21/68735 , Y10T117/10
摘要： A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
摘要翻译：用于制造用于蚀刻半导体晶片上的材料层的半导体器件的处理室包括用于保持半导体晶片的静电卡盘和围绕静电卡盘上的半导体晶片侧的环形边缘环，以防止半导体晶片从其原始位置脱离。环形边缘环具有面向半导体晶片的侧面并与半导体晶片的侧面牢固接触的第一侧。

10. 发明授权

US06464794B1 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates 失效
标题翻译：用于制造半导体器件的处理室，能够减少微粒污染
公开(公告)号：US06464794B1
公开(公告)日：2002-10-15
申请号：US09404631
申请日：1999-09-23
申请人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
发明人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
IPC分类号： C23C1600
CPC分类号： H01J37/32431 , C23C16/4583 , C23C16/4585 , C23C16/54 , H01J37/32623 , H01J37/32642 , H01L21/32136 , H01L21/6831 , H01L21/68735 , Y10T117/10
摘要： A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
摘要翻译：用于制造用于蚀刻半导体晶片上的材料层的半导体器件的处理室包括用于保持半导体晶片的静电卡盘和围绕静电卡盘上的半导体晶片侧的环形边缘环，以防止半导体晶片从其原始位置脱离。环形边缘环具有面向半导体晶片的侧面并与半导体晶片的侧面牢固接触的第一侧。

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